JP5106528B2 - 電子部品収納用パッケージ、及び電子装置 - Google Patents
電子部品収納用パッケージ、及び電子装置 Download PDFInfo
- Publication number
- JP5106528B2 JP5106528B2 JP2009516210A JP2009516210A JP5106528B2 JP 5106528 B2 JP5106528 B2 JP 5106528B2 JP 2009516210 A JP2009516210 A JP 2009516210A JP 2009516210 A JP2009516210 A JP 2009516210A JP 5106528 B2 JP5106528 B2 JP 5106528B2
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- Prior art keywords
- lead terminal
- electronic component
- container body
- side wall
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 4
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- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 23
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- 239000000463 material Substances 0.000 description 10
- 238000005219 brazing Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000005304 joining Methods 0.000 description 7
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- 238000004519 manufacturing process Methods 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 238000011191 terminal modification Methods 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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Description
<電子部品収納用パッケージ>
(容器体)
容器体10は、アルミナ(Al2O3)質セラミックス,窒化アルミニウム(AlN)質セラミックス,ムライト(3Al2O3・2SiO2)質セラミックス,ジルコニア(ZrO2)質セラミックス,窒化珪素(Si3N4)質セラミックス,炭化珪素(SiC)質セラミックス,樹脂,又はガラス等の誘電体や、銅(Cu)−タングステン(W),銅(Cu)−モリブデン(Mo),鉄(Fe)−ニッケル(Ni)−コバルト(Co)合金,銅(Cu),又はステンレス鋼(SUS)等の金属から成る。
(支持部の変形例)
上述の支持部6の説明では、打ち抜き加工によって、側壁2と支持部6とが一体成型される構成を示したが、これに限られるものではなく、支持部6を別途容器体10に設けてもよい。この場合、電子部品4の上面に設けられた電極と、後述するリード端子3上面との高さ位置を調節し易くなる。それゆえ、ボンディングワイヤ等の接続線5の接続の際に作業性を向上できる。
(リード端子)
リード端子3は、Cu,Ag,Fe−Ni−Co合金,Fe−Ni合金,Fe,又はSUS等の金属から成る。電気電導率の観点から、リード端子3の材質はCuまたはAgから成るのがよい。
図3に示すように、リード端子3は、搭載部1a上に延出してなることが好ましい。この構成により、電子部品4をリード端子3に直接接続させることができ、大電流の電気信号が抵抗損失等によって損なわれることなく、効率よく電子部品4に入出力されるようになる。すなわち、図3において、3本のリード端子3のうち、中央のリード端子3は搭載部1aとなる搭載基板3dも兼ねており、電子部品4の下面に設けられた電極は、この搭載基板3dに電気的に接続されている。
リード端子3は、図2に示すように、リード端子3の容器体10に挿通された容器体10の内側となる部分に湾曲部3bを設けておくとよい。この湾曲部3bにより、リード端子3の側壁2との接合部から支持部6との接合部の間の部分が熱膨張により伸縮しても湾曲部3bでリード端子3が変形し易くなり、リード端子3に折れ曲がり変形が生じることを抑制することができる。なお、湾曲部3bの形状は、半円形の円弧状に曲げられた形状の他、三角形状に曲げられたものであったり、四角形状に曲げられたものであったりしても良く、種々の形状とすることができる。湾曲部3bは、リード端子3の作製時にプレス加工することによって形成される。
図4に示すように、リード端子3は、容器体10の側壁2を貫通する部位に鍔部3cを有し、鍔部3cで容器体10の外側面の貫通孔周囲に接合されているのが良い。鍔部3cはリード端子3と成る金属線材にプレスフォーミングを施すことによって一体的に設けられたり、リード端子3と成る金属線材の所定の位置に鍔部3cと成る環状のワッシャをAg−Cuロウ等によるロウ付けによって設けられたりする。この構成により、リード端子3と側壁2との接合部の気密信頼性を向上させることができ、かつリード端子3の先端部3aの下面が支持部6によって支持固定されている場合、リード端子3の鍔部3cから支持部6の間の部分が熱膨張により伸縮しても鍔部3cが適度に変形し、リード端子3に折れ曲がり変形が生じることを抑制することができる。鍔部3cの正面視形状は、図4に示す八角形状である他に、四角形等の多角形,円形,楕円形,菱形等としても良く、種々の形状とすることができる。
接続線5は、リード端子3と電子部品4とを低抵抗で接続するために、直径が300μm〜500μmの直径を有するボンディングワイヤを用いるのが良い。このような接続線5の材質は、電気電導性の観点から、例えば、アルミニウム(Al),金(Au)等から成るのがよい。また、接続線5は、ボンディングワイヤに限らず、銅線をハンダ付けした接続線5や断面積の大きいリボンワイヤ等が用いられてもよい。
(電子部品)
電子部品4は、例えば、ダイオード,FET(Field Effect Transistor),MOSFET(Metal Oxide SemiconductorField Effect Transistor),IGBT(InsulatedGate Bipolar Transistor),又はサイリスター等の大電流の電気信号で作動する大電力用の電子部品である。電子部品4は、Fe−Ni−Co合金,Fe−Ni合金,Cu,Cu−W等の金属から成るリード端子3の搭載基板3dの搭載部1aに載置固定され、電子部品4の電極がリード端子3にボンディングワイヤ等の接続線5を介して電気的に接続される。この場合、電子部品4の下面にも電極が形成され、搭載基板3dと電子部品4の下面の電極とが金(Au)−錫(Sn)半田,金(Au)−ゲルマニウム(Ge)半田等の半田やAg−Cuロウ等のロウ材を介して直接電気的に接続されていても良い。
1a:搭載部
2:側壁
2a:溝
3:リード端子
3a:先端部
3b:湾曲部
3c:鍔部
4:電子部品
5:接続線
6:支持部
6a:間隙部
7:蓋体
10:容器体
Claims (8)
- 上面に電子部品を搭載するための矩形状の搭載部を有し、該搭載部を取り囲むように設けられた側壁を有する容器体と、
前記上面と前記側壁とで囲われた空間の内外を貫通するように配置され、先端部を前記搭載部の一辺に沿わせて取り付けたリード端子と、
を具備し、
前記リード端子の上面は、前記搭載部よりも上方に位置してなるとともに、
前記容器体は、前記リード端子の前記先端部をその下面から支持する支持部を有し、
前記支持部上面と前記リード端子の前記先端部の下面とは接合領域と、前記支持部と前記リード端子とが接合しない非接合領域とを有し、
前記非接合領域は、前記側壁の内側面と前記リード端子の前記先端部の下面とを有してなる間隙部であるとともに、
前記リード端子は、前記容器体の内側となる部分に湾曲部を有する電子部品収納用パッケージ。 - 前記リード端子は、その長手方向の前記電子部品側の側面が露出してなることを特徴とする請求項1に記載の電子部品収納用パッケージ。
- 前記リード端子は、複数本が平行するように設けられており、隣り合う前記リード端子の間の前記リード端子が貫通する前記容器体の表面に溝が形成されていることを特徴とする請求項1または請求項2に記載の電子部品収納用パッケージ。
- 複数の前記リード端子は、前記搭載部の両側に配して取り付けられていることを特徴とする請求項1乃至請求項3のいずれかに記載の電子部品収納用パッケージ。
- 前記リード端子は、前記搭載部上に延出してなることを特徴とする請求項1乃至請求項4のいずれかに記載の電子部品収納用パッケージ。
- 請求項1乃至請求項5のいずれかに記載の電子部品収納用パッケージと、
上面に電極を備え、前記搭載部上に搭載された電子部品と、
前記リード端子と前記電極とを電気的に接続された複数の接続線と、
前記側壁の上面に前記容器体の内側を塞ぐように取着された蓋体と、
を具備していることを特徴とする電子装置。 - 前記電子部品は、MOSFET(Metal Oxide Semiconductor
Field Effect Transistor)であることを特徴とする請求項6に
記載の電子装置。 - 前記リード端子を複数備え、前記電子部品のドレイン電極と電気的に接続される前記リード端子は、その長手方向断面積が、他の前記リード端子の長手方向断面積よりも大きいものであることを特徴とする請求項7に記載の電子装置。
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JP2009516210A JP5106528B2 (ja) | 2007-05-29 | 2008-03-27 | 電子部品収納用パッケージ、及び電子装置 |
PCT/JP2008/055929 WO2008146531A1 (ja) | 2007-05-29 | 2008-03-27 | 電子部品収納用パッケージ、及び電子装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP5597727B2 (ja) * | 2011-01-20 | 2014-10-01 | 京セラ株式会社 | 半導体素子収納用パッケージ、およびこれを備えた半導体装置 |
JP2012248777A (ja) * | 2011-05-31 | 2012-12-13 | Kyocera Corp | 素子収納用パッケージおよびこれを備えた半導体モジュール |
US8895994B2 (en) * | 2012-06-27 | 2014-11-25 | Schlumberger Technology Corporation | Electronic device including silicon carbide diode dies |
JP2014207388A (ja) * | 2013-04-15 | 2014-10-30 | 株式会社東芝 | 半導体パッケージ |
EP3118895B1 (en) * | 2014-03-13 | 2020-04-01 | Kyocera Corporation | Package for housing an electronic component and electronic device including the package |
US10903128B2 (en) * | 2019-02-15 | 2021-01-26 | Microsemi Corporation | Hermetic package for power semiconductor |
CN111129128A (zh) * | 2020-01-10 | 2020-05-08 | 东莞市柏尔电子科技有限公司 | 一种耐高压冲击的高压2sb772p型大功率三极管的生产工艺 |
CN115692469B (zh) * | 2022-10-26 | 2024-01-09 | 无锡昌德微电子股份有限公司 | 一种高可靠性均流设计的音频晶体管 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5532004U (ja) * | 1978-08-21 | 1980-03-01 | ||
JPS57115253U (ja) * | 1981-01-07 | 1982-07-16 | ||
JPS57201840U (ja) * | 1981-06-17 | 1982-12-22 | ||
JPS6428943A (en) * | 1987-07-24 | 1989-01-31 | Mitsubishi Electric Corp | Package for semiconductor integrated circuit |
JPH0379065A (ja) * | 1989-08-22 | 1991-04-04 | Nec Corp | 半導体装置用リードフレーム |
JPH03120849A (ja) * | 1989-10-04 | 1991-05-23 | Shinko Electric Ind Co Ltd | 半導体装置 |
JPH08167677A (ja) * | 1994-12-14 | 1996-06-25 | Hitachi Ltd | 半導体モジュール |
JPH08222653A (ja) * | 1995-02-09 | 1996-08-30 | Kyocera Corp | 半導体装置 |
JP2000195894A (ja) * | 1998-12-24 | 2000-07-14 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2003068967A (ja) * | 2001-08-29 | 2003-03-07 | Denso Corp | 半導体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52116074A (en) * | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Electronic part |
JPS598358Y2 (ja) * | 1978-02-08 | 1984-03-15 | 京セラ株式会社 | 半導体素子パツケ−ジ |
JPS5532004A (en) | 1978-08-25 | 1980-03-06 | Ricoh Co Ltd | Hologram information memory device |
JPS57115253A (en) | 1980-07-28 | 1982-07-17 | Advance Kk | Pasturized adhesive drug containing bandage |
US4780572A (en) * | 1985-03-04 | 1988-10-25 | Ngk Spark Plug Co., Ltd. | Device for mounting semiconductors |
JP2566207B2 (ja) * | 1986-09-23 | 1996-12-25 | シーメンス、アクチエンゲゼルシヤフト | 半導体デバイス |
JP3077505B2 (ja) | 1994-04-21 | 2000-08-14 | 日立電線株式会社 | リードフレームの製造方法 |
EP0740850A1 (en) * | 1994-10-14 | 1996-11-06 | National Semiconductor Corporation | Hermetically sealed hybrid ceramic integrated circuit package |
US5814884C1 (en) * | 1996-10-24 | 2002-01-29 | Int Rectifier Corp | Commonly housed diverse semiconductor die |
US6348727B1 (en) * | 1998-12-15 | 2002-02-19 | International Rectifier Corporation | High current semiconductor device package with plastic housing and conductive tab |
JP4146607B2 (ja) * | 2000-07-28 | 2008-09-10 | 三菱電機株式会社 | パワーモジュール |
US6459148B1 (en) * | 2000-11-13 | 2002-10-01 | Walsin Advanced Electronics Ltd | QFN semiconductor package |
JP3766621B2 (ja) | 2001-10-05 | 2006-04-12 | 京セラ株式会社 | 入出力端子および半導体素子収納用パッケージ |
US6803648B1 (en) * | 2003-01-10 | 2004-10-12 | National Semiconductor Corporation | Integrated circuit packages with interconnects on top and bottom surfaces |
JP2005216641A (ja) | 2004-01-29 | 2005-08-11 | Kyocera Corp | 気密端子 |
US7208818B2 (en) * | 2004-07-20 | 2007-04-24 | Alpha And Omega Semiconductor Ltd. | Power semiconductor package |
-
2008
- 2008-03-27 US US12/602,461 patent/US8405200B2/en active Active
- 2008-03-27 JP JP2009516210A patent/JP5106528B2/ja active Active
- 2008-03-27 EP EP08739058.9A patent/EP2159837B1/en active Active
- 2008-03-27 WO PCT/JP2008/055929 patent/WO2008146531A1/ja active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5532004U (ja) * | 1978-08-21 | 1980-03-01 | ||
JPS57115253U (ja) * | 1981-01-07 | 1982-07-16 | ||
JPS57201840U (ja) * | 1981-06-17 | 1982-12-22 | ||
JPS6428943A (en) * | 1987-07-24 | 1989-01-31 | Mitsubishi Electric Corp | Package for semiconductor integrated circuit |
JPH0379065A (ja) * | 1989-08-22 | 1991-04-04 | Nec Corp | 半導体装置用リードフレーム |
JPH03120849A (ja) * | 1989-10-04 | 1991-05-23 | Shinko Electric Ind Co Ltd | 半導体装置 |
JPH08167677A (ja) * | 1994-12-14 | 1996-06-25 | Hitachi Ltd | 半導体モジュール |
JPH08222653A (ja) * | 1995-02-09 | 1996-08-30 | Kyocera Corp | 半導体装置 |
JP2000195894A (ja) * | 1998-12-24 | 2000-07-14 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2003068967A (ja) * | 2001-08-29 | 2003-03-07 | Denso Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
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EP2159837B1 (en) | 2018-01-17 |
US8405200B2 (en) | 2013-03-26 |
WO2008146531A1 (ja) | 2008-12-04 |
US20100200932A1 (en) | 2010-08-12 |
EP2159837A4 (en) | 2012-02-29 |
JPWO2008146531A1 (ja) | 2010-08-19 |
EP2159837A1 (en) | 2010-03-03 |
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