FR2968121B1 - Procede de transfert d'une couche a haute temperature - Google Patents

Procede de transfert d'une couche a haute temperature

Info

Publication number
FR2968121B1
FR2968121B1 FR1059903A FR1059903A FR2968121B1 FR 2968121 B1 FR2968121 B1 FR 2968121B1 FR 1059903 A FR1059903 A FR 1059903A FR 1059903 A FR1059903 A FR 1059903A FR 2968121 B1 FR2968121 B1 FR 2968121B1
Authority
FR
France
Prior art keywords
layer
donor substrate
concentration
substrate
transferring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1059903A
Other languages
English (en)
Other versions
FR2968121A1 (fr
Inventor
Nicolas Daix
Konstantin Bourdelle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1059903A priority Critical patent/FR2968121B1/fr
Priority to US13/990,539 priority patent/US9275892B2/en
Priority to PCT/EP2011/070756 priority patent/WO2012072459A1/fr
Publication of FR2968121A1 publication Critical patent/FR2968121A1/fr
Application granted granted Critical
Publication of FR2968121B1 publication Critical patent/FR2968121B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
FR1059903A 2010-11-30 2010-11-30 Procede de transfert d'une couche a haute temperature Active FR2968121B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1059903A FR2968121B1 (fr) 2010-11-30 2010-11-30 Procede de transfert d'une couche a haute temperature
US13/990,539 US9275892B2 (en) 2010-11-30 2011-11-23 Method of high temperature layer transfer
PCT/EP2011/070756 WO2012072459A1 (fr) 2010-11-30 2011-11-23 Procédé de transfert de couche à haute température

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1059903A FR2968121B1 (fr) 2010-11-30 2010-11-30 Procede de transfert d'une couche a haute temperature

Publications (2)

Publication Number Publication Date
FR2968121A1 FR2968121A1 (fr) 2012-06-01
FR2968121B1 true FR2968121B1 (fr) 2012-12-21

Family

ID=43533313

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1059903A Active FR2968121B1 (fr) 2010-11-30 2010-11-30 Procede de transfert d'une couche a haute temperature

Country Status (3)

Country Link
US (1) US9275892B2 (fr)
FR (1) FR2968121B1 (fr)
WO (1) WO2012072459A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3043248B1 (fr) * 2015-10-30 2017-12-15 Commissariat Energie Atomique Procede d'elimination de defauts dans un film semiconducteur comprenant la formation d'une couche de piegeage d'hydrogene
CN106783725B (zh) * 2016-12-27 2019-09-17 上海新傲科技股份有限公司 带有绝缘埋层的衬底的制备方法
CN107146758B (zh) 2016-12-27 2019-12-13 上海新傲科技股份有限公司 带有载流子俘获中心的衬底的制备方法
FR3076069B1 (fr) * 2017-12-22 2021-11-26 Commissariat Energie Atomique Procede de transfert d'une couche utile
FR3076070B1 (fr) * 2017-12-22 2019-12-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2874455B1 (fr) 2004-08-19 2008-02-08 Soitec Silicon On Insulator Traitement thermique avant collage de deux plaquettes
FR2839385B1 (fr) 2002-05-02 2004-07-23 Soitec Silicon On Insulator Procede de decollement de couches de materiau
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
JP2005085964A (ja) 2003-09-08 2005-03-31 Sumitomo Mitsubishi Silicon Corp 貼り合わせ基板の製造方法
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
EP1571241A1 (fr) 2004-03-01 2005-09-07 S.O.I.T.E.C. Silicon on Insulator Technologies Méthode de fabrication d'un substrat
FR2867310B1 (fr) 2004-03-05 2006-05-26 Soitec Silicon On Insulator Technique d'amelioration de la qualite d'une couche mince prelevee
US20060014363A1 (en) 2004-03-05 2006-01-19 Nicolas Daval Thermal treatment of a semiconductor layer
CN100474529C (zh) 2004-09-16 2009-04-01 S.O.I.泰克绝缘体硅技术公司 制造二氧化硅层的方法
WO2006037783A1 (fr) 2004-10-04 2006-04-13 S.O.I.Tec Silicon On Insulator Technologies Procédé de transfert d'une couche mince comprenant une perturbation controlée d'une structure cristalline
EP1659623B1 (fr) 2004-11-19 2008-04-16 S.O.I. Tec Silicon on Insulator Technologies S.A. Méthode de fabrication d'une plaquette de type germanium sur isolant (GeOI)
FR2884046B1 (fr) 2005-03-31 2007-06-22 Soitec Silicon On Insulator Procede de fabrication de substrat, et substrat
FR2890489B1 (fr) * 2005-09-08 2008-03-07 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant
FR2902233B1 (fr) * 2006-06-09 2008-10-17 Soitec Silicon On Insulator Procede de limitation de diffusion en mode lacunaire dans une heterostructure
FR2903808B1 (fr) 2006-07-11 2008-11-28 Soitec Silicon On Insulator Procede de collage direct de deux substrats utilises en electronique, optique ou opto-electronique
US7575988B2 (en) 2006-07-11 2009-08-18 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating a hybrid substrate
FR2905801B1 (fr) * 2006-09-12 2008-12-05 Soitec Silicon On Insulator Procede de transfert d'une couche a haute temperature
FR2907966B1 (fr) 2006-10-27 2009-01-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat.
FR2914495B1 (fr) 2007-03-29 2009-10-02 Soitec Silicon On Insulator Amelioration de la qualite d'une couche mince par recuit thermique haute temperature.
FR2918792B1 (fr) 2007-07-10 2010-04-23 Soitec Silicon On Insulator Procede de traitement de defauts d'interface dans un substrat.
FR2926672B1 (fr) * 2008-01-21 2010-03-26 Soitec Silicon On Insulator Procede de fabrication de couches de materiau epitaxie
FR2926925B1 (fr) 2008-01-29 2010-06-25 Soitec Silicon On Insulator Procede de fabrication d'heterostructures
FR2934925B1 (fr) 2008-08-06 2011-02-25 Soitec Silicon On Insulator Procede de fabrication d'une structure comprernant une etape d'implantations d'ions pour stabiliser l'interface de collage.
EP2200084A1 (fr) 2008-12-22 2010-06-23 S.O.I. TEC Silicon Procédé de fabrication d'un capteur d'image rétro-éclairé
ATE535937T1 (de) 2009-05-18 2011-12-15 Soitec Silicon On Insulator Herstellungsverfahren für ein hybrid- halbleitersubstrat
EP2378549A1 (fr) 2010-04-06 2011-10-19 S.O.I.Tec Silicon on Insulator Technologies Procédé de fabrication d'un substrat semi-conducteur
EP2390907B1 (fr) 2010-05-25 2012-11-14 Soitec Structure de tranchée dans une tranche multicouche
FR2972567B1 (fr) 2011-03-09 2013-03-22 Soitec Silicon On Insulator Méthode de formation d'une structure de ge sur iii/v sur isolant

Also Published As

Publication number Publication date
WO2012072459A1 (fr) 2012-06-07
FR2968121A1 (fr) 2012-06-01
US20130302970A1 (en) 2013-11-14
US9275892B2 (en) 2016-03-01

Similar Documents

Publication Publication Date Title
FR2968121B1 (fr) Procede de transfert d'une couche a haute temperature
FR2963982B1 (fr) Procede de collage a basse temperature
FR2967813B1 (fr) Procédé de réalisation d'une structure a couche métallique enterrée
WO2007110515A8 (fr) Procede de detachement d'un film mince par fusion de precipites
WO2007142911A3 (fr) Structure semi-conducteur sur isolant réalisée au moyen de recuit par rayonnement
EP4250337A3 (fr) Procédé pour séparer la partie principale d'un substrat semi-conducteur de la couche fonctionnelle qui est incorporée
FR2972567B1 (fr) Méthode de formation d'une structure de ge sur iii/v sur isolant
WO2014025068A3 (fr) Procédé de fabrication d'un verre renforcé ainsi que plaque de verre renforcé
GB2495437A (en) Germanium photodetector
SG195119A1 (en) Method of transferring thin films
WO2012001659A3 (fr) Procédés de passivation in situ de tranches de silicium-sur-isolant
WO2007117153A3 (fr) Cellules solaires et leurs procedes de fabrication
GB2503048A (en) Fabrication of a vertical heterojunction tunnel-fet
WO2012057517A3 (fr) Dispositif à semi-conducteur composite et procédé de fabrication d'un semi-conducteur composite
WO2012064050A3 (fr) Procédé pour la fabrication d'un substrat en nitrure d'élément du groupe iii utilisant un procédé de décollement lift-off chimique
SG166738A1 (en) Method for manufacturing soi substrate and soi substrate
GB2541146A (en) Method of manufacturing a germanium-on-insulator substrate
BR112012019907A2 (pt) transistor, e, método para atuar um dispositivo semicondutor
WO2011097056A3 (fr) Cellules solaires et procédés de fabrication associés
SG11201807344RA (en) Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor–on–insulator type
JP2014518010A5 (fr)
WO2013181117A3 (fr) Élimination de couche de contrainte d'une couche à fissuration et procédé de fabrication de cellule solaire biface l'utilisant
WO2011106484A3 (fr) Substrats en verre microstructurés
SG161182A1 (en) Integrated circuit system employing an elevated drain
MX358792B (es) Método y sistema para formar ventanas de remoción sobre un sustrato de vidrio.

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120907

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14