JP2021069080A - ゲートドライブ回路 - Google Patents
ゲートドライブ回路 Download PDFInfo
- Publication number
- JP2021069080A JP2021069080A JP2019195130A JP2019195130A JP2021069080A JP 2021069080 A JP2021069080 A JP 2021069080A JP 2019195130 A JP2019195130 A JP 2019195130A JP 2019195130 A JP2019195130 A JP 2019195130A JP 2021069080 A JP2021069080 A JP 2021069080A
- Authority
- JP
- Japan
- Prior art keywords
- channel mosfet
- temperature
- turn
- gate
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
Description
前記NチャンネルMOSFETと前記PチャンネルMOSFETのゲート端子間に、周囲温度が高くなるに応じて前記NチャンネルMOSFETと前記PチャンネルMOSFETの各ゲート電圧を低くする温度補正回路を接続したものである。
Q1−NチャンネルMOSFET
Q2−PチャンネルMOSFET
Claims (3)
- NチャンネルMOSFETとPチャンネルMOSFETとをプッシュプル接続して、入力パルス信号を増幅して出力素子を駆動するゲートドライブ回路において、
前記NチャンネルMOSFETと前記PチャンネルMOSFETのゲート端子間に、周囲温度が高くなるに応じて前記NチャンネルMOSFETと前記PチャンネルMOSFETの各ゲート電圧を低くする温度補正回路を接続したゲートドライブ回路。 - 前記温度補正回路は、コレクタエミッタ間に前記NチャンネルMOSFETと前記PチャンネルMOSFETの各ゲート端子が接続されるトランジスタと、前記トランジスタのベースエミッタ間に接続されるサーミスタ素子を含むサーミスタ回路と、を含む、請求項1記載のゲートドライブ回路。
- 前記サーミスタ回路は、直列接続された抵抗R2、R3と、前記抵抗R3に並列接続されたサーミスタNTCとで構成される、請求項2記載のゲートドライブ回路。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019195130A JP2021069080A (ja) | 2019-10-28 | 2019-10-28 | ゲートドライブ回路 |
GB2014666.8A GB2590128B (en) | 2019-10-28 | 2020-09-17 | Gate drive circuit |
EP20196725.4A EP3817230A1 (en) | 2019-10-28 | 2020-09-17 | Gate drive circuit |
US17/060,150 US11901882B2 (en) | 2019-10-28 | 2020-10-01 | Gate drive circuit |
CN202011099804.3A CN112737551A (zh) | 2019-10-28 | 2020-10-14 | 栅极驱动电路 |
CN202410073207.5A CN117650773A (zh) | 2019-10-28 | 2020-10-14 | 栅极驱动电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019195130A JP2021069080A (ja) | 2019-10-28 | 2019-10-28 | ゲートドライブ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021069080A true JP2021069080A (ja) | 2021-04-30 |
JP2021069080A5 JP2021069080A5 (ja) | 2022-11-07 |
Family
ID=72560496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019195130A Pending JP2021069080A (ja) | 2019-10-28 | 2019-10-28 | ゲートドライブ回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11901882B2 (ja) |
EP (1) | EP3817230A1 (ja) |
JP (1) | JP2021069080A (ja) |
CN (2) | CN117650773A (ja) |
GB (1) | GB2590128B (ja) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4220877A (en) * | 1977-05-16 | 1980-09-02 | Rca Corporation | Temperature compensated switching circuit |
JPH0548584A (ja) | 1991-08-12 | 1993-02-26 | Mitsubishi Electric Corp | 光通信システム |
JPH0548584U (ja) | 1991-11-27 | 1993-06-25 | 株式会社明電舎 | 高速スイッチング素子のゲートドライブ回路 |
US5296765A (en) * | 1992-03-20 | 1994-03-22 | Siliconix Incorporated | Driver circuit for sinking current to two supply voltages |
EP1865398A1 (en) * | 2006-06-07 | 2007-12-12 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | A temperature-compensated current generator, for instance for 1-10V interfaces |
US7812647B2 (en) * | 2007-05-21 | 2010-10-12 | Advanced Analogic Technologies, Inc. | MOSFET gate drive with reduced power loss |
JP2009071956A (ja) * | 2007-09-12 | 2009-04-02 | Mitsubishi Electric Corp | ゲート駆動回路 |
CN103348574B (zh) * | 2010-12-03 | 2016-03-02 | 马维尔国际贸易有限公司 | 工艺和温度不敏感的反相器 |
KR20170122058A (ko) * | 2016-04-26 | 2017-11-03 | 엘에스산전 주식회사 | 온도 측정 신호 보정 장치 |
US11323032B2 (en) * | 2017-12-28 | 2022-05-03 | Shindengen Electric Manufacturing Co., Ltd. | Plural power modules conversion device with switch element control |
US11121704B2 (en) * | 2018-04-23 | 2021-09-14 | Texas Instruments Incorporated | Parallelling multiple power switches |
CN110034753A (zh) * | 2019-04-22 | 2019-07-19 | 西安拓尔微电子有限责任公司 | 一种P型VDMOS的high-side高速驱动电路及其驱动方法 |
-
2019
- 2019-10-28 JP JP2019195130A patent/JP2021069080A/ja active Pending
-
2020
- 2020-09-17 GB GB2014666.8A patent/GB2590128B/en active Active
- 2020-09-17 EP EP20196725.4A patent/EP3817230A1/en not_active Withdrawn
- 2020-10-01 US US17/060,150 patent/US11901882B2/en active Active
- 2020-10-14 CN CN202410073207.5A patent/CN117650773A/zh active Pending
- 2020-10-14 CN CN202011099804.3A patent/CN112737551A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2590128A (en) | 2021-06-23 |
EP3817230A1 (en) | 2021-05-05 |
CN112737551A (zh) | 2021-04-30 |
GB2590128B (en) | 2024-05-29 |
GB202014666D0 (en) | 2020-11-04 |
CN117650773A (zh) | 2024-03-05 |
US11901882B2 (en) | 2024-02-13 |
US20210126630A1 (en) | 2021-04-29 |
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