DE602005013038D1 - Lithographischer Apparat, Verfahren zur Herstellung einer Vorrichtung - Google Patents

Lithographischer Apparat, Verfahren zur Herstellung einer Vorrichtung

Info

Publication number
DE602005013038D1
DE602005013038D1 DE602005013038T DE602005013038T DE602005013038D1 DE 602005013038 D1 DE602005013038 D1 DE 602005013038D1 DE 602005013038 T DE602005013038 T DE 602005013038T DE 602005013038 T DE602005013038 T DE 602005013038T DE 602005013038 D1 DE602005013038 D1 DE 602005013038D1
Authority
DE
Germany
Prior art keywords
making
lithographic apparatus
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005013038T
Other languages
English (en)
Inventor
Johannes Catharinus H Mulkens
Boeij Wilhelmus Petrus De
Carsten Andreas Kohler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602005013038D1 publication Critical patent/DE602005013038D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0037—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements
    • G02B27/0043—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements in projection exposure systems, e.g. microlithographic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • G02B5/3091—Birefringent or phase retarding elements for use in the UV
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE602005013038T 2004-10-12 2005-09-28 Lithographischer Apparat, Verfahren zur Herstellung einer Vorrichtung Active DE602005013038D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/961,408 US7245353B2 (en) 2004-10-12 2004-10-12 Lithographic apparatus, device manufacturing method

Publications (1)

Publication Number Publication Date
DE602005013038D1 true DE602005013038D1 (de) 2009-04-16

Family

ID=35695712

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005013038T Active DE602005013038D1 (de) 2004-10-12 2005-09-28 Lithographischer Apparat, Verfahren zur Herstellung einer Vorrichtung

Country Status (8)

Country Link
US (2) US7245353B2 (de)
EP (1) EP1647863B1 (de)
JP (1) JP4243272B2 (de)
KR (1) KR100700366B1 (de)
CN (1) CN100582945C (de)
DE (1) DE602005013038D1 (de)
SG (1) SG121952A1 (de)
TW (1) TWI319517B (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3226073A3 (de) * 2003-04-09 2017-10-11 Nikon Corporation Belichtungsverfahren und -vorrichtung sowie verfahren zur herstellung der vorrichtung
TWI457712B (zh) * 2003-10-28 2014-10-21 尼康股份有限公司 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法
TWI519819B (zh) 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
DE10355301B3 (de) * 2003-11-27 2005-06-23 Infineon Technologies Ag Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie
US8270077B2 (en) * 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US20070019179A1 (en) * 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
KR101099913B1 (ko) 2004-01-16 2011-12-29 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
TWI395068B (zh) * 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI494972B (zh) 2004-02-06 2015-08-01 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
TWI453795B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
JP2006279017A (ja) * 2005-03-02 2006-10-12 Canon Inc 露光装置及び方法、計測装置、並びに、デバイス製造方法
US7403267B2 (en) * 2005-03-31 2008-07-22 Asml Netherlands B.V. System and method for providing modified illumination intensity
US20080186466A1 (en) * 2005-04-12 2008-08-07 Sirat Gabriel Y Element for defocusing tm mode for lithography
KR101459157B1 (ko) 2005-10-04 2014-11-07 칼 짜이스 에스엠티 게엠베하 광학 시스템 내의, 특히 마이크로리소그래피용 투영 노광 장치 내의 편광 분포에 영향을 주기 위한 장치 및 방법
JP4675745B2 (ja) * 2005-10-25 2011-04-27 株式会社東芝 フォトマスク用基板の選別方法、フォトマスク作製方法及び半導体装置製造方法
WO2007055120A1 (ja) * 2005-11-10 2007-05-18 Nikon Corporation 照明光学装置、露光装置、および露光方法
JP2008016516A (ja) * 2006-07-03 2008-01-24 Canon Inc 露光装置
JP2008070730A (ja) * 2006-09-15 2008-03-27 Sony Corp マスクブランクス選定方法、複屈折性指標の算出方法、リソグラフィ方法、マスクブランクス選定装置、複屈折性指標算出装置およびそのプログラム
JP4752695B2 (ja) * 2006-09-15 2011-08-17 ソニー株式会社 マスクパターン補正方法，マスクパターン補正装置およびそのプログラム
US7952685B2 (en) * 2007-03-15 2011-05-31 Carl Zeiss Smt Ag Illuminator for a lithographic apparatus and method
US7817250B2 (en) * 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
DE102007043958B4 (de) * 2007-09-14 2011-08-25 Carl Zeiss SMT GmbH, 73447 Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
US8040492B2 (en) * 2007-11-27 2011-10-18 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
US7880863B2 (en) * 2008-01-22 2011-02-01 Infineon Technologies Ag Lithography system with illumination monitor
DE102008042356A1 (de) 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
DE102011083774B4 (de) * 2010-10-04 2019-06-13 Carl Zeiss Sms Ltd. Verfahren zum Bestimmen von Laser korrigierenden Tool-Parametern
NL2008335A (en) 2011-04-07 2012-10-09 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and method of correcting a mask.
WO2013123973A1 (en) 2012-02-21 2013-08-29 Carl Zeiss Sms Ltd. Method and apparatus for compensating at least one defect of an optical system
DE102012205045A1 (de) 2012-03-29 2013-10-02 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
CN105549190A (zh) * 2016-01-15 2016-05-04 青岛农业大学 一种智能的折返射投射物镜
EP3336606A1 (de) * 2016-12-16 2018-06-20 ASML Netherlands B.V. Verfahren zur überwachung der eigenschaft von beleuchtung aus einer metrologievorrichtung
JP2021531502A (ja) 2018-07-17 2021-11-18 カール ツァイス エスエムエス リミテッド フォトリソグラフィマスクの基板に導入される１つまたは複数のピクセルの効果を決定するための方法および装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19921795A1 (de) 1999-05-11 2000-11-23 Zeiss Carl Fa Projektions-Belichtungsanlage und Belichtungsverfahren der Mikrolithographie
US6410192B1 (en) * 1999-11-15 2002-06-25 Corning Incorporated Photolithography method, photolithography mask blanks, and method of making
EP1277073B1 (de) 2000-04-25 2006-11-15 ASML Holding N.V. Optisches reduktionssystem mit kontrolle der belichtungspolarisation
DE10324468B4 (de) * 2003-05-30 2006-11-09 Carl Zeiss Smt Ag Mikrolithografische Projektionsbelichtungsanlage, Projektionsobjektiv hierfür sowie darin enthaltenes optisches Element

Also Published As

Publication number Publication date
EP1647863A3 (de) 2006-07-12
US7245355B2 (en) 2007-07-17
TW200625017A (en) 2006-07-16
US20060077370A1 (en) 2006-04-13
JP2006114904A (ja) 2006-04-27
US7245353B2 (en) 2007-07-17
CN1760763A (zh) 2006-04-19
EP1647863A2 (de) 2006-04-19
CN100582945C (zh) 2010-01-20
TWI319517B (en) 2010-01-11
KR20060052182A (ko) 2006-05-19
JP4243272B2 (ja) 2009-03-25
SG121952A1 (en) 2006-05-26
KR100700366B1 (ko) 2007-03-28
EP1647863B1 (de) 2009-03-04
US20060077373A1 (en) 2006-04-13

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