JP2005147768A - 赤外線検出器 - Google Patents
赤外線検出器 Download PDFInfo
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- JP2005147768A JP2005147768A JP2003382943A JP2003382943A JP2005147768A JP 2005147768 A JP2005147768 A JP 2005147768A JP 2003382943 A JP2003382943 A JP 2003382943A JP 2003382943 A JP2003382943 A JP 2003382943A JP 2005147768 A JP2005147768 A JP 2005147768A
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- 238000001514 detection method Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims description 32
- 239000012528 membrane Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000020169 heat generation Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
【解決手段】赤外線検出素子10が形成されたセンサチップ20と、赤外線検出素子10の入出力を制御する制御回路チップ31とを有し、センサチップ20が、制御回路チップ31上に積層配置される赤外線検出器100であって、センサチップ20が、制御回路チップ31における相対的に発熱量の小さな領域に配置される赤外線検出器とする。
【選択図】 図1
Description
時間的に一定温度にある経時定温領域は、発熱量および赤外線放射が時間的に一定であり、センサチップ20の赤外線検出素子10が制御回路チップ32dからの赤外線を検出して起電力(センサ出力)がずれても、簡単な温度補正回路により、センサ出力のずれを補正することができる。従って、図4の赤外線検出器102についても、小型で安価であり、かつ高精度な赤外線検出器とすることができる。
上記の各実施形態では、赤外線検出素子が形成されるセンサチップとして、メンブレンを有するシリコン半導体基板からなるセンサチップの例を示した。シリコン半導体基板を用いた場合には、一般的な半導体製造技術により容易にメンブレンを形成することができ、低コストで製造できるため好ましい。しかしながら、赤外線検出素子が形成されるセンサチップはこれに限らず、ガラス等の任意の材料を用いた基板であってよい。また、高感度の赤外線検出素子とするために、基板にメンブレンを形成することが好ましいが、本発明は、メンブレンを有しないセンサチップであっても効果的である。また、赤外線検出素子は、熱電対を用いたものに限らず、薄膜抵抗体の温度による抵抗値変化を利用して赤外線を検出するものであってもよい。
10 赤外線検出素子
10a 熱電対
10ah 温接点
10ac 冷接点
10b 赤外線吸収膜
20 センサチップ
20a (半導体)基板
30〜33 制御回路チップ
32d 断熱層
4 絶縁膜
4a メンブレン
Claims (8)
- 赤外線検出素子が形成されたセンサチップと、前記赤外線検出素子の入出力を制御する制御回路チップとを有し、
前記センサチップが、前記制御回路チップ上に積層配置される赤外線検出器であって、
前記センサチップが、前記制御回路チップにおける相対的に発熱量の小さな領域に配置されることを特徴とする赤外線検出器。 - 前記制御回路チップにおける相対的に発熱量の小さな領域が、回路パターンが配置されていない領域であることを特徴とする請求項1に記載の赤外線検出器。
- 前記制御回路チップにおける相対的に発熱量の小さな領域が、前記赤外線検出素子の信号処理回路が形成される領域であることを特徴とする請求項1に記載の赤外線検出器。
- 赤外線検出素子が形成されたセンサチップと、前記赤外線検出素子の入出力を制御する制御回路チップとを有し、
前記センサチップが、前記制御回路チップ上に積層配置される赤外線検出器であって、
前記制御回路チップの発熱領域上に断熱層が形成され、
前記センサチップが、前記断熱層上に配置されることを特徴とする赤外線検出器。 - 赤外線検出素子が形成されたセンサチップと、前記赤外線検出素子の入出力を制御する制御回路チップとを有し、
前記センサチップが、前記制御回路チップ上に積層配置される赤外線検出器であって、
前記センサチップが、前記制御回路チップの時間的に一定温度にある経時定温領域に配置されることを特徴とする赤外線検出器。 - 前記センサチップが、薄肉部として形成されたメンブレンを有する基板からなり、
前記赤外線検出素子が、前記基板上に形成された熱電対と赤外線吸収膜とからなり、
前記熱電対の温接点が前記メンブレン上に形成され、前記熱電対の冷接点が前記メンブレンの外側の基板上に形成され、
前記赤外線吸収膜が、前記温接点を被覆するようにメンブレン上に形成され、
前記赤外線検出素子が、赤外線を受光したときに前記熱電対における温接点と冷接点との間に生じる温度差によって熱電対の起電力を変化させ、その変化した起電力に基づいて赤外線を検出することを特徴とする請求項1乃至5のいずれか一項に記載の赤外線検出器。 - 前記熱電対が、基板の上に異種材料の膜が交互に複数組直列に延設され、一つおきの接合部が前記温接点と冷接点となることを特徴とする請求項6に記載の赤外線検出器。
- 前記基板が半導体基板であり、
前記赤外線検出素子が、絶縁膜を介して、前記半導体基板上に形成されることを特徴とする請求項6または7に記載の赤外線検出器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003382943A JP2005147768A (ja) | 2003-11-12 | 2003-11-12 | 赤外線検出器 |
DE102004054079A DE102004054079A1 (de) | 2003-11-12 | 2004-11-09 | Infrarotstrahlungsdetektor |
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Application Number | Priority Date | Filing Date | Title |
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JP2003382943A JP2005147768A (ja) | 2003-11-12 | 2003-11-12 | 赤外線検出器 |
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JP2005147768A true JP2005147768A (ja) | 2005-06-09 |
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JP2003382943A Pending JP2005147768A (ja) | 2003-11-12 | 2003-11-12 | 赤外線検出器 |
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DE (1) | DE102004054079A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009079946A (ja) * | 2007-09-26 | 2009-04-16 | Seiko Npc Corp | サーモパイル型赤外線センサ |
JP2013185996A (ja) * | 2012-03-08 | 2013-09-19 | Ngk Spark Plug Co Ltd | 非分散型赤外線分析式ガス検知器 |
US8952331B2 (en) | 2009-12-18 | 2015-02-10 | Panasonic Corporation | Infrared sensor module |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005061206B4 (de) * | 2005-09-30 | 2019-10-17 | Osram Opto Semiconductors Gmbh | Verwendung einer Detektoranordnung als Umgebungslichtsensor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03135739A (ja) * | 1989-10-20 | 1991-06-10 | Tdk Corp | 赤外線検出装置 |
JPH11258040A (ja) * | 1998-03-12 | 1999-09-24 | Omron Corp | サーモパイル型赤外線センサ |
JP2002043512A (ja) * | 2000-07-28 | 2002-02-08 | Mitsubishi Electric Corp | パワーモジュール |
JP2002076248A (ja) * | 2000-08-29 | 2002-03-15 | Oki Micro Design Co Ltd | マルチチップパッケージ |
JP2003017638A (ja) * | 2001-07-02 | 2003-01-17 | Fujitsu Ltd | 積層型マルチチップ半導体装置 |
-
2003
- 2003-11-12 JP JP2003382943A patent/JP2005147768A/ja active Pending
-
2004
- 2004-11-09 DE DE102004054079A patent/DE102004054079A1/de not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03135739A (ja) * | 1989-10-20 | 1991-06-10 | Tdk Corp | 赤外線検出装置 |
JPH11258040A (ja) * | 1998-03-12 | 1999-09-24 | Omron Corp | サーモパイル型赤外線センサ |
JP2002043512A (ja) * | 2000-07-28 | 2002-02-08 | Mitsubishi Electric Corp | パワーモジュール |
JP2002076248A (ja) * | 2000-08-29 | 2002-03-15 | Oki Micro Design Co Ltd | マルチチップパッケージ |
JP2003017638A (ja) * | 2001-07-02 | 2003-01-17 | Fujitsu Ltd | 積層型マルチチップ半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009079946A (ja) * | 2007-09-26 | 2009-04-16 | Seiko Npc Corp | サーモパイル型赤外線センサ |
US8952331B2 (en) | 2009-12-18 | 2015-02-10 | Panasonic Corporation | Infrared sensor module |
JP2013185996A (ja) * | 2012-03-08 | 2013-09-19 | Ngk Spark Plug Co Ltd | 非分散型赤外線分析式ガス検知器 |
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