DE69838453D1 - Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren - Google Patents

Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren

Info

Publication number
DE69838453D1
DE69838453D1 DE69838453T DE69838453T DE69838453D1 DE 69838453 D1 DE69838453 D1 DE 69838453D1 DE 69838453 T DE69838453 T DE 69838453T DE 69838453 T DE69838453 T DE 69838453T DE 69838453 D1 DE69838453 D1 DE 69838453D1
Authority
DE
Germany
Prior art keywords
mos
gate
manufacturing process
power component
high voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69838453T
Other languages
English (en)
Inventor
Ferruccio Frisini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69838453D1 publication Critical patent/DE69838453D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69838453T 1998-12-09 1998-12-09 Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren Expired - Lifetime DE69838453D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98830737A EP1009036B1 (de) 1998-12-09 1998-12-09 Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren

Publications (1)

Publication Number Publication Date
DE69838453D1 true DE69838453D1 (de) 2007-10-31

Family

ID=8236909

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69838453T Expired - Lifetime DE69838453D1 (de) 1998-12-09 1998-12-09 Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren

Country Status (4)

Country Link
US (2) US6586798B1 (de)
EP (1) EP1009036B1 (de)
JP (1) JP4861544B2 (de)
DE (1) DE69838453D1 (de)

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DE10052170C2 (de) * 2000-10-20 2002-10-31 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement
EP1267415A3 (de) * 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Leistungshalbleiterbauelement mit RESURF-Schicht
DE10132136C1 (de) * 2001-07-03 2003-02-13 Infineon Technologies Ag Halbleiterbauelement mit Ladungskompensationsstruktur sowie zugehöriges Herstellungsverfahren
CN1331238C (zh) 2001-09-19 2007-08-08 株式会社东芝 半导体装置及其制造方法
US6521954B1 (en) 2001-12-21 2003-02-18 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US6969657B2 (en) * 2003-03-25 2005-11-29 International Rectifier Corporation Superjunction device and method of manufacture therefor
EP1696490A1 (de) * 2005-02-25 2006-08-30 STMicroelectronics S.r.l. Ladungskompensationshalbleiterbauelement und dazugehoriges Herstellungsverfahren
EP1710843B1 (de) * 2005-04-04 2012-09-19 STMicroelectronics Srl Integriertes Leistungsbauelement
JP2007012858A (ja) * 2005-06-30 2007-01-18 Toshiba Corp 半導体素子及びその製造方法
EP1742249A1 (de) * 2005-07-08 2007-01-10 STMicroelectronics S.r.l. Leistungsfeldeffekttransistor und Verfahren zu seiner Herstellung
EP1742259A1 (de) * 2005-07-08 2007-01-10 STMicroelectronics S.r.l. Halbleiter-Leistungsbauelement mit Mehrfach-Drain-Struktur und entsprechendes Herstellungsverfahren
WO2007116420A1 (en) 2006-04-11 2007-10-18 Stmicroelectronics S.R.L. Process for manufacturing a semiconductor power device and respective device
WO2007122646A1 (en) 2006-04-21 2007-11-01 Stmicroelectronics S.R.L. Process for manufacturing a power semiconductor device and corresponding power semiconductor device
US7944035B2 (en) * 2006-05-22 2011-05-17 International Rectifier Corporation Double sided semiconduction device with edge contact and package therefor
EP1873837B1 (de) 2006-06-28 2013-03-27 STMicroelectronics Srl Leistungs-Halbleiterbauelement mit einer Randabschlussstruktur und Verfahren zu seiner Herstellung
US8581345B2 (en) * 2007-06-05 2013-11-12 Stmicroelectronics S.R.L. Charge-balance power device comprising columnar structures and having reduced resistance, and method and system of same
ITTO20070392A1 (it) * 2007-06-05 2008-12-06 St Microelectronics Srl Dispositivo di potenza a bilanciamento di carica comprendente strutture colonnari e avente resistenza ridotta
US7666751B2 (en) * 2007-09-21 2010-02-23 Semiconductor Components Industries, Llc Method of forming a high capacitance diode and structure therefor
IT1397574B1 (it) * 2008-12-29 2013-01-16 St Microelectronics Rousset Dispositivo a semiconduttore di potenza di tipo multi-drain e relativa struttura di terminazione di bordo
JP5484741B2 (ja) * 2009-01-23 2014-05-07 株式会社東芝 半導体装置
US20110049638A1 (en) 2009-09-01 2011-03-03 Stmicroelectronics S.R.L. Structure for high voltage device and corresponding integration process
US8901652B2 (en) * 2009-09-01 2014-12-02 Stmicroelectronics S.R.L. Power MOSFET comprising a plurality of columnar structures defining the charge balancing region
TWI404205B (zh) * 2009-10-06 2013-08-01 Anpec Electronics Corp 絕緣閘雙極電晶體與快速逆向恢復時間整流器之整合結構及其製作方法
EP2599107B1 (de) 2010-07-26 2016-12-21 STMicroelectronics Srl Verfahren zum füllen tiefer gräben in einem halbleitermaterialkörper
WO2014083771A1 (ja) * 2012-11-28 2014-06-05 パナソニック株式会社 半導体素子及びその製造方法
KR101454470B1 (ko) 2013-03-22 2014-10-23 파워큐브세미 (주) 슈퍼정션 반도체 및 제조방법
ITTO20130410A1 (it) 2013-05-22 2014-11-23 St Microelectronics Srl Dispositivo di potenza a supergiunzione e relativo procedimento di fabbricazione
CN105869989B (zh) * 2015-01-21 2019-04-05 北大方正集团有限公司 功率器件的制备方法和功率器件
WO2017081935A1 (ja) * 2015-11-12 2017-05-18 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
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IT201700113926A1 (it) 2017-10-10 2019-04-10 St Microelectronics Srl Dispositivo mosfet di potenza e relativo procedimento di fabbricazione
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Also Published As

Publication number Publication date
US20030201503A1 (en) 2003-10-30
JP2000183348A (ja) 2000-06-30
JP4861544B2 (ja) 2012-01-25
EP1009036B1 (de) 2007-09-19
US7084034B2 (en) 2006-08-01
EP1009036A1 (de) 2000-06-14
US6586798B1 (en) 2003-07-01

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