DE3677543D1 - Ein supergitter enthaltende halbleitervorrichtung. - Google Patents

Ein supergitter enthaltende halbleitervorrichtung.

Info

Publication number
DE3677543D1
DE3677543D1 DE8686103408T DE3677543T DE3677543D1 DE 3677543 D1 DE3677543 D1 DE 3677543D1 DE 8686103408 T DE8686103408 T DE 8686103408T DE 3677543 T DE3677543 T DE 3677543T DE 3677543 D1 DE3677543 D1 DE 3677543D1
Authority
DE
Germany
Prior art keywords
supergitter
semiconductor device
device containing
semiconductor
containing supergitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686103408T
Other languages
English (en)
Inventor
Akira Ishibashi
Yoshifumi Mori
Masao Itabashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE3677543D1 publication Critical patent/DE3677543D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7376—Resonant tunnelling transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/16—Superlattice

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8686103408T 1985-03-15 1986-03-13 Ein supergitter enthaltende halbleitervorrichtung. Expired - Lifetime DE3677543D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60052973A JPS61210679A (ja) 1985-03-15 1985-03-15 半導体装置

Publications (1)

Publication Number Publication Date
DE3677543D1 true DE3677543D1 (de) 1991-03-28

Family

ID=12929834

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686103408T Expired - Lifetime DE3677543D1 (de) 1985-03-15 1986-03-13 Ein supergitter enthaltende halbleitervorrichtung.

Country Status (4)

Country Link
US (2) US4835579A (de)
EP (1) EP0201686B1 (de)
JP (1) JPS61210679A (de)
DE (1) DE3677543D1 (de)

Families Citing this family (156)

* Cited by examiner, † Cited by third party
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US10276625B1 (en) 2017-12-15 2019-04-30 Atomera Incorporated CMOS image sensor including superlattice to enhance infrared light absorption
US10529757B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated CMOS image sensor including pixels with read circuitry having a superlattice
US10361243B2 (en) 2017-12-15 2019-07-23 Atomera Incorporated Method for making CMOS image sensor including superlattice to enhance infrared light absorption
US10615209B2 (en) 2017-12-15 2020-04-07 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
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CN112005340A (zh) 2018-03-09 2020-11-27 阿托梅拉公司 包括化合物半导体材料和阻挡杂质和点缺陷的超晶格的半导体器件及方法
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US10468245B2 (en) 2018-03-09 2019-11-05 Atomera Incorporated Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
WO2019199926A1 (en) 2018-04-12 2019-10-17 Atomera Incorporated Device and method for making an inverted t channel field effect transistor (itfet) including a superlattice
EP3776073A1 (de) 2018-04-12 2021-02-17 Atomera Incorporated Halbleiterbauelement und verfahren mit vertikal integrierten optischen und elektronischen vorrichtungen und mit einem übergitter
US10566191B1 (en) 2018-08-30 2020-02-18 Atomera Incorporated Semiconductor device including superlattice structures with reduced defect densities
TWI720587B (zh) 2018-08-30 2021-03-01 美商安托梅拉公司 用於製作具較低缺陷密度超晶格結構之方法及元件
US10811498B2 (en) 2018-08-30 2020-10-20 Atomera Incorporated Method for making superlattice structures with reduced defect densities
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US10840335B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance
WO2020102283A1 (en) 2018-11-16 2020-05-22 Atomera Incorporated Finfet including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance and associated methods
US10580867B1 (en) 2018-11-16 2020-03-03 Atomera Incorporated FINFET including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance
US10854717B2 (en) 2018-11-16 2020-12-01 Atomera Incorporated Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance
US10818755B2 (en) 2018-11-16 2020-10-27 Atomera Incorporated Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
US10593761B1 (en) 2018-11-16 2020-03-17 Atomera Incorporated Method for making a semiconductor device having reduced contact resistance
US10580866B1 (en) 2018-11-16 2020-03-03 Atomera Incorporated Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
EP3871268A1 (de) 2018-11-16 2021-09-01 Atomera Incorporated Halbleiterbauelement einschliesslich supergittern zur blockierung der source/drain-dotierstoffdiffusion zur verringerung des kontaktwiderstands und zugehörige verfahren
US10847618B2 (en) 2018-11-16 2020-11-24 Atomera Incorporated Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance
US10840336B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
US10840337B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Method for making a FINFET having reduced contact resistance
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US10825902B1 (en) 2019-07-17 2020-11-03 Atomera Incorporated Varactor with hyper-abrupt junction region including spaced-apart superlattices
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US10879357B1 (en) 2019-07-17 2020-12-29 Atomera Incorporated Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice
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US11810784B2 (en) 2021-04-21 2023-11-07 Atomera Incorporated Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
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US4835579A (en) 1989-05-30
EP0201686A1 (de) 1986-11-20
JPS61210679A (ja) 1986-09-18
US4937204A (en) 1990-06-26

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