JPS6437835A - Formation of layer of semiconductor device through ion implantation - Google Patents

Formation of layer of semiconductor device through ion implantation

Info

Publication number
JPS6437835A
JPS6437835A JP19368087A JP19368087A JPS6437835A JP S6437835 A JPS6437835 A JP S6437835A JP 19368087 A JP19368087 A JP 19368087A JP 19368087 A JP19368087 A JP 19368087A JP S6437835 A JPS6437835 A JP S6437835A
Authority
JP
Japan
Prior art keywords
substrate
ions
concentration distribution
energy
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19368087A
Other languages
Japanese (ja)
Inventor
Hideki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19368087A priority Critical patent/JPS6437835A/en
Publication of JPS6437835A publication Critical patent/JPS6437835A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To form an ion implanting layer in arbitrary concentration distribution in the depth direction of a substrate by varying the energy of implanting ion beams continuously or by stages. CONSTITUTION:An N epitaxial layer 2 is formed onto a P-type substrate 1, and a mask 4 for implanting ions is executed. O<+> ions are implanted so as to reach to the substrate 1 from the surface, thus shaping a pair of SiO2 layers 3. Beam energy is changed continuously or by stages at that time. The range of variation of beams is brought to approximately several keV-200keV, and beam currents are kept constant with the fluctuation of energy or beam currents are controlled, thus acquiring desired concentration distribution. According to the constitution, a region in which the concentration distribution of O<+> ions is kept constant is formed deeply up to the substrate 1, thus obtaining the SiO2 layers 3 for element isolation.
JP19368087A 1987-08-04 1987-08-04 Formation of layer of semiconductor device through ion implantation Pending JPS6437835A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19368087A JPS6437835A (en) 1987-08-04 1987-08-04 Formation of layer of semiconductor device through ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19368087A JPS6437835A (en) 1987-08-04 1987-08-04 Formation of layer of semiconductor device through ion implantation

Publications (1)

Publication Number Publication Date
JPS6437835A true JPS6437835A (en) 1989-02-08

Family

ID=16312000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19368087A Pending JPS6437835A (en) 1987-08-04 1987-08-04 Formation of layer of semiconductor device through ion implantation

Country Status (1)

Country Link
JP (1) JPS6437835A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288650A (en) * 1991-01-25 1994-02-22 Ibis Technology Corporation Prenucleation process for simox device fabrication
US5346841A (en) * 1990-08-21 1994-09-13 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device using ion implantation
US5362678A (en) * 1990-06-05 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing insulated via hole structure for semiconductor device
WO1995018462A1 (en) * 1993-12-28 1995-07-06 Nippon Steel Corporation Method and device for manufacturing semiconductor substrate
DE102016104274B4 (en) 2015-03-25 2021-12-16 Toyota Jidosha Kabushiki Kaisha JAM INFORMATION GENERATING DEVICE AND JAM INFORMATION GENERATING METHOD

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362678A (en) * 1990-06-05 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing insulated via hole structure for semiconductor device
US5346841A (en) * 1990-08-21 1994-09-13 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device using ion implantation
US5288650A (en) * 1991-01-25 1994-02-22 Ibis Technology Corporation Prenucleation process for simox device fabrication
WO1995018462A1 (en) * 1993-12-28 1995-07-06 Nippon Steel Corporation Method and device for manufacturing semiconductor substrate
US5918151A (en) * 1993-12-28 1999-06-29 Nippon Steel Corporation Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same
DE102016104274B4 (en) 2015-03-25 2021-12-16 Toyota Jidosha Kabushiki Kaisha JAM INFORMATION GENERATING DEVICE AND JAM INFORMATION GENERATING METHOD

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