DE4103594A1 - Verfahren zur herstellung von bipolaren polyemitter-transistoren - Google Patents
Verfahren zur herstellung von bipolaren polyemitter-transistorenInfo
- Publication number
- DE4103594A1 DE4103594A1 DE4103594A DE4103594A DE4103594A1 DE 4103594 A1 DE4103594 A1 DE 4103594A1 DE 4103594 A DE4103594 A DE 4103594A DE 4103594 A DE4103594 A DE 4103594A DE 4103594 A1 DE4103594 A1 DE 4103594A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- forming
- oxide layer
- etching
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title description 7
- 238000000034 method Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims description 4
- 230000037431 insertion Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900013935A KR920007124A (ko) | 1990-09-04 | 1990-09-04 | 폴리 에미터 바이폴라 트랜지스터의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE4103594A1 true DE4103594A1 (de) | 1992-03-05 |
Family
ID=19303215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4103594A Ceased DE4103594A1 (de) | 1990-09-04 | 1991-02-04 | Verfahren zur herstellung von bipolaren polyemitter-transistoren |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0629302A (ja) |
KR (1) | KR920007124A (ja) |
DE (1) | DE4103594A1 (ja) |
FR (1) | FR2666450A1 (ja) |
GB (1) | GB2247780A (ja) |
IT (1) | IT1245092B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4240738A1 (en) * | 1992-12-03 | 1993-08-26 | Siemens Ag | Bipolar transistor prodn. for long service life - by forming base in surface of substrate, short term temp. adjusting, and forming emitter |
US7737049B2 (en) | 2007-07-31 | 2010-06-15 | Qimonda Ag | Method for forming a structure on a substrate and device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995002898A1 (en) * | 1993-07-12 | 1995-01-26 | National Semiconductor Corporation | Process for fabricating semiconductor devices having arsenic emitters |
KR19980054454A (ko) * | 1996-12-27 | 1998-09-25 | 김영환 | 폴리실키콘층 형성 방법 |
US6093613A (en) * | 1998-02-09 | 2000-07-25 | Chartered Semiconductor Manufacturing, Ltd | Method for making high gain lateral PNP and NPN bipolar transistor compatible with CMOS for making BICMOS circuits |
KR100382725B1 (ko) * | 2000-11-24 | 2003-05-09 | 삼성전자주식회사 | 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4432809A (en) * | 1981-12-31 | 1984-02-21 | International Business Machines Corporation | Method for reducing oxygen precipitation in silicon wafers |
DE3304642A1 (de) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung mit bipolartransistor-strukturen und verfahren zu ihrer herstellung |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0062725B1 (de) * | 1981-04-14 | 1984-09-12 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen eines integrierten Planartransistors |
DE3580206D1 (de) * | 1984-07-31 | 1990-11-29 | Toshiba Kawasaki Kk | Bipolarer transistor und verfahren zu seiner herstellung. |
KR880000483B1 (ko) * | 1985-08-05 | 1988-04-07 | 재단법인 한국전자통신 연구소 | 반도체소자의 제조방법 |
US4693782A (en) * | 1985-09-06 | 1987-09-15 | Matsushita Electric Industrial Co., Ltd. | Fabrication method of semiconductor device |
DE3787110D1 (de) * | 1986-03-21 | 1993-09-30 | Siemens Ag | Verfahren zur Herstellung einer Bipolartransistorstruktur für Höchstgeschwindigkeitsschaltung. |
JPS6353928A (ja) * | 1986-08-22 | 1988-03-08 | Anelva Corp | ドライエツチング方法 |
US4839302A (en) * | 1986-10-13 | 1989-06-13 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating bipolar semiconductor device |
JPS63182860A (ja) * | 1987-01-26 | 1988-07-28 | Toshiba Corp | 半導体装置とその製造方法 |
JP2654011B2 (ja) * | 1987-03-31 | 1997-09-17 | 株式会社東芝 | 半導体装置の製造方法 |
JPH01157565A (ja) * | 1987-12-14 | 1989-06-20 | Nec Corp | Bi−MOS集積回路装置の製造方法 |
JPH0736389B2 (ja) * | 1988-11-10 | 1995-04-19 | 三菱電機株式会社 | 半導体装置の電極配線の形成方法 |
-
1990
- 1990-09-04 KR KR1019900013935A patent/KR920007124A/ko not_active Application Discontinuation
-
1991
- 1991-01-04 FR FR9100086A patent/FR2666450A1/fr active Granted
- 1991-01-11 IT ITMI910068A patent/IT1245092B/it active IP Right Grant
- 1991-01-11 GB GB9100672A patent/GB2247780A/en not_active Withdrawn
- 1991-02-04 DE DE4103594A patent/DE4103594A1/de not_active Ceased
- 1991-09-04 JP JP3253022A patent/JPH0629302A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4432809A (en) * | 1981-12-31 | 1984-02-21 | International Business Machines Corporation | Method for reducing oxygen precipitation in silicon wafers |
DE3304642A1 (de) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung mit bipolartransistor-strukturen und verfahren zu ihrer herstellung |
Non-Patent Citations (1)
Title |
---|
JP 2-197 133 A. In: Patents Abstr. of Japan, Sect. E. Vol. 14 (1990), Nr. 479 (E-992) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4240738A1 (en) * | 1992-12-03 | 1993-08-26 | Siemens Ag | Bipolar transistor prodn. for long service life - by forming base in surface of substrate, short term temp. adjusting, and forming emitter |
US7737049B2 (en) | 2007-07-31 | 2010-06-15 | Qimonda Ag | Method for forming a structure on a substrate and device |
Also Published As
Publication number | Publication date |
---|---|
FR2666450B1 (ja) | 1993-02-26 |
GB9100672D0 (en) | 1991-02-27 |
KR920007124A (ko) | 1992-04-28 |
ITMI910068A0 (it) | 1991-01-11 |
ITMI910068A1 (it) | 1992-07-11 |
GB2247780A (en) | 1992-03-11 |
FR2666450A1 (fr) | 1992-03-06 |
JPH0629302A (ja) | 1994-02-04 |
IT1245092B (it) | 1994-09-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8131 | Rejection |