FR2649831B1 - Dispositif soi-mos presentant une structure de paroi laterale conductrice et procede pour sa fabrication - Google Patents
Dispositif soi-mos presentant une structure de paroi laterale conductrice et procede pour sa fabricationInfo
- Publication number
- FR2649831B1 FR2649831B1 FR909008962A FR9008962A FR2649831B1 FR 2649831 B1 FR2649831 B1 FR 2649831B1 FR 909008962 A FR909008962 A FR 909008962A FR 9008962 A FR9008962 A FR 9008962A FR 2649831 B1 FR2649831 B1 FR 2649831B1
- Authority
- FR
- France
- Prior art keywords
- soi
- production
- side wall
- wall structure
- mos device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18095289 | 1989-07-13 | ||
JP13300190A JPH03129777A (ja) | 1989-07-13 | 1990-05-23 | 電界効果型トランジスタを備えた半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2649831A1 FR2649831A1 (fr) | 1991-01-18 |
FR2649831B1 true FR2649831B1 (fr) | 1992-02-07 |
Family
ID=26467446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR909008962A Expired - Fee Related FR2649831B1 (fr) | 1989-07-13 | 1990-07-13 | Dispositif soi-mos presentant une structure de paroi laterale conductrice et procede pour sa fabrication |
Country Status (2)
Country | Link |
---|---|
US (1) | US5060035A (fr) |
FR (1) | FR2649831B1 (fr) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5449953A (en) * | 1990-09-14 | 1995-09-12 | Westinghouse Electric Corporation | Monolithic microwave integrated circuit on high resistivity silicon |
JP2635831B2 (ja) * | 1991-01-28 | 1997-07-30 | 株式会社東芝 | 半導体装置 |
US5434441A (en) * | 1992-01-31 | 1995-07-18 | Canon Kabushiki Kaisha | Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness |
JP3191061B2 (ja) * | 1992-01-31 | 2001-07-23 | キヤノン株式会社 | 半導体装置及び液晶表示装置 |
US5331116A (en) * | 1992-04-30 | 1994-07-19 | Sgs-Thomson Microelectronics, Inc. | Structure and method for forming contact structures in integrated circuits |
US5445107A (en) * | 1993-11-22 | 1995-08-29 | Motorola, Inc. | Semiconductor device and method of formation |
US5448513A (en) * | 1993-12-02 | 1995-09-05 | Regents Of The University Of California | Capacitorless DRAM device on silicon-on-insulator substrate |
JPH08125034A (ja) * | 1993-12-03 | 1996-05-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6232649B1 (en) | 1994-12-12 | 2001-05-15 | Hyundai Electronics America | Bipolar silicon-on-insulator structure and process |
FR2728390A1 (fr) * | 1994-12-19 | 1996-06-21 | Korea Electronics Telecomm | Procede de formation d'un transistor a film mince |
JP3171764B2 (ja) * | 1994-12-19 | 2001-06-04 | シャープ株式会社 | 半導体装置の製造方法 |
JP2748885B2 (ja) * | 1995-03-06 | 1998-05-13 | 日本電気株式会社 | 半導体集積回路装置 |
US5904535A (en) * | 1995-06-02 | 1999-05-18 | Hyundai Electronics America | Method of fabricating a bipolar integrated structure |
US6191484B1 (en) | 1995-07-28 | 2001-02-20 | Stmicroelectronics, Inc. | Method of forming planarized multilevel metallization in an integrated circuit |
JP3917185B2 (ja) | 1996-05-16 | 2007-05-23 | 日本特殊陶業株式会社 | 点火装置 |
EP0905789A4 (fr) * | 1996-06-14 | 1999-08-25 | Mitsubishi Electric Corp | Composant a semi-conducteurs ayant une structure silicium sur isolant et procede de fabrication de ce composant |
US6355955B1 (en) | 1998-05-14 | 2002-03-12 | Advanced Micro Devices, Inc. | Transistor and a method for forming the transistor with elevated and/or relatively shallow source/drain regions to achieve enhanced gate electrode formation |
JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6140171A (en) * | 1999-01-20 | 2000-10-31 | International Business Machines Corporation | FET device containing a conducting sidewall spacer for local interconnect and method for its fabrication |
US8187174B2 (en) * | 2007-01-22 | 2012-05-29 | Capso Vision, Inc. | Detection of when a capsule camera enters into or goes out of a human body and associated operations |
US7500392B1 (en) | 2007-10-11 | 2009-03-10 | Memsys, Inc. | Solid state microanemometer device and method of fabrication |
KR101802436B1 (ko) * | 2011-12-07 | 2017-11-29 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN103389443B (zh) * | 2012-05-07 | 2015-12-09 | 无锡华润上华科技有限公司 | 绝缘体上硅mos器件动态击穿电压的测试方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4054895A (en) * | 1976-12-27 | 1977-10-18 | Rca Corporation | Silicon-on-sapphire mesa transistor having doped edges |
JPS59181670A (ja) * | 1983-03-31 | 1984-10-16 | Toshiba Corp | Mos型半導体装置 |
JPS60180053A (ja) * | 1984-02-27 | 1985-09-13 | Hitachi Medical Corp | 電離箱形放射線検出器 |
JPS6113661A (ja) * | 1984-06-29 | 1986-01-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
JPS62298162A (ja) * | 1986-06-18 | 1987-12-25 | Nec Corp | Soi misトランジスタ |
US4753896A (en) * | 1986-11-21 | 1988-06-28 | Texas Instruments Incorporated | Sidewall channel stop process |
SE461490B (sv) * | 1987-08-24 | 1990-02-19 | Asea Ab | Mos-transistor utbildad paa ett isolerande underlag |
GB2211022B (en) * | 1987-10-09 | 1991-10-09 | Marconi Electronic Devices | A semiconductor device and a process for making the device |
-
1990
- 1990-07-10 US US07/550,584 patent/US5060035A/en not_active Expired - Lifetime
- 1990-07-13 FR FR909008962A patent/FR2649831B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2649831A1 (fr) | 1991-01-18 |
US5060035A (en) | 1991-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |
Effective date: 20080331 |