JPS6437835A - Formation of layer of semiconductor device through ion implantation - Google Patents
Formation of layer of semiconductor device through ion implantationInfo
- Publication number
- JPS6437835A JPS6437835A JP19368087A JP19368087A JPS6437835A JP S6437835 A JPS6437835 A JP S6437835A JP 19368087 A JP19368087 A JP 19368087A JP 19368087 A JP19368087 A JP 19368087A JP S6437835 A JPS6437835 A JP S6437835A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ions
- concentration distribution
- energy
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To form an ion implanting layer in arbitrary concentration distribution in the depth direction of a substrate by varying the energy of implanting ion beams continuously or by stages. CONSTITUTION:An N epitaxial layer 2 is formed onto a P-type substrate 1, and a mask 4 for implanting ions is executed. O<+> ions are implanted so as to reach to the substrate 1 from the surface, thus shaping a pair of SiO2 layers 3. Beam energy is changed continuously or by stages at that time. The range of variation of beams is brought to approximately several keV-200keV, and beam currents are kept constant with the fluctuation of energy or beam currents are controlled, thus acquiring desired concentration distribution. According to the constitution, a region in which the concentration distribution of O<+> ions is kept constant is formed deeply up to the substrate 1, thus obtaining the SiO2 layers 3 for element isolation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19368087A JPS6437835A (en) | 1987-08-04 | 1987-08-04 | Formation of layer of semiconductor device through ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19368087A JPS6437835A (en) | 1987-08-04 | 1987-08-04 | Formation of layer of semiconductor device through ion implantation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437835A true JPS6437835A (en) | 1989-02-08 |
Family
ID=16312000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19368087A Pending JPS6437835A (en) | 1987-08-04 | 1987-08-04 | Formation of layer of semiconductor device through ion implantation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437835A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5288650A (en) * | 1991-01-25 | 1994-02-22 | Ibis Technology Corporation | Prenucleation process for simox device fabrication |
US5346841A (en) * | 1990-08-21 | 1994-09-13 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device using ion implantation |
US5362678A (en) * | 1990-06-05 | 1994-11-08 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing insulated via hole structure for semiconductor device |
WO1995018462A1 (en) * | 1993-12-28 | 1995-07-06 | Nippon Steel Corporation | Method and device for manufacturing semiconductor substrate |
DE102016104274B4 (en) | 2015-03-25 | 2021-12-16 | Toyota Jidosha Kabushiki Kaisha | JAM INFORMATION GENERATING DEVICE AND JAM INFORMATION GENERATING METHOD |
-
1987
- 1987-08-04 JP JP19368087A patent/JPS6437835A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5362678A (en) * | 1990-06-05 | 1994-11-08 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing insulated via hole structure for semiconductor device |
US5346841A (en) * | 1990-08-21 | 1994-09-13 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device using ion implantation |
US5288650A (en) * | 1991-01-25 | 1994-02-22 | Ibis Technology Corporation | Prenucleation process for simox device fabrication |
WO1995018462A1 (en) * | 1993-12-28 | 1995-07-06 | Nippon Steel Corporation | Method and device for manufacturing semiconductor substrate |
US5918151A (en) * | 1993-12-28 | 1999-06-29 | Nippon Steel Corporation | Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same |
DE102016104274B4 (en) | 2015-03-25 | 2021-12-16 | Toyota Jidosha Kabushiki Kaisha | JAM INFORMATION GENERATING DEVICE AND JAM INFORMATION GENERATING METHOD |
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