DE3867587D1 - Halbleiterschaltungsvorrichtung. - Google Patents
Halbleiterschaltungsvorrichtung.Info
- Publication number
- DE3867587D1 DE3867587D1 DE8888116579T DE3867587T DE3867587D1 DE 3867587 D1 DE3867587 D1 DE 3867587D1 DE 8888116579 T DE8888116579 T DE 8888116579T DE 3867587 T DE3867587 T DE 3867587T DE 3867587 D1 DE3867587 D1 DE 3867587D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit device
- semiconductor circuit
- semiconductor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62253700A JPH0197013A (ja) | 1987-10-09 | 1987-10-09 | 半導体回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3867587D1 true DE3867587D1 (de) | 1992-02-20 |
Family
ID=17254936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888116579T Expired - Lifetime DE3867587D1 (de) | 1987-10-09 | 1988-10-06 | Halbleiterschaltungsvorrichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4948994A (de) |
EP (1) | EP0311083B1 (de) |
JP (1) | JPH0197013A (de) |
CA (1) | CA1310375C (de) |
DE (1) | DE3867587D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2553632B2 (ja) * | 1988-05-16 | 1996-11-13 | 松下電器産業株式会社 | バイモス型論理回路 |
EP0387463A1 (de) | 1989-03-14 | 1990-09-19 | International Business Machines Corporation | Komplementäre Emitterfolger-Treiber |
US4999523A (en) * | 1989-12-05 | 1991-03-12 | Hewlett-Packard Company | BICMOS logic gate with higher pull-up voltage |
US5247207A (en) * | 1989-12-20 | 1993-09-21 | National Semiconductor Corporation | Signal bus line driver circuit |
US5089727A (en) * | 1990-04-02 | 1992-02-18 | Motorola, Inc. | Pulsed driver circuit |
JP2607394B2 (ja) * | 1990-11-01 | 1997-05-07 | 株式会社日立製作所 | 非反転バッファ装置および半導体記憶装置 |
US5604417A (en) * | 1991-12-19 | 1997-02-18 | Hitachi, Ltd. | Semiconductor integrated circuit device |
US5243237A (en) * | 1992-01-22 | 1993-09-07 | Samsung Semiconductor, Inc. | Noninverting bi-cmos gates with propagation delays of a single bi-cmos inverter |
GB9222455D0 (en) * | 1992-10-26 | 1992-12-09 | Philips Electronics Uk Ltd | A current sensing circuit |
FR2849536B1 (fr) * | 2002-12-27 | 2007-02-23 | St Microelectronics Sa | Circuit d'interface de fourniture de tension |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3443122A (en) * | 1965-11-03 | 1969-05-06 | Gen Dynamics Corp | Gating circuit utilizing junction type field effect transistor as input driver to gate driver |
FR1465699A (fr) * | 1965-12-03 | 1967-01-13 | Csf | Circuits logiques à transistors à effet de champ |
GB1251693A (de) * | 1968-02-29 | 1971-10-27 | ||
DE1765454C3 (de) * | 1968-05-21 | 1975-07-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Schaltungsanordnung mit einem an einen Impulsgenerator angeschlossenen Hallgenerator |
JPS5630961B2 (de) * | 1973-09-10 | 1981-07-18 | ||
DE2511488A1 (de) * | 1975-03-15 | 1976-09-23 | Bosch Gmbh Robert | Cmos-inverter |
JPS5919435A (ja) * | 1982-07-23 | 1984-01-31 | Hitachi Ltd | 半導体集積回路装置 |
JPS5925424A (ja) * | 1982-08-04 | 1984-02-09 | Hitachi Ltd | ゲ−ト回路 |
KR890004212B1 (en) * | 1983-07-08 | 1989-10-27 | Fujitsu Ltd | Complementary logic circuit |
JPS6016022A (ja) * | 1983-07-08 | 1985-01-26 | Fujitsu Ltd | コンプリメンタリロジツク回路 |
JPS6051326A (ja) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | 半導体集積回路装置 |
US4590395A (en) * | 1984-07-20 | 1986-05-20 | Honeywell Inc. | FET-bipolar drive circuit |
JPH0685498B2 (ja) * | 1984-08-24 | 1994-10-26 | 株式会社日立製作所 | 論理回路 |
JPS61289723A (ja) * | 1985-06-18 | 1986-12-19 | Nec Corp | 高電圧デイジタル制御信号出力回路 |
EP0433271A3 (en) * | 1985-07-22 | 1991-11-06 | Hitachi, Ltd. | Semiconductor device |
JPS6193655A (ja) * | 1985-09-30 | 1986-05-12 | Hitachi Ltd | 半導体装置 |
US4962181A (en) * | 1989-05-08 | 1990-10-09 | Hoechst Celanese Corp. | Polyamide polymer having 12-F fluorine-containing linking groups |
-
1987
- 1987-10-09 JP JP62253700A patent/JPH0197013A/ja active Pending
-
1988
- 1988-10-06 DE DE8888116579T patent/DE3867587D1/de not_active Expired - Lifetime
- 1988-10-06 EP EP88116579A patent/EP0311083B1/de not_active Expired
- 1988-10-07 US US07/254,568 patent/US4948994A/en not_active Expired - Fee Related
- 1988-10-07 CA CA000579634A patent/CA1310375C/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0197013A (ja) | 1989-04-14 |
US4948994A (en) | 1990-08-14 |
EP0311083A3 (en) | 1990-03-07 |
EP0311083B1 (de) | 1992-01-08 |
CA1310375C (en) | 1992-11-17 |
EP0311083A2 (de) | 1989-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |