FR2778269B1 - Procede de fabrication d'un condensateur de cellule de memoire dynamique - Google Patents

Procede de fabrication d'un condensateur de cellule de memoire dynamique

Info

Publication number
FR2778269B1
FR2778269B1 FR9903571A FR9903571A FR2778269B1 FR 2778269 B1 FR2778269 B1 FR 2778269B1 FR 9903571 A FR9903571 A FR 9903571A FR 9903571 A FR9903571 A FR 9903571A FR 2778269 B1 FR2778269 B1 FR 2778269B1
Authority
FR
France
Prior art keywords
manufacturing
memory cell
dynamic memory
cell capacitor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9903571A
Other languages
English (en)
Other versions
FR2778269A1 (fr
Inventor
Won Choi Chang
Hwan Lee Chang
Jung Chul
Seok Han Min
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2778269A1 publication Critical patent/FR2778269A1/fr
Application granted granted Critical
Publication of FR2778269B1 publication Critical patent/FR2778269B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9903571A 1998-04-29 1999-03-23 Procede de fabrication d'un condensateur de cellule de memoire dynamique Expired - Lifetime FR2778269B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980015302A KR100301370B1 (ko) 1998-04-29 1998-04-29 디램셀커패시터의제조방법

Publications (2)

Publication Number Publication Date
FR2778269A1 FR2778269A1 (fr) 1999-11-05
FR2778269B1 true FR2778269B1 (fr) 2005-02-11

Family

ID=19536857

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9903571A Expired - Lifetime FR2778269B1 (fr) 1998-04-29 1999-03-23 Procede de fabrication d'un condensateur de cellule de memoire dynamique

Country Status (8)

Country Link
US (1) US6165840A (fr)
JP (1) JP3999403B2 (fr)
KR (1) KR100301370B1 (fr)
CN (1) CN1140926C (fr)
DE (1) DE19907062B4 (fr)
FR (1) FR2778269B1 (fr)
GB (1) GB2336942B (fr)
TW (1) TW434892B (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2352561B (en) * 1998-07-16 2003-02-19 Samsung Electronics Co Ltd DRAM cell capacitor
KR100319560B1 (ko) * 1999-05-03 2002-01-05 윤종용 물리 화학적 연마(cmp) 저지막을 사용한 커패시터 스토리지 전극 형성 방법
JP3242901B2 (ja) 1999-06-18 2001-12-25 日本エー・エス・エム株式会社 半導体形成方法及び装置
DE19929723B4 (de) * 1999-06-29 2004-05-06 Infineon Technologies Ag Verfahren zur Herstellung einer Elektrode
US6312988B1 (en) 1999-09-02 2001-11-06 Micron Technology, Inc. Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions
JP3400756B2 (ja) * 1999-09-22 2003-04-28 日本エー・エス・エム株式会社 半導体素子の製造方法
KR100373344B1 (ko) * 1999-12-30 2003-02-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP4651169B2 (ja) * 2000-08-31 2011-03-16 富士通株式会社 半導体装置及びその製造方法
JP3875047B2 (ja) * 2001-06-22 2007-01-31 シャープ株式会社 半導体基板の面方位依存性評価方法及びそれを用いた半導体装置
KR100418573B1 (ko) * 2001-09-14 2004-02-11 주식회사 하이닉스반도체 반도체소자의 제조 방법
KR100735015B1 (ko) * 2002-10-16 2007-07-03 삼성전자주식회사 셀프얼라인된 스토리지 노드를 구비한 반도체 장치의제조방법
KR100865547B1 (ko) * 2005-12-02 2008-10-28 주식회사 하이닉스반도체 스토리지노드를 갖는 반도체소자의 제조방법
KR100772687B1 (ko) * 2006-04-28 2007-11-02 주식회사 하이닉스반도체 반도체 소자 제조방법
KR101742817B1 (ko) * 2011-08-23 2017-06-02 삼성전자 주식회사 반도체 소자 및 그 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723530B2 (ja) * 1988-04-13 1998-03-09 日本電気株式会社 ダイナミック型ランダムアクセスメモリ装置の製造方法
TW243541B (fr) * 1991-08-31 1995-03-21 Samsung Electronics Co Ltd
KR940006682B1 (ko) * 1991-10-17 1994-07-25 삼성전자 주식회사 반도체 메모리장치의 제조방법
KR960010002B1 (ko) * 1991-12-18 1996-07-25 삼성전자 주식회사 고집적 반도체 메모리장치의 커패시터 제조방법
JPH05218343A (ja) * 1992-01-31 1993-08-27 Sony Corp 半導体装置およびその製造方法
DE4223878C2 (de) * 1992-06-30 1995-06-08 Siemens Ag Herstellverfahren für eine Halbleiterspeicheranordnung
US5392189A (en) * 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
KR0165496B1 (ko) * 1995-03-22 1998-12-15 윤종용 고집적 반도체장치의 캐패시터 제조방법
US5597756A (en) * 1995-06-21 1997-01-28 Micron Technology, Inc. Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack
JP2930016B2 (ja) * 1996-07-04 1999-08-03 日本電気株式会社 半導体装置の製造方法
US5677222A (en) * 1996-10-11 1997-10-14 Vanguard International Semiconductor Corporation Method for forming a DRAM capacitor
GB2322964B (en) * 1997-03-07 2001-10-17 United Microelectronics Corp Polysilicon CMP process for high-density DRAM cell structures
US5792690A (en) * 1997-05-15 1998-08-11 Vanguard International Semiconductor Corporation Method of fabricating a DRAM cell with an area equal to four times the used minimum feature
TW345741B (en) * 1997-11-25 1998-11-21 United Microelectronics Corp Process for producing a capacitor for DRAM

Also Published As

Publication number Publication date
KR100301370B1 (ko) 2001-10-27
DE19907062A1 (de) 1999-11-11
GB9901728D0 (en) 1999-03-17
CN1140926C (zh) 2004-03-03
CN1236992A (zh) 1999-12-01
GB2336942A (en) 1999-11-03
FR2778269A1 (fr) 1999-11-05
TW434892B (en) 2001-05-16
US6165840A (en) 2000-12-26
GB2336942B (en) 2000-08-09
JP3999403B2 (ja) 2007-10-31
KR19990081391A (ko) 1999-11-15
JPH11330404A (ja) 1999-11-30
DE19907062B4 (de) 2004-11-04

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