DE69427107D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69427107D1
DE69427107D1 DE69427107T DE69427107T DE69427107D1 DE 69427107 D1 DE69427107 D1 DE 69427107D1 DE 69427107 T DE69427107 T DE 69427107T DE 69427107 T DE69427107 T DE 69427107T DE 69427107 D1 DE69427107 D1 DE 69427107D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69427107T
Other languages
English (en)
Other versions
DE69427107T2 (de
Inventor
Hiroyuki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69427107D1 publication Critical patent/DE69427107D1/de
Application granted granted Critical
Publication of DE69427107T2 publication Critical patent/DE69427107T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE69427107T 1993-09-29 1994-09-29 Halbleiterspeicheranordnung Expired - Fee Related DE69427107T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5268199A JP3068389B2 (ja) 1993-09-29 1993-09-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69427107D1 true DE69427107D1 (de) 2001-05-23
DE69427107T2 DE69427107T2 (de) 2001-11-15

Family

ID=17455304

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69427107T Expired - Fee Related DE69427107T2 (de) 1993-09-29 1994-09-29 Halbleiterspeicheranordnung

Country Status (5)

Country Link
US (1) US5452254A (de)
EP (1) EP0645772B1 (de)
JP (1) JP3068389B2 (de)
KR (1) KR0167590B1 (de)
DE (1) DE69427107T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5467300A (en) * 1990-06-14 1995-11-14 Creative Integrated Systems, Inc. Grounded memory core for Roms, Eproms, and EEpproms having an address decoder, and sense amplifier
JPH0798985A (ja) * 1993-09-29 1995-04-11 Nec Corp 半導体記憶回路
KR100494097B1 (ko) * 1997-12-31 2005-08-24 주식회사 하이닉스반도체 글리취(Glitch)방지용데이터감지회로
KR100430825B1 (ko) * 1999-06-29 2004-05-10 주식회사 엘지 종이 코팅용 라텍스
KR100405308B1 (ko) * 2000-12-18 2003-11-12 주식회사 엘지화학 인조안료 및 그의 제조방법
US7415291B1 (en) 2001-09-28 2008-08-19 At&T Delaware Intellectual Property, Inc. Device and method for augmenting cellular telephone audio signals
JPWO2004042821A1 (ja) 2002-11-08 2006-03-09 株式会社日立製作所 半導体記憶装置
GB2428149B (en) * 2005-07-07 2009-10-28 Agilent Technologies Inc Multimode optical fibre communication system
US20110286271A1 (en) * 2010-05-21 2011-11-24 Mediatek Inc. Memory systems and methods for reading data stored in a memory cell of a memory device
JP6001777B2 (ja) 2013-06-19 2016-10-05 エルジー・ケム・リミテッド 多層コア−シェル構造のゴム重合体ラテックス、その製造方法及びこれを含むアクリロニトリル−ブタジエン−スチレングラフト共重合体
KR20220010256A (ko) 2020-07-17 2022-01-25 주식회사 엘지화학 그라프트 공중합체의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4272834A (en) * 1978-10-06 1981-06-09 Hitachi, Ltd. Data line potential setting circuit and MIS memory circuit using the same
JPS58169958A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd Ｍｉｓスタテイツク・ランダムアクセスメモリ
JPS59120597U (ja) * 1983-01-31 1984-08-14 カ−ル事務器株式会社 パンチ
JPS639095A (ja) * 1986-06-30 1988-01-14 Toshiba Corp スタテイツク型半導体メモリ
JPS63311690A (ja) * 1987-06-15 1988-12-20 Toshiba Corp 半導体記憶装置
US4939693A (en) * 1989-02-14 1990-07-03 Texas Instruments Incorporated BiCMOS static memory with improved performance stability
JPH03142781A (ja) * 1989-10-27 1991-06-18 Nec Corp 読み出し回路
JP2550743B2 (ja) * 1990-03-27 1996-11-06 日本電気株式会社 半導体メモリ回路

Also Published As

Publication number Publication date
EP0645772A3 (de) 1995-07-19
JP3068389B2 (ja) 2000-07-24
JPH0798986A (ja) 1995-04-11
EP0645772B1 (de) 2001-04-18
EP0645772A2 (de) 1995-03-29
US5452254A (en) 1995-09-19
KR0167590B1 (ko) 1999-02-01
DE69427107T2 (de) 2001-11-15
KR950009727A (ko) 1995-04-24

Similar Documents

Publication Publication Date Title
DE69510834T2 (de) Halbleiterspeicheranordnung
DE69521159D1 (de) Halbleiterspeicheranordnung
DE69422901T2 (de) Halbleiterspeicheranordnung
DE4407210B4 (de) Halbleiterspeicherbauelementaufbau
DE69512700D1 (de) Halbleiterspeicheranordnung
DE69322311D1 (de) Halbleiterspeicheranordnung
DE69432846D1 (de) Halbleiterspeichereinrichtung
DE69427443D1 (de) Halbleiterspeicheranordnung
DE69322747D1 (de) Halbleiterspeicheranordnung
DE69322725D1 (de) Halbleiterspeicheranordnung
KR940011024U (ko) 반도체 메모리 장치
DE69326494T2 (de) Halbleiterspeicheranordnung
DE69332966D1 (de) Halbleiterspeicherbauelement
DE69324470D1 (de) Halbleiterspeicheranordnung
DE69322436D1 (de) Halbleiterspeicheranordnung
DE69427107T2 (de) Halbleiterspeicheranordnung
DE69325132D1 (de) Halbleiterspeicherbauelement
DE69521066D1 (de) Halbleiterspeicheranordnung
DE69326108D1 (de) Halbleiterspeicheranordung
DE69321544T2 (de) Halbleiterspeicheranordnung
DE69423996D1 (de) Halbleiterspeicheranordnung
KR960011705A (ko) 반도체 메모리 장치
DE69420195T2 (de) Halbleiterspeicheranordnung
DE69326206D1 (de) Halbleiterspeicheranordnung
DE69323386D1 (de) Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee