FR2575865B1 - Dispositif semi-conducteur integre - Google Patents

Dispositif semi-conducteur integre

Info

Publication number
FR2575865B1
FR2575865B1 FR868600064A FR8600064A FR2575865B1 FR 2575865 B1 FR2575865 B1 FR 2575865B1 FR 868600064 A FR868600064 A FR 868600064A FR 8600064 A FR8600064 A FR 8600064A FR 2575865 B1 FR2575865 B1 FR 2575865B1
Authority
FR
France
Prior art keywords
semiconductor device
integrated semiconductor
integrated
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR868600064A
Other languages
English (en)
Other versions
FR2575865A1 (fr
Inventor
Flavio Villa
Bruno Murari
Franco Bertotti
Aldo Torazzina
Fabrizio Stefani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of FR2575865A1 publication Critical patent/FR2575865A1/fr
Application granted granted Critical
Publication of FR2575865B1 publication Critical patent/FR2575865B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/10—ROM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
FR868600064A 1985-01-08 1986-01-03 Dispositif semi-conducteur integre Expired - Lifetime FR2575865B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8519050A IT1215230B (it) 1985-01-08 1985-01-08 Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria

Publications (2)

Publication Number Publication Date
FR2575865A1 FR2575865A1 (fr) 1986-07-11
FR2575865B1 true FR2575865B1 (fr) 1991-05-03

Family

ID=11154125

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868600064A Expired - Lifetime FR2575865B1 (fr) 1985-01-08 1986-01-03 Dispositif semi-conducteur integre

Country Status (7)

Country Link
US (1) US4682197A (fr)
JP (1) JP2594783B2 (fr)
DE (1) DE3600207C2 (fr)
FR (1) FR2575865B1 (fr)
GB (1) GB2169447B (fr)
IT (1) IT1215230B (fr)
NL (1) NL193883C (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783690A (en) * 1983-09-06 1988-11-08 General Electric Company Power semiconductor device with main current section and emulation current section
IT1197307B (it) * 1986-09-30 1988-11-30 Sgs Microelettronica Spa Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
IT1226563B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche
IT1230895B (it) * 1989-06-22 1991-11-08 Sgs Thomson Microelectronics Transistore di potenza integrabile con ottimizzazione dei fenomeni di rottura secondaria diretta.
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
SE522892C2 (sv) * 1999-09-28 2004-03-16 Ericsson Telefon Ab L M En förstärkarkrets för att förstärka signaler
US6611172B1 (en) * 2001-06-25 2003-08-26 Sirenza Microdevices, Inc. Thermally distributed darlington amplifier
US6583663B1 (en) * 2002-04-22 2003-06-24 Power Integrations, Inc. Power integrated circuit with distributed gate driver

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
NL7405237A (nl) * 1974-04-18 1975-10-21 Philips Nv Parallelschakelen van halfgeleidersystemen.
JPS5165585A (fr) * 1974-12-04 1976-06-07 Hitachi Ltd
US4276516A (en) * 1979-07-26 1981-06-30 National Semiconductor Corporation Thermal stress reduction in IC power transistors
US4371792A (en) * 1980-07-24 1983-02-01 National Semiconductor Corporation High gain composite transistor
JPS57138174A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Semiconductor device
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.

Also Published As

Publication number Publication date
DE3600207A1 (de) 1986-08-21
GB8600052D0 (en) 1986-02-12
JPS61163656A (ja) 1986-07-24
GB2169447B (en) 1988-09-07
GB2169447A (en) 1986-07-09
US4682197A (en) 1987-07-21
NL8600005A (nl) 1986-08-01
JP2594783B2 (ja) 1997-03-26
DE3600207C2 (de) 2002-04-11
NL193883C (nl) 2001-01-03
NL193883B (nl) 2000-09-01
IT8519050A0 (it) 1985-01-08
IT1215230B (it) 1990-01-31
FR2575865A1 (fr) 1986-07-11

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse