DE68918884D1 - Halbleiterlaser-Vorrichtung. - Google Patents
Halbleiterlaser-Vorrichtung.Info
- Publication number
- DE68918884D1 DE68918884D1 DE68918884T DE68918884T DE68918884D1 DE 68918884 D1 DE68918884 D1 DE 68918884D1 DE 68918884 T DE68918884 T DE 68918884T DE 68918884 T DE68918884 T DE 68918884T DE 68918884 D1 DE68918884 D1 DE 68918884D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5990888A JP2653457B2 (ja) | 1988-03-14 | 1988-03-14 | 半導体レーザ装置 |
JP63114750A JP2685800B2 (ja) | 1988-05-13 | 1988-05-13 | 半導体レーザ装置 |
JP11474788A JPH01286479A (ja) | 1988-05-13 | 1988-05-13 | 半導体レーザ装置 |
JP63114751A JP2685801B2 (ja) | 1988-05-13 | 1988-05-13 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68918884D1 true DE68918884D1 (de) | 1994-11-24 |
DE68918884T2 DE68918884T2 (de) | 1995-03-16 |
Family
ID=27463830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918884T Expired - Lifetime DE68918884T2 (de) | 1988-03-14 | 1989-03-14 | Halbleiterlaser-Vorrichtung. |
Country Status (3)
Country | Link |
---|---|
US (2) | US4893313A (de) |
EP (1) | EP0333418B1 (de) |
DE (1) | DE68918884T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5146466A (en) * | 1988-09-29 | 1992-09-08 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
US5181218A (en) * | 1988-12-14 | 1993-01-19 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor laser with non-absorbing mirror structure |
JP2831667B2 (ja) * | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
JPH06105796B2 (ja) * | 1989-05-30 | 1994-12-21 | 信越半導体株式会社 | 発光ダイオードおよびその製造方法 |
US5153889A (en) * | 1989-05-31 | 1992-10-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US5048035A (en) * | 1989-05-31 | 1991-09-10 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
JPH0327578A (ja) * | 1989-06-23 | 1991-02-05 | Eastman Kodatsuku Japan Kk | 発光ダイオ―ドアレイ |
US5038185A (en) * | 1989-11-30 | 1991-08-06 | Xerox Corporation | Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors |
JP2778178B2 (ja) * | 1990-01-31 | 1998-07-23 | 日本電気株式会社 | 半導体レーザ |
US5124995A (en) * | 1990-03-15 | 1992-06-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device |
US5202895A (en) * | 1990-05-07 | 1993-04-13 | Kabushiki Kaisha Toshiba | Semiconductor device having an active layer made of ingaalp material |
DE69132934T2 (de) * | 1990-05-23 | 2002-08-29 | Uniphase Opto Holdings Inc., San Jose | Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben |
US5144633A (en) * | 1990-05-24 | 1992-09-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and manufacturing method thereof |
US5625483A (en) * | 1990-05-29 | 1997-04-29 | Symbol Technologies, Inc. | Integrated light source and scanning element implemented on a semiconductor or electro-optical substrate |
JPH0461292A (ja) * | 1990-06-28 | 1992-02-27 | Mitsubishi Electric Corp | 半導体レーザ |
JPH04116993A (ja) * | 1990-09-07 | 1992-04-17 | Matsushita Electric Ind Co Ltd | 半導体レーザ及びその製造方法 |
US5268328A (en) * | 1990-09-07 | 1993-12-07 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor laser |
JP2863648B2 (ja) * | 1991-04-16 | 1999-03-03 | 三菱電機株式会社 | 可視光半導体レーザ |
JP3129779B2 (ja) * | 1991-08-30 | 2001-01-31 | 株式会社東芝 | 半導体レーザ装置 |
US5294808A (en) * | 1992-10-23 | 1994-03-15 | Cornell Research Foundation, Inc. | Pseudomorphic and dislocation free heteroepitaxial structures |
DE69407448T2 (de) * | 1993-03-03 | 1998-04-16 | Nippon Electric Co | Gewinngeführter Diodenlaser |
JP2914847B2 (ja) * | 1993-07-09 | 1999-07-05 | 株式会社東芝 | 半導体レーザ装置 |
US5631918A (en) * | 1993-11-22 | 1997-05-20 | Xerox Corporation | Laser diode arrays with close beam offsets |
JPH07162089A (ja) * | 1993-12-13 | 1995-06-23 | Mitsubishi Electric Corp | 可視光レーザダイオード及びその製造方法 |
JP2982619B2 (ja) * | 1994-06-29 | 1999-11-29 | 日本電気株式会社 | 半導体光導波路集積型受光素子 |
US5974069A (en) * | 1994-09-16 | 1999-10-26 | Rohm Co., Ltd | Semiconductor laser and manufacturing method thereof |
GB2308732A (en) * | 1995-12-29 | 1997-07-02 | Sharp Kk | A semiconductor laser device |
TW342545B (en) * | 1996-03-28 | 1998-10-11 | Sanyo Electric Co | Semiconductor laser element and method for designing same |
JPH10150244A (ja) * | 1996-11-20 | 1998-06-02 | Mitsubishi Electric Corp | 半導体装置のシミュレーション方法 |
JP4076671B2 (ja) * | 1999-04-14 | 2008-04-16 | ローム株式会社 | レーザビームプリンタ用光源装置 |
CN1204665C (zh) * | 2000-09-08 | 2005-06-01 | 三井化学株式会社 | 半导体激光器装置 |
US6798798B2 (en) * | 2000-12-12 | 2004-09-28 | The Furukawa Electric Co., Ltd. | Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module |
JP3866540B2 (ja) | 2001-07-06 | 2007-01-10 | 株式会社東芝 | 窒化物半導体素子およびその製造方法 |
US7215691B2 (en) * | 2002-09-19 | 2007-05-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
JP4751024B2 (ja) * | 2004-01-16 | 2011-08-17 | シャープ株式会社 | 半導体レーザおよびその製造方法 |
TWI540753B (zh) * | 2013-07-30 | 2016-07-01 | 隆達電子股份有限公司 | 發光二極體結構 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4799228A (en) * | 1985-08-23 | 1989-01-17 | Kabushiki Kaisha Toshiba | Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide |
US4792958A (en) * | 1986-02-28 | 1988-12-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
JPH0815228B2 (ja) * | 1986-02-28 | 1996-02-14 | 株式会社東芝 | 半導体レ−ザ装置及びその製造方法 |
JP2647076B2 (ja) * | 1986-02-28 | 1997-08-27 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
EP0259026B1 (de) * | 1986-08-08 | 1994-04-27 | Kabushiki Kaisha Toshiba | Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter |
JP2555282B2 (ja) * | 1986-08-08 | 1996-11-20 | 株式会社東芝 | 半導体レ−ザ装置及びその製造方法 |
JPH06343387A (ja) * | 1993-06-11 | 1994-12-20 | Masayoshi Kaniyoshi | 野菜の容器詰めと冷凍物 |
-
1989
- 1989-03-14 US US07/323,400 patent/US4893313A/en not_active Expired - Lifetime
- 1989-03-14 EP EP89302466A patent/EP0333418B1/de not_active Expired - Lifetime
- 1989-03-14 DE DE68918884T patent/DE68918884T2/de not_active Expired - Lifetime
- 1989-11-21 US US07/439,428 patent/US5036521A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE68918884T2 (de) | 1995-03-16 |
US4893313A (en) | 1990-01-09 |
US5036521A (en) | 1991-07-30 |
EP0333418A2 (de) | 1989-09-20 |
EP0333418B1 (de) | 1994-10-19 |
EP0333418A3 (en) | 1989-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE68915673D1 (de) | Halbleiterlaser-Vorrichtung. | |
DE68918884D1 (de) | Halbleiterlaser-Vorrichtung. | |
DE3787769D1 (de) | Halbleiterlaservorrichtung. | |
DE3687329D1 (de) | Halbleiterlaser-vorrichtung. | |
DE68917848D1 (de) | Halbleiteranordnung. | |
DE3750995D1 (de) | Halbleiterlaservorrichtung. | |
DE3786339D1 (de) | Halbleiterlaservorrichtung. | |
DE68908646D1 (de) | Halbleiterlaser. | |
DE3685466D1 (de) | Halbleiterlaser-vorrichtung. | |
DE68921421D1 (de) | Halbleitervorrichtung. | |
DE69009448D1 (de) | Halbleiterlaseranordnung. | |
DE68912512D1 (de) | Halbleiterlaser-Vorrichtung. | |
NL194185B (nl) | Halfgeleiderlaserinrichting. | |
DE68912852D1 (de) | Halbleiterlaser. | |
DE68910492D1 (de) | Halbleiterlaservorrichtung. | |
DE3680223D1 (de) | Halbleiterlaser-vorrichtung. | |
DE3789832D1 (de) | Halbleiterlaser-Vorrichtung. | |
DE69018732D1 (de) | Halbleiterlaser. | |
DE3688943D1 (de) | Halbleiterlaservorrichtung. | |
DE3776186D1 (de) | Halbleiterlaser-vorrichtung. | |
DE3650379D1 (de) | Halbleiterlaservorrichtung. | |
DE69009266D1 (de) | Halbleiterlaser-Vorrichtung. | |
DE69005132D1 (de) | Halbleiterlaser. | |
DE3688017D1 (de) | Halbleiterlaser-vorrichtung. | |
DE69021151D1 (de) | Halbleiterlaser-Vorrichtung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |