FR2578085B1 - Dispositif de memoire a semiconducteur - Google Patents

Dispositif de memoire a semiconducteur

Info

Publication number
FR2578085B1
FR2578085B1 FR8602651A FR8602651A FR2578085B1 FR 2578085 B1 FR2578085 B1 FR 2578085B1 FR 8602651 A FR8602651 A FR 8602651A FR 8602651 A FR8602651 A FR 8602651A FR 2578085 B1 FR2578085 B1 FR 2578085B1
Authority
FR
France
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8602651A
Other languages
English (en)
Other versions
FR2578085A1 (fr
Inventor
Tomohisa Wada
Hirofumi Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2578085A1 publication Critical patent/FR2578085A1/fr
Application granted granted Critical
Publication of FR2578085B1 publication Critical patent/FR2578085B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
FR8602651A 1985-02-26 1986-02-26 Dispositif de memoire a semiconducteur Expired - Fee Related FR2578085B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60039601A JPS61196498A (ja) 1985-02-26 1985-02-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
FR2578085A1 FR2578085A1 (fr) 1986-08-29
FR2578085B1 true FR2578085B1 (fr) 1992-10-30

Family

ID=12557629

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8602651A Expired - Fee Related FR2578085B1 (fr) 1985-02-26 1986-02-26 Dispositif de memoire a semiconducteur

Country Status (4)

Country Link
US (1) US4893282A (fr)
JP (1) JPS61196498A (fr)
DE (1) DE3603289A1 (fr)
FR (1) FR2578085B1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766665B2 (ja) * 1988-03-31 1995-07-19 株式会社東芝 半導体記憶装置
US5228003A (en) * 1988-04-15 1993-07-13 Seiko Epson Corporation Semiconductor memory
JPH0261894A (ja) * 1988-08-25 1990-03-01 Nec Ic Microcomput Syst Ltd 非同期式メモリ
JPH0289286A (ja) * 1988-09-27 1990-03-29 Seiko Epson Corp 半導体記憶装置
JPH0821849B2 (ja) * 1988-10-25 1996-03-04 富士通株式会社 半導体記憶装置
KR900015148A (ko) * 1989-03-09 1990-10-26 미다 가쓰시게 반도체장치
JPH04258885A (ja) * 1991-02-12 1992-09-14 Mitsubishi Electric Corp 半導体記憶装置
JP3118063B2 (ja) * 1992-03-23 2000-12-18 ローム株式会社 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、ならびに不揮発性記憶素子の製造方法
US5243575A (en) * 1992-06-19 1993-09-07 Intel Corporation Address transition detection to write state machine interface circuit for flash memory
US5301165A (en) * 1992-10-28 1994-04-05 International Business Machines Corporation Chip select speedup circuit for a memory
US5323360A (en) * 1993-05-03 1994-06-21 Motorola Inc. Localized ATD summation for a memory
WO1995002885A1 (fr) * 1993-07-13 1995-01-26 Seiko Epson Corporation Dispositif de memoire a semiconducteurs
US5418756A (en) * 1993-09-30 1995-05-23 Sgs-Thomson Microelectronics, Inc. Edge transition detection disable circuit to alter memory device operating characteristics
US5471157A (en) * 1994-03-31 1995-11-28 Sgs-Thomson Microelectronics, Inc. Integrated circuit with centralized control of edge transition detection pulse generation
US5590089A (en) * 1995-07-25 1996-12-31 Micron Quantum Devices Inc. Address transition detection (ATD) circuit
IT1294367B1 (it) * 1997-08-29 1999-03-24 Sgs Thomson Microelectronics Circuiteria atd immune nei confronti di impulsi spuri
JPH11126483A (ja) * 1997-10-20 1999-05-11 Fujitsu Ltd 省電力同期回路及びそれを有する半導体記憶装置
KR100295682B1 (ko) * 1999-04-07 2001-07-12 김영환 데이터 입력 버퍼 회로
KR100519533B1 (ko) * 2000-12-20 2005-10-05 주식회사 하이닉스반도체 독출 신호 발생기

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53117342A (en) * 1977-03-23 1978-10-13 Nec Corp Memory unit
JPS5570993A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Memory circuit
US4355377A (en) * 1980-06-30 1982-10-19 Inmos Corporation Asynchronously equillibrated and pre-charged static ram
IT1139929B (it) * 1981-02-06 1986-09-24 Rca Corp Circuito generatore di impulsi utilizzante una sorgente di corrente
US4405996A (en) * 1981-02-06 1983-09-20 Rca Corporation Precharge with power conservation
US4404474A (en) * 1981-02-06 1983-09-13 Rca Corporation Active load pulse generating circuit
US4408305A (en) * 1981-09-28 1983-10-04 Motorola, Inc. Memory with permanent array division capability
US4471240A (en) * 1982-08-19 1984-09-11 Motorola, Inc. Power-saving decoder for memories
JPS59221891A (ja) * 1983-05-31 1984-12-13 Toshiba Corp スタテイツク型半導体記憶装置
US4614883A (en) * 1983-12-01 1986-09-30 Motorola, Inc. Address transition pulse circuit
JPH117342A (ja) * 1997-06-16 1999-01-12 Fuji Xerox Co Ltd 複合機及びその節電制御方法

Also Published As

Publication number Publication date
JPS61196498A (ja) 1986-08-30
JPH0418399B2 (fr) 1992-03-27
DE3603289C2 (fr) 1990-04-26
DE3603289A1 (de) 1986-08-28
FR2578085A1 (fr) 1986-08-29
US4893282A (en) 1990-01-09

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse