FR2812477B1 - Module de puissance - Google Patents

Module de puissance

Info

Publication number
FR2812477B1
FR2812477B1 FR0103102A FR0103102A FR2812477B1 FR 2812477 B1 FR2812477 B1 FR 2812477B1 FR 0103102 A FR0103102 A FR 0103102A FR 0103102 A FR0103102 A FR 0103102A FR 2812477 B1 FR2812477 B1 FR 2812477B1
Authority
FR
France
Prior art keywords
power module
module
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0103102A
Other languages
English (en)
Other versions
FR2812477A1 (fr
Inventor
Gourab Majumdar
Mitsutaka Iwasaki
Shinji Hatae
Fumitaka Tametani
Toru Iwagami
Akihisa Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2812477A1 publication Critical patent/FR2812477A1/fr
Application granted granted Critical
Publication of FR2812477B1 publication Critical patent/FR2812477B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
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    • H01L2224/732Location after the connecting process
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    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/1305Bipolar Junction Transistor [BJT]
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    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
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    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR0103102A 2000-07-28 2001-03-07 Module de puissance Expired - Fee Related FR2812477B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000228863A JP4146607B2 (ja) 2000-07-28 2000-07-28 パワーモジュール

Publications (2)

Publication Number Publication Date
FR2812477A1 FR2812477A1 (fr) 2002-02-01
FR2812477B1 true FR2812477B1 (fr) 2004-02-13

Family

ID=18722080

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0103102A Expired - Fee Related FR2812477B1 (fr) 2000-07-28 2001-03-07 Module de puissance

Country Status (4)

Country Link
US (1) US6529062B2 (fr)
JP (1) JP4146607B2 (fr)
DE (1) DE10113967B4 (fr)
FR (1) FR2812477B1 (fr)

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JP2004127983A (ja) * 2002-09-30 2004-04-22 Mitsubishi Electric Corp 電力用半導体装置
JP2005147768A (ja) * 2003-11-12 2005-06-09 Denso Corp 赤外線検出器
US7336485B2 (en) * 2005-10-31 2008-02-26 Hewlett-Packard Development Company, L.P. Heat sink detection
US8812169B2 (en) * 2005-10-31 2014-08-19 Hewlett-Packard Development Company, L.P. Heat sink verification
JP4858290B2 (ja) * 2006-06-05 2012-01-18 株式会社デンソー 負荷駆動装置
JP2008235405A (ja) * 2007-03-19 2008-10-02 Denso Corp 半導体装置
JP5104016B2 (ja) * 2007-04-26 2012-12-19 三菱電機株式会社 パワー半導体モジュール
JP5106528B2 (ja) * 2007-05-29 2012-12-26 京セラ株式会社 電子部品収納用パッケージ、及び電子装置
JP4506848B2 (ja) * 2008-02-08 2010-07-21 株式会社デンソー 半導体モジュール
NO329609B1 (no) * 2008-02-19 2010-11-22 Wartsila Norway As Elektronisk DC-kretsbryter
JP4803241B2 (ja) * 2008-11-27 2011-10-26 三菱電機株式会社 半導体モジュール
JP5318698B2 (ja) * 2009-08-12 2013-10-16 日立オートモティブシステムズ株式会社 パワーモジュール
WO2011048719A1 (fr) 2009-10-22 2011-04-28 パナソニック株式会社 Module semiconducteur de puissance
CN103426840B (zh) * 2012-05-18 2016-12-14 上海拜骋电器有限公司 具有续流二极管的开关装置
JP2014033060A (ja) * 2012-08-03 2014-02-20 Mitsubishi Electric Corp 電力用半導体装置モジュール
JP5863599B2 (ja) * 2012-08-21 2016-02-16 三菱電機株式会社 パワーモジュール
JP5991206B2 (ja) * 2013-01-16 2016-09-14 株式会社豊田自動織機 半導体モジュールおよびインバータモジュール
WO2014147720A1 (fr) * 2013-03-18 2014-09-25 株式会社安川電機 Convertisseur d'énergie électrique
JP2015126084A (ja) * 2013-12-26 2015-07-06 トヨタ自動車株式会社 半導体装置
CN104795388B (zh) * 2015-03-23 2017-11-14 广东美的制冷设备有限公司 智能功率模块及其制造方法
JP7099075B2 (ja) * 2017-08-15 2022-07-12 富士電機株式会社 半導体モジュール
JP6958274B2 (ja) * 2017-11-16 2021-11-02 富士電機株式会社 電力用半導体装置
CN110993516B (zh) * 2019-12-13 2021-06-25 上海贝岭股份有限公司 自钳位igbt器件及其制造方法
DE102022208031A1 (de) * 2022-08-03 2024-02-08 Siemens Aktiengesellschaft Halbleiterbauelement

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EP0262530B1 (fr) 1986-09-23 1993-06-23 Siemens Aktiengesellschaft Composants semi-conducteurs comprenant un MOSFET de puissance et un circuit de commande
FR2619249B1 (fr) * 1987-08-05 1989-12-22 Equip Electr Moteur Regulateur monolithique du courant d'excitation de l'inducteur d'un alternateur a diode de recirculation integree en technologie d'integration verticale
JPH0834709B2 (ja) 1990-01-31 1996-03-29 株式会社日立製作所 半導体集積回路及びそれを使つた電動機制御装置
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JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JPH06181286A (ja) 1992-12-14 1994-06-28 Toshiba Corp 半導体装置
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JP3206717B2 (ja) * 1996-04-02 2001-09-10 富士電機株式会社 電力用半導体モジュール
JP3371240B2 (ja) * 1997-12-02 2003-01-27 ローム株式会社 樹脂パッケージ型半導体装置
JP4014652B2 (ja) * 1997-07-19 2007-11-28 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイスアセンブリ及び回路
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JP3570880B2 (ja) * 1998-02-10 2004-09-29 株式会社荏原電産 パワー制御モジュール
JP2930079B1 (ja) * 1998-08-06 1999-08-03 サンケン電気株式会社 半導体装置
JP3674333B2 (ja) * 1998-09-11 2005-07-20 株式会社日立製作所 パワー半導体モジュール並びにそれを用いた電動機駆動システム
JP2000164800A (ja) * 1998-11-30 2000-06-16 Mitsubishi Electric Corp 半導体モジュール
JP3460973B2 (ja) * 1999-12-27 2003-10-27 三菱電機株式会社 電力変換装置

Also Published As

Publication number Publication date
DE10113967A1 (de) 2002-02-14
JP4146607B2 (ja) 2008-09-10
JP2002043512A (ja) 2002-02-08
US6529062B2 (en) 2003-03-04
US20020030532A1 (en) 2002-03-14
FR2812477A1 (fr) 2002-02-01
DE10113967B4 (de) 2008-08-21

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