FR2834386B1 - Interrupteur bidirectionnel commande en tension - Google Patents

Interrupteur bidirectionnel commande en tension

Info

Publication number
FR2834386B1
FR2834386B1 FR0117044A FR0117044A FR2834386B1 FR 2834386 B1 FR2834386 B1 FR 2834386B1 FR 0117044 A FR0117044 A FR 0117044A FR 0117044 A FR0117044 A FR 0117044A FR 2834386 B1 FR2834386 B1 FR 2834386B1
Authority
FR
France
Prior art keywords
voltage control
bidirectional switch
switch voltage
bidirectional
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0117044A
Other languages
English (en)
Other versions
FR2834386A1 (fr
Inventor
Jean Michel Simonnet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0117044A priority Critical patent/FR2834386B1/fr
Priority to EP02799855A priority patent/EP1459388A1/fr
Priority to PCT/FR2002/004581 priority patent/WO2003056631A1/fr
Priority to US10/500,183 priority patent/US7145185B2/en
Publication of FR2834386A1 publication Critical patent/FR2834386A1/fr
Application granted granted Critical
Publication of FR2834386B1 publication Critical patent/FR2834386B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
FR0117044A 2001-12-28 2001-12-28 Interrupteur bidirectionnel commande en tension Expired - Fee Related FR2834386B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0117044A FR2834386B1 (fr) 2001-12-28 2001-12-28 Interrupteur bidirectionnel commande en tension
EP02799855A EP1459388A1 (fr) 2001-12-28 2002-12-27 INTERRUPTEUR BIDIRECTIONNEL COMMANDÉ EN TENSION
PCT/FR2002/004581 WO2003056631A1 (fr) 2001-12-28 2002-12-27 Interrupteur bidirectionnel commandé en tension
US10/500,183 US7145185B2 (en) 2001-12-28 2002-12-27 Voltage-controlled bidirectional switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0117044A FR2834386B1 (fr) 2001-12-28 2001-12-28 Interrupteur bidirectionnel commande en tension

Publications (2)

Publication Number Publication Date
FR2834386A1 FR2834386A1 (fr) 2003-07-04
FR2834386B1 true FR2834386B1 (fr) 2004-04-02

Family

ID=8871082

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0117044A Expired - Fee Related FR2834386B1 (fr) 2001-12-28 2001-12-28 Interrupteur bidirectionnel commande en tension

Country Status (4)

Country Link
US (1) US7145185B2 (fr)
EP (1) EP1459388A1 (fr)
FR (1) FR2834386B1 (fr)
WO (1) WO2003056631A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2864343A1 (fr) * 2003-12-19 2005-06-24 St Microelectronics Sa Triac fonctionnant dans les quadrants q1 et q4
JP5711646B2 (ja) * 2010-11-16 2015-05-07 株式会社豊田中央研究所 ダイオード
US10533437B2 (en) * 2013-11-04 2020-01-14 United Technologies Corporation Inner diffuser case for a gas turbine engine
US9722061B2 (en) * 2014-07-24 2017-08-01 Stmicroelectronics (Tours) Sas Bidirectional switch
FR3076661A1 (fr) 2018-01-05 2019-07-12 Stmicroelectronics (Tours) Sas Triode semiconductrice

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994884A (en) 1987-03-31 1991-02-19 Kabushiki Kaisha Toshiba Gate-controlled bi-directional semiconductor switching device
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.
FR2745447B1 (fr) * 1996-02-27 1998-05-15 Sgs Thomson Microelectronics Commande d'arret/marche d'un moteur bidirectionnel
FR2750536B1 (fr) * 1996-06-28 1998-12-18 Sgs Thomson Microelectronics Reseau de triacs a gachettes referencees par rapport a une electrode commune de face opposee
US6480056B1 (en) 1997-06-09 2002-11-12 Sgs-Thomson Microelectronics S.A. Network of triacs with gates referenced with respect to a common opposite face electrode
FR2797525B1 (fr) 1999-08-09 2001-10-12 St Microelectronics Sa Commutateur bidirectionnel a performances en commutation ameliorees

Also Published As

Publication number Publication date
EP1459388A1 (fr) 2004-09-22
US20050017263A1 (en) 2005-01-27
US7145185B2 (en) 2006-12-05
FR2834386A1 (fr) 2003-07-04
WO2003056631A1 (fr) 2003-07-10

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Legal Events

Date Code Title Description
ST Notification of lapse