DE69022310D1 - Halbleiterspeichergerät. - Google Patents

Halbleiterspeichergerät.

Info

Publication number
DE69022310D1
DE69022310D1 DE69022310T DE69022310T DE69022310D1 DE 69022310 D1 DE69022310 D1 DE 69022310D1 DE 69022310 T DE69022310 T DE 69022310T DE 69022310 T DE69022310 T DE 69022310T DE 69022310 D1 DE69022310 D1 DE 69022310D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69022310T
Other languages
English (en)
Other versions
DE69022310T2 (de
Inventor
Toru Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69022310D1 publication Critical patent/DE69022310D1/de
Application granted granted Critical
Publication of DE69022310T2 publication Critical patent/DE69022310T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
DE69022310T 1989-07-04 1990-07-04 Halbleiterspeichergerät. Expired - Fee Related DE69022310T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1171283A JP2780354B2 (ja) 1989-07-04 1989-07-04 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69022310D1 true DE69022310D1 (de) 1995-10-19
DE69022310T2 DE69022310T2 (de) 1996-02-22

Family

ID=15920453

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022310T Expired - Fee Related DE69022310T2 (de) 1989-07-04 1990-07-04 Halbleiterspeichergerät.

Country Status (5)

Country Link
US (1) US5148398A (de)
EP (1) EP0407173B1 (de)
JP (1) JP2780354B2 (de)
KR (1) KR930009543B1 (de)
DE (1) DE69022310T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4028819A1 (de) * 1990-09-11 1992-03-12 Siemens Ag Schaltungsanordnung zum testen eines halbleiterspeichers mittels paralleltests mit verschiedenen testbitmustern
JP2863012B2 (ja) * 1990-12-18 1999-03-03 三菱電機株式会社 半導体記憶装置
JP2957284B2 (ja) * 1990-12-22 1999-10-04 富士通株式会社 半導体回路
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US6781895B1 (en) * 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
KR950000305Y1 (ko) * 1991-12-23 1995-01-16 금성일렉트론 주식회사 메모리 장치의 테스트 모드회로
JPH05210998A (ja) * 1992-01-30 1993-08-20 Nec Corp 半導体メモリ装置
US5216672A (en) * 1992-04-24 1993-06-01 Digital Equipment Corporation Parallel diagnostic mode for testing computer memory
JPH0612878A (ja) * 1992-06-25 1994-01-21 Mitsubishi Electric Corp 半導体メモリ装置
US5327382A (en) * 1992-09-09 1994-07-05 Katsunori Seno Method of testing redundant memory cells
JP2768175B2 (ja) * 1992-10-26 1998-06-25 日本電気株式会社 半導体メモリ
KR960002016B1 (ko) * 1993-02-15 1996-02-09 금성일렉트론주식회사 반도체 기억소자의 테스트 모드회로
JPH06275100A (ja) * 1993-03-19 1994-09-30 Fujitsu Ltd 半導体記憶装置
JPH0877797A (ja) * 1994-09-01 1996-03-22 Fujitsu Ltd 半導体記憶装置
JP3603440B2 (ja) * 1996-01-12 2004-12-22 富士通株式会社 半導体記憶装置
US5959911A (en) * 1997-09-29 1999-09-28 Siemens Aktiengesellschaft Apparatus and method for implementing a bank interlock scheme and related test mode for multibank memory devices
US6058056A (en) * 1998-04-30 2000-05-02 Micron Technology, Inc. Data compression circuit and method for testing memory devices
US6295618B1 (en) * 1998-08-25 2001-09-25 Micron Technology, Inc. Method and apparatus for data compression in memory devices
JP2001243795A (ja) * 1999-12-24 2001-09-07 Nec Corp 半導体記憶装置
JP4057756B2 (ja) * 2000-03-01 2008-03-05 松下電器産業株式会社 半導体集積回路
US6421794B1 (en) 2000-03-09 2002-07-16 John T. Chen Method and apparatus for diagnosing memory using self-testing circuits
EP1741732B1 (de) 2004-04-13 2013-06-19 Daikin Industries, Ltd. Chlortrifluorethylen-copolymer
US7339841B2 (en) * 2005-09-16 2008-03-04 Infineon Technologies Ag Test mode method and apparatus for internal memory timing signals
JP5181698B2 (ja) 2008-01-30 2013-04-10 富士通セミコンダクター株式会社 半導体メモリおよび半導体メモリの製造方法
WO2009116117A1 (ja) 2008-03-19 2009-09-24 富士通マイクロエレクトロニクス株式会社 半導体メモリ、システム、半導体メモリの動作方法および半導体メモリの製造方法
JP2012022750A (ja) * 2010-07-15 2012-02-02 Lapis Semiconductor Co Ltd 半導体メモリのテスト回路
GB2498980A (en) * 2012-02-01 2013-08-07 Inside Secure Device and method to perform a parallel memory test

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105897A (en) * 1980-12-23 1982-07-01 Fujitsu Ltd Semiconductor storage device
US4686456A (en) * 1985-06-18 1987-08-11 Kabushiki Kaisha Toshiba Memory test circuit
JP2523586B2 (ja) * 1987-02-27 1996-08-14 株式会社日立製作所 半導体記憶装置
JPS63257999A (ja) * 1987-04-15 1988-10-25 Mitsubishi Electric Corp 半導体記憶装置
JPS6473600A (en) * 1987-09-16 1989-03-17 Hitachi Ltd Semiconductor memory device
JP2805853B2 (ja) * 1989-06-26 1998-09-30 日本電気株式会社 半導体メモリ

Also Published As

Publication number Publication date
EP0407173B1 (de) 1995-09-13
EP0407173A3 (en) 1992-01-08
KR930009543B1 (ko) 1993-10-06
JPH0337900A (ja) 1991-02-19
US5148398A (en) 1992-09-15
KR910003679A (ko) 1991-02-28
JP2780354B2 (ja) 1998-07-30
DE69022310T2 (de) 1996-02-22
EP0407173A2 (de) 1991-01-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee