NO20042771D0 - Optimering av driftstemperatur i et ferroelektrisk eller elektret minne - Google Patents

Optimering av driftstemperatur i et ferroelektrisk eller elektret minne

Info

Publication number
NO20042771D0
NO20042771D0 NO20042771A NO20042771A NO20042771D0 NO 20042771 D0 NO20042771 D0 NO 20042771D0 NO 20042771 A NO20042771 A NO 20042771A NO 20042771 A NO20042771 A NO 20042771A NO 20042771 D0 NO20042771 D0 NO 20042771D0
Authority
NO
Norway
Prior art keywords
ferroelectric
optimization
operating temperature
electret memory
electret
Prior art date
Application number
NO20042771A
Other languages
English (en)
Inventor
Hans Gude Gudesen
Per Broms
Geirr I Leistad
Per-Erik Nordal
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20042771A priority Critical patent/NO20042771D0/no
Publication of NO20042771D0 publication Critical patent/NO20042771D0/no
Priority to PCT/NO2005/000238 priority patent/WO2006004421A1/en
Priority to US11/168,375 priority patent/US7248524B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5002—Characteristic
NO20042771A 2004-06-30 2004-06-30 Optimering av driftstemperatur i et ferroelektrisk eller elektret minne NO20042771D0 (no)

Priority Applications (3)

Application Number Priority Date Filing Date Title
NO20042771A NO20042771D0 (no) 2004-06-30 2004-06-30 Optimering av driftstemperatur i et ferroelektrisk eller elektret minne
PCT/NO2005/000238 WO2006004421A1 (en) 2004-06-30 2005-06-29 Operating temperature optimization in a ferroelectric or electret memory
US11/168,375 US7248524B2 (en) 2004-06-30 2005-06-29 Operating temperature optimization in a ferroelectric or electret memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20042771A NO20042771D0 (no) 2004-06-30 2004-06-30 Optimering av driftstemperatur i et ferroelektrisk eller elektret minne

Publications (1)

Publication Number Publication Date
NO20042771D0 true NO20042771D0 (no) 2004-06-30

Family

ID=35005987

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20042771A NO20042771D0 (no) 2004-06-30 2004-06-30 Optimering av driftstemperatur i et ferroelektrisk eller elektret minne

Country Status (3)

Country Link
US (1) US7248524B2 (no)
NO (1) NO20042771D0 (no)
WO (1) WO2006004421A1 (no)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7761191B1 (en) * 2006-12-12 2010-07-20 Nvidia Corporation Management of operation of an integrated circuit
WO2009081225A1 (en) * 2007-12-24 2009-07-02 Nokia Corporation Thermal sensors for stacked dies
US9490003B2 (en) 2011-03-31 2016-11-08 Intel Corporation Induced thermal gradients
US9658678B2 (en) 2011-03-31 2017-05-23 Intel Corporation Induced thermal gradients
US8724393B2 (en) * 2011-05-02 2014-05-13 Macronix International Co., Ltd. Thermally assisted flash memory with diode strapping
EP2761620B1 (en) * 2011-09-30 2020-04-29 Intel Corporation Dynamic operations for 3d stacked memory using thermal data
WO2013095674A1 (en) * 2011-12-23 2013-06-27 Intel Corporation Memory operations using system thermal sensor data
US8543967B2 (en) * 2012-02-24 2013-09-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Computer system and method for determining a temperature rise in direct current (DC) lines caused by joule heating of nearby alternating current (AC) lines
KR102123991B1 (ko) * 2013-03-11 2020-06-17 삼성전자주식회사 반도체 패키지 및 이를 구비하는 전자 시스템
US9627406B1 (en) * 2015-09-26 2017-04-18 The United States Of America, As Represented By The Secretary Of Commerce Memory cell including electret and random access memory thereof
US10832713B2 (en) * 2018-11-28 2020-11-10 International Business Machines Corporation Multichannel tape recording device having calibrated span of transducers
WO2023164071A1 (en) * 2022-02-23 2023-08-31 The Regents Of The University Of Michigan Epitaxial nitride ferroelectronic devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3224930B2 (ja) * 1993-12-28 2001-11-05 株式会社東芝 半導体装置の再生方法
US5635812A (en) 1994-09-29 1997-06-03 Motorola, Inc. Thermal sensing polymeric capacitor
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
US6060692A (en) * 1998-09-02 2000-05-09 Cts Corporation Low power compact heater for piezoelectric device
DE19852430C2 (de) 1998-11-13 2000-09-14 Siemens Ag Schaltungsanordnung mit temperaturabhängiger Halbleiterbauelement-Test- und Reparaturlogik
US6009033A (en) 1998-11-24 1999-12-28 Advanced Micro Devices, Inc. Method of programming and erasing an EEPROM device under an elevated temperature and apparatus thereof
JP3228267B2 (ja) 1999-04-27 2001-11-12 日本電気株式会社 電子デバイス
US6603678B2 (en) * 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
NO317905B1 (no) 2002-09-11 2004-12-27 Thin Film Electronics Asa Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art
US6906941B2 (en) * 2003-07-22 2005-06-14 Hewlett-Packard Development Company, L.P. Magnetic memory structure
US7079438B2 (en) * 2004-02-17 2006-07-18 Hewlett-Packard Development Company, L.P. Controlled temperature, thermal-assisted magnetic memory device

Also Published As

Publication number Publication date
US20060007722A1 (en) 2006-01-12
US7248524B2 (en) 2007-07-24
WO2006004421A1 (en) 2006-01-12

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