FR2972567B1 - Méthode de formation d'une structure de ge sur iii/v sur isolant - Google Patents

Méthode de formation d'une structure de ge sur iii/v sur isolant

Info

Publication number
FR2972567B1
FR2972567B1 FR1151939A FR1151939A FR2972567B1 FR 2972567 B1 FR2972567 B1 FR 2972567B1 FR 1151939 A FR1151939 A FR 1151939A FR 1151939 A FR1151939 A FR 1151939A FR 2972567 B1 FR2972567 B1 FR 2972567B1
Authority
FR
France
Prior art keywords
iii
layer
forming
cleaved
donor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1151939A
Other languages
English (en)
Other versions
FR2972567A1 (fr
Inventor
Nicolas Daval
Cecile Aulnette
Bich-Yen Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1151939A priority Critical patent/FR2972567B1/fr
Priority to TW100142766A priority patent/TWI493621B/zh
Priority to JP2011257889A priority patent/JP5521239B2/ja
Priority to SG2011088572A priority patent/SG184620A1/en
Priority to KR1020120003750A priority patent/KR101416736B1/ko
Priority to CN201210022444.6A priority patent/CN102709225B/zh
Priority to US13/399,273 priority patent/US9018678B2/en
Priority to EP12158842A priority patent/EP2498295A1/fr
Publication of FR2972567A1 publication Critical patent/FR2972567A1/fr
Application granted granted Critical
Publication of FR2972567B1 publication Critical patent/FR2972567B1/fr
Priority to KR1020130149155A priority patent/KR101806913B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR1151939A 2011-03-09 2011-03-09 Méthode de formation d'une structure de ge sur iii/v sur isolant Active FR2972567B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1151939A FR2972567B1 (fr) 2011-03-09 2011-03-09 Méthode de formation d'une structure de ge sur iii/v sur isolant
TW100142766A TWI493621B (zh) 2011-03-09 2011-11-22 形成絕緣體上三／五族上鍺一構造之方法
JP2011257889A JP5521239B2 (ja) 2011-03-09 2011-11-25 Ｇｅ・オン・ＩＩＩ／Ｖ族・オン・インシュレータ構造を形成するための方法
SG2011088572A SG184620A1 (en) 2011-03-09 2011-11-30 Method for forming a ge on iii/v-on-insulator structure
KR1020120003750A KR101416736B1 (ko) 2011-03-09 2012-01-12 절연체 상 Ⅲ/Ⅴ 상의 Ｇｅ 구조의 형성 방법
CN201210022444.6A CN102709225B (zh) 2011-03-09 2012-02-01 形成绝缘体上iii/v族上锗结构的方法
US13/399,273 US9018678B2 (en) 2011-03-09 2012-02-17 Method for forming a Ge on III/V-on-insulator structure
EP12158842A EP2498295A1 (fr) 2011-03-09 2012-03-09 Methode de formation d'une structure de Ge sur III/V sur isolant.
KR1020130149155A KR101806913B1 (ko) 2011-03-09 2013-12-03 절연체 상 Ⅲ/Ⅴ 상의 Ｇｅ 구조의 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1151939A FR2972567B1 (fr) 2011-03-09 2011-03-09 Méthode de formation d'une structure de ge sur iii/v sur isolant

Publications (2)

Publication Number Publication Date
FR2972567A1 FR2972567A1 (fr) 2012-09-14
FR2972567B1 true FR2972567B1 (fr) 2013-03-22

Family

ID=43983781

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1151939A Active FR2972567B1 (fr) 2011-03-09 2011-03-09 Méthode de formation d'une structure de ge sur iii/v sur isolant

Country Status (8)

Country Link
US (1) US9018678B2 (fr)
EP (1) EP2498295A1 (fr)
JP (1) JP5521239B2 (fr)
KR (2) KR101416736B1 (fr)
CN (1) CN102709225B (fr)
FR (1) FR2972567B1 (fr)
SG (1) SG184620A1 (fr)
TW (1) TWI493621B (fr)

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FR2968121B1 (fr) 2010-11-30 2012-12-21 Soitec Silicon On Insulator Procede de transfert d'une couche a haute temperature
US8878251B2 (en) * 2012-10-17 2014-11-04 Seoul National University R&Db Foundation Silicon-compatible compound junctionless field effect transistor
US9082692B2 (en) 2013-01-02 2015-07-14 Micron Technology, Inc. Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
US9147803B2 (en) 2013-01-02 2015-09-29 Micron Technology, Inc. Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods
US9716176B2 (en) 2013-11-26 2017-07-25 Samsung Electronics Co., Ltd. FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
US9123569B1 (en) 2014-03-06 2015-09-01 International Business Machines Corporation Complementary metal-oxide-semiconductor structure with III-V and silicon germanium transistors on insulator
US9219150B1 (en) * 2014-09-18 2015-12-22 Soitec Method for fabricating semiconductor structures including fin structures with different strain states, and related semiconductor structures
CN107924810B (zh) * 2015-09-04 2022-09-30 南洋理工大学 包封基板的方法
US10366918B2 (en) * 2016-10-04 2019-07-30 International Business Machines Corporation Self-aligned trench metal-alloying for III-V nFETs
KR102045989B1 (ko) 2018-03-14 2019-11-18 한국과학기술연구원 상호 확산을 사용한 반도체 소자 및 이를 제조하는 방법
US10971522B2 (en) 2018-08-21 2021-04-06 International Business Machines Corporation High mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator
US11393789B2 (en) * 2019-05-31 2022-07-19 Qualcomm Incorporated Stacked circuits of III-V devices over silicon with high quality integrated passives with hybrid bonding

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JPH0616502B2 (ja) * 1983-05-17 1994-03-02 株式会社東芝 半導体素子の製造方法
JPH05160157A (ja) * 1991-12-11 1993-06-25 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
EP1309989B1 (fr) * 2000-08-16 2007-01-10 Massachusetts Institute Of Technology Procede de production d'articles semiconducteurs par croissance epitaxiale graduelle
KR100889886B1 (ko) 2003-01-07 2009-03-20 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 박층을 박리한 후 다층 구조를 포함하는 웨이퍼의 재활용방법
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Also Published As

Publication number Publication date
KR101416736B1 (ko) 2014-07-09
JP5521239B2 (ja) 2014-06-11
US20120228672A1 (en) 2012-09-13
EP2498295A1 (fr) 2012-09-12
TWI493621B (zh) 2015-07-21
KR20120103437A (ko) 2012-09-19
CN102709225A (zh) 2012-10-03
SG184620A1 (en) 2012-10-30
JP2012191170A (ja) 2012-10-04
FR2972567A1 (fr) 2012-09-14
KR20130138711A (ko) 2013-12-19
KR101806913B1 (ko) 2017-12-08
US9018678B2 (en) 2015-04-28
CN102709225B (zh) 2015-10-28
TW201237958A (en) 2012-09-16

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