DE3781175D1 - Halbleiterspeichervorrichtung. - Google Patents

Halbleiterspeichervorrichtung.

Info

Publication number: DE3781175D1
Authority: DE; Germany
Prior art keywords: storage device; semiconductor storage; semiconductor; storage
Prior art date: 1986-01-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8787300681T

Other languages

English (en)

Other versions

DE3781175T2 (de

Inventor

Kazutami Mitsubishi-De Arimoto

Koichiro Mitsubishi-De Mashiko

Kiyohiro Mitsubishi-D Furutani

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-01-30

Filing date

1987-01-27

Publication date

1992-09-24

1987-01-27 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1992-09-24 Publication of DE3781175D1 publication Critical patent/DE3781175D1/de

1993-01-14 Application granted granted Critical

1993-01-14 Publication of DE3781175T2 publication Critical patent/DE3781175T2/de

2007-01-28 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

DE8787300681T 1986-01-30 1987-01-27 Halbleiterspeichervorrichtung. Expired - Fee Related DE3781175T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61020615A JPH0815206B2 (ja)	1986-01-30	1986-01-30	半導体記憶装置

Publications (2)

Publication Number	Publication Date
DE3781175D1 true DE3781175D1 (de)	1992-09-24
DE3781175T2 DE3781175T2 (de)	1993-01-14

Family

ID=12032153

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787300681T Expired - Fee Related DE3781175T2 (de)	1986-01-30	1987-01-27	Halbleiterspeichervorrichtung.

Country Status (4)

Country	Link
US (1)	US5084746A (de)
EP (1)	EP0234741B1 (de)
JP (1)	JPH0815206B2 (de)
DE (1)	DE3781175T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0685427B2 (ja) *	1986-03-13	1994-10-26	三菱電機株式会社	半導体記憶装置
JPH088316B2 (ja) *	1990-01-31	1996-01-29	株式会社東芝	紫外線消去型不揮発性半導体メモリ装置
US5726485A (en)	1996-03-13	1998-03-10	Micron Technology, Inc.	Capacitor for a semiconductor device
KR100228773B1 (ko) *	1996-12-31	1999-11-01	김영환	반도체소자 및 그 제조방법
AU6607201A (en)	2000-06-15	2001-12-24	Reinz Dichtungs Gmbh And Co Kg	Flat gasket and method for the production thereof
JP2004193483A (ja) *	2002-12-13	2004-07-08	Renesas Technology Corp	半導体記憶装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5539073B2 (de) *	1974-12-25	1980-10-08
DE2720533A1 (de) *	1977-05-06	1978-11-09	Siemens Ag	Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
JPS57111061A (en) *	1980-12-26	1982-07-10	Fujitsu Ltd	Semiconductor memory unit
US4493056A (en) *	1982-06-30	1985-01-08	International Business Machines Corporation	RAM Utilizing offset contact regions for increased storage capacitance
JPS5922358A (ja) *	1982-07-28	1984-02-04	Toshiba Corp	半導体記憶装置
JPH0640573B2 (ja) *	1983-12-26	1994-05-25	株式会社日立製作所	半導体集積回路装置
JPS59104156A (ja) *	1982-12-07	1984-06-15	Toshiba Corp	多層キヤパシタ
JPS6012752A (ja) *	1983-07-01	1985-01-23	Nippon Telegr & Teleph Corp <Ntt>	半導体記憶装置およびその製造方法
US4717942A (en) *	1983-07-29	1988-01-05	Nec Corporation	Dynamic ram with capacitor groove surrounding switching transistor
JPS60113460A (ja) *	1983-11-25	1985-06-19	Oki Electric Ind Co Ltd	ダイナミックメモリ素子の製造方法
JPS60167361A (ja) *	1984-02-09	1985-08-30	Fujitsu Ltd	半導体記憶装置
JPH0618257B2 (ja) *	1984-04-28	1994-03-09	富士通株式会社	半導体記憶装置の製造方法
JPS61107762A (ja) *	1984-10-31	1986-05-26	Toshiba Corp	半導体記憶装置の製造方法
JPS61140169A (ja) *	1984-12-13	1986-06-27	Toshiba Corp	半導体記憶装置とその製造方法

1986
- 1986-01-30 JP JP61020615A patent/JPH0815206B2/ja not_active Expired - Lifetime
1987
- 1987-01-27 EP EP87300681A patent/EP0234741B1/de not_active Expired - Lifetime
- 1987-01-27 DE DE8787300681T patent/DE3781175T2/de not_active Expired - Fee Related
1990
- 1990-04-24 US US07/511,909 patent/US5084746A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US5084746A (en)	1992-01-28
JPH0815206B2 (ja)	1996-02-14
EP0234741B1 (de)	1992-08-19
EP0234741A3 (en)	1987-10-28
JPS62177963A (ja)	1987-08-04
DE3781175T2 (de)	1993-01-14
EP0234741A2 (de)	1987-09-02

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Legal Events

Date	Code	Title
1993-09-16	8364	No opposition during term of opposition
1996-02-01	8320	Willingness to grant licences declared (paragraph 23)
2003-11-13	8339	Ceased/non-payment of the annual fee