CN1645591A - 基板的支承板以及支承板的剥离方法 - Google Patents
基板的支承板以及支承板的剥离方法 Download PDFInfo
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- CN1645591A CN1645591A CNA200410082083XA CN200410082083A CN1645591A CN 1645591 A CN1645591 A CN 1645591A CN A200410082083X A CNA200410082083X A CN A200410082083XA CN 200410082083 A CN200410082083 A CN 200410082083A CN 1645591 A CN1645591 A CN 1645591A
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- Prior art keywords
- support plate
- substrate
- solvent
- plate
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000853 adhesive Substances 0.000 claims description 24
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Images
Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
- Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
- Y10T156/1116—Using specified organic delamination solvent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1142—Changing dimension during delaminating [e.g., crushing, expanding, warping, etc.]
- Y10T156/1147—Using shrinking or swelling agent during delaminating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
仅含醇 | 醇1∶水1 | 醇1∶水2 | |
乙醇 | 3分30秒 | 6分 | 15分 |
甲醇 | 3分 | 6分 | 17~19分 |
Claims (14)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP402206/03 | 2003-12-01 | ||
JP402206/2003 | 2003-12-01 | ||
JP2003402206 | 2003-12-01 | ||
JP2004293158 | 2004-10-06 | ||
JP293158/2004 | 2004-10-06 | ||
JP293158/04 | 2004-10-06 | ||
JP343547/04 | 2004-11-29 | ||
JP343547/2004 | 2004-11-29 | ||
JP2004343547A JP2006135272A (ja) | 2003-12-01 | 2004-11-29 | 基板のサポートプレート及びサポートプレートの剥離方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1645591A true CN1645591A (zh) | 2005-07-27 |
CN100375262C CN100375262C (zh) | 2008-03-12 |
Family
ID=34830958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410082083XA Active CN100375262C (zh) | 2003-12-01 | 2004-12-01 | 基板的支承板以及支承板的剥离方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7211168B2 (zh) |
JP (1) | JP2006135272A (zh) |
KR (1) | KR20050053019A (zh) |
CN (1) | CN100375262C (zh) |
TW (1) | TWI377642B (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101728226B (zh) * | 2008-10-23 | 2011-08-17 | 亚泰半导体设备股份有限公司 | 分离装置及分离方法 |
CN102254789A (zh) * | 2010-04-02 | 2011-11-23 | 东京应化工业株式会社 | 剥离方法及剥离液 |
CN102486992A (zh) * | 2010-12-01 | 2012-06-06 | 比亚迪股份有限公司 | 一种半导体器件的制造方法 |
CN102625951A (zh) * | 2009-08-27 | 2012-08-01 | 康宁股份有限公司 | 使用超声波使玻璃衬底从载体上脱离 |
CN103128618A (zh) * | 2011-11-21 | 2013-06-05 | 株式会社东洋质量第一 | 玻璃研磨方法以及用于该方法的层压板 |
CN103325715A (zh) * | 2009-03-18 | 2013-09-25 | Ev集团有限责任公司 | 用于从载体中分离晶片的装置和方法 |
CN103325719A (zh) * | 2012-03-22 | 2013-09-25 | 株式会社东芝 | 支撑基板、半导体装置的制造方法以及半导体装置的检查方法 |
CN104640381A (zh) * | 2013-11-14 | 2015-05-20 | 胜华科技股份有限公司 | 电子元件半成品、电子元件及其制造方法 |
TWI510300B (zh) * | 2010-04-27 | 2015-12-01 | Tokyo Ohka Kogyo Co Ltd | 剝離方法及剝離裝置 |
CN109786308A (zh) * | 2017-11-13 | 2019-05-21 | 三星电子株式会社 | 从器件基板剥离载体基板的方法和设备 |
CN110676219A (zh) * | 2019-10-31 | 2020-01-10 | 江苏汇成光电有限公司 | 一种应对真空异常的晶圆切割处理方法 |
Families Citing this family (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4381860B2 (ja) * | 2004-03-24 | 2009-12-09 | 日東電工株式会社 | 補強半導体ウエハに固定された補強板の分離方法およびその装置 |
JP4721828B2 (ja) * | 2005-08-31 | 2011-07-13 | 東京応化工業株式会社 | サポートプレートの剥離方法 |
JP3859682B1 (ja) * | 2005-09-08 | 2006-12-20 | 東京応化工業株式会社 | 基板の薄板化方法及び回路素子の製造方法 |
JP4795772B2 (ja) * | 2005-10-24 | 2011-10-19 | リンテック株式会社 | シート切断用テーブル及びシート貼付装置 |
JP5318324B2 (ja) * | 2005-12-06 | 2013-10-16 | 東京応化工業株式会社 | サポートプレートの貼り合わせ方法 |
DE102006000687B4 (de) | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
US8268449B2 (en) | 2006-02-06 | 2012-09-18 | Brewer Science Inc. | Thermal- and chemical-resistant acid protection coating material and spin-on thermoplastic adhesive |
JP5008340B2 (ja) * | 2006-06-01 | 2012-08-22 | 東京応化工業株式会社 | 基板の薄板化方法、貼り合わせシステムおよび薄板化システム |
KR101243575B1 (ko) * | 2006-06-30 | 2013-03-20 | 엘지디스플레이 주식회사 | 기판탈착장치 및 이를 이용한 기판탈착방법 |
JP5074719B2 (ja) | 2006-07-14 | 2012-11-14 | 東京応化工業株式会社 | ウエハを薄くする方法及びサポートプレート |
JP2008021929A (ja) * | 2006-07-14 | 2008-01-31 | Tokyo Ohka Kogyo Co Ltd | サポートプレート、搬送装置、剥離装置及び剥離方法 |
JP2008041987A (ja) * | 2006-08-08 | 2008-02-21 | Tokyo Ohka Kogyo Co Ltd | サポートプレートとウェハとの剥離方法及び装置 |
US20080200011A1 (en) * | 2006-10-06 | 2008-08-21 | Pillalamarri Sunil K | High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach |
US7713835B2 (en) * | 2006-10-06 | 2010-05-11 | Brewer Science Inc. | Thermally decomposable spin-on bonding compositions for temporary wafer bonding |
JP4922752B2 (ja) * | 2006-12-28 | 2012-04-25 | 東京応化工業株式会社 | 孔あきサポートプレート |
JP4825695B2 (ja) * | 2007-01-19 | 2011-11-30 | 東京応化工業株式会社 | 液状溶剤当接ユニット |
CN101779268B (zh) | 2007-06-25 | 2013-11-06 | 布鲁尔科技公司 | 高温旋涂暂时性粘合组合物 |
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CN102254789B (zh) * | 2010-04-02 | 2015-04-15 | 东京应化工业株式会社 | 剥离方法及剥离液 |
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CN104640381A (zh) * | 2013-11-14 | 2015-05-20 | 胜华科技股份有限公司 | 电子元件半成品、电子元件及其制造方法 |
CN109786308A (zh) * | 2017-11-13 | 2019-05-21 | 三星电子株式会社 | 从器件基板剥离载体基板的方法和设备 |
CN110676219A (zh) * | 2019-10-31 | 2020-01-10 | 江苏汇成光电有限公司 | 一种应对真空异常的晶圆切割处理方法 |
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JP2006135272A (ja) | 2006-05-25 |
US20050173064A1 (en) | 2005-08-11 |
CN100375262C (zh) | 2008-03-12 |
TW200527579A (en) | 2005-08-16 |
TWI377642B (en) | 2012-11-21 |
US20070151674A1 (en) | 2007-07-05 |
US7211168B2 (en) | 2007-05-01 |
KR20050053019A (ko) | 2005-06-07 |
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