FR2701166B1 - Transistor a effet de champ et procede pour la fabrication d'un tel transistor. - Google Patents

Transistor a effet de champ et procede pour la fabrication d'un tel transistor.

Info

Publication number
FR2701166B1
FR2701166B1 FR9310400A FR9310400A FR2701166B1 FR 2701166 B1 FR2701166 B1 FR 2701166B1 FR 9310400 A FR9310400 A FR 9310400A FR 9310400 A FR9310400 A FR 9310400A FR 2701166 B1 FR2701166 B1 FR 2701166B1
Authority
FR
France
Prior art keywords
transistor
manufacturing
field effect
effect transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9310400A
Other languages
English (en)
Other versions
FR2701166A1 (fr
Inventor
Yasutaka Kohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2701166A1 publication Critical patent/FR2701166A1/fr
Priority to FR9410496A priority Critical patent/FR2709378B1/fr
Application granted granted Critical
Publication of FR2701166B1 publication Critical patent/FR2701166B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
FR9310400A 1993-01-29 1993-08-31 Transistor a effet de champ et procede pour la fabrication d'un tel transistor. Expired - Fee Related FR2701166B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9410496A FR2709378B1 (fr) 1993-01-29 1994-08-31 Transistor à effet de champ et procédé pour la fabrication d'un tel transistor.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5013607A JPH06232170A (ja) 1993-01-29 1993-01-29 電界効果トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
FR2701166A1 FR2701166A1 (fr) 1994-08-05
FR2701166B1 true FR2701166B1 (fr) 1995-11-24

Family

ID=11837922

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9310400A Expired - Fee Related FR2701166B1 (fr) 1993-01-29 1993-08-31 Transistor a effet de champ et procede pour la fabrication d'un tel transistor.

Country Status (4)

Country Link
US (1) US5471073A (fr)
JP (1) JPH06232170A (fr)
FR (1) FR2701166B1 (fr)
GB (1) GB2274944B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0822998A (ja) * 1994-07-06 1996-01-23 Mitsubishi Electric Corp 半導体装置、及びその製造方法
JPH0982726A (ja) * 1995-09-12 1997-03-28 Mitsubishi Electric Corp 半導体装置の製造方法
AU747878B2 (en) * 1998-04-09 2002-05-30 California Institute Of Technology Electronic techniques for analyte detection
JP4022708B2 (ja) * 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
JP4597479B2 (ja) * 2000-11-22 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP2003086708A (ja) 2000-12-08 2003-03-20 Hitachi Ltd 半導体装置及びその製造方法
JP2003023015A (ja) 2001-07-06 2003-01-24 Mitsubishi Electric Corp ＧａＡｓ系半導体電界効果トランジスタ
JP4173672B2 (ja) * 2002-03-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP4030383B2 (ja) 2002-08-26 2008-01-09 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6943391B2 (en) * 2003-11-21 2005-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Modification of carrier mobility in a semiconductor device
EP1879645A4 (fr) * 2005-04-28 2009-11-04 California Inst Of Techn Systemes de protheses retiniennes intra-oculaires souples fabriquees par lots, et leur procede de fabrication
US7498270B2 (en) * 2005-09-30 2009-03-03 Tokyo Electron Limited Method of forming a silicon oxynitride film with tensile stress
JP2007305666A (ja) 2006-05-09 2007-11-22 Toshiba Corp 半導体装置およびその製造方法
JP5478295B2 (ja) * 2010-02-19 2014-04-23 ラピスセミコンダクタ株式会社 半導体装置の製造方法
KR101774933B1 (ko) * 2010-03-02 2017-09-06 삼성전자 주식회사 듀얼 디플리션을 나타내는 고 전자 이동도 트랜지스터 및 그 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2834724A1 (de) * 1978-08-08 1980-02-14 Siemens Ag Mos-feldeffekttransistoren fuer hoehere spannungen
JPS5852881A (ja) * 1981-09-25 1983-03-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS6161465A (ja) * 1984-09-03 1986-03-29 Hitachi Ltd Ｍｏｓ形電界効果トランジスタおよびその製造方法
EP0178133B1 (fr) * 1984-10-08 1990-12-27 Fujitsu Limited Dispositif semi-conducteur à circuit intégré
JPS61123187A (ja) * 1984-11-09 1986-06-11 Fujitsu Ltd 半導体装置の製造方法
US4777517A (en) * 1984-11-29 1988-10-11 Fujitsu Limited Compound semiconductor integrated circuit device
JPS61129878A (ja) * 1984-11-29 1986-06-17 Fujitsu Ltd 半導体装置
JPS62190768A (ja) * 1986-02-17 1987-08-20 Fujitsu Ltd 半導体装置
JPH01204476A (ja) * 1988-02-09 1989-08-17 Nec Corp 半導体装置及びその製造方法
JP2544781B2 (ja) * 1988-07-20 1996-10-16 沖電気工業株式会社 半導体素子の製造方法
JP2562840B2 (ja) * 1988-08-01 1996-12-11 富士通株式会社 電界効果トランジスタ
JP2553690B2 (ja) * 1989-02-13 1996-11-13 三菱電機株式会社 非対称構造ｆｅｔの製造方法

Also Published As

Publication number Publication date
GB2274944A (en) 1994-08-10
JPH06232170A (ja) 1994-08-19
GB2274944B (en) 1997-04-23
GB9316182D0 (en) 1993-09-22
FR2701166A1 (fr) 1994-08-05
US5471073A (en) 1995-11-28

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Legal Events

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ST Notification of lapse