DE602005021212D1 - Material zur bildung eines resistschutzfilms für das eintauchbelichtungsverfahren und verfahren zur bildung eines resistmusters unter verwendung des schutzfilms - Google Patents

Material zur bildung eines resistschutzfilms für das eintauchbelichtungsverfahren und verfahren zur bildung eines resistmusters unter verwendung des schutzfilms

Info

Publication number
DE602005021212D1
DE602005021212D1 DE602005021212T DE602005021212T DE602005021212D1 DE 602005021212 D1 DE602005021212 D1 DE 602005021212D1 DE 602005021212 T DE602005021212 T DE 602005021212T DE 602005021212 T DE602005021212 T DE 602005021212T DE 602005021212 D1 DE602005021212 D1 DE 602005021212D1
Authority
DE
Germany
Prior art keywords
forming
resist pattern
immersion exposure
film
protection film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005021212T
Other languages
English (en)
Inventor
Keita Ishizuka
Kazumasa Wakiya
Kotaro Endo
Masaaki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35196923&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE602005021212(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP2004132081A external-priority patent/JP5301070B2/ja
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of DE602005021212D1 publication Critical patent/DE602005021212D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE602005021212T 2004-04-27 2005-04-25 Material zur bildung eines resistschutzfilms für das eintauchbelichtungsverfahren und verfahren zur bildung eines resistmusters unter verwendung des schutzfilms Active DE602005021212D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004132081A JP5301070B2 (ja) 2004-02-16 2004-04-27 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法
PCT/JP2005/007846 WO2005103098A1 (ja) 2004-04-27 2005-04-25 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法

Publications (1)

Publication Number Publication Date
DE602005021212D1 true DE602005021212D1 (de) 2010-06-24

Family

ID=35196923

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005021212T Active DE602005021212D1 (de) 2004-04-27 2005-04-25 Material zur bildung eines resistschutzfilms für das eintauchbelichtungsverfahren und verfahren zur bildung eines resistmusters unter verwendung des schutzfilms

Country Status (7)

Country Link
US (1) US7846637B2 (de)
EP (1) EP1741730B1 (de)
KR (2) KR100960838B1 (de)
CN (1) CN1946751B (de)
DE (1) DE602005021212D1 (de)
TW (1) TW200606179A (de)
WO (1) WO2005103098A1 (de)

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JP4993138B2 (ja) * 2007-09-26 2012-08-08 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
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JP5381298B2 (ja) * 2008-05-12 2014-01-08 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
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JP4822028B2 (ja) * 2008-12-02 2011-11-24 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
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JP5170456B2 (ja) 2009-04-16 2013-03-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
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JP5131488B2 (ja) * 2009-12-22 2013-01-30 信越化学工業株式会社 含フッ素単量体及び含フッ素高分子化合物
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US8597869B2 (en) * 2010-10-25 2013-12-03 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, resist composition, and patterning process
JP5898985B2 (ja) 2011-05-11 2016-04-06 東京応化工業株式会社 レジストパターン形成方法
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Also Published As

Publication number Publication date
KR20070007156A (ko) 2007-01-12
WO2005103098A1 (ja) 2005-11-03
EP1741730B1 (de) 2010-05-12
KR100960838B1 (ko) 2010-06-07
US7846637B2 (en) 2010-12-07
EP1741730A1 (de) 2007-01-10
TWI334421B (de) 2010-12-11
CN1946751A (zh) 2007-04-11
TW200606179A (en) 2006-02-16
US20080032202A1 (en) 2008-02-07
KR100887202B1 (ko) 2009-03-06
CN1946751B (zh) 2010-12-08
KR20080103111A (ko) 2008-11-26
EP1741730A4 (de) 2008-06-25

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