FR2666450A1 - Procede pour fabriquer un transistor bipolaire a emetteurs multiples. - Google Patents
Procede pour fabriquer un transistor bipolaire a emetteurs multiples. Download PDFInfo
- Publication number
- FR2666450A1 FR2666450A1 FR9100086A FR9100086A FR2666450A1 FR 2666450 A1 FR2666450 A1 FR 2666450A1 FR 9100086 A FR9100086 A FR 9100086A FR 9100086 A FR9100086 A FR 9100086A FR 2666450 A1 FR2666450 A1 FR 2666450A1
- Authority
- FR
- France
- Prior art keywords
- layer
- forming
- oxide layer
- region
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 229920005591 polysilicon Polymers 0.000 claims abstract description 30
- 238000005468 ion implantation Methods 0.000 claims abstract description 15
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000008188 pellet Substances 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
- 238000000206 photolithography Methods 0.000 claims description 9
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 7
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 238000011282 treatment Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 210000002381 plasma Anatomy 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- -1 ion ion Chemical class 0.000 description 3
- 239000007943 implant Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 244000309466 calf Species 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011866 long-term treatment Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000003826 tablet Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900013935A KR920007124A (ko) | 1990-09-04 | 1990-09-04 | 폴리 에미터 바이폴라 트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2666450A1 true FR2666450A1 (fr) | 1992-03-06 |
FR2666450B1 FR2666450B1 (ja) | 1993-02-26 |
Family
ID=19303215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9100086A Granted FR2666450A1 (fr) | 1990-09-04 | 1991-01-04 | Procede pour fabriquer un transistor bipolaire a emetteurs multiples. |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0629302A (ja) |
KR (1) | KR920007124A (ja) |
DE (1) | DE4103594A1 (ja) |
FR (1) | FR2666450A1 (ja) |
GB (1) | GB2247780A (ja) |
IT (1) | IT1245092B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4240738A1 (en) * | 1992-12-03 | 1993-08-26 | Siemens Ag | Bipolar transistor prodn. for long service life - by forming base in surface of substrate, short term temp. adjusting, and forming emitter |
WO1995002898A1 (en) * | 1993-07-12 | 1995-01-26 | National Semiconductor Corporation | Process for fabricating semiconductor devices having arsenic emitters |
KR19980054454A (ko) * | 1996-12-27 | 1998-09-25 | 김영환 | 폴리실키콘층 형성 방법 |
US6093613A (en) * | 1998-02-09 | 2000-07-25 | Chartered Semiconductor Manufacturing, Ltd | Method for making high gain lateral PNP and NPN bipolar transistor compatible with CMOS for making BICMOS circuits |
KR100382725B1 (ko) * | 2000-11-24 | 2003-05-09 | 삼성전자주식회사 | 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법 |
US7737049B2 (en) | 2007-07-31 | 2010-06-15 | Qimonda Ag | Method for forming a structure on a substrate and device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0170250A2 (en) * | 1984-07-31 | 1986-02-05 | Kabushiki Kaisha Toshiba | Bipolar transistor and method for producing the bipolar transistor |
US4686762A (en) * | 1985-08-05 | 1987-08-18 | Electronics And Telecommunication Research Institute | Fabricating semiconductor device with polysilicon protection layer during processing |
US4693782A (en) * | 1985-09-06 | 1987-09-15 | Matsushita Electric Industrial Co., Ltd. | Fabrication method of semiconductor device |
EP0239825A1 (de) * | 1986-03-21 | 1987-10-07 | Siemens Aktiengesellschaft | Verfahren zur Herstellung einer Bipolartransistorstruktur für Höchstgeschwindigkeitsschaltung |
US4839302A (en) * | 1986-10-13 | 1989-06-13 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating bipolar semiconductor device |
US4882290A (en) * | 1987-01-26 | 1989-11-21 | Kabushiki Kaisha Toshiba | Semiconductor device and a method of manufacturing the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0062725B1 (de) * | 1981-04-14 | 1984-09-12 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen eines integrierten Planartransistors |
EP0099878B1 (en) * | 1981-12-31 | 1989-03-22 | International Business Machines Corporation | Method for reducing oxygen precipitation in silicon wafers |
DE3304642A1 (de) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung mit bipolartransistor-strukturen und verfahren zu ihrer herstellung |
JPS6353928A (ja) * | 1986-08-22 | 1988-03-08 | Anelva Corp | ドライエツチング方法 |
JP2654011B2 (ja) * | 1987-03-31 | 1997-09-17 | 株式会社東芝 | 半導体装置の製造方法 |
JPH01157565A (ja) * | 1987-12-14 | 1989-06-20 | Nec Corp | Bi−MOS集積回路装置の製造方法 |
JPH0736389B2 (ja) * | 1988-11-10 | 1995-04-19 | 三菱電機株式会社 | 半導体装置の電極配線の形成方法 |
-
1990
- 1990-09-04 KR KR1019900013935A patent/KR920007124A/ko not_active Application Discontinuation
-
1991
- 1991-01-04 FR FR9100086A patent/FR2666450A1/fr active Granted
- 1991-01-11 IT ITMI910068A patent/IT1245092B/it active IP Right Grant
- 1991-01-11 GB GB9100672A patent/GB2247780A/en not_active Withdrawn
- 1991-02-04 DE DE4103594A patent/DE4103594A1/de not_active Ceased
- 1991-09-04 JP JP3253022A patent/JPH0629302A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0170250A2 (en) * | 1984-07-31 | 1986-02-05 | Kabushiki Kaisha Toshiba | Bipolar transistor and method for producing the bipolar transistor |
US4686762A (en) * | 1985-08-05 | 1987-08-18 | Electronics And Telecommunication Research Institute | Fabricating semiconductor device with polysilicon protection layer during processing |
US4693782A (en) * | 1985-09-06 | 1987-09-15 | Matsushita Electric Industrial Co., Ltd. | Fabrication method of semiconductor device |
EP0239825A1 (de) * | 1986-03-21 | 1987-10-07 | Siemens Aktiengesellschaft | Verfahren zur Herstellung einer Bipolartransistorstruktur für Höchstgeschwindigkeitsschaltung |
US4839302A (en) * | 1986-10-13 | 1989-06-13 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating bipolar semiconductor device |
US4882290A (en) * | 1987-01-26 | 1989-11-21 | Kabushiki Kaisha Toshiba | Semiconductor device and a method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
FR2666450B1 (ja) | 1993-02-26 |
GB9100672D0 (en) | 1991-02-27 |
KR920007124A (ko) | 1992-04-28 |
ITMI910068A0 (it) | 1991-01-11 |
ITMI910068A1 (it) | 1992-07-11 |
GB2247780A (en) | 1992-03-11 |
JPH0629302A (ja) | 1994-02-04 |
DE4103594A1 (de) | 1992-03-05 |
IT1245092B (it) | 1994-09-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5700333A (en) | Thin-film photoelectric conversion device and a method of manufacturing the same | |
EP0098775B1 (fr) | Procédé de réalisation de l'oxyde de champ d'un circuit intégré | |
EP0013342B1 (fr) | Procédé de fabrication de transistors à effet de champ auto-alignés du type métal-semi-conducteur | |
JPH07105454B2 (ja) | ショットキーバイポーラトランジスタを有するcmos構造を製造する方法 | |
FR2476911A1 (fr) | Procede de fabrication de transistors bipolaires complementaires et de dispositifs mos a symetrie complementaire a electrodes de commande polycristallines | |
CA1148273A (en) | Consumable amorphous or polysilicon emitter process | |
IE55653B1 (en) | Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method | |
JPS60201666A (ja) | 半導体装置 | |
JPH0785470B2 (ja) | デバイスの製造方法 | |
FR2666450A1 (fr) | Procede pour fabriquer un transistor bipolaire a emetteurs multiples. | |
JPH08293465A (ja) | 半導体装置の製造方法 | |
EP0021931B1 (fr) | Procédé d'auto-alignement de régions différemment dopées d'une structure de semiconducteur, et application du procédé à la fabrication d'un transistor | |
FR2606212A1 (fr) | Procede de fabrication d'un composant bicmos | |
US4968635A (en) | Method of forming emitter of a bipolar transistor in monocrystallized film | |
JP2001284282A (ja) | バイポーラ半導体装置の製造方法 | |
CN110335817B (zh) | 一种肖特基的制造方法 | |
JP2874234B2 (ja) | 半導体装置の製造方法 | |
JPS6220711B2 (ja) | ||
JPH06151896A (ja) | 半導体装置の製造方法 | |
JP3251030B2 (ja) | 半導体装置の製造方法 | |
EP0383816B1 (en) | Process methodology for two-sided fabrication of devices on thinned silicon | |
EP0534530B1 (en) | Method of manufacturing a device whereby a substance is implanted into a body | |
EP0544369A2 (en) | Method for processing porous silicon to recover luminescence | |
JPH0480961A (ja) | ショットキバリアダイオード | |
JP3038961B2 (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |