FR2625043B1 - Dispositif semi-conducteur - Google Patents
Dispositif semi-conducteurInfo
- Publication number
- FR2625043B1 FR2625043B1 FR8816560A FR8816560A FR2625043B1 FR 2625043 B1 FR2625043 B1 FR 2625043B1 FR 8816560 A FR8816560 A FR 8816560A FR 8816560 A FR8816560 A FR 8816560A FR 2625043 B1 FR2625043 B1 FR 2625043B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62322336A JP2617497B2 (ja) | 1987-12-18 | 1987-12-18 | 半導体装置 |
JP63100603A JPH0671078B2 (ja) | 1988-04-23 | 1988-04-23 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2625043A1 FR2625043A1 (fr) | 1989-06-23 |
FR2625043B1 true FR2625043B1 (fr) | 1994-02-18 |
Family
ID=26441599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8816560A Expired - Fee Related FR2625043B1 (fr) | 1987-12-18 | 1988-12-15 | Dispositif semi-conducteur |
Country Status (6)
Country | Link |
---|---|
US (1) | US5075751A (fr) |
KR (1) | KR910009035B1 (fr) |
AU (1) | AU595735B2 (fr) |
DE (1) | DE3842468C3 (fr) |
FR (1) | FR2625043B1 (fr) |
GB (1) | GB2213988B (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5182626A (en) * | 1989-09-20 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor and method of manufacturing the same |
JPH03171777A (ja) * | 1989-11-30 | 1991-07-25 | Toshiba Corp | 半導体装置 |
US5554883A (en) * | 1990-04-28 | 1996-09-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method therefor |
US5289031A (en) * | 1990-08-21 | 1994-02-22 | Kabushiki Kaisha Toshiba | Semiconductor device capable of blocking contaminants |
JPH0575110A (ja) * | 1991-09-13 | 1993-03-26 | Fuji Electric Co Ltd | 半導体装置 |
US5858864A (en) * | 1994-09-13 | 1999-01-12 | Lsi Logic Corporation | Process for making group IV semiconductor substrate treated with one or more group IV elements to form barrier region capable of inhibiting migration of dopant materials in substrate |
US5654210A (en) * | 1994-09-13 | 1997-08-05 | Lsi Logic Corporation | Process for making group IV semiconductor substrate treated with one or more group IV elements to form one or more barrier regions capable of inhibiting migration of dopant materials in substrate |
US5883403A (en) * | 1995-10-03 | 1999-03-16 | Hitachi, Ltd. | Power semiconductor device |
TW353833B (en) * | 1995-12-22 | 1999-03-01 | Motorola Inc | Wireless communication device having a reconfigurable matching circuit |
US6774407B2 (en) * | 1996-11-13 | 2004-08-10 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response |
JPH10270451A (ja) * | 1997-03-25 | 1998-10-09 | Rohm Co Ltd | 半導体装置およびその製造方法 |
WO1999007020A1 (fr) | 1997-07-30 | 1999-02-11 | Siemens Aktiengesellschaft | Thyristor a commande par gachette |
DE19732912C2 (de) * | 1997-07-30 | 2000-05-04 | Siemens Ag | Kaskoden-MOS-Thyristor |
AU5847599A (en) * | 1998-07-29 | 2000-02-21 | Infineon Technologies, Ag | Power semiconductor having a reduced reverse current |
US6828690B1 (en) * | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
DE69933681T2 (de) * | 1998-08-05 | 2007-08-23 | Memc Electronic Materials, Inc. | Ungleichmässige verteilung von minoritätsträger-lebensdauern in silizium-hochleistungsbauelementen |
EP1484789A1 (fr) * | 1998-08-05 | 2004-12-08 | MEMC Electronic Materials, Inc. | Répartition non uniforme de la durée de vie des porteurs minoritaires dans des dispositifs de puissance de haute performance au silicium |
WO2001066456A1 (fr) * | 2000-03-06 | 2001-09-13 | Jervis B. Webb Company | Dispositif de transport et de distribution d'articles |
FR2808922B1 (fr) * | 2000-05-11 | 2003-09-12 | Centre Nat Rech Scient | Capteur de tension d'anode d'un composant de puissance vertical et utilisation en protection de courts-circuits |
DE102005026408B3 (de) | 2005-06-08 | 2007-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone |
DE102006001252B4 (de) * | 2006-01-10 | 2012-01-26 | Infineon Technologies Ag | Bipolares Leistungshalbleiterbauelement mit einem p-Emitter und höher dotierten Zonen in dem p-Emitter und Herstellungsverfahren |
JP5358189B2 (ja) * | 2006-01-20 | 2013-12-04 | インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト | 酸素含有半導体ウェハの処理方法 |
JP2009283818A (ja) * | 2008-05-26 | 2009-12-03 | Sanken Electric Co Ltd | 半導体装置およびその製造方法 |
WO2012056536A1 (fr) | 2010-10-27 | 2012-05-03 | 富士電機株式会社 | Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur |
JP5505498B2 (ja) * | 2011-06-08 | 2014-05-28 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2016029685A (ja) * | 2014-07-25 | 2016-03-03 | 株式会社東芝 | 半導体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
DE2627855A1 (de) * | 1976-06-22 | 1977-12-29 | Siemens Ag | Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung |
US4224083A (en) * | 1978-07-31 | 1980-09-23 | Westinghouse Electric Corp. | Dynamic isolation of conductivity modulation states in integrated circuits |
US4278475A (en) * | 1979-01-04 | 1981-07-14 | Westinghouse Electric Corp. | Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation |
JPS55128870A (en) * | 1979-03-26 | 1980-10-06 | Semiconductor Res Found | Electrostatic induction thyristor and semiconductor device |
US4291329A (en) * | 1979-08-31 | 1981-09-22 | Westinghouse Electric Corp. | Thyristor with continuous recombination center shunt across planar emitter-base junction |
DE3068968D1 (en) * | 1979-11-16 | 1984-09-20 | Gen Electric | Asymmetrical field controlled thyristor |
US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
DE3117202A1 (de) * | 1981-04-30 | 1982-11-18 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum einstellen der lebensdauer der minoritaetsladungstraeger in halbleiterschaltern mit protonenstrahlen |
JPS60207376A (ja) * | 1984-03-31 | 1985-10-18 | Toyota Central Res & Dev Lab Inc | 高速静電誘導サイリスタおよびその製造方法 |
JPS62235782A (ja) * | 1986-04-07 | 1987-10-15 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
JPS6276556A (ja) * | 1985-09-28 | 1987-04-08 | Toyota Central Res & Dev Lab Inc | 高速静電誘導サイリスタ |
JP2604580B2 (ja) * | 1986-10-01 | 1997-04-30 | 三菱電機株式会社 | アノード短絡形ゲートターンオフサイリスタ |
JPS63205958A (ja) * | 1987-02-21 | 1988-08-25 | Matsushita Electric Works Ltd | 静電誘導サイリスタ |
JPH0671078B2 (ja) * | 1988-04-23 | 1994-09-07 | 松下電工株式会社 | 半導体装置 |
JPH0236570A (ja) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Works Ltd | 半導体装置 |
-
1988
- 1988-12-08 GB GB8828659A patent/GB2213988B/en not_active Expired - Lifetime
- 1988-12-09 AU AU26764/88A patent/AU595735B2/en not_active Ceased
- 1988-12-15 FR FR8816560A patent/FR2625043B1/fr not_active Expired - Fee Related
- 1988-12-16 DE DE3842468A patent/DE3842468C3/de not_active Expired - Fee Related
- 1988-12-19 KR KR1019880016970A patent/KR910009035B1/ko not_active IP Right Cessation
-
1990
- 1990-09-17 US US07/584,485 patent/US5075751A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB8828659D0 (en) | 1989-01-11 |
DE3842468C3 (de) | 1998-03-26 |
FR2625043A1 (fr) | 1989-06-23 |
DE3842468A1 (de) | 1989-06-29 |
DE3842468C2 (fr) | 1993-04-08 |
AU2676488A (en) | 1989-08-03 |
GB2213988A (en) | 1989-08-23 |
AU595735B2 (en) | 1990-04-05 |
KR890011109A (ko) | 1989-08-12 |
GB2213988B (en) | 1992-02-05 |
US5075751A (en) | 1991-12-24 |
KR910009035B1 (ko) | 1991-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |