JP5484741B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5484741B2 JP5484741B2 JP2009012610A JP2009012610A JP5484741B2 JP 5484741 B2 JP5484741 B2 JP 5484741B2 JP 2009012610 A JP2009012610 A JP 2009012610A JP 2009012610 A JP2009012610 A JP 2009012610A JP 5484741 B2 JP5484741 B2 JP 5484741B2
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- 239000004065 semiconductor Substances 0.000 title claims description 216
- 239000000758 substrate Substances 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 39
- 238000009826 distribution Methods 0.000 claims description 10
- 230000003796 beauty Effects 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 22
- 230000015556 catabolic process Effects 0.000 description 21
- 238000000034 method Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 10
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第1導電型の第1半導体領域と、前記第1半導体領域内に、前記半導体基板に対して水平
方向にそれぞれ離間して形成され、前記水平方向において前記第1半導体領域の一部と交
互に並び、前記半導体基板に対して垂直方向において前記半導体基板側に延び、前記半導
体基板側において前記第1半導体領域との界面をなす複数の第2導電型の第2半導体領域
と、前記第2半導体領域に接続され、前記第1半導体領域の表面側に設けられた複数の第
2導電型の第3半導体領域と、前記第1半導体領域の表面に絶縁膜を介して設けられたゲ
ート電極を備え、前記第1半導体領域と前記複数の第2半導体領域は、スーパージャンク
ション構造を形成し、前記界面は、前記ゲート電極から離れるように、前記垂直方向にお
ける前記第1半導体領域の中心よりも前記半導体基板側に位置し、前記第2半導体領域の
チャージ量と前記第1半導体領域のチャージ量との差は、前記界面において0以上であり
、且つ前記垂直方向において、前記第3半導体領域に向って増加することを特徴とする。
102 第1半導体領域
104 第2半導体領域
106 第3半導体領域
108 第4半導体領域
110 第5半導体領域
112 絶縁膜
114 ゲート電極
116 第1主電極
118 第2主電極
B 第1接合面
T 第2接合面
Claims (4)
- 第1導電型の半導体基板と、
前記半導体基板上に形成された第1導電型の第1半導体領域と、
前記第1半導体領域内に、前記半導体基板に対して水平方向にそれぞれ離間して形成さ
れ、前記水平方向において前記第1半導体領域の一部と交互に並び、前記半導体基板に対
して垂直方向において前記半導体基板側に延び、前記半導体基板側において前記第1半導
体領域との界面をなす複数の第2導電型の第2半導体領域と、
前記第2半導体領域に接続され、前記第1半導体領域の表面側に設けられた複数の第2
導電型の第3半導体領域と、
前記第1半導体領域の表面に絶縁膜を介して設けられたゲート電極を備え、
前記第1半導体領域と前記複数の第2半導体領域は、スーパージャンクション構造を形
成し、
前記界面は、前記ゲート電極から離れるように、前記垂直方向における前記第1半導体
領域の中心よりも前記半導体基板側に位置し、
前記第2半導体領域のチャージ量と前記第1半導体領域のチャージ量との差は、前記界
面において0以上であり、且つ前記垂直方向において、前記第3半導体領域に向って増加
することを特徴とする半導体装置。 - 前記第2半導体領域の前記水平方向の幅は、前記垂直方向において一定であって、
前記第2半導体領域の不純物濃度は、前記半導体基板から前記垂直方向に離れるに従っ
て増加する請求項1に記載の半導体装置。 - 前記第2半導体領域の前記水平方向の幅は、前記半導体基板から前記垂直方向に離れる
に従って広がり、
前記第2半導体領域の不純物濃度は、前記垂直方向において一定である請求項1に記載
の半導体装置。 - 前記第2半導体領域の不純物濃度は、前記垂直方向において波型の分布を有する請求項
1に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009012610A JP5484741B2 (ja) | 2009-01-23 | 2009-01-23 | 半導体装置 |
CN2010100040231A CN101794816B (zh) | 2009-01-23 | 2010-01-14 | 半导体器件 |
US12/692,527 US8159023B2 (en) | 2009-01-23 | 2010-01-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009012610A JP5484741B2 (ja) | 2009-01-23 | 2009-01-23 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010171221A JP2010171221A (ja) | 2010-08-05 |
JP2010171221A5 JP2010171221A5 (ja) | 2013-03-28 |
JP5484741B2 true JP5484741B2 (ja) | 2014-05-07 |
Family
ID=42353476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009012610A Active JP5484741B2 (ja) | 2009-01-23 | 2009-01-23 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8159023B2 (ja) |
JP (1) | JP5484741B2 (ja) |
CN (1) | CN101794816B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5739813B2 (ja) * | 2009-09-15 | 2015-06-24 | 株式会社東芝 | 半導体装置 |
JP2011204796A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | 半導体装置およびその製造方法 |
KR101216897B1 (ko) | 2011-08-09 | 2012-12-28 | 주식회사 케이이씨 | 고전압 반도체 소자 |
KR101279222B1 (ko) | 2011-08-26 | 2013-06-26 | 주식회사 케이이씨 | 고전압 반도체 소자 |
US9287371B2 (en) | 2012-10-05 | 2016-03-15 | Semiconductor Components Industries, Llc | Semiconductor device having localized charge balance structure and method |
US9219138B2 (en) | 2012-10-05 | 2015-12-22 | Semiconductor Components Industries, Llc | Semiconductor device having localized charge balance structure and method |
US10256325B2 (en) * | 2012-11-08 | 2019-04-09 | Infineon Technologies Austria Ag | Radiation-hardened power semiconductor devices and methods of forming them |
CN103199104B (zh) * | 2013-03-05 | 2016-04-27 | 矽力杰半导体技术(杭州)有限公司 | 一种晶圆结构以及应用其的功率器件 |
SE1550821A1 (sv) * | 2015-06-16 | 2016-11-22 | Ascatron Ab | SiC SUPER-JUNCTIONS |
US9768247B1 (en) | 2016-05-06 | 2017-09-19 | Semiconductor Components Industries, Llc | Semiconductor device having improved superjunction trench structure and method of manufacture |
CN109643656A (zh) * | 2016-09-02 | 2019-04-16 | 新电元工业株式会社 | Mosfet以及电力转换电路 |
WO2018051512A1 (ja) | 2016-09-16 | 2018-03-22 | 新電元工業株式会社 | Mosfet及び電力変換回路 |
JP6362152B1 (ja) * | 2016-11-11 | 2018-07-25 | 新電元工業株式会社 | Mosfet及び電力変換回路 |
CN110447108B (zh) * | 2017-05-26 | 2022-12-30 | 新电元工业株式会社 | Mosfet以及电力转换电路 |
JP2019054169A (ja) * | 2017-09-15 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
US11005354B2 (en) * | 2017-11-17 | 2021-05-11 | Shindengen Electric Manufacturing Co., Ltd. | Power conversion circuit |
CN110416285B (zh) * | 2019-07-31 | 2024-06-07 | 电子科技大学 | 一种超结功率dmos器件 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69833743T2 (de) * | 1998-12-09 | 2006-11-09 | Stmicroelectronics S.R.L., Agrate Brianza | Herstellungmethode einer integrierte Randstruktur für Hochspannung-Halbleiteranordnungen |
DE69838453D1 (de) * | 1998-12-09 | 2007-10-31 | St Microelectronics Srl | Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren |
JP3743395B2 (ja) | 2002-06-03 | 2006-02-08 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置 |
JP4304433B2 (ja) * | 2002-06-14 | 2009-07-29 | 富士電機デバイステクノロジー株式会社 | 半導体素子 |
JP3634830B2 (ja) * | 2002-09-25 | 2005-03-30 | 株式会社東芝 | 電力用半導体素子 |
JP4904673B2 (ja) * | 2004-02-09 | 2012-03-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP4851738B2 (ja) | 2005-06-29 | 2012-01-11 | 新電元工業株式会社 | 半導体装置 |
WO2007122646A1 (en) | 2006-04-21 | 2007-11-01 | Stmicroelectronics S.R.L. | Process for manufacturing a power semiconductor device and corresponding power semiconductor device |
EP1873837B1 (en) * | 2006-06-28 | 2013-03-27 | STMicroelectronics Srl | Semiconductor power device having an edge-termination structure and manufacturing method thereof |
JP2008153620A (ja) * | 2006-11-21 | 2008-07-03 | Toshiba Corp | 半導体装置 |
JP2008210899A (ja) * | 2007-02-23 | 2008-09-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4564509B2 (ja) * | 2007-04-05 | 2010-10-20 | 株式会社東芝 | 電力用半導体素子 |
JP2008294028A (ja) * | 2007-05-22 | 2008-12-04 | Toshiba Corp | 半導体装置 |
-
2009
- 2009-01-23 JP JP2009012610A patent/JP5484741B2/ja active Active
-
2010
- 2010-01-14 CN CN2010100040231A patent/CN101794816B/zh active Active
- 2010-01-22 US US12/692,527 patent/US8159023B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101794816B (zh) | 2012-10-10 |
CN101794816A (zh) | 2010-08-04 |
US8159023B2 (en) | 2012-04-17 |
JP2010171221A (ja) | 2010-08-05 |
US20100187604A1 (en) | 2010-07-29 |
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