DE3881264D1 - Gate-steuerbare bilaterale halbleiterschaltungsanordnung. - Google Patents

Gate-steuerbare bilaterale halbleiterschaltungsanordnung.

Info

Publication number
DE3881264D1
DE3881264D1 DE8888105056T DE3881264T DE3881264D1 DE 3881264 D1 DE3881264 D1 DE 3881264D1 DE 8888105056 T DE8888105056 T DE 8888105056T DE 3881264 T DE3881264 T DE 3881264T DE 3881264 D1 DE3881264 D1 DE 3881264D1
Authority
DE
Germany
Prior art keywords
circuit arrangement
semiconductor circuit
gate controllable
bilateral semiconductor
controllable bilateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888105056T
Other languages
English (en)
Other versions
DE3881264T2 (de
Inventor
Minoru Kato
Junichi Miwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3881264D1 publication Critical patent/DE3881264D1/de
Publication of DE3881264T2 publication Critical patent/DE3881264T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE88105056T 1987-03-31 1988-03-29 Gate-steuerbare bilaterale Halbleiterschaltungsanordnung. Expired - Fee Related DE3881264T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7618587 1987-03-31
JP62325690A JPS64759A (en) 1987-03-31 1987-12-23 Semiconductor for two-way controlled rectification

Publications (2)

Publication Number Publication Date
DE3881264D1 true DE3881264D1 (de) 1993-07-01
DE3881264T2 DE3881264T2 (de) 1993-11-25

Family

ID=26417334

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88105056T Expired - Fee Related DE3881264T2 (de) 1987-03-31 1988-03-29 Gate-steuerbare bilaterale Halbleiterschaltungsanordnung.

Country Status (5)

Country Link
US (1) US4994884A (de)
EP (1) EP0287856B1 (de)
JP (1) JPS64759A (de)
KR (1) KR920000639B1 (de)
DE (1) DE3881264T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01286465A (ja) * 1988-05-13 1989-11-17 Toshiba Corp 双方向制御整流半導体装置
JPH0680821B2 (ja) * 1989-05-01 1994-10-12 株式会社東芝 高感度トライアック
FR2697674B1 (fr) * 1992-10-29 1995-01-13 Sgs Thomson Microelectronics Thyristor et assemblage de thyristors à cathode commune.
FR2708811B1 (fr) * 1993-08-06 1995-10-20 Sgs Thomson Microelectronics Thyristor à amplification de gachette à courant de maintien accru.
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
JP3352349B2 (ja) * 1997-02-24 2002-12-03 シャープ株式会社 双方向サイリスタ素子
US6194290B1 (en) 1998-03-09 2001-02-27 Intersil Corporation Methods for making semiconductor devices by low temperature direct bonding
US6153495A (en) * 1998-03-09 2000-11-28 Intersil Corporation Advanced methods for making semiconductor devices by low temperature direct bonding
US6274892B1 (en) 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
FR2797525B1 (fr) * 1999-08-09 2001-10-12 St Microelectronics Sa Commutateur bidirectionnel a performances en commutation ameliorees
FR2818805B1 (fr) * 2000-12-21 2003-04-04 St Microelectronics Sa Commutateur statique bidirectionnel sensible
FR2819102B1 (fr) * 2000-12-29 2003-04-04 St Microelectronics Sa Commutateur electronique bidirectionnel bistable a commande par impulsions
FR2834386B1 (fr) * 2001-12-28 2004-04-02 St Microelectronics Sa Interrupteur bidirectionnel commande en tension
FR2864343A1 (fr) * 2003-12-19 2005-06-24 St Microelectronics Sa Triac fonctionnant dans les quadrants q1 et q4
US7612387B2 (en) * 2005-12-16 2009-11-03 Stmicroelectronics S.A. Thyristor optimized for a sinusoidal HF control
EP2819174B1 (de) * 2013-06-24 2016-10-26 Silergy Corp. Thyristor, Verfahren zum Auslösen eines Thyristors und Thyristorschaltungen

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4286279A (en) * 1976-09-20 1981-08-25 Hutson Jearld L Multilayer semiconductor switching devices
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
GB2057188B (en) * 1979-08-22 1983-10-19 Texas Instruments Ltd Semiconductor switch device for a-c power control
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE3118317A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb
JPS583280A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ
JPS59132167A (ja) * 1983-01-18 1984-07-30 Toshiba Corp 半導体装置
IT1212799B (it) * 1983-12-15 1989-11-30 Ates Componenti Elettron Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ

Also Published As

Publication number Publication date
EP0287856B1 (de) 1993-05-26
DE3881264T2 (de) 1993-11-25
KR880011932A (ko) 1988-10-31
JPH0470786B2 (de) 1992-11-11
KR920000639B1 (ko) 1992-01-17
EP0287856A1 (de) 1988-10-26
US4994884A (en) 1991-02-19
JPS64759A (en) 1989-01-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee