DE68910492D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number
DE68910492D1
DE68910492D1 DE89313704T DE68910492T DE68910492D1 DE 68910492 D1 DE68910492 D1 DE 68910492D1 DE 89313704 T DE89313704 T DE 89313704T DE 68910492 T DE68910492 T DE 68910492T DE 68910492 D1 DE68910492 D1 DE 68910492D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89313704T
Other languages
English (en)
Other versions
DE68910492T2 (de
Inventor
Takahiro Suyama
Masafumi Kondo
Kazuaki Sasaki
Masahiro Hosoda Masahir Hosoda
Kosei A Excel Height Takahashi
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33412888A external-priority patent/JPH0656910B2/ja
Priority claimed from JP63334124A external-priority patent/JPH0656909B2/ja
Priority claimed from JP33412288A external-priority patent/JPH02178985A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE68910492D1 publication Critical patent/DE68910492D1/de
Application granted granted Critical
Publication of DE68910492T2 publication Critical patent/DE68910492T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE89313704T 1988-12-29 1989-12-29 Halbleiterlaservorrichtung. Expired - Fee Related DE68910492T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33412888A JPH0656910B2 (ja) 1988-12-29 1988-12-29 半導体レーザ素子及びその製造方法
JP63334124A JPH0656909B2 (ja) 1988-12-29 1988-12-29 半導体レーザ素子
JP33412288A JPH02178985A (ja) 1988-12-29 1988-12-29 半導体レーザ素子

Publications (2)

Publication Number Publication Date
DE68910492D1 true DE68910492D1 (de) 1993-12-09
DE68910492T2 DE68910492T2 (de) 1994-02-24

Family

ID=27340643

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89313704T Expired - Fee Related DE68910492T2 (de) 1988-12-29 1989-12-29 Halbleiterlaservorrichtung.

Country Status (3)

Country Link
US (1) US5022036A (de)
EP (1) EP0376753B1 (de)
DE (1) DE68910492T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138626A (en) * 1990-09-12 1992-08-11 Hughes Aircraft Company Ridge-waveguide buried-heterostructure laser and method of fabrication
US5329134A (en) * 1992-01-10 1994-07-12 International Business Machines Corporation Superluminescent diode having a quantum well and cavity length dependent threshold current
US5325388A (en) * 1993-05-05 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Optoelectronic waveguide neural architecture
JP3322512B2 (ja) * 1994-04-28 2002-09-09 三洋電機株式会社 半導体レーザ素子の設計方法
US5519362A (en) * 1995-08-23 1996-05-21 The United States Of America As Represented By The Secretary Of The Air Force Optical current controlled oscillators
US6486068B2 (en) * 1998-01-08 2002-11-26 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor laser diodes
US7072373B2 (en) * 1998-11-30 2006-07-04 The Furukawa Electric Co., Ltd. Ridge waveguide semiconductor laser diode
JP4504610B2 (ja) * 2002-03-01 2010-07-14 株式会社日立製作所 リッジ型半導体レーザ素子
JP4615179B2 (ja) * 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
KR100964399B1 (ko) * 2003-03-08 2010-06-17 삼성전자주식회사 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체
JP4472278B2 (ja) * 2003-06-26 2010-06-02 三菱電機株式会社 半導体レーザ素子
JP4284126B2 (ja) * 2003-07-22 2009-06-24 シャープ株式会社 半導体レーザ素子
JP2005109102A (ja) * 2003-09-30 2005-04-21 Mitsubishi Electric Corp モノリシック半導体レーザおよびその製造方法
JP4220436B2 (ja) * 2004-06-24 2009-02-04 浜松ホトニクス株式会社 半導体レーザ素子及び半導体レーザ素子アレイ
JP4992742B2 (ja) * 2008-01-29 2012-08-08 三菱電機株式会社 半導体レーザ
US8451874B2 (en) * 2009-12-02 2013-05-28 Massachusetts Institute Of Technology Very large mode slab-coupled optical waveguide laser and amplifier
US8571080B2 (en) * 2009-12-02 2013-10-29 Massachusetts Institute Of Technology High efficiency slab-coupled optical waveguide laser and amplifier

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60229389A (ja) * 1984-04-26 1985-11-14 Sharp Corp 半導体レ−ザ素子
JPH0710015B2 (ja) * 1985-01-30 1995-02-01 株式会社日立製作所 半導体レ−ザ装置及びその作製方法
JPH0722214B2 (ja) * 1985-07-18 1995-03-08 シャープ株式会社 半導体レーザ素子の製造方法
US4783788A (en) * 1985-12-16 1988-11-08 Lytel Incorporated High power semiconductor lasers
DE3612695A1 (de) * 1986-04-15 1987-10-22 Siemens Ag Halbleiter-laserdiode mit qualitativ verbesserter resonator-spiegelflaeche
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0376753B1 (de) 1993-11-03
EP0376753A2 (de) 1990-07-04
US5022036A (en) 1991-06-04
DE68910492T2 (de) 1994-02-24
EP0376753A3 (de) 1991-01-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee