MX168214B - PILA SOLAR QUE CONTIENE UNA PELICULA DE Hgl-xCdxTe RICO EN Cd Y METODO PARA HACERLA - Google Patents
PILA SOLAR QUE CONTIENE UNA PELICULA DE Hgl-xCdxTe RICO EN Cd Y METODO PARA HACERLAInfo
- Publication number
- MX168214B MX168214B MX204224A MX20422485A MX168214B MX 168214 B MX168214 B MX 168214B MX 204224 A MX204224 A MX 204224A MX 20422485 A MX20422485 A MX 20422485A MX 168214 B MX168214 B MX 168214B
- Authority
- MX
- Mexico
- Prior art keywords
- xcdxte
- ions
- film
- molar
- acid
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 abstract 5
- 239000002253 acid Substances 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 2
- -1 halide ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052714 tellurium Inorganic materials 0.000 abstract 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02474—Sulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Sampling And Sample Adjustment (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
La presente invención se refiere a un método para hacer una pila solar que contiene una película de Hg1-xCdxTe sobre un substrato conductor con una estequiometría de Hg controlada utilizando un baño de deposición con un electrodo de referencia, el substrato conductor a manera de cátodo y uno más ánodos; cuando menos uno de los ánodos comprende telurio, caracterizado porque comprende los pasos de: a) proporcionar un electrolito que contiene de 0.1 molar a 1.5 molar de iones Cd2+, 10-5 molar a 10-3 molar de iones HTeO2 + e iones Hg2+ en una concentración seleccionada entre alrededor de 1 a 20 ppm; iones haluro y un ácido para ajustar el pH de dicho electrolito a entre 1 y 3; la proporción molar de iones haluro a iones derivados del ácido está entre 0.01 a 0.06; b) ajustar el potencial aplicado entre la referencia y el cátodo y la concentración de iones Hg2+ en la solución de tal manera que se forme un compuesto de Hg1-xCdxTe con estequiometría controlada, sobre la superficie del cátodo; c) recoger la película de Hg1-xCdxTe a una temperatura aproximada de 400 grados C para formar una capa rectificadora en la interfase de la película de Hg1-xCdxTe con la película de CdS; d) grabar químicamente la superficie de la película de Hg1-xCdxTe con una solución de ácido para formar una superficie rica en telurio; e) tratar la superficie de la película grabada por ácido, con una solución fuerte; y f) depositar sobre dicha superficie grabada químicamente y tratada, una capa metálica conductora.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/576,559 US4548681A (en) | 1984-02-03 | 1984-02-03 | Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te |
Publications (1)
Publication Number | Publication Date |
---|---|
MX168214B true MX168214B (es) | 1993-05-12 |
Family
ID=24304933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX204224A MX168214B (es) | 1984-02-03 | 1985-02-01 | PILA SOLAR QUE CONTIENE UNA PELICULA DE Hgl-xCdxTe RICO EN Cd Y METODO PARA HACERLA |
Country Status (15)
Country | Link |
---|---|
US (2) | US4548681A (es) |
EP (1) | EP0152197B1 (es) |
JP (1) | JPH0685444B2 (es) |
AU (2) | AU577343B2 (es) |
BR (1) | BR8500445A (es) |
CA (1) | CA1249361A (es) |
DE (1) | DE3575049D1 (es) |
ES (1) | ES8702518A1 (es) |
HK (1) | HK63190A (es) |
IL (1) | IL74197A (es) |
IN (1) | IN167111B (es) |
MX (1) | MX168214B (es) |
NO (1) | NO850389L (es) |
SG (1) | SG20390G (es) |
ZA (1) | ZA85546B (es) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4909857A (en) * | 1986-05-06 | 1990-03-20 | Standard Oil Company | Electrodeposited doped II-VI semiconductor films and devices incorporating such films |
IN167516B (es) * | 1986-05-06 | 1990-11-10 | Standard Oil Co Ohio | |
US4816120A (en) * | 1986-05-06 | 1989-03-28 | The Standard Oil Company | Electrodeposited doped II-VI semiconductor films and devices incorporating such films |
EP0248953A1 (en) * | 1986-06-10 | 1987-12-16 | The Standard Oil Company | Tandem photovoltaic devices |
US4686323A (en) * | 1986-06-30 | 1987-08-11 | The Standard Oil Company | Multiple cell, two terminal photovoltaic device employing conductively adhered cells |
US4873198A (en) * | 1986-10-21 | 1989-10-10 | Ametek, Inc. | Method of making photovoltaic cell with chloride dip |
US4753684A (en) * | 1986-10-31 | 1988-06-28 | The Standard Oil Company | Photovoltaic heterojunction structures |
US4764261A (en) * | 1986-10-31 | 1988-08-16 | Stemcor Corporation | Method of making improved photovoltaic heterojunction structures |
US4735662A (en) * | 1987-01-06 | 1988-04-05 | The Standard Oil Company | Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
US4950615A (en) * | 1989-02-06 | 1990-08-21 | International Solar Electric Technology, Inc. | Method and making group IIB metal - telluride films and solar cells |
GB9022828D0 (en) * | 1990-10-19 | 1990-12-05 | Bp Solar Ltd | Electrochemical process |
EP0552023B1 (en) * | 1992-01-14 | 1997-04-02 | Mitsubishi Chemical Corporation | Electrode structure for semiconductor device |
GB2384621B (en) * | 2002-01-29 | 2004-07-07 | Univ Sheffield Hallam | Thin film photovoltaic devices and methods of making the same |
US8101039B2 (en) * | 2008-04-10 | 2012-01-24 | Cardinal Ig Company | Manufacturing of photovoltaic subassemblies |
US20090255570A1 (en) * | 2008-04-10 | 2009-10-15 | Cardinal Solar Technologies Company | Glazing assemblies that incorporate photovoltaic elements and related methods of manufacture |
US20090320921A1 (en) * | 2008-02-01 | 2009-12-31 | Grommesh Robert C | Photovoltaic Glazing Assembly and Method |
US20090194147A1 (en) * | 2008-02-01 | 2009-08-06 | Cardinal Ig Company | Dual seal photovoltaic assembly and method |
US20090194156A1 (en) * | 2008-02-01 | 2009-08-06 | Grommesh Robert C | Dual seal photovoltaic glazing assembly and method |
GB0916589D0 (en) * | 2009-09-22 | 2009-10-28 | Qinetiq Ltd | Improved photocell |
US20120043215A1 (en) * | 2010-08-17 | 2012-02-23 | EncoreSolar, Inc. | Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing |
US20170167042A1 (en) * | 2015-12-14 | 2017-06-15 | International Business Machines Corporation | Selective solder plating |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3496024A (en) * | 1961-10-09 | 1970-02-17 | Monsanto Co | Photovoltaic cell with a graded energy gap |
US3723190A (en) * | 1968-10-09 | 1973-03-27 | Honeywell Inc | Process for preparing mercury cadmium telluride |
US4400244A (en) * | 1976-06-08 | 1983-08-23 | Monosolar, Inc. | Photo-voltaic power generating means and methods |
GB1532616A (en) * | 1976-06-08 | 1978-11-15 | Monsolar Inc | Photo-voltaic power generating means and methods |
JPS5313382A (en) * | 1976-07-22 | 1978-02-06 | Agency Of Ind Science & Technol | Manufacture of thin-film light electromotive element |
GB2006268A (en) * | 1977-10-14 | 1979-05-02 | Univ Queensland | Preparation of semiconductor films on electrically conductive substrates |
US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
US4243885A (en) * | 1979-09-25 | 1981-01-06 | The United States Of America As Represented By The United States Department Of Energy | Cadmium telluride photovoltaic radiation detector |
US4319069A (en) * | 1980-07-25 | 1982-03-09 | Eastman Kodak Company | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
-
1984
- 1984-02-03 US US06/576,559 patent/US4548681A/en not_active Expired - Lifetime
-
1985
- 1985-01-15 AU AU37683/85A patent/AU577343B2/en not_active Expired
- 1985-01-21 CA CA000472470A patent/CA1249361A/en not_active Expired
- 1985-01-23 DE DE8585300435T patent/DE3575049D1/de not_active Expired - Lifetime
- 1985-01-23 ZA ZA85546A patent/ZA85546B/xx unknown
- 1985-01-23 EP EP85300435A patent/EP0152197B1/en not_active Expired
- 1985-01-30 JP JP60016364A patent/JPH0685444B2/ja not_active Expired - Fee Related
- 1985-01-30 IL IL74197A patent/IL74197A/xx unknown
- 1985-01-31 BR BR8500445A patent/BR8500445A/pt not_active IP Right Cessation
- 1985-02-01 NO NO850389A patent/NO850389L/no unknown
- 1985-02-01 MX MX204224A patent/MX168214B/es unknown
- 1985-02-01 ES ES540082A patent/ES8702518A1/es not_active Expired
- 1985-02-12 IN IN112/DEL/85A patent/IN167111B/en unknown
- 1985-09-17 US US06/762,474 patent/US4629820A/en not_active Expired - Lifetime
-
1988
- 1988-12-06 AU AU26607/88A patent/AU592938B2/en not_active Expired
-
1990
- 1990-03-13 SG SG203/90A patent/SG20390G/en unknown
- 1990-08-16 HK HK631/90A patent/HK63190A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU2660788A (en) | 1989-04-13 |
SG20390G (en) | 1990-07-06 |
JPH0685444B2 (ja) | 1994-10-26 |
EP0152197A3 (en) | 1986-04-02 |
AU592938B2 (en) | 1990-01-25 |
IL74197A0 (en) | 1985-04-30 |
BR8500445A (pt) | 1985-09-17 |
ES540082A0 (es) | 1986-12-16 |
US4629820A (en) | 1986-12-16 |
HK63190A (en) | 1990-08-24 |
US4548681A (en) | 1985-10-22 |
ES8702518A1 (es) | 1986-12-16 |
JPS60239070A (ja) | 1985-11-27 |
IL74197A (en) | 1988-03-31 |
DE3575049D1 (de) | 1990-02-01 |
AU3768385A (en) | 1985-08-08 |
CA1249361A (en) | 1989-01-24 |
EP0152197B1 (en) | 1989-12-27 |
ZA85546B (en) | 1986-04-30 |
NO850389L (no) | 1985-08-05 |
IN167111B (es) | 1990-09-01 |
EP0152197A2 (en) | 1985-08-21 |
AU577343B2 (en) | 1988-09-22 |
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