DE3867587D1 - Halbleiterschaltungsvorrichtung. - Google Patents

Halbleiterschaltungsvorrichtung.

Info

Publication number
DE3867587D1
DE3867587D1 DE8888116579T DE3867587T DE3867587D1 DE 3867587 D1 DE3867587 D1 DE 3867587D1 DE 8888116579 T DE8888116579 T DE 8888116579T DE 3867587 T DE3867587 T DE 3867587T DE 3867587 D1 DE3867587 D1 DE 3867587D1
Authority
DE
Germany
Prior art keywords
circuit device
semiconductor circuit
semiconductor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888116579T
Other languages
English (en)
Inventor
Takashi Akioka
Atsuo Watanabe
Takahiro Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3867587D1 publication Critical patent/DE3867587D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
DE8888116579T 1987-10-09 1988-10-06 Halbleiterschaltungsvorrichtung. Expired - Lifetime DE3867587D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62253700A JPH0197013A (ja) 1987-10-09 1987-10-09 半導体回路装置

Publications (1)

Publication Number Publication Date
DE3867587D1 true DE3867587D1 (de) 1992-02-20

Family

ID=17254936

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888116579T Expired - Lifetime DE3867587D1 (de) 1987-10-09 1988-10-06 Halbleiterschaltungsvorrichtung.

Country Status (5)

Country Link
US (1) US4948994A (de)
EP (1) EP0311083B1 (de)
JP (1) JPH0197013A (de)
CA (1) CA1310375C (de)
DE (1) DE3867587D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2553632B2 (ja) * 1988-05-16 1996-11-13 松下電器産業株式会社 バイモス型論理回路
EP0387463A1 (de) 1989-03-14 1990-09-19 International Business Machines Corporation Komplementäre Emitterfolger-Treiber
US4999523A (en) * 1989-12-05 1991-03-12 Hewlett-Packard Company BICMOS logic gate with higher pull-up voltage
US5247207A (en) * 1989-12-20 1993-09-21 National Semiconductor Corporation Signal bus line driver circuit
US5089727A (en) * 1990-04-02 1992-02-18 Motorola, Inc. Pulsed driver circuit
JP2607394B2 (ja) * 1990-11-01 1997-05-07 株式会社日立製作所 非反転バッファ装置および半導体記憶装置
US5604417A (en) * 1991-12-19 1997-02-18 Hitachi, Ltd. Semiconductor integrated circuit device
US5243237A (en) * 1992-01-22 1993-09-07 Samsung Semiconductor, Inc. Noninverting bi-cmos gates with propagation delays of a single bi-cmos inverter
GB9222455D0 (en) * 1992-10-26 1992-12-09 Philips Electronics Uk Ltd A current sensing circuit
FR2849536B1 (fr) * 2002-12-27 2007-02-23 St Microelectronics Sa Circuit d'interface de fourniture de tension

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3443122A (en) * 1965-11-03 1969-05-06 Gen Dynamics Corp Gating circuit utilizing junction type field effect transistor as input driver to gate driver
FR1465699A (fr) * 1965-12-03 1967-01-13 Csf Circuits logiques à transistors à effet de champ
GB1251693A (de) * 1968-02-29 1971-10-27
DE1765454C3 (de) * 1968-05-21 1975-07-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung mit einem an einen Impulsgenerator angeschlossenen Hallgenerator
JPS5630961B2 (de) * 1973-09-10 1981-07-18
DE2511488A1 (de) * 1975-03-15 1976-09-23 Bosch Gmbh Robert Cmos-inverter
JPS5919435A (ja) * 1982-07-23 1984-01-31 Hitachi Ltd 半導体集積回路装置
JPS5925424A (ja) * 1982-08-04 1984-02-09 Hitachi Ltd ゲ−ト回路
KR890004212B1 (en) * 1983-07-08 1989-10-27 Fujitsu Ltd Complementary logic circuit
JPS6016022A (ja) * 1983-07-08 1985-01-26 Fujitsu Ltd コンプリメンタリロジツク回路
JPS6051326A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd 半導体集積回路装置
US4590395A (en) * 1984-07-20 1986-05-20 Honeywell Inc. FET-bipolar drive circuit
JPH0685498B2 (ja) * 1984-08-24 1994-10-26 株式会社日立製作所 論理回路
JPS61289723A (ja) * 1985-06-18 1986-12-19 Nec Corp 高電圧デイジタル制御信号出力回路
EP0433271A3 (en) * 1985-07-22 1991-11-06 Hitachi, Ltd. Semiconductor device
JPS6193655A (ja) * 1985-09-30 1986-05-12 Hitachi Ltd 半導体装置
US4962181A (en) * 1989-05-08 1990-10-09 Hoechst Celanese Corp. Polyamide polymer having 12-F fluorine-containing linking groups

Also Published As

Publication number Publication date
JPH0197013A (ja) 1989-04-14
US4948994A (en) 1990-08-14
EP0311083A3 (en) 1990-03-07
EP0311083B1 (de) 1992-01-08
CA1310375C (en) 1992-11-17
EP0311083A2 (de) 1989-04-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee