FR2662854B1 - Structure de trou de connexion isolee pour des dispositifs a semiconducteurs et procede de fabrication. - Google Patents

Structure de trou de connexion isolee pour des dispositifs a semiconducteurs et procede de fabrication.

Info

Publication number
FR2662854B1
FR2662854B1 FR9106802A FR9106802A FR2662854B1 FR 2662854 B1 FR2662854 B1 FR 2662854B1 FR 9106802 A FR9106802 A FR 9106802A FR 9106802 A FR9106802 A FR 9106802A FR 2662854 B1 FR2662854 B1 FR 2662854B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor devices
connection hole
hole structure
insulated connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9106802A
Other languages
English (en)
Other versions
FR2662854A1 (fr
Inventor
Makio Komaru
Michihiro Kobiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2662854A1 publication Critical patent/FR2662854A1/fr
Application granted granted Critical
Publication of FR2662854B1 publication Critical patent/FR2662854B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR9106802A 1990-06-05 1991-06-05 Structure de trou de connexion isolee pour des dispositifs a semiconducteurs et procede de fabrication. Expired - Fee Related FR2662854B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2148181A JP2551203B2 (ja) 1990-06-05 1990-06-05 半導体装置

Publications (2)

Publication Number Publication Date
FR2662854A1 FR2662854A1 (fr) 1991-12-06
FR2662854B1 true FR2662854B1 (fr) 1997-10-17

Family

ID=15447061

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9106802A Expired - Fee Related FR2662854B1 (fr) 1990-06-05 1991-06-05 Structure de trou de connexion isolee pour des dispositifs a semiconducteurs et procede de fabrication.

Country Status (4)

Country Link
US (2) US5225707A (fr)
JP (1) JP2551203B2 (fr)
FR (1) FR2662854B1 (fr)
GB (1) GB2245424B (fr)

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JP2920854B2 (ja) * 1991-08-01 1999-07-19 富士通株式会社 ビィアホール構造及びその形成方法
JP2549795B2 (ja) * 1992-03-17 1996-10-30 株式会社東芝 化合物半導体集積回路及びその製造方法
US5604159A (en) * 1994-01-31 1997-02-18 Motorola, Inc. Method of making a contact structure
JP3374880B2 (ja) * 1994-10-26 2003-02-10 三菱電機株式会社 半導体装置の製造方法、及び半導体装置
JP2730541B2 (ja) * 1996-02-29 1998-03-25 日本電気株式会社 化合物半導体装置
JP3193867B2 (ja) * 1996-03-26 2001-07-30 シャープ株式会社 半導体ウェハ上への電極形成方法
GB2317500B (en) * 1996-03-27 1998-08-05 Mitsubishi Electric Corp Semiconductor device manufacture
JPH09260405A (ja) * 1996-03-27 1997-10-03 Mitsubishi Electric Corp 半導体装置とその製造方法
US5914517A (en) * 1996-07-16 1999-06-22 Nippon Steel Corporation Trench-isolation type semiconductor device
US6046109A (en) * 1997-12-29 2000-04-04 Industrial Technology Research Institute Creation of local semi-insulating regions on semiconductor substrates
US6576113B1 (en) * 1999-10-29 2003-06-10 California Institute Of Technology Method of electroplating of high aspect ratio metal structures into semiconductors
JP2003514381A (ja) * 1999-11-11 2003-04-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電界効果トランジスタを有する半導体装置およびその製造方法
US6462950B1 (en) * 2000-11-29 2002-10-08 Nokia Mobile Phones Ltd. Stacked power amplifier module
US7078743B2 (en) * 2003-05-15 2006-07-18 Matsushita Electric Industrial Co., Ltd. Field effect transistor semiconductor device
US7800097B2 (en) * 2004-12-13 2010-09-21 Panasonic Corporation Semiconductor device including independent active layers and method for fabricating the same
US8575651B2 (en) * 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US9331192B2 (en) 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
JP2007149794A (ja) * 2005-11-25 2007-06-14 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JP2007157829A (ja) * 2005-12-01 2007-06-21 Matsushita Electric Ind Co Ltd 半導体装置
JP2007184553A (ja) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US8035223B2 (en) * 2007-08-28 2011-10-11 Research Triangle Institute Structure and process for electrical interconnect and thermal management
US8304809B2 (en) * 2007-11-16 2012-11-06 Furukawa Electric Co., Ltd. GaN-based semiconductor device and method of manufacturing the same
JP5548426B2 (ja) * 2009-10-29 2014-07-16 株式会社日立製作所 インクジェット塗布装置及び方法
JP2012038885A (ja) * 2010-08-06 2012-02-23 Panasonic Corp 半導体装置及びその製造方法
JP2014007296A (ja) * 2012-06-25 2014-01-16 Advanced Power Device Research Association 半導体装置及び半導体装置の製造方法
KR101729653B1 (ko) * 2013-12-30 2017-04-25 한국전자통신연구원 질화물 반도체 소자

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US3969745A (en) * 1974-09-18 1976-07-13 Texas Instruments Incorporated Interconnection in multi element planar structures
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
JPS5935187B2 (ja) * 1976-12-17 1984-08-27 日本電気株式会社 電力用高耐圧電界効果トランジスタ
NL8005673A (nl) * 1980-10-15 1982-05-03 Philips Nv Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.
JPS57177537A (en) * 1981-04-24 1982-11-01 Matsushita Electric Ind Co Ltd Isolation of semiconductor element
JPS58206170A (ja) * 1982-05-27 1983-12-01 Toshiba Corp 化合物半導体装置
JPS59168677A (ja) * 1983-03-14 1984-09-22 Fujitsu Ltd 半導体装置及びその製造方法
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
KR900001394B1 (en) * 1985-04-05 1990-03-09 Fujitsu Ltd Super high frequency intergrated circuit device
JPS6252969A (ja) * 1985-08-30 1987-03-07 Nippon Texas Instr Kk 絶縁ゲ−ト型電界効果半導体装置
KR900008647B1 (ko) * 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 3차원 집적회로와 그의 제조방법
JPS62243370A (ja) * 1986-04-15 1987-10-23 Nec Corp 高周波電界効果トランジスタ
US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
JP2681887B2 (ja) * 1987-03-06 1997-11-26 シ−メンス、アクチエンゲゼルシヤフト ３次元１トランジスタメモリセル構造とその製法
JPS6437835A (en) * 1987-08-04 1989-02-08 Nec Corp Formation of layer of semiconductor device through ion implantation
JP2519474B2 (ja) * 1987-09-19 1996-07-31 松下電子工業株式会社 溝形キャパシタの製造方法
JPH01293615A (ja) * 1988-05-23 1989-11-27 Nec Corp 半導体装置の製造方法
JPH0243742A (ja) * 1988-08-04 1990-02-14 Fujitsu Ltd 化合物半導体装置の製造方法
JP2517375B2 (ja) * 1988-12-19 1996-07-24 三菱電機株式会社 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法
US5105253A (en) * 1988-12-28 1992-04-14 Synergy Semiconductor Corporation Structure for a substrate tap in a bipolar structure
JPH02271535A (ja) * 1988-12-28 1990-11-06 Synergy Semiconductor Corp バイポーラ構造における基板タップ及びこの製造方法
US5017999A (en) * 1989-06-30 1991-05-21 Honeywell Inc. Method for forming variable width isolation structures

Also Published As

Publication number Publication date
JPH0439968A (ja) 1992-02-10
GB2245424A (en) 1992-01-02
US5362678A (en) 1994-11-08
FR2662854A1 (fr) 1991-12-06
GB2245424B (en) 1994-11-23
JP2551203B2 (ja) 1996-11-06
US5225707A (en) 1993-07-06
GB9111249D0 (en) 1991-07-17

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