DE3789832D1 - Halbleiterlaser-Vorrichtung. - Google Patents

Halbleiterlaser-Vorrichtung.

Info

Publication number
DE3789832D1
DE3789832D1 DE3789832T DE3789832T DE3789832D1 DE 3789832 D1 DE3789832 D1 DE 3789832D1 DE 3789832 T DE3789832 T DE 3789832T DE 3789832 T DE3789832 T DE 3789832T DE 3789832 D1 DE3789832 D1 DE 3789832D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789832T
Other languages
English (en)
Other versions
DE3789832T2 (de
Inventor
Haruhisa Takiguchi
Shinji Kaneiwa
Hiroaki Kudo
Toshihiko Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3789832D1 publication Critical patent/DE3789832D1/de
Publication of DE3789832T2 publication Critical patent/DE3789832T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE3789832T 1986-07-10 1987-07-10 Halbleiterlaser-Vorrichtung. Expired - Fee Related DE3789832T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61164150A JPS6318686A (ja) 1986-07-10 1986-07-10 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3789832D1 true DE3789832D1 (de) 1994-06-23
DE3789832T2 DE3789832T2 (de) 1994-10-20

Family

ID=15787690

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789832T Expired - Fee Related DE3789832T2 (de) 1986-07-10 1987-07-10 Halbleiterlaser-Vorrichtung.

Country Status (4)

Country Link
US (1) US4852116A (de)
EP (1) EP0253597B1 (de)
JP (1) JPS6318686A (de)
DE (1) DE3789832T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3809609A1 (de) * 1988-03-22 1989-10-05 Siemens Ag Laserdiode zur erzeugung streng monochromatischer laserstrahlung
JP2703784B2 (ja) * 1988-11-08 1998-01-26 シャープ株式会社 半導体レーザ素子
DE69132934T2 (de) * 1990-05-23 2002-08-29 Uniphase Opto Holdings Inc., San Jose Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben
US5292685A (en) * 1991-07-24 1994-03-08 Sharp Kabushiki Kaisha Method for producing a distributed feedback semiconductor laser device
JP2725569B2 (ja) * 1992-11-18 1998-03-11 松下電器産業株式会社 レーザ発振器
US5469459A (en) * 1993-01-08 1995-11-21 Nec Corporation Laser diode element with excellent intermodulation distortion characteristic
US5319666A (en) * 1993-04-07 1994-06-07 At&T Bell Laboratories Article comprising a distributed feedback laser
JPH07154024A (ja) * 1993-11-30 1995-06-16 Fuji Photo Film Co Ltd 半導体レーザー
JP3007928B2 (ja) * 1995-02-22 2000-02-14 日本電気株式会社 光半導体素子の製造方法
US5889805A (en) * 1996-11-01 1999-03-30 Coherent, Inc. Low-threshold high-efficiency laser diodes with aluminum-free active region
US6195381B1 (en) * 1998-04-27 2001-02-27 Wisconsin Alumni Research Foundation Narrow spectral width high-power distributed feedback semiconductor lasers
EP1043818B1 (de) * 1999-04-09 2011-07-20 Mitsui Chemicals, Inc. Halbleiterlaservorrichtung, seltenen erden dotierten Faserverstärker und Faserlaser
US6611544B1 (en) 2000-04-11 2003-08-26 E20 Communications, Inc. Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers
JP4804618B2 (ja) * 2000-09-28 2011-11-02 富士通株式会社 半導体レーザ
JP2008088515A (ja) * 2006-10-03 2008-04-17 Seiko Epson Corp めっき基板およびその製造方法
US8213751B1 (en) * 2008-11-26 2012-07-03 Optonet Inc. Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329479B2 (de) * 1973-10-05 1978-08-21
US4178604A (en) * 1973-10-05 1979-12-11 Hitachi, Ltd. Semiconductor laser device
US4045749A (en) * 1975-11-24 1977-08-30 Xerox Corporation Corrugation coupled twin guide laser
JPS52144991A (en) * 1976-05-28 1977-12-02 Agency Of Ind Science & Technol Production of distribution feedback type semiconductor laser
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ
JPS61100991A (ja) * 1984-10-22 1986-05-19 Sharp Corp 半導体レ−ザ素子
JPS61190994A (ja) * 1985-02-19 1986-08-25 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0253597A3 (en) 1988-10-12
DE3789832T2 (de) 1994-10-20
EP0253597A2 (de) 1988-01-20
JPS6318686A (ja) 1988-01-26
EP0253597B1 (de) 1994-05-18
US4852116A (en) 1989-07-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee