FR2666450B1 - - Google Patents
Info
- Publication number
- FR2666450B1 FR2666450B1 FR9100086A FR9100086A FR2666450B1 FR 2666450 B1 FR2666450 B1 FR 2666450B1 FR 9100086 A FR9100086 A FR 9100086A FR 9100086 A FR9100086 A FR 9100086A FR 2666450 B1 FR2666450 B1 FR 2666450B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900013935A KR920007124A (ko) | 1990-09-04 | 1990-09-04 | 폴리 에미터 바이폴라 트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2666450A1 FR2666450A1 (fr) | 1992-03-06 |
FR2666450B1 true FR2666450B1 (ja) | 1993-02-26 |
Family
ID=19303215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9100086A Granted FR2666450A1 (fr) | 1990-09-04 | 1991-01-04 | Procede pour fabriquer un transistor bipolaire a emetteurs multiples. |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0629302A (ja) |
KR (1) | KR920007124A (ja) |
DE (1) | DE4103594A1 (ja) |
FR (1) | FR2666450A1 (ja) |
GB (1) | GB2247780A (ja) |
IT (1) | IT1245092B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4240738A1 (en) * | 1992-12-03 | 1993-08-26 | Siemens Ag | Bipolar transistor prodn. for long service life - by forming base in surface of substrate, short term temp. adjusting, and forming emitter |
WO1995002898A1 (en) * | 1993-07-12 | 1995-01-26 | National Semiconductor Corporation | Process for fabricating semiconductor devices having arsenic emitters |
KR19980054454A (ko) * | 1996-12-27 | 1998-09-25 | 김영환 | 폴리실키콘층 형성 방법 |
US6093613A (en) * | 1998-02-09 | 2000-07-25 | Chartered Semiconductor Manufacturing, Ltd | Method for making high gain lateral PNP and NPN bipolar transistor compatible with CMOS for making BICMOS circuits |
KR100382725B1 (ko) * | 2000-11-24 | 2003-05-09 | 삼성전자주식회사 | 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법 |
US7737049B2 (en) | 2007-07-31 | 2010-06-15 | Qimonda Ag | Method for forming a structure on a substrate and device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0062725B1 (de) * | 1981-04-14 | 1984-09-12 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen eines integrierten Planartransistors |
EP0099878B1 (en) * | 1981-12-31 | 1989-03-22 | International Business Machines Corporation | Method for reducing oxygen precipitation in silicon wafers |
DE3304642A1 (de) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung mit bipolartransistor-strukturen und verfahren zu ihrer herstellung |
DE3580206D1 (de) * | 1984-07-31 | 1990-11-29 | Toshiba Kawasaki Kk | Bipolarer transistor und verfahren zu seiner herstellung. |
KR880000483B1 (ko) * | 1985-08-05 | 1988-04-07 | 재단법인 한국전자통신 연구소 | 반도체소자의 제조방법 |
US4693782A (en) * | 1985-09-06 | 1987-09-15 | Matsushita Electric Industrial Co., Ltd. | Fabrication method of semiconductor device |
DE3787110D1 (de) * | 1986-03-21 | 1993-09-30 | Siemens Ag | Verfahren zur Herstellung einer Bipolartransistorstruktur für Höchstgeschwindigkeitsschaltung. |
JPS6353928A (ja) * | 1986-08-22 | 1988-03-08 | Anelva Corp | ドライエツチング方法 |
US4839302A (en) * | 1986-10-13 | 1989-06-13 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating bipolar semiconductor device |
JPS63182860A (ja) * | 1987-01-26 | 1988-07-28 | Toshiba Corp | 半導体装置とその製造方法 |
JP2654011B2 (ja) * | 1987-03-31 | 1997-09-17 | 株式会社東芝 | 半導体装置の製造方法 |
JPH01157565A (ja) * | 1987-12-14 | 1989-06-20 | Nec Corp | Bi−MOS集積回路装置の製造方法 |
JPH0736389B2 (ja) * | 1988-11-10 | 1995-04-19 | 三菱電機株式会社 | 半導体装置の電極配線の形成方法 |
-
1990
- 1990-09-04 KR KR1019900013935A patent/KR920007124A/ko not_active Application Discontinuation
-
1991
- 1991-01-04 FR FR9100086A patent/FR2666450A1/fr active Granted
- 1991-01-11 IT ITMI910068A patent/IT1245092B/it active IP Right Grant
- 1991-01-11 GB GB9100672A patent/GB2247780A/en not_active Withdrawn
- 1991-02-04 DE DE4103594A patent/DE4103594A1/de not_active Ceased
- 1991-09-04 JP JP3253022A patent/JPH0629302A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB9100672D0 (en) | 1991-02-27 |
KR920007124A (ko) | 1992-04-28 |
ITMI910068A0 (it) | 1991-01-11 |
ITMI910068A1 (it) | 1992-07-11 |
GB2247780A (en) | 1992-03-11 |
FR2666450A1 (fr) | 1992-03-06 |
JPH0629302A (ja) | 1994-02-04 |
DE4103594A1 (de) | 1992-03-05 |
IT1245092B (it) | 1994-09-13 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |