DE69124010D1 - Halbleiterspeicherzelle - Google Patents
HalbleiterspeicherzelleInfo
- Publication number
- DE69124010D1 DE69124010D1 DE69124010T DE69124010T DE69124010D1 DE 69124010 D1 DE69124010 D1 DE 69124010D1 DE 69124010 T DE69124010 T DE 69124010T DE 69124010 T DE69124010 T DE 69124010T DE 69124010 D1 DE69124010 D1 DE 69124010D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- semiconductor memory
- semiconductor
- cell
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14854390A JP2550207B2 (ja) | 1990-06-08 | 1990-06-08 | 半導体メモリセル |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69124010D1 true DE69124010D1 (de) | 1997-02-20 |
DE69124010T2 DE69124010T2 (de) | 1997-05-28 |
Family
ID=15455124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69124010T Expired - Fee Related DE69124010T2 (de) | 1990-06-08 | 1991-06-07 | Halbleiterspeicherzelle |
Country Status (5)
Country | Link |
---|---|
US (1) | US5311464A (de) |
EP (1) | EP0460691B1 (de) |
JP (1) | JP2550207B2 (de) |
KR (1) | KR920001520A (de) |
DE (1) | DE69124010T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL116792A (en) * | 1996-01-16 | 2000-01-31 | Chip Express Israel Ltd | Customizable integrated circuit device |
KR100214843B1 (ko) * | 1996-03-29 | 1999-08-02 | 김주용 | 반도체 소자 및 그의 제조방법 |
KR100295666B1 (ko) * | 1998-10-28 | 2001-08-07 | 김영환 | 혼성메모리장치 |
US6545899B1 (en) * | 2001-12-12 | 2003-04-08 | Micron Technology, Inc. | ROM embedded DRAM with bias sensing |
US6785167B2 (en) * | 2002-06-18 | 2004-08-31 | Micron Technology, Inc. | ROM embedded DRAM with programming |
FR2877143A1 (fr) * | 2004-10-25 | 2006-04-28 | St Microelectronics Sa | Cellule de memoire volatile preenregistree |
GB2437989B (en) * | 2006-05-09 | 2009-09-09 | Micron Technology Inc | Method, apparatus, and system for providing initial state random access memory |
US7710761B2 (en) * | 2007-01-12 | 2010-05-04 | Vns Portfolio Llc | CMOS SRAM/ROM unified bit cell |
JP5880241B2 (ja) * | 2012-04-16 | 2016-03-08 | 株式会社ソシオネクスト | 半導体装置 |
US8964456B2 (en) * | 2012-04-26 | 2015-02-24 | Gn Resound A/S | Semiconductor memory with similar RAM and ROM cells |
US9691495B2 (en) * | 2014-07-30 | 2017-06-27 | Nxp Usa, Inc. | Memory array with RAM and embedded ROM |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4095281A (en) * | 1976-03-04 | 1978-06-13 | Rca Corporation | Random access-erasable read only memory cell |
US4132904A (en) * | 1977-07-28 | 1979-01-02 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
JPS54146935A (en) * | 1978-05-10 | 1979-11-16 | Nec Corp | Mask programmable read/write memory |
JPS55160392A (en) * | 1979-05-28 | 1980-12-13 | Nec Corp | Semiconductor memory |
JPS5740797A (en) * | 1980-08-21 | 1982-03-06 | Nec Corp | Semiconductor storage cell |
JPS5894186A (ja) * | 1981-11-30 | 1983-06-04 | Toshiba Corp | 半導体記憶装置 |
US4618943A (en) * | 1984-01-09 | 1986-10-21 | International Business Machines Corporation | Semiconductor static read/write memory having an additional read-only capability |
JPS62231492A (ja) * | 1986-03-31 | 1987-10-12 | Nec Corp | 半導体記憶装置 |
JPS6381974A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPS63247998A (ja) * | 1987-04-02 | 1988-10-14 | Nec Corp | 半導体記憶装置 |
JPS6430395A (en) * | 1987-07-27 | 1989-02-01 | Nec Corp | Key telephone system |
JPH01119982A (ja) * | 1987-10-31 | 1989-05-12 | Toshiba Corp | スタティック型ランダムアクセスメモリ |
JPH03116488A (ja) * | 1989-09-29 | 1991-05-17 | Fujitsu Ltd | 半導体記憶装置 |
-
1990
- 1990-06-08 JP JP14854390A patent/JP2550207B2/ja not_active Expired - Fee Related
-
1991
- 1991-05-30 US US07/707,915 patent/US5311464A/en not_active Expired - Lifetime
- 1991-06-07 EP EP91109338A patent/EP0460691B1/de not_active Expired - Lifetime
- 1991-06-07 DE DE69124010T patent/DE69124010T2/de not_active Expired - Fee Related
- 1991-06-07 KR KR1019910009417A patent/KR920001520A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR920001520A (ko) | 1992-01-30 |
JP2550207B2 (ja) | 1996-11-06 |
EP0460691A2 (de) | 1991-12-11 |
EP0460691A3 (en) | 1992-04-29 |
DE69124010T2 (de) | 1997-05-28 |
EP0460691B1 (de) | 1997-01-08 |
US5311464A (en) | 1994-05-10 |
JPH0442499A (ja) | 1992-02-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |