DE69332966D1 - Halbleiterspeicherbauelement - Google Patents

Halbleiterspeicherbauelement

Info

Publication number
DE69332966D1
DE69332966D1 DE69332966T DE69332966T DE69332966D1 DE 69332966 D1 DE69332966 D1 DE 69332966D1 DE 69332966 T DE69332966 T DE 69332966T DE 69332966 T DE69332966 T DE 69332966T DE 69332966 D1 DE69332966 D1 DE 69332966D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69332966T
Other languages
English (en)
Other versions
DE69332966T2 (de
Inventor
Hirotada Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69332966D1 publication Critical patent/DE69332966D1/de
Application granted granted Critical
Publication of DE69332966T2 publication Critical patent/DE69332966T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
DE69332966T 1992-09-04 1993-08-03 Halbleiterspeicherbauelement Expired - Fee Related DE69332966T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP23724992 1992-09-04
JP23724992 1992-09-04
JP5876493 1993-03-18
JP5876493 1993-03-18

Publications (2)

Publication Number Publication Date
DE69332966D1 true DE69332966D1 (de) 2003-06-12
DE69332966T2 DE69332966T2 (de) 2004-02-19

Family

ID=26399777

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69330302T Expired - Fee Related DE69330302T2 (de) 1992-09-04 1993-08-03 Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung
DE69332966T Expired - Fee Related DE69332966T2 (de) 1992-09-04 1993-08-03 Halbleiterspeicherbauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69330302T Expired - Fee Related DE69330302T2 (de) 1992-09-04 1993-08-03 Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung

Country Status (3)

Country Link
US (1) US5596212A (de)
EP (2) EP1154488B1 (de)
DE (2) DE69330302T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3086757B2 (ja) * 1992-09-28 2000-09-11 三菱電機株式会社 スタティックランダムアクセスメモリ
US5956615A (en) * 1994-05-31 1999-09-21 Stmicroelectronics, Inc. Method of forming a metal contact to landing pad structure in an integrated circuit
US5945738A (en) * 1994-05-31 1999-08-31 Stmicroelectronics, Inc. Dual landing pad structure in an integrated circuit
US5702979A (en) * 1994-05-31 1997-12-30 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
US5936271A (en) * 1994-11-15 1999-08-10 Siemens Aktiengesellschaft Unit cell layout and transfer gate design for high density DRAMs having a trench capacitor with signal electrode composed of three differently doped polysilicon layers
US5705427A (en) * 1994-12-22 1998-01-06 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad structure in an integrated circuit
JP4156044B2 (ja) * 1994-12-22 2008-09-24 エスティーマイクロエレクトロニクス，インコーポレイテッド 集積回路におけるランディングパッド構成体の製造方法
JP3581459B2 (ja) * 1995-10-24 2004-10-27 株式会社ルネサステクノロジ 半導体記憶装置
JPH09153610A (ja) 1995-12-01 1997-06-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3686144B2 (ja) * 1995-12-07 2005-08-24 株式会社ルネサステクノロジ 半導体記憶装置およびその製造方法
JP4180659B2 (ja) * 1996-03-28 2008-11-12 インテル・コーポレーション 垂直スタック交差を有するメモリ・セル設計
TW340975B (en) * 1996-08-30 1998-09-21 Toshiba Co Ltd Semiconductor memory
US5847442A (en) * 1996-11-12 1998-12-08 Lucent Technologies Inc. Structure for read-only-memory
JP2003203993A (ja) * 2002-01-10 2003-07-18 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法
KR100764737B1 (ko) * 2006-02-09 2007-10-08 삼성전자주식회사 에스램 셀 및 그 형성 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
US4744056A (en) * 1986-02-28 1988-05-10 Advanced Micro Devices, Inc. Stable high density RAM
JP2523488B2 (ja) * 1986-04-18 1996-08-07 株式会社日立製作所 半導体記憶装置
JPS63291461A (ja) * 1987-05-23 1988-11-29 Sony Corp メモリ装置
JPH0770623B2 (ja) * 1988-07-08 1995-07-31 三菱電機株式会社 スタティックランダムアクセスメモリ装置
JP2821602B2 (ja) * 1988-10-31 1998-11-05 ソニー株式会社 半導体装置とその製造方法
JP2825520B2 (ja) * 1989-03-24 1998-11-18 株式会社日立製作所 半導体装置
JP3011416B2 (ja) * 1989-04-14 2000-02-21 株式会社東芝 スタティック型メモリ
JPH0334569A (ja) * 1989-06-30 1991-02-14 Toshiba Corp スタティック型半導体記憶装置
JPH03234059A (ja) * 1990-02-09 1991-10-18 Sony Corp 半導体メモリ
JPH043976A (ja) * 1990-04-20 1992-01-08 Seiko Epson Corp 半導体集積回路装置
JP3015186B2 (ja) * 1991-03-28 2000-03-06 三菱電機株式会社 半導体記憶装置とそのデータの読み出しおよび書き込み方法

Also Published As

Publication number Publication date
EP0593865B1 (de) 2001-06-06
US5596212A (en) 1997-01-21
EP1154488A1 (de) 2001-11-14
DE69330302T2 (de) 2002-01-10
DE69332966T2 (de) 2004-02-19
EP0593865A2 (de) 1994-04-27
EP1154488B1 (de) 2003-05-07
DE69330302D1 (de) 2001-07-12
EP0593865A3 (en) 1996-01-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee