DE3688017D1 - Halbleiterlaser-vorrichtung. - Google Patents

Halbleiterlaser-vorrichtung.

Info

Publication number
DE3688017D1
DE3688017D1 DE8686305504T DE3688017T DE3688017D1 DE 3688017 D1 DE3688017 D1 DE 3688017D1 DE 8686305504 T DE8686305504 T DE 8686305504T DE 3688017 T DE3688017 T DE 3688017T DE 3688017 D1 DE3688017 D1 DE 3688017D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686305504T
Other languages
English (en)
Other versions
DE3688017T2 (de
Inventor
Saburo Yamamoto
Toshiro Hayakawa
Takahiro Suyama
Kohsei Takahashi
Masafumi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3688017D1 publication Critical patent/DE3688017D1/de
Application granted granted Critical
Publication of DE3688017T2 publication Critical patent/DE3688017T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8686305504T 1985-07-18 1986-07-17 Halbleiterlaser-vorrichtung. Expired - Fee Related DE3688017T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60160941A JPH0722214B2 (ja) 1985-07-18 1985-07-18 半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
DE3688017D1 true DE3688017D1 (de) 1993-04-22
DE3688017T2 DE3688017T2 (de) 1993-06-24

Family

ID=15725532

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686305504T Expired - Fee Related DE3688017T2 (de) 1985-07-18 1986-07-17 Halbleiterlaser-vorrichtung.

Country Status (4)

Country Link
US (1) US4899349A (de)
EP (1) EP0209387B1 (de)
JP (1) JPH0722214B2 (de)
DE (1) DE3688017T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147792A (ja) * 1985-12-23 1987-07-01 Hitachi Ltd 半導体レ−ザの作製方法
FR2596529B1 (fr) * 1986-03-28 1988-05-13 Thomson Csf Guide d'onde optique en materiau semiconducteur, laser appliquant ce guide d'onde et procede de realisation
JPS63287082A (ja) * 1987-05-19 1988-11-24 Sharp Corp 半導体レ−ザ素子
JPH0243791A (ja) * 1988-08-04 1990-02-14 Fuji Electric Co Ltd 埋め込み型半導体レーザ素子
JPH02114690A (ja) * 1988-10-25 1990-04-26 Fuji Electric Co Ltd 半導体レーザ素子
JPH02174178A (ja) * 1988-12-26 1990-07-05 Sharp Corp 半導体レーザ素子
US5022036A (en) * 1988-12-29 1991-06-04 Sharp Kabushiki Kaisha Semiconductor laser device
JPH02228089A (ja) * 1989-02-28 1990-09-11 Omron Tateisi Electron Co リッジ導波路型半導体レーザ
JPH07112093B2 (ja) * 1990-01-12 1995-11-29 松下電器産業株式会社 半導体レーザおよびその製造方法
JP2814124B2 (ja) * 1990-01-27 1998-10-22 日本電信電話株式会社 埋込み形半導体発光素子
US5210767A (en) * 1990-09-20 1993-05-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
DE69308977T2 (de) * 1992-09-25 1997-10-09 Furukawa Electric Co Ltd Halbleiterlaservorrichtung
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
JPH08222815A (ja) * 1994-12-13 1996-08-30 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
JPS55111191A (en) * 1979-02-20 1980-08-27 Sharp Corp Method of manufacturing semiconductor laser device
JPS5698889A (en) * 1980-01-10 1981-08-08 Kokusai Denshin Denwa Co Ltd <Kdd> Ingaasp semiconductor laser
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
US4706254A (en) * 1983-05-12 1987-11-10 Canon Kabushiki Kaisha Semiconductor device and its fabrication
JPS6045086A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6064489A (ja) * 1983-09-19 1985-04-13 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6085585A (ja) * 1983-10-17 1985-05-15 Nec Corp 埋め込み型半導体レ−ザ
JPS60107881A (ja) * 1983-11-16 1985-06-13 Hitachi Ltd 半導体レ−ザ装置の製造方法
JPS60182181A (ja) * 1984-02-28 1985-09-17 Sharp Corp 半導体レ−ザアレイ
JPS60229389A (ja) * 1984-04-26 1985-11-14 Sharp Corp 半導体レ−ザ素子
JPS60236274A (ja) * 1984-05-10 1985-11-25 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0209387B1 (de) 1993-03-17
JPS6220392A (ja) 1987-01-28
JPH0722214B2 (ja) 1995-03-08
US4899349A (en) 1990-02-06
EP0209387A3 (en) 1988-04-20
EP0209387A2 (de) 1987-01-21
DE3688017T2 (de) 1993-06-24

Similar Documents

Publication Publication Date Title
DE3687329D1 (de) Halbleiterlaser-vorrichtung.
DE3584702D1 (de) Halbleiterlaservorrichtung.
DE3584330D1 (de) Halbleiterlaservorrichtung.
DE3787769D1 (de) Halbleiterlaservorrichtung.
DE3676867D1 (de) Halbleiterlaser.
DE3650012D1 (de) Halbleitervorrichtung.
DE3685466D1 (de) Halbleiterlaser-vorrichtung.
NL189326C (nl) Halfgeleiderinrichting.
DE3681799D1 (de) Halbleiter-bearbeitungseinrichtung.
DE3587748D1 (de) Halbleiterlaseranordnung.
DE3750995D1 (de) Halbleiterlaservorrichtung.
DE3786339D1 (de) Halbleiterlaservorrichtung.
DE3688064D1 (de) Halbleitervorrichtung.
DE3674959D1 (de) Halbleiterlaser.
NL194185B (nl) Halfgeleiderlaserinrichting.
DE3687102D1 (de) Halbleiterlaser.
DE3688002D1 (de) Halbleiter-laser.
DE3680223D1 (de) Halbleiterlaser-vorrichtung.
DE3688943D1 (de) Halbleiterlaservorrichtung.
DE3789832D1 (de) Halbleiterlaser-Vorrichtung.
DE3650379D1 (de) Halbleiterlaservorrichtung.
DE3776186D1 (de) Halbleiterlaser-vorrichtung.
DE3688017D1 (de) Halbleiterlaser-vorrichtung.
DE3668099D1 (de) Laserhalbleiteranordnung.
DE3581076D1 (de) Halbleiterlaser-vorrichtungen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee