ES2191716T3 - Un procedimiento de fabricacion de celulas solares de capa delgada. - Google Patents
Un procedimiento de fabricacion de celulas solares de capa delgada.Info
- Publication number
- ES2191716T3 ES2191716T3 ES95936166T ES95936166T ES2191716T3 ES 2191716 T3 ES2191716 T3 ES 2191716T3 ES 95936166 T ES95936166 T ES 95936166T ES 95936166 T ES95936166 T ES 95936166T ES 2191716 T3 ES2191716 T3 ES 2191716T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- solar cells
- delgada
- capa
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
SE PRESENTA UN METODO PARA MANUFACTURAR CELULAS SOLARES DE PELICULA FINA, EN EL QUE SE APLICA UNA CAPA DE SELENURO DE INDIO DE COBRE (CUINSE{SUB, 2}) (3) EN UN PASO DE MANUFACTURACION SOBRE UNA ESTRUCTURA QUE INCLUYE UNA CAPA DE METAL (2) QUE FORMA UN CONTACTO DE RESPALDO ELECTRICO EN LA CELULA SOLAR, ESTE CONTACTO DE RESPALDO SE APLICA A UN SUBSTRATO (1). LA INVENCION SE CARACTERIZA EN QUE LA CAPA (6) QUE CONTIENE METAL ALCALI SE FORMA LA ESTRUCTURA ANTES DE APLICAR LA CAPA DE CUINSE{SUB, 2} (3).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9403609A SE508676C2 (sv) | 1994-10-21 | 1994-10-21 | Förfarande för framställning av tunnfilmssolceller |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2191716T3 true ES2191716T3 (es) | 2003-09-16 |
Family
ID=20395698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES95936166T Expired - Lifetime ES2191716T3 (es) | 1994-10-21 | 1995-10-20 | Un procedimiento de fabricacion de celulas solares de capa delgada. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5994163A (es) |
EP (1) | EP0787354B1 (es) |
JP (1) | JP3690807B2 (es) |
AU (1) | AU3820595A (es) |
DE (1) | DE69529529T2 (es) |
ES (1) | ES2191716T3 (es) |
SE (1) | SE508676C2 (es) |
WO (1) | WO1996013063A1 (es) |
Families Citing this family (67)
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---|---|---|---|---|
DE4447866B4 (de) * | 1994-11-16 | 2005-05-25 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschichtsolarzelle |
JP3519543B2 (ja) * | 1995-06-08 | 2004-04-19 | 松下電器産業株式会社 | 半導体薄膜形成用前駆体及び半導体薄膜の製造方法 |
US7053294B2 (en) * | 2001-07-13 | 2006-05-30 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
WO2003007386A1 (en) * | 2001-07-13 | 2003-01-23 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
EP1475841A4 (en) * | 2002-02-14 | 2008-08-27 | Honda Motor Co Ltd | METHOD FOR PRODUCING A LIGHT ABSORPTION LAYER |
US20060057766A1 (en) * | 2003-07-08 | 2006-03-16 | Quanxi Jia | Method for preparation of semiconductive films |
SE525704C2 (sv) * | 2003-08-12 | 2005-04-05 | Sandvik Ab | Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller |
US20050056863A1 (en) * | 2003-09-17 | 2005-03-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell |
US8623448B2 (en) * | 2004-02-19 | 2014-01-07 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles |
US8372734B2 (en) | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
US7605328B2 (en) | 2004-02-19 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic thin-film cell produced from metallic blend using high-temperature printing |
US7306823B2 (en) * | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US8846141B1 (en) | 2004-02-19 | 2014-09-30 | Aeris Capital Sustainable Ip Ltd. | High-throughput printing of semiconductor precursor layer from microflake particles |
US7700464B2 (en) | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US7604843B1 (en) | 2005-03-16 | 2009-10-20 | Nanosolar, Inc. | Metallic dispersion |
US8309163B2 (en) * | 2004-02-19 | 2012-11-13 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
US8329501B1 (en) | 2004-02-19 | 2012-12-11 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles |
US20060060237A1 (en) * | 2004-09-18 | 2006-03-23 | Nanosolar, Inc. | Formation of solar cells on foil substrates |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US20090032108A1 (en) * | 2007-03-30 | 2009-02-05 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
US7838868B2 (en) | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
US7732229B2 (en) | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
US8541048B1 (en) | 2004-09-18 | 2013-09-24 | Nanosolar, Inc. | Formation of photovoltaic absorber layers on foil substrates |
US8927315B1 (en) | 2005-01-20 | 2015-01-06 | Aeris Capital Sustainable Ip Ltd. | High-throughput assembly of series interconnected solar cells |
US20080053516A1 (en) | 2006-08-30 | 2008-03-06 | Richard Allen Hayes | Solar cell modules comprising poly(allyl amine) and poly (vinyl amine)-primed polyester films |
US8197928B2 (en) | 2006-12-29 | 2012-06-12 | E. I. Du Pont De Nemours And Company | Intrusion resistant safety glazings and solar cell modules |
US8771419B2 (en) * | 2007-10-05 | 2014-07-08 | Solopower Systems, Inc. | Roll to roll evaporation tool for solar absorber precursor formation |
AT10578U1 (de) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht |
US8197885B2 (en) * | 2008-01-11 | 2012-06-12 | Climax Engineered Materials, Llc | Methods for producing sodium/molybdenum power compacts |
BRPI0907078A2 (pt) * | 2008-03-26 | 2015-07-07 | Du Pont | "artigo laminado" |
CN102832281A (zh) * | 2008-04-04 | 2012-12-19 | 纳幕尔杜邦公司 | 包含高熔体流动速率的聚(乙烯醇缩丁醛)包封材料的太阳能电池模块 |
JP4384237B2 (ja) * | 2008-05-19 | 2009-12-16 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の製造方法 |
US20090288701A1 (en) * | 2008-05-23 | 2009-11-26 | E.I.Du Pont De Nemours And Company | Solar cell laminates having colored multi-layer encapsulant sheets |
WO2009149000A2 (en) | 2008-06-02 | 2009-12-10 | E. I. Du Pont De Nemours And Company | Solar cell module having a low haze encapsulant layer |
EP2351094A2 (en) | 2008-07-17 | 2011-08-03 | Uriel Solar Inc. | High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation |
US20100101647A1 (en) * | 2008-10-24 | 2010-04-29 | E.I. Du Pont De Nemours And Company | Non-autoclave lamination process for manufacturing solar cell modules |
CN102333786B (zh) | 2008-10-31 | 2014-12-17 | 纳幕尔杜邦公司 | 包含低雾度包封材料的太阳能电池模块 |
US8080727B2 (en) | 2008-11-24 | 2011-12-20 | E. I. Du Pont De Nemours And Company | Solar cell modules comprising an encapsulant sheet of a blend of ethylene copolymers |
US8084129B2 (en) * | 2008-11-24 | 2011-12-27 | E. I. Du Pont De Nemours And Company | Laminated articles comprising a sheet of a blend of ethylene copolymers |
US20100154867A1 (en) * | 2008-12-19 | 2010-06-24 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
US8399081B2 (en) * | 2008-12-31 | 2013-03-19 | E I Du Pont De Nemours And Company | Solar cell modules comprising encapsulant sheets with low haze and high moisture resistance |
KR20110122121A (ko) * | 2009-01-22 | 2011-11-09 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 태양 전지 모듈에 대한 킬레이트제를 포함하는 폴리(비닐 부티랄) 밀봉제 |
JP5229901B2 (ja) * | 2009-03-09 | 2013-07-03 | 富士フイルム株式会社 | 光電変換素子、及び太陽電池 |
US8709856B2 (en) * | 2009-03-09 | 2014-04-29 | Zetta Research and Development LLC—AQT Series | Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques |
JP4629151B2 (ja) * | 2009-03-10 | 2011-02-09 | 富士フイルム株式会社 | 光電変換素子及び太陽電池、光電変換素子の製造方法 |
US7785921B1 (en) * | 2009-04-13 | 2010-08-31 | Miasole | Barrier for doped molybdenum targets |
US8247243B2 (en) | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
US9284639B2 (en) * | 2009-07-30 | 2016-03-15 | Apollo Precision Kunming Yuanhong Limited | Method for alkali doping of thin film photovoltaic materials |
US8609777B2 (en) * | 2009-07-31 | 2013-12-17 | E I Du Pont De Nemours And Company | Cross-linkable encapsulants for photovoltaic cells |
KR101306913B1 (ko) * | 2009-09-02 | 2013-09-10 | 한국전자통신연구원 | 태양 전지 |
US20110162696A1 (en) * | 2010-01-05 | 2011-07-07 | Miasole | Photovoltaic materials with controllable zinc and sodium content and method of making thereof |
US20110203655A1 (en) * | 2010-02-22 | 2011-08-25 | First Solar, Inc. | Photovoltaic device protection layer |
DE102010017246A1 (de) * | 2010-06-04 | 2011-12-08 | Solibro Gmbh | Solarzellenmodul und Herstellungsverfahren hierfür |
US8609980B2 (en) | 2010-07-30 | 2013-12-17 | E I Du Pont De Nemours And Company | Cross-linkable ionomeric encapsulants for photovoltaic cells |
TWI538235B (zh) | 2011-04-19 | 2016-06-11 | 弗里松股份有限公司 | 薄膜光伏打裝置及製造方法 |
US20130000702A1 (en) * | 2011-06-30 | 2013-01-03 | Miasole | Photovoltaic device with resistive cigs layer at the back contact |
US10125205B2 (en) | 2012-12-19 | 2018-11-13 | E. I. Du Pont De Nemours And Company | Cross-linkable acid copolymer composition and its use in glass laminates |
WO2014097112A1 (en) | 2012-12-21 | 2014-06-26 | Flisom Ag | Fabricating thin-film optoelectronic devices with added potassium |
WO2015095607A1 (en) * | 2013-12-20 | 2015-06-25 | Uriel Solar, Inc. | Multi-junction photovoltaic cells |
WO2015171575A1 (en) | 2014-05-09 | 2015-11-12 | E. I. Du Pont De Nemours And Company | Encapsulant composition comprising a copolymer of ethylene, vinyl acetate and a third comonomer |
TWI677105B (zh) | 2014-05-23 | 2019-11-11 | 瑞士商弗里松股份有限公司 | 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置 |
TWI661991B (zh) | 2014-09-18 | 2019-06-11 | 瑞士商弗里松股份有限公司 | 用於製造薄膜裝置之自組裝圖案化 |
EP3245312A1 (en) | 2015-01-12 | 2017-11-22 | Nuvosun, Inc. | High rate sputter deposition of alkali metal-containing precursor films useful to fabricate chalcogenide semiconductors |
HUE053005T2 (hu) | 2016-02-11 | 2021-06-28 | Flisom Ag | Vékonyréteg optoelektronikai eszközök gyártása hozzáadott rubídiummal és/vagy céziummal |
WO2017137271A1 (en) | 2016-02-11 | 2017-08-17 | Flisom Ag | Self-Assembly Patterning for Fabricating Thin-Film Devices |
WO2017147037A1 (en) | 2016-02-26 | 2017-08-31 | Dow Global Technologies Llc | Method for improving stability of photovoltaic articles incorporating chalcogenide semiconductors |
CN112055894A (zh) | 2018-03-08 | 2020-12-08 | 性能材料北美股份有限公司 | 具有改进的抗电势诱导衰减的光伏模块和密封剂组合物 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4623601A (en) * | 1985-06-04 | 1986-11-18 | Atlantic Richfield Company | Photoconductive device containing zinc oxide transparent conductive layer |
US4915745A (en) * | 1988-09-22 | 1990-04-10 | Atlantic Richfield Company | Thin film solar cell and method of making |
US4873118A (en) * | 1988-11-18 | 1989-10-10 | Atlantic Richfield Company | Oxygen glow treating of ZnO electrode for thin film silicon solar cell |
US5028274A (en) * | 1989-06-07 | 1991-07-02 | International Solar Electric Technology, Inc. | Group I-III-VI2 semiconductor films for solar cell application |
DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
-
1994
- 1994-10-21 SE SE9403609A patent/SE508676C2/sv not_active IP Right Cessation
-
1995
- 1995-10-20 WO PCT/SE1995/001242 patent/WO1996013063A1/en active IP Right Grant
- 1995-10-20 AU AU38205/95A patent/AU3820595A/en not_active Abandoned
- 1995-10-20 EP EP95936166A patent/EP0787354B1/en not_active Expired - Lifetime
- 1995-10-20 ES ES95936166T patent/ES2191716T3/es not_active Expired - Lifetime
- 1995-10-20 JP JP51383596A patent/JP3690807B2/ja not_active Expired - Lifetime
- 1995-10-20 US US08/817,693 patent/US5994163A/en not_active Expired - Lifetime
- 1995-10-20 DE DE69529529T patent/DE69529529T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3690807B2 (ja) | 2005-08-31 |
SE9403609L (sv) | 1996-04-22 |
US5994163A (en) | 1999-11-30 |
EP0787354A1 (en) | 1997-08-06 |
JPH10512096A (ja) | 1998-11-17 |
AU3820595A (en) | 1996-05-15 |
SE9403609D0 (sv) | 1994-10-21 |
EP0787354B1 (en) | 2003-01-29 |
DE69529529T2 (de) | 2003-12-11 |
DE69529529D1 (de) | 2003-03-06 |
WO1996013063A1 (en) | 1996-05-02 |
SE508676C2 (sv) | 1998-10-26 |
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