DE60114359D1 - Datenspeicheranordnung - Google Patents

Datenspeicheranordnung

Info

Publication number
DE60114359D1
DE60114359D1 DE60114359T DE60114359T DE60114359D1 DE 60114359 D1 DE60114359 D1 DE 60114359D1 DE 60114359 T DE60114359 T DE 60114359T DE 60114359 T DE60114359 T DE 60114359T DE 60114359 D1 DE60114359 D1 DE 60114359D1
Authority
DE
Germany
Prior art keywords
storage device
data storage
data
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60114359T
Other languages
English (en)
Other versions
DE60114359T2 (de
Inventor
Janice H Nickel
Lung T Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE60114359D1 publication Critical patent/DE60114359D1/de
Application granted granted Critical
Publication of DE60114359T2 publication Critical patent/DE60114359T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
DE60114359T 2001-01-11 2001-12-07 Datenspeicheranordnung Expired - Lifetime DE60114359T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/758,757 US6603678B2 (en) 2001-01-11 2001-01-11 Thermally-assisted switching of magnetic memory elements
US758757 2001-01-11

Publications (2)

Publication Number Publication Date
DE60114359D1 true DE60114359D1 (de) 2005-12-01
DE60114359T2 DE60114359T2 (de) 2006-06-22

Family

ID=25052991

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60114359T Expired - Lifetime DE60114359T2 (de) 2001-01-11 2001-12-07 Datenspeicheranordnung

Country Status (8)

Country Link
US (2) US6603678B2 (de)
EP (1) EP1225592B1 (de)
JP (1) JP4194781B2 (de)
KR (2) KR20030009054A (de)
CN (1) CN1253895C (de)
DE (1) DE60114359T2 (de)
HK (1) HK1048884B (de)
TW (1) TW519644B (de)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
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US6724674B2 (en) * 2000-11-08 2004-04-20 International Business Machines Corporation Memory storage device with heating element
US6603678B2 (en) * 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
US6687178B1 (en) * 2001-02-23 2004-02-03 Western Digital (Fremont), Inc. Temperature dependent write current source for magnetic tunnel junction MRAM
JP2002368196A (ja) * 2001-05-30 2002-12-20 Internatl Business Mach Corp <Ibm> メモリセル、記憶回路ブロック、データの書き込み方法及びデータの読み出し方法
FR2829867B1 (fr) 2001-09-20 2003-12-19 Centre Nat Rech Scient Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture
WO2003065377A1 (fr) * 2002-02-01 2003-08-07 Hitachi, Ltd. Memoire
EP1339065A3 (de) * 2002-02-22 2005-06-15 Kabushiki Kaisha Toshiba Magnetischer Direktzugriffsspeicher
SG115462A1 (en) * 2002-03-12 2005-10-28 Inst Data Storage Multi-stage per cell magnetoresistive random access memory
KR100829557B1 (ko) * 2002-06-22 2008-05-14 삼성전자주식회사 열자기 자발 홀 효과를 이용한 자기 램 및 이를 이용한데이터 기록 및 재생방법
JP4078912B2 (ja) * 2002-07-26 2008-04-23 ソニー株式会社 磁気記憶装置
US6791865B2 (en) * 2002-09-03 2004-09-14 Hewlett-Packard Development Company, L.P. Memory device capable of calibration and calibration methods therefor
US7023723B2 (en) * 2002-11-12 2006-04-04 Nve Corporation Magnetic memory layers thermal pulse transitions
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
DE10301092B4 (de) * 2003-01-14 2006-06-29 Infineon Technologies Ag MRAM-Speicherzelle
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
JP2004288311A (ja) * 2003-03-24 2004-10-14 Toshiba Corp 半導体記憶装置及びその制御方法
EP1639656B1 (de) * 2003-06-23 2019-06-12 NVE Corporation Thermisch betriebene ferromagnetische speicherzelle
US6906941B2 (en) * 2003-07-22 2005-06-14 Hewlett-Packard Development Company, L.P. Magnetic memory structure
JP2005064050A (ja) * 2003-08-14 2005-03-10 Toshiba Corp 半導体記憶装置及びそのデータ書き込み方法
US6961263B2 (en) * 2003-09-08 2005-11-01 Hewlett-Packard Development Company, L.P. Memory device with a thermally assisted write
US6865105B1 (en) 2003-09-22 2005-03-08 Hewlett-Packard Development Company, L.P. Thermal-assisted switching array configuration for MRAM
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
KR100653708B1 (ko) * 2004-11-03 2006-12-04 삼성전자주식회사 발열체를 갖는 자기 램 소자의 구동 방법들
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
US6987692B2 (en) * 2003-10-03 2006-01-17 Hewlett-Packard Development Company, L.P. Magnetic memory having angled third conductor
FR2860910B1 (fr) * 2003-10-10 2006-02-10 Commissariat Energie Atomique Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
US20060281258A1 (en) * 2004-10-06 2006-12-14 Bernard Dieny Magnetic tunnel junction device and writing/reading method for said device
US6911685B2 (en) 2003-10-10 2005-06-28 Hewlett-Packard Development Company, L.P. Thermally-assisted magnetic memory structures
JP5015600B2 (ja) 2003-10-14 2012-08-29 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ 磁気メモリデバイス
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US7522446B2 (en) * 2003-10-31 2009-04-21 Samsung Electronics Co., Ltd. Heating MRAM cells to ease state switching
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US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
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US7057920B2 (en) * 2004-04-26 2006-06-06 Hewlett-Packard Development Company, L.P. Two conductor thermally assisted magnetic memory
US7102921B2 (en) * 2004-05-11 2006-09-05 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7372116B2 (en) 2004-06-16 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
NO20042771D0 (no) * 2004-06-30 2004-06-30 Thin Film Electronics Asa Optimering av driftstemperatur i et ferroelektrisk eller elektret minne
US7061037B2 (en) * 2004-07-06 2006-06-13 Maglabs, Inc. Magnetic random access memory with multiple memory layers and improved memory cell selectivity
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
US7075818B2 (en) * 2004-08-23 2006-07-11 Maglabs, Inc. Magnetic random access memory with stacked memory layers having access lines for writing and reading
FR2880177B1 (fr) * 2004-12-23 2007-05-18 Commissariat Energie Atomique Memoire pmc ayant un temps de retention et une vitesse d'ecriture ameliores
US7196955B2 (en) * 2005-01-12 2007-03-27 Hewlett-Packard Development Company, L.P. Hardmasks for providing thermally assisted switching of magnetic memory elements
US7397074B2 (en) * 2005-01-12 2008-07-08 Samsung Electronics Co., Ltd. RF field heated diodes for providing thermally assisted switching to magnetic memory elements
US7486545B2 (en) * 2005-11-01 2009-02-03 Magic Technologies, Inc. Thermally assisted integrated MRAM design and process for its manufacture
US7633039B2 (en) * 2006-08-31 2009-12-15 Infineon Technologies Ag Sensor device and a method for manufacturing the same
US8100228B2 (en) * 2007-10-12 2012-01-24 D B Industries, Inc. Portable anchorage assembly
FR2922368A1 (fr) * 2007-10-16 2009-04-17 Commissariat Energie Atomique Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree
US7706176B2 (en) * 2008-01-07 2010-04-27 Qimonda Ag Integrated circuit, cell arrangement, method for manufacturing an integrated circuit and for reading a memory cell status, memory module
US7804709B2 (en) * 2008-07-18 2010-09-28 Seagate Technology Llc Diode assisted switching spin-transfer torque memory unit
US8054677B2 (en) 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US8223532B2 (en) 2008-08-07 2012-07-17 Seagate Technology Llc Magnetic field assisted STRAM cells
US7746687B2 (en) 2008-09-30 2010-06-29 Seagate Technology, Llc Thermally assisted multi-bit MRAM
US8487390B2 (en) * 2008-10-08 2013-07-16 Seagate Technology Llc Memory cell with stress-induced anisotropy
US20100091564A1 (en) * 2008-10-10 2010-04-15 Seagate Technology Llc Magnetic stack having reduced switching current
US8217478B2 (en) 2008-10-10 2012-07-10 Seagate Technology Llc Magnetic stack with oxide to reduce switching current
US7978505B2 (en) * 2009-01-29 2011-07-12 Headway Technologies, Inc. Heat assisted switching and separated read-write MRAM
US8053255B2 (en) * 2009-03-03 2011-11-08 Seagate Technology Llc STRAM with compensation element and method of making the same
US7916528B2 (en) * 2009-03-30 2011-03-29 Seagate Technology Llc Predictive thermal preconditioning and timing control for non-volatile memory cells
US8724393B2 (en) * 2011-05-02 2014-05-13 Macronix International Co., Ltd. Thermally assisted flash memory with diode strapping
US8611141B2 (en) 2011-09-21 2013-12-17 Crocus Technology Inc. Magnetic random access memory devices including heating straps
US8611140B2 (en) 2011-09-21 2013-12-17 Crocus Technology Inc. Magnetic random access memory devices including shared heating straps
TW201331937A (zh) * 2011-10-10 2013-08-01 Crocus Technology Inc 利用單一場力線寫入多個磁性隨機存取記憶體單元之裝置、系統及方法
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
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US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
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US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
EP3023803B1 (de) * 2014-11-19 2020-03-18 Crocus Technology S.A. MLU-Messzelle zur Abtastung eines externen Magnetfeldes und magnetische Sensorvorrichtung mit der MLU-Zelle
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US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
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US20220293140A1 (en) * 2021-03-12 2022-09-15 Micron Technology, Inc. Heater devices for microelectronic devices and related microelectronic devices, modules, systems and methods

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Also Published As

Publication number Publication date
EP1225592B1 (de) 2005-10-26
US7339817B2 (en) 2008-03-04
TW519644B (en) 2003-02-01
KR20030009054A (ko) 2003-01-29
KR20080089319A (ko) 2008-10-06
EP1225592A2 (de) 2002-07-24
KR100901488B1 (ko) 2009-06-08
HK1048884B (zh) 2006-12-22
US6603678B2 (en) 2003-08-05
HK1048884A1 (en) 2003-04-17
CN1253895C (zh) 2006-04-26
US20030123282A1 (en) 2003-07-03
DE60114359T2 (de) 2006-06-22
JP2002245774A (ja) 2002-08-30
US20020089874A1 (en) 2002-07-11
EP1225592A3 (de) 2003-01-22
JP4194781B2 (ja) 2008-12-10
CN1365117A (zh) 2002-08-21

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KUHNEN & WACKER PATENT- UND RECHTSANWALTSBUERO, 85

8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, GYEONGGI, KR