IT1212799B - Dispositivo elettronico ad interruttore comandato per la soppressione di transitori. - Google Patents

Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.

Info

Publication number
IT1212799B
IT1212799B IT8324197A IT2419783A IT1212799B IT 1212799 B IT1212799 B IT 1212799B IT 8324197 A IT8324197 A IT 8324197A IT 2419783 A IT2419783 A IT 2419783A IT 1212799 B IT1212799 B IT 1212799B
Authority
IT
Italy
Prior art keywords
transitors
suppression
electronic device
controlled switch
switch
Prior art date
Application number
IT8324197A
Other languages
English (en)
Other versions
IT8324197A0 (it
Inventor
Franco Bertotti
Paolo Ferrari
Mario Furoni
Sergio Garue
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT8324197A priority Critical patent/IT1212799B/it
Publication of IT8324197A0 publication Critical patent/IT8324197A0/it
Priority to EP84114463A priority patent/EP0146040B1/en
Priority to DE8484114463T priority patent/DE3485878T2/de
Priority to US06/677,763 priority patent/US4614962A/en
Priority to JP59257275A priority patent/JPS60145661A/ja
Application granted granted Critical
Publication of IT1212799B publication Critical patent/IT1212799B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Dc-Dc Converters (AREA)
IT8324197A 1983-12-15 1983-12-15 Dispositivo elettronico ad interruttore comandato per la soppressione di transitori. IT1212799B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8324197A IT1212799B (it) 1983-12-15 1983-12-15 Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
EP84114463A EP0146040B1 (en) 1983-12-15 1984-11-29 Controlled electronic switching device for the suppression of transients
DE8484114463T DE3485878T2 (de) 1983-12-15 1984-11-29 Gesteuerte elektronische schaltanordnung zur unterdrueckung von ausgleichsvorgaengen.
US06/677,763 US4614962A (en) 1983-12-15 1984-12-03 Controlled electronic switching device for the suppression of transients
JP59257275A JPS60145661A (ja) 1983-12-15 1984-12-04 制御型電子スイツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8324197A IT1212799B (it) 1983-12-15 1983-12-15 Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.

Publications (2)

Publication Number Publication Date
IT8324197A0 IT8324197A0 (it) 1983-12-15
IT1212799B true IT1212799B (it) 1989-11-30

Family

ID=11212493

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8324197A IT1212799B (it) 1983-12-15 1983-12-15 Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.

Country Status (5)

Country Link
US (1) US4614962A (it)
EP (1) EP0146040B1 (it)
JP (1) JPS60145661A (it)
DE (1) DE3485878T2 (it)
IT (1) IT1212799B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2586141B1 (fr) * 1985-08-06 1987-11-20 Thomson Csf Thyristor sensible a decouplage gachette-cathode integre
JPS64759A (en) * 1987-03-31 1989-01-05 Toshiba Corp Semiconductor for two-way controlled rectification
DE3835569A1 (de) * 1988-10-19 1990-05-03 Telefunken Electronic Gmbh Schutzanordnung
JP3299374B2 (ja) * 1994-02-24 2002-07-08 三菱電機株式会社 サイリスタ及びその製造方法
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US10277268B2 (en) * 2017-06-02 2019-04-30 Psemi Corporation Method and apparatus for switching of shunt and through switches of a transceiver
CN113675832B (zh) * 2021-10-22 2022-02-08 武汉市聚芯微电子有限责任公司 静电保护方法、静电保护电路及芯片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502482A (it) * 1973-05-08 1975-01-11
BG18676A1 (it) * 1973-05-09 1975-03-20
CH614811A5 (en) * 1977-04-15 1979-12-14 Bbc Brown Boveri & Cie Thyristor
CH622127A5 (it) * 1977-12-21 1981-03-13 Bbc Brown Boveri & Cie
GB2057188B (en) * 1979-08-22 1983-10-19 Texas Instruments Ltd Semiconductor switch device for a-c power control
JPS5739574A (en) * 1980-08-22 1982-03-04 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
EP0146040A3 (en) 1987-09-02
DE3485878T2 (de) 1993-03-25
EP0146040A2 (en) 1985-06-26
DE3485878D1 (de) 1992-09-24
US4614962A (en) 1986-09-30
JPS60145661A (ja) 1985-08-01
IT8324197A0 (it) 1983-12-15
EP0146040B1 (en) 1992-08-19

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227