JP3690807B2 - 薄膜太陽電池の製法 - Google Patents

薄膜太陽電池の製法 Download PDF

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JP3690807B2
JP3690807B2 JP51383596A JP51383596A JP3690807B2 JP 3690807 B2 JP3690807 B2 JP 3690807B2 JP 51383596 A JP51383596 A JP 51383596A JP 51383596 A JP51383596 A JP 51383596A JP 3690807 B2 JP3690807 B2 JP 3690807B2
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ボデガルド，マリカ
ヘドストロム，ヨナス
ストルト，ラルス
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ノルディック ソーラー エナジイ アクチボラゲット
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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Description

本発明は薄膜太陽電池の製法に関する。
ＣｕＩｎＳｅ2（セレン化銅インジウム）薄膜太陽電池は通常モリブデン（Ｍｏ）バック接点を基体、例えばガラス基体上に付着させて製造する。次いで、銅と、インジウムと、セレン化物とをバック接点（back contact）上に付着させてＣｕＩｎＳｅ2層を形成する。このＣｕＩｎＳｅ2はセレン含有雰囲気内での化学反応で生成する。この製造段階でこの構造体は３５０°〜６００℃の範囲の温度にさらされる。
このＣｕＩｎＳｅ2層はｐ型半導体である。ｎ型半導体をこのＣｕＩｎＳｅ2層上に付着させてｐｎ接合を形成し、事実上の太陽電池が形成される。ｎ型半導体はＣａＳの薄い層とＺｎＯの厚い層から成ることが一番多い。このＺｎＯ層は同時に前面接点となる。
この種の太陽電池は効率を向上させることが望ましい。
本発明は太陽電池の製法を提供し、太陽電池製品の効率を大きく向上させる。
従って、本発明は太陽電池内に電気的バック接点をなす金属層を含む構造体に１つの製造段階でセレン化銅インジウム（ＣｕＩｎＳｅ2）の層を被覆し、上記バック接点を基体に被覆した薄膜太陽電池の製法に関し、ＣｕＩｎＳｅ2層の被覆前に構造体をアルカリ金属層で被覆することを特徴とする。
本発明の特に好ましい態様では、ＣｕＩｎＳｅ2層被覆前に構造体に被覆するアルカリ金属はナトリウム（Ｎａ）又はカリウム（Ｋ）である。
本明細書と請求項で用いた「セレン化銅インジウム層」は各種合金物質、主にガリウムと硫黄とを含有する各種組成のセレン化銅インジウムを意味する。ここで使用する用語「セレン化銅インジウム」は主にＣｕＩｎＳｅ2、ＣｕＩｎxＧａ1-xＳｅx、ＣｕＩｎxＧａ1-xＳyＳｅ2-yの化合物に関する。
本発明を式ＣｕＩｎＳｅ2のセレン化銅インジウム層について以下説明する。
太陽電池を示す単一図である添付図面に図示の本発明の例示態様を部分的に参照しながら本発明を詳述する。
本発明はＣｕＩｎＳｅ2層を形成させる面、例えばモリブデン層に単体カリウム又はナトリウム又はこれらの基本的物質が存在する化合物の形で単体ナトリウム又はカリウムを被覆するときは、多結晶性ＣｕＩｎＳｅ2膜中の粒子は柱状構造で配向することが多い。又、これらの粒子は寸法が一層大きく、その構造はより緻密である。又、ＣｕＩｎＳｅ2層の抵抗率は低下する。これはより効果的なｐドーピングが得られること、これにより電池電圧が高くなることを意味する。
ナトリウムとカリウム以外のアルカリ金属も同一の効果を与える。少くとも原子量が低いリチウムが該当する。
図１は薄膜太陽電池の概略断面図である。薄膜太陽電池がその上に形成される基体は寸法が大きく、例えば１×０．４ｍの大きさである。基体表面は電気的に互に接続された多数の電池を担持する。図１はかかる１つの電池の部分を示すもので、基体上に多数の独立した、但し電気的に接続した電池を形成することは技術的に公知であり、本明細書では詳述しない。
本発明が適用される太陽電池は次のようにして構成する。基体１は通常適切な厚さ、例えば２．０ｍｍの厚さのガラスシートの形状である、はじめに、モリブデン（Ｍｏ）層２をこのガラスシート上にスパッターして付着させる。このモリブデン層はバック接点となり、最終電池の正端子となる。モリブデン層の厚さは１，０００ｎｍである。次いで、ＣｕＩｎＳｅ2層３を被覆し、これは厚さが例えば２，５００ｎｍである。この層３に硫化カドミウム（ＣａＳ）層４を被覆し、これは厚さが例えば５０ｎｍであり、次いで透明なドーピング処理した酸化亜鉛（ＺｎＯ）層５の形で電気接点層を被覆する、この層厚は例えば５００ｎｍである。
太陽光が電池に当ると、電圧が負の端子である電気接点５（ＺｎＯ）と電気的バック接点２との間に生ずる。
１例としてナトリウムを用いたものについて本発明を以下に説明するが、他のアルカリ金属も使用することができ、同等の効果が得られる。図示の太陽電池の層６はナトリウムであるが、ナトリウム以外のアルカリ金属を用いるときは、この層６はかかるアルカリ金属からなる。
本発明ではアルカリ金属（この場合ナトリウム（Ｎａ）である）を含有する層６はＣｕＩｎＳｅ2層３被覆前に金属層２の表面に即ち例示の実施例ではモリブデン層であるが、この表面に形成する。
本発明の１つの好ましい態様ではナトリウムを電気的バック接点即ち金属層の上にセレン化ナトリウム（Ｎａ2Ｓｅ）を蒸着させて被覆する。
本発明の別の好ましい態様では、カリウムをバック接点即ち金属層の上にセレン化カリウム（Ｋ2Ｓｅ）を蒸着させて被覆する。
別の好ましい態様では、電気的バック接点がモリブデンから成るとき、アルカリ金属（この場合ナトリウム）をこの電気的バック接点と同時に被覆する。
本発明の別の好ましい態様ではアルカリ金属（この場合ナトリウム）を含む層は５０〜５００ｎｍの厚さに被覆する。
別の態様では、この層は酸素（Ｏ）をも含有する。
ＣｕＩｎＳｅ2層をナトリウム又はカリウム含有層の表面上に被覆したときは、ナトリウム又はカリウムは金属接点の表面から本質的に消失することが判った。ＣｕＩｎＳｅ2層を被覆したときは、ナトリウム又はカリウムはＣｕＩｎＳｅ2層内の粒界とこの層の表面上に再び見出される。次いでＣａＳ層を湿式法で被覆するときはこのナトリウム又はカリウム化合物はこの湿式法で用いる液に可溶性のときはこのナトリウム又はカリウム化合物はその表面から消失する。
本方法により、実施例として説明し図示した太陽電池の効率が極めて驚異的に即ち約２５％向上する。本発明を適用しなかったこの種の太陽電池の典型的な効率は１２％である。本発明を適用したとき、この効率は１５％に向上する。
本発明と特定の太陽電池構造体について記載してきたが、本発明は電気的バック接点がモリブデンでなく、いくつかのその他の適切な金属、例えばタングステン、ニッケル、チタン又はクロムから成るその他の構造体に適用できる。
更に、ナトリウム含有ガラス以外の基体も使用できる。例えばナトリウムを含有しないガラスが使用でき、ナトリウムを含有し電気的バック接点を形成する表面上に抗ナトリウム拡散障壁を有するガラスも使用できる。
本発明は以下の請求の範囲内で改変が可能であり、従って本発明は上記の本発明の例示態様に限定されるものではない。

Claims (6)

  1. 太陽電池の電気的バック接点をなす金属層（２）を含む構造体にセレン化銅インジウム（ＣｕＩｎＳｅ2）（３）を１回の製造工程で被覆し、このバック接点が基体（１）上に被覆されている薄膜太陽電池の製法において、
    ＣｕＩｎＳｅ2層（３）を被覆する前にナトリウム又はカリウムの層（６）を電気的バック接点上に形成することを特徴とする、上記製法。
  2. バック接点がモリブデンから成るときスパッターリングでナトリウム又はカリウムをバック接点と同時に被覆する、請求項１に記載の製法。
  3. ナトリウム又はカリウムの層は厚さ５０〜５００ｎｍに被覆する、請求項１又は２に記載の製法。
  4. ナトリウム又はカリウムの層が酸素（Ｏ）をも含有する、請求項１〜３のいずれか１項に記載の製法。
  5. バック接点がモリブデン（Ｍｏ）から成る、請求項１〜４のいずれか１項に記載の製法。
  6. セレン化銅インジウム層表面上に硫化カドミウム（ＣｄＳ）を被覆し、硫化カドミウム層の表面上に電気的接点層を被覆し、この電気的接点層は好ましくはドープした酸化亜鉛（ＺｎＯ）の層である、請求項１〜５のいずれか１項に記載の製法。
JP51383596A 1994-10-21 1995-10-20 薄膜太陽電池の製法 Expired - Lifetime JP3690807B2 (ja)

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SE9403609A SE508676C2 (sv) 1994-10-21 1994-10-21 Förfarande för framställning av tunnfilmssolceller
SE9403609-2 1994-10-21
PCT/SE1995/001242 WO1996013063A1 (en) 1994-10-21 1995-10-20 A method of manufacturing thin-film solar cells

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