US20070151674A1 - Substrate supporting plate - Google Patents
Substrate supporting plate Download PDFInfo
- Publication number
- US20070151674A1 US20070151674A1 US11/682,754 US68275407A US2007151674A1 US 20070151674 A1 US20070151674 A1 US 20070151674A1 US 68275407 A US68275407 A US 68275407A US 2007151674 A1 US2007151674 A1 US 2007151674A1
- Authority
- US
- United States
- Prior art keywords
- supporting plate
- substrate
- diameter
- solvent
- penetrating holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 239000002904 solvent Substances 0.000 claims abstract description 47
- 230000000149 penetrating effect Effects 0.000 claims abstract description 29
- 239000011521 glass Substances 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 27
- 229910000640 Fe alloy Inorganic materials 0.000 abstract description 2
- 229910000990 Ni alloy Inorganic materials 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 51
- 239000012790 adhesive layer Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 12
- 230000001070 adhesive effect Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000002585 base Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
- Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
- Y10T156/1116—Using specified organic delamination solvent
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1142—Changing dimension during delaminating [e.g., crushing, expanding, warping, etc.]
- Y10T156/1147—Using shrinking or swelling agent during delaminating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
Definitions
- the present invention relates to a supporting plate which is attached to a substrate such as a semiconductor wafer to support the substrate when the substrate is thinned, and also relates to a method for stripping the supporting plate.
- a semiconductor chip to be incorporated therein must be thin.
- the thickness of a wafer which forms a semiconductor chip is 125-150 ⁇ m at present, it is expected that the thickness of a semiconductor wafer must be 25-50 ⁇ m for a next generation chip.
- FIG. 7 A conventional method for thinning a semiconductor wafer is shown in FIG. 7 .
- a protecting tape is attached to a surface (A-surface) of a semiconductor wafer on which a circuit (element) has been formed.
- the wafer is turned over, and the rear surface (B-surface) of the semiconductor wafer is ground by a grinder so as to make the wafer thin.
- the rear surface of the semiconductor wafer which has been thinned is fixed onto a dicing tape retained by a dicing frame, and the protecting tape covering the surface (A-surface) of the semiconductor wafer on which a circuit (element) has been formed is stripped in this state.
- the wafer is cut into each chip by a dicing device.
- Document 2 discloses that a protecting base is obtained by immersing ladder-type silicone oligomer in an aluminum nitride—boron nitride porous sintered material is used instead of a protecting tape, and the protecting base and a semiconductor wafer are bonded by using a thermoplastic film. Document 2 also mentions that they are immersed in pure water at 80° C. for 3 hours before stripping.
- Document 3 discloses that a protecting base is made of a material having the same thermal expansion coefficient as a semiconductor wafer such as alumina, aluminum nitride, boron nitride, or silicon carbide. Also, Document 3 proposes a method in which the protecting base and the semiconductor wafer are bonded by using a thermoplastic resin such as polyimide, the semiconductor wafer is thinned by a grinder, and thereafter stripping is performed by immersing in water, amine, or a mixed solution of water and amine, or by using steam.
- a thermoplastic resin such as polyimide
- Document 4 discloses that Invar (alloy of 36% Ni and Fe) is used for part of a shadow mask (at the side irradiated with electron beams) for a Braun tube.
- handling or transfer can be automated by using alumina, aluminum nitride, boron nitride, or silicon carbide as a supporting plate instead of a protecting tape.
- alumina, aluminum nitride, boron nitride, or silicon carbide as a supporting plate instead of a protecting tape.
- thermoplastic film bonding the support plate and the semiconductor wafer often fails to completely dissolve, and tends to be left in a state of sticking to either one of the support plate and the semiconductor wafer.
- a glass substrate is used as a supporting plate, the glass substrate and a semiconductor wafer are bonded by using an ultraviolet curable wax or a double-faced adhesive tape, and the glass substrate and the semiconductor wafer are stripped from each other by being irradiated with ultraviolet rays having a different wavelength from the ultraviolet rays used for curing.
- the element CCD or CMOS
- a supporting plate having a diameter identical to or larger than a diameter of a substrate to which the supporting plate is attached, wherein a plurality of penetrating holes are provided in a thickness direction of the supporting plate so as to allow a solvent to pass therethrough.
- the outer peripheral portion of the supporting plate which is outside from the area covered by the edge portion of the substrate, may be a flat portion in which no penetrating hole is formed.
- the material of the supporting plate it is preferable to select a material whose thermal expansion coefficient is close to that of the substrate as much as possible (5.0 ⁇ 10 ⁇ 6 or less) so as to prevent warpage from occurring by heat applied (for metalizing after grinding) in a state where the substrate and the supporting plate are attached to each other.
- a low thermal expansion material having a thermal expansion coefficient of 1.5 ⁇ 10 ⁇ 6 or less is preferable, and the examples include an alloy of Ni and Fe, ceramic, and glass.
- a solvent for dissolving an adhesive bonding the supporting plate and the substrate is supplied from outside the supporting plate, the solvent is allowed to reach the adhesive through the penetrating holes of the supporting plate so as to dissolve the adhesive, and thereafter the supporting plate is stripped from the substrate. It is preferable to transfer the thinned substrate to which the supporting plate has been attached to a dicing tape before the solvent is supplied.
- a jig for supplying the solvent a jig comprising a solvent supplying plate and an O-ring can be used.
- the solvent supplying plate is laid onto the supporting plate via the O-ring, and the solvent is supplied through the solvent supplying plate to the space sealed by the supporting plate, the O-ring, and the solvent supplying plate.
- a sprayer, an ultrasonic nozzle, or a two-fluid nozzle (gas-liquid mixed nozzle) can be used, or it is also possible to immerse in a tank filled with a solvent.
- the supporting plate As a method for stripping the supporting plate from the substrate, it is possible to attract part of the periphery of the support plate by using a magnet. However, if the supporting plate is made of glass, it is impossible to attract by a magnet. Therefore, the stripping is performed mechanically by hooking the end surface of the glass with a jig.
- the solvent alcohol, alkali, ketone, a mixed solution of alcohol and ketone, or a solution in which these materials are diluted with water can be used.
- the solvent is supplied to a supporting plate in a state of being spun or vibrated, or after the solvent is supplied, the supporting plate is spun or vibrated.
- the temperature of the solvent it is preferable to be in a range of 25-50° C.
- FIG. 1 is a view showing a supporting plate according to the present invention and processes for thinning a semiconductor wafer in which a stripping method for the supporting plate is incorporated;
- FIG. 2 is a perspective view of a supporting plate
- FIG. 3 is a view showing a state where a supporting plate is laid onto a semiconductor wafer
- FIG. 4 is a schematic view of an attaching apparatus
- FIG. 5 is a view showing a state where alcohol is supplied from above a supporting plate
- FIG. 6 ( a ) is a view showing a state where a solvent supplying means is elevated and FIG. 6 ( b ) is a view showing a state where a solvent supplying means is lowered;
- FIG. 7 is a view showing processes for thinning a semiconductor wafer according to a conventional method.
- FIG. 1 is a view showing a supporting plate according to the present invention and processes for thinning a semiconductor wafer in which a stripping method for the supporting plate is incorporated.
- an adhesive liquid is applied onto a circuit (element)-formed surface of a semiconductor wafer W.
- the application is conducted by using a spinner or the like.
- the material for the adhesive liquid is a novolac-type phenol resin.
- the adhesive liquid undergoes preliminary drying, so that its flowability is reduced and it can keep its shape as an adhesive layer 1 .
- heating is conducted for 5 minutes at a temperature of 80° C. by using an oven.
- the thickness of the adhesive layer 1 is determined based on the irregularities of the circuit which has been formed on the surface of the semiconductor wafer W. If a sufficient thickness is not obtained by one application, application and preliminary drying are repeated a plurality of times. In this instance, the drying degree is adjusted to be higher with respect to preliminary drying for the adhesive layers other than the top layer, so that the flowability of the adhesive layers other than the top layer can be reduced.
- a supporting plate 2 is attached to the semiconductor wafer W on which the adhesive layer 1 of a desired thickness has been formed.
- the diameter of the supporting plate 2 is slightly larger than that of the semiconductor wafer W (by 2 mm in the radius).
- the supporting plate 2 is made of an alloy of iron and nickel (alloy of 36% nickel: Invar) having a thickness of approximately 0.5 mm, and penetrating holes 3 having a diameter of approximately 0.5 mm are formed at a pitch of approximately 0.7 mm in the supporting plate 2 .
- the outer peripheral portion of the supporting plate 2 is a flat portion 4 in which no penetrating hole is formed.
- the flat portion 4 is outside from the area covered by the edge portion of the semiconductor wafer W when the supporting plate 2 is laid onto the semiconductor wafer W. Since the semiconductor wafer W is thin, cracking or chipping easily occurs. If the edge portion of the semiconductor wafer W is within the area of the penetrating holes, this portion will have no support and easily crack or chip due to hydraulic pressure of a grinding liquid or pressure of a grinder. Therefore, in the embodiment, the edge portion of the semiconductor wafer W is located at the flat portion 4 .
- the supporting plate 2 can be made of a magnetic material. By doing so, it is possible to employ a magnet at the time of stripping and make the structure of the apparatus simple compared to the conventional case where alumina, aluminum nitride, boron nitride, or silicon carbide is used as a protecting base.
- the supporting plate is not limited to the above-mentioned one.
- the diameter of the supporting plate may be the same as that of the substrate.
- the one having no flat portion 4 is also possible, in which the penetrating holes are formed in the peripheral portion.
- ceramic or glass may be used as the material of the supporting plate.
- the diameter of the penetrating holes 3 is preferably 0.3-0.5 mm, and the pitch of the penetrating holes 3 is preferably 0.5-1.0 mm.
- the attaching apparatus 5 comprises a bottom plate 51 and a top plate 52 which is positioned above the bottom plate 51 .
- the top plate 52 is lifted and lowered by driving a motor 53 .
- a sintered plate 54 of ceramic is fixed to the lower surface of the top plate 52 , and an exhaust pipe 55 is connected to the sintered plate 54 .
- the semiconductor wafer W and the supporting plate 2 are set on the bottom plate 51 in a state where the semiconductor wafer W is positioned below and the supporting plate 2 is positioned above.
- the motor 53 is driven so as to lower the top plate 52 , and the sintered plate 54 is pushed onto the supporting plate 2 .
- heating 200° C. or less may be performed simultaneously, so that the solvent of the adhesive layer 1 can be removed via the sintered plate 54 and the exhaust pipe 55 .
- the semiconductor wafer W and the supporting plate 2 which have been united with respect to each other are taken from the attaching apparatus 5 .
- the rear surface (B-surface) of the semiconductor wafer W is ground by a grinder 10 , so that the semiconductor wafer W is thinned.
- water grinding liquid
- the rear surface of the semiconductor wafer W is ground by a grinder 10 , so that the semiconductor wafer W is thinned.
- water grinding liquid
- a non-soluble material which is not dissolved into water but dissolved into alcohol, is selected as the adhesive, it is possible to prevent the supporting plate 2 from stripping from the semiconductor wafer W at the time of grinding.
- a circuit is formed on the rear surface (B-surface) of the semiconductor wafer W if needed, and thereafter the rear surface is fixed onto a dicing tape 11 .
- the dicing tape 11 has an adhesive ability, and also is retained by a dicing frame 12 .
- alcohol is poured from above the supporting plate 2 .
- the alcohol reaches the adhesive layer 1 through the penetrating holes 3 of the supporting plate 2 , dissolves and removes the adhesive layer 1 .
- the alcohol can be spread over the whole surface of the adhesive layer 1 in a short period of time. While the spinning is being performed, it is preferable to apply pure water to the dicing tape so as to reduce the concentration of the solvent which comes into contact with the dicing tape.
- the alcohol it is preferable to select the one whose molecular weight is small such as ethanol or methanol because alcohol having a smaller molecular weight can dissolve the adhesive more easily.
- Table 1 shows the comparisons of ethanol, methanol, a mixed solution of ethanol and water, and a mixed solution of methanol and water with respect to how much time it takes to complete the stripping.
- Table 1 shows the comparisons of ethanol, methanol, a mixed solution of ethanol and water, and a mixed solution of methanol and water with respect to how much time it takes to complete the stripping.
- Table 1 shows the comparisons of ethanol, methanol, a mixed solution of ethanol and water, and a mixed solution of methanol and water with respect to how much time it takes to complete the stripping.
- Table 1 shows the comparisons of ethanol, methanol, a mixed solution of ethanol and water, and a mixed solution of methanol and water with respect to how much time it takes to complete the stripping.
- the ratio of alcohol and water is 1:1 or more
- stripping can be completed in a short period of time.
- ketone or a mixed solution of alcohol and ketone it is possible to use ketone or
- the solvent supplying means is comprised of a solvent supplying plate 60 , and O-rings 61 which are provided in the lower surface of the solvent supplying plate 60 .
- a solvent (stripping solution) supplying pipe 62 and a solvent discharging pipe 63 are connected to the solvent supplying plate 60 .
- the solvent supplying means 60 in a state shown FIG. 6 ( a ) is lowered, and thereby the solvent supplying means 60 is laid onto the upper surface of the supporting plate 2 via the O-rings 61 as shown in FIG. 6 ( b ).
- a solvent is supplied from the solvent supplying pipe 62 to the space surrounded by the supporting plate 2 , the O-rings 61 and the solvent supplying plate 60 .
- the solvent passes through the penetrating holes 3 formed in the supporting plate 2 , dissolves and removes the adhesive layer 1 .
- the semiconductor wafer W to which the supporting plate 2 has been attached may be immersed in a tank filled with a solvent. In this case, ultrasonic vibration can make this process more effective.
- the supporting plate 2 is removed.
- the frame 12 is spun so as to remove the excessive solvent from the surface of the supporting plate 2 .
- a magnet 15 fixed to the tip end of an arm 14 is brought close to the supporting plate 2 , and the magnet 15 is allowed to attract the supporting plate 2 by magnetic force.
- the arm 14 is lifted obliquely, and the supporting plate 2 is stripped gradually from the periphery thereof.
- the semiconductor wafer W is cut into a chip size by using a dicing device 13 .
- the dicing tape 11 is irradiated with ultraviolet rays so as to reduce the adhesive ability of the dicing tape 11 , so that the cut chip can be taken.
- a plate having a number of penetrating holes is used as the supporting plate for a substrate such as a semiconductor wafer, and a solvent such as alcohol is supplied from outside the supporting plate. Consequently, the solvent is allowed to reach the adhesive through the penetrating holes of the supporting plate, and it is possible to strip the semiconductor wafer from the supporting plate in a short period of time. No cracking or chipping of the semiconductor wafer occurs while stripping.
- the present invention uses a material whose thermal expansion coefficient (1.5 ⁇ 10 ⁇ 6 or less) is close to that of a silicon wafer (4.0 ⁇ 10 ⁇ 6 or less) such as an alloy of Ni and Fe, ceramic, and glass. Consequently, it is possible to prevent warpage from occurring due to the difference in the thermal expansion coefficient in a heat treatment. It is also possible to use a magnet for removing the supporting plate after the adhesive layer is dissolved by a solvent.
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Abstract
A supporting plate having a diameter identical to or larger than a diameter of a substrate to which the supporting plate is attached. A plurality of penetrating holes is provided in a thickness direction of the supporting plate so as to allow a solvent, such as alcohol, to pass therethrough. A diameter of the penetrating holes is approximately in a range of 0.3-0.5 mm, and a pitch of the penetrating holes is approximately in a range of 0.5-1.0 mm. The supporting plate comprises a low thermal expansion material—such as glass, ceramic or an alloy of nickel and iron—which has a thermal expansion coefficient less than that of the substrate.
Description
- The present application is a divisional application of pending U.S. patent application Ser. No. 11/001,574, having a filing date of Dec. 1, 2004, which claims priority under 35 USC §119 based on Japanese Patent Application Numbers: 2003-402206, filed on Dec. 1, 2003; 2004-293158, filed on Oct. 6, 2004; and 2004-343547, filed on Nov. 29, 2004. The subject matter of the prior US application and the Japanese priority applications is incorporated by reference herein.
- 1. Field of the Invention
- The present invention relates to a supporting plate which is attached to a substrate such as a semiconductor wafer to support the substrate when the substrate is thinned, and also relates to a method for stripping the supporting plate.
- 2. Description of the Prior Art
- There has been a need of making IC cards for cell phones thinner, smaller, and lighter. In order to satisfy this need, a semiconductor chip to be incorporated therein must be thin. Although the thickness of a wafer which forms a semiconductor chip is 125-150 μm at present, it is expected that the thickness of a semiconductor wafer must be 25-50 μm for a next generation chip.
- A conventional method for thinning a semiconductor wafer is shown in
FIG. 7 . Specifically, a protecting tape is attached to a surface (A-surface) of a semiconductor wafer on which a circuit (element) has been formed. The wafer is turned over, and the rear surface (B-surface) of the semiconductor wafer is ground by a grinder so as to make the wafer thin. The rear surface of the semiconductor wafer which has been thinned is fixed onto a dicing tape retained by a dicing frame, and the protecting tape covering the surface (A-surface) of the semiconductor wafer on which a circuit (element) has been formed is stripped in this state. Next, the wafer is cut into each chip by a dicing device. - The above-mentioned method has been disclosed in
Document 1. According toDocument 1, the protecting tape having heat resistance is stripped from the semiconductor wafer by using a strong adhesive tape which is bonded to one end of the protecting tape. -
Document 2 discloses that a protecting base is obtained by immersing ladder-type silicone oligomer in an aluminum nitride—boron nitride porous sintered material is used instead of a protecting tape, and the protecting base and a semiconductor wafer are bonded by using a thermoplastic film.Document 2 also mentions that they are immersed in pure water at 80° C. for 3 hours before stripping. -
Document 3 discloses that a protecting base is made of a material having the same thermal expansion coefficient as a semiconductor wafer such as alumina, aluminum nitride, boron nitride, or silicon carbide. Also,Document 3 proposes a method in which the protecting base and the semiconductor wafer are bonded by using a thermoplastic resin such as polyimide, the semiconductor wafer is thinned by a grinder, and thereafter stripping is performed by immersing in water, amine, or a mixed solution of water and amine, or by using steam. - Although the technical field is different,
Document 4 discloses that Invar (alloy of 36% Ni and Fe) is used for part of a shadow mask (at the side irradiated with electron beams) for a Braun tube. - [Document 1] Japanese Patent Application Publication No. 2002-270676, paragraph 0035.
- [Document 2] Japanese Patent Application Publication No. 2002-203821, paragraph 0020.
- [Document 3] Japanese Patent Application Publication No. 2001-77304, paragraphs 0010, 0017 and 0020.
- [Document 4] Japanese Patent No. 3440333, paragraph 0007.
- In the case of using the protecting tape as disclosed in
Document 1, cracking or chipping of the semiconductor wafer easily occurs when the tape is stripped. Also, the protecting tape is not sufficient to support the thinned semiconductor wafer. Consequently, transfer needs to be conducted by manpower, and automation is impossible. - According to the techniques disclosed in the
Documents - Also, the thermoplastic film bonding the support plate and the semiconductor wafer often fails to completely dissolve, and tends to be left in a state of sticking to either one of the support plate and the semiconductor wafer.
- Another method has been known in which a glass substrate is used as a supporting plate, the glass substrate and a semiconductor wafer are bonded by using an ultraviolet curable wax or a double-faced adhesive tape, and the glass substrate and the semiconductor wafer are stripped from each other by being irradiated with ultraviolet rays having a different wavelength from the ultraviolet rays used for curing. However, if the circuit-formed surface of the semiconductor wafer is irradiated with the ultraviolet rays, the element (CCD or CMOS) might be damaged.
- In the case of using alumina, aluminum nitride, boron nitride, or silicon carbide as the protecting base, since a magnet cannot be employed at the time of stripping, the apparatus must be complicated.
- In order to solve the above-mentioned problems, according to the present invention, there is provided a supporting plate having a diameter identical to or larger than a diameter of a substrate to which the supporting plate is attached, wherein a plurality of penetrating holes are provided in a thickness direction of the supporting plate so as to allow a solvent to pass therethrough.
- In the case where the diameter of the supporting plate is larger than that of the substrate, the outer peripheral portion of the supporting plate, which is outside from the area covered by the edge portion of the substrate, may be a flat portion in which no penetrating hole is formed.
- As for the material of the supporting plate, it is preferable to select a material whose thermal expansion coefficient is close to that of the substrate as much as possible (5.0×10−6 or less) so as to prevent warpage from occurring by heat applied (for metalizing after grinding) in a state where the substrate and the supporting plate are attached to each other. Specifically, a low thermal expansion material having a thermal expansion coefficient of 1.5×10−6 or less is preferable, and the examples include an alloy of Ni and Fe, ceramic, and glass.
- As a method for stripping the supporting plate from the substrate after the substrate is thinned by grinding, a solvent for dissolving an adhesive bonding the supporting plate and the substrate is supplied from outside the supporting plate, the solvent is allowed to reach the adhesive through the penetrating holes of the supporting plate so as to dissolve the adhesive, and thereafter the supporting plate is stripped from the substrate. It is preferable to transfer the thinned substrate to which the supporting plate has been attached to a dicing tape before the solvent is supplied.
- As a jig for supplying the solvent, a jig comprising a solvent supplying plate and an O-ring can be used. In operation, the solvent supplying plate is laid onto the supporting plate via the O-ring, and the solvent is supplied through the solvent supplying plate to the space sealed by the supporting plate, the O-ring, and the solvent supplying plate. Also, as another means, a sprayer, an ultrasonic nozzle, or a two-fluid nozzle (gas-liquid mixed nozzle) can be used, or it is also possible to immerse in a tank filled with a solvent.
- As a method for stripping the supporting plate from the substrate, it is possible to attract part of the periphery of the support plate by using a magnet. However, if the supporting plate is made of glass, it is impossible to attract by a magnet. Therefore, the stripping is performed mechanically by hooking the end surface of the glass with a jig.
- As the solvent, alcohol, alkali, ketone, a mixed solution of alcohol and ketone, or a solution in which these materials are diluted with water can be used. In order to spread the solvent over the adhesive in a short period of time, it is preferable that the solvent is supplied to a supporting plate in a state of being spun or vibrated, or after the solvent is supplied, the supporting plate is spun or vibrated. Additionally, it is preferable to adjust the temperature of the solvent to be in a range of 25-50° C.
-
FIG. 1 is a view showing a supporting plate according to the present invention and processes for thinning a semiconductor wafer in which a stripping method for the supporting plate is incorporated; -
FIG. 2 is a perspective view of a supporting plate; -
FIG. 3 is a view showing a state where a supporting plate is laid onto a semiconductor wafer; -
FIG. 4 is a schematic view of an attaching apparatus; -
FIG. 5 is a view showing a state where alcohol is supplied from above a supporting plate; -
FIG. 6 (a) is a view showing a state where a solvent supplying means is elevated andFIG. 6 (b) is a view showing a state where a solvent supplying means is lowered; and -
FIG. 7 is a view showing processes for thinning a semiconductor wafer according to a conventional method. - Embodiments of the present invention will be described below with reference to the attached drawings.
FIG. 1 is a view showing a supporting plate according to the present invention and processes for thinning a semiconductor wafer in which a stripping method for the supporting plate is incorporated. First, an adhesive liquid is applied onto a circuit (element)-formed surface of a semiconductor wafer W. The application is conducted by using a spinner or the like. The material for the adhesive liquid is a novolac-type phenol resin. - Next, the adhesive liquid undergoes preliminary drying, so that its flowability is reduced and it can keep its shape as an
adhesive layer 1. For the preliminary drying, heating is conducted for 5 minutes at a temperature of 80° C. by using an oven. The thickness of theadhesive layer 1 is determined based on the irregularities of the circuit which has been formed on the surface of the semiconductor wafer W. If a sufficient thickness is not obtained by one application, application and preliminary drying are repeated a plurality of times. In this instance, the drying degree is adjusted to be higher with respect to preliminary drying for the adhesive layers other than the top layer, so that the flowability of the adhesive layers other than the top layer can be reduced. - Next, a supporting
plate 2 is attached to the semiconductor wafer W on which theadhesive layer 1 of a desired thickness has been formed. As shown inFIGS. 2 and 3 , the diameter of the supportingplate 2 is slightly larger than that of the semiconductor wafer W (by 2 mm in the radius). Also, the supportingplate 2 is made of an alloy of iron and nickel (alloy of 36% nickel: Invar) having a thickness of approximately 0.5 mm, and penetratingholes 3 having a diameter of approximately 0.5 mm are formed at a pitch of approximately 0.7 mm in the supportingplate 2. The outer peripheral portion of the supportingplate 2 is aflat portion 4 in which no penetrating hole is formed. - As shown in
FIG. 3 , theflat portion 4 is outside from the area covered by the edge portion of the semiconductor wafer W when the supportingplate 2 is laid onto the semiconductor wafer W. Since the semiconductor wafer W is thin, cracking or chipping easily occurs. If the edge portion of the semiconductor wafer W is within the area of the penetrating holes, this portion will have no support and easily crack or chip due to hydraulic pressure of a grinding liquid or pressure of a grinder. Therefore, in the embodiment, the edge portion of the semiconductor wafer W is located at theflat portion 4. - The supporting
plate 2 can be made of a magnetic material. By doing so, it is possible to employ a magnet at the time of stripping and make the structure of the apparatus simple compared to the conventional case where alumina, aluminum nitride, boron nitride, or silicon carbide is used as a protecting base. - However, the supporting plate is not limited to the above-mentioned one. For example, the diameter of the supporting plate may be the same as that of the substrate. The one having no
flat portion 4 is also possible, in which the penetrating holes are formed in the peripheral portion. In addition, ceramic or glass may be used as the material of the supporting plate. Incidentally, the diameter of the penetratingholes 3 is preferably 0.3-0.5 mm, and the pitch of the penetratingholes 3 is preferably 0.5-1.0 mm. - An attaching apparatus as shown in
FIG. 4 is used for attaching the supportingplate 2 to the semiconductor wafer W. The attaching apparatus 5 comprises abottom plate 51 and atop plate 52 which is positioned above thebottom plate 51. Thetop plate 52 is lifted and lowered by driving amotor 53. Asintered plate 54 of ceramic is fixed to the lower surface of thetop plate 52, and anexhaust pipe 55 is connected to thesintered plate 54. - In operation, the semiconductor wafer W and the supporting
plate 2 are set on thebottom plate 51 in a state where the semiconductor wafer W is positioned below and the supportingplate 2 is positioned above. Themotor 53 is driven so as to lower thetop plate 52, and thesintered plate 54 is pushed onto the supportingplate 2. At this time, heating (200° C. or less) may be performed simultaneously, so that the solvent of theadhesive layer 1 can be removed via thesintered plate 54 and theexhaust pipe 55. - Next, the semiconductor wafer W and the supporting
plate 2 which have been united with respect to each other are taken from the attaching apparatus 5. The rear surface (B-surface) of the semiconductor wafer W is ground by agrinder 10, so that the semiconductor wafer W is thinned. Incidentally, water (grinding liquid) is supplied to the rear surface of the semiconductor wafer W in order to control friction heat generated between thegrinder 10 and the semiconductor wafer W while grinding. Since a non-soluble material, which is not dissolved into water but dissolved into alcohol, is selected as the adhesive, it is possible to prevent the supportingplate 2 from stripping from the semiconductor wafer W at the time of grinding. - A circuit is formed on the rear surface (B-surface) of the semiconductor wafer W if needed, and thereafter the rear surface is fixed onto a dicing
tape 11. The dicingtape 11 has an adhesive ability, and also is retained by a dicingframe 12. - Next, as shown in
FIG. 5 , alcohol is poured from above the supportingplate 2. The alcohol reaches theadhesive layer 1 through the penetratingholes 3 of the supportingplate 2, dissolves and removes theadhesive layer 1. In this instance, by spinning theframe 12 with a spinner which is not shown in the drawing, the alcohol can be spread over the whole surface of theadhesive layer 1 in a short period of time. While the spinning is being performed, it is preferable to apply pure water to the dicing tape so as to reduce the concentration of the solvent which comes into contact with the dicing tape. As for the alcohol, it is preferable to select the one whose molecular weight is small such as ethanol or methanol because alcohol having a smaller molecular weight can dissolve the adhesive more easily. Several kinds of alcohol may be mixed. Table 1 shows the comparisons of ethanol, methanol, a mixed solution of ethanol and water, and a mixed solution of methanol and water with respect to how much time it takes to complete the stripping. As seen from Table 1, when the ratio of alcohol and water is 1:1 or more, stripping can be completed in a short period of time. Instead of alcohol, it is possible to use ketone or a mixed solution of alcohol and ketone. Also, if the temperature of the solvent is adjusted to be in a range of 25-50° C., the time required for stripping can be reduced furthermore.TABLE 1 alcohol alone alcohol 1: water 1alcohol 1: water 2ethanol 3 minutes and 6 minutes 15 minutes 30 seconds methanol 3 minutes 6 minutes 17-19 minutes - An embodiment of the solvent supplying means is shown in
FIG. 6 . In this embodiment, the solvent supplying means is comprised of a solvent supplyingplate 60, and O-rings 61 which are provided in the lower surface of the solvent supplyingplate 60. A solvent (stripping solution) supplyingpipe 62 and a solvent dischargingpipe 63 are connected to the solvent supplyingplate 60. In operation, the solvent supplyingmeans 60 in a state shownFIG. 6 (a) is lowered, and thereby the solvent supplyingmeans 60 is laid onto the upper surface of the supportingplate 2 via the O-rings 61 as shown inFIG. 6 (b). Next, a solvent is supplied from the solvent supplyingpipe 62 to the space surrounded by the supportingplate 2, the O-rings 61 and the solvent supplyingplate 60. The solvent passes through the penetratingholes 3 formed in the supportingplate 2, dissolves and removes theadhesive layer 1. - Since the space to which a solvent is supplied is confined by the O-
rings 61, it is possible to prevent the solvent from falling down to the dicingtape 11 and coming into contact with the dicingtape 11 as much as possible. In addition, it is possible to prevent the adhesive of the tape from coming into contact with the surface of the wafer. - As a means for supplying a solvent such as alcohol from the outside of the supporting
plate 2 to theadhesive layer 1, the semiconductor wafer W to which the supportingplate 2 has been attached may be immersed in a tank filled with a solvent. In this case, ultrasonic vibration can make this process more effective. - After the
adhesive layer 1 is dissolved in a manner mentioned above, the supportingplate 2 is removed. In the embodiment, theframe 12 is spun so as to remove the excessive solvent from the surface of the supportingplate 2. Next, amagnet 15 fixed to the tip end of anarm 14 is brought close to the supportingplate 2, and themagnet 15 is allowed to attract the supportingplate 2 by magnetic force. Next, thearm 14 is lifted obliquely, and the supportingplate 2 is stripped gradually from the periphery thereof. - After the supporting
plate 2 is removed, the semiconductor wafer W is cut into a chip size by using adicing device 13. After the cutting, the dicingtape 11 is irradiated with ultraviolet rays so as to reduce the adhesive ability of the dicingtape 11, so that the cut chip can be taken. - Effect of the Invention
- According to the present invention, a plate having a number of penetrating holes is used as the supporting plate for a substrate such as a semiconductor wafer, and a solvent such as alcohol is supplied from outside the supporting plate. Consequently, the solvent is allowed to reach the adhesive through the penetrating holes of the supporting plate, and it is possible to strip the semiconductor wafer from the supporting plate in a short period of time. No cracking or chipping of the semiconductor wafer occurs while stripping.
- As for the material of the supporting plate, the present invention uses a material whose thermal expansion coefficient (1.5×10−6 or less) is close to that of a silicon wafer (4.0×10−6 or less) such as an alloy of Ni and Fe, ceramic, and glass. Consequently, it is possible to prevent warpage from occurring due to the difference in the thermal expansion coefficient in a heat treatment. It is also possible to use a magnet for removing the supporting plate after the adhesive layer is dissolved by a solvent.
Claims (20)
1. A supporting plate having a diameter identical to or larger than a diameter of a substrate to which the supporting plate is attached,
wherein a plurality of penetrating holes are provided in a thickness direction of the supporting plate so as to allow a solvent to pass therethrough,
wherein a diameter of the penetrating holes is 0.3-0.5 mm, and a pitch of the penetrating holes is 0.5-1.0 mm; and
wherein the supporting plate comprises a low thermal expansion material having a thermal expansion coefficient of 1.5×10−6 or less.
2. The supporting plate according to claim 1 , wherein a diameter of the supporting plate is larger than that of the substrate, and an outer peripheral portion of the supporting plate, which is outside from an area covered by the edge portion of the substrate, is a flat portion in which no penetrating hole is formed.
3. The supporting plate according to claim 1 , wherein the supporting plate comprises an alloy of Ni and Fe.
4. The supporting plate according to claim 1 , wherein the supporting plate comprises glass.
5. The supporting plate according to claim 1 , wherein the supporting plate comprises ceramic.
6. The supporting plate according to claim 3 , wherein said alloy includes about 36% of said nickel.
7. The supporting plate according to claim 1 , wherein a diameter of the supporting plate is identical as that of the substrate, and an outer peripheral portion of the supporting plate includes the penetrating holes formed therein.
8. The supporting plate according to claim 1 , wherein the thickness of said supporting plate is approximately 0.5 mm.
9. A supporting plate having a diameter identical to or larger than a diameter of a substrate to which the supporting plate is attached,
wherein a plurality of penetrating holes are provided in the thickness direction of the supporting plate so as to allow a solvent to pass therethrough; and
wherein the supporting plate comprises a low thermal expansion material having a thermal expansion coefficient of 1.5×10−6 or less.
10. The supporting plate according to claim 9 , wherein the diameter of the penetrating holes is 0.3-0.5 mm, and a pitch of the penetrating holes is 0.5-1.0 mm.
11. The supporting plate according to claim 9 , wherein a diameter of the supporting plate is larger than that of the substrate, and an outer peripheral portion of the supporting plate, which is outside from an area covered by the edge portion of the substrate, is a flat portion in which no penetrating hole is formed.
12. The supporting plate according to claim 9 , wherein the supporting plate comprises an alloy of Ni and Fe.
13. The supporting plate according to claim 9 , wherein the supporting plate comprises glass.
14. The supporting plate according to claim 9 , wherein the supporting plate comprises ceramic.
15. The supporting plate according to claim 9 , wherein a thickness of said supporting plate is approximately 0.5 mm.
16. A supporting plate having a diameter identical to or larger than the diameter of a substrate to which the supporting plate is attached,
wherein a plurality of penetrating holes are provided in the thickness direction of the supporting plate so as to allow a solvent to pass therethrough; and
wherein a thermal expansion coefficient of the supporting plate is less than that of the substrate.
17. The supporting plate according to claim 16 , wherein said thermal expansion coefficients of said supporting plate and said substrate are about 1.5×10−6 or less and 4×10−6 or less, respectively.
18. The supporting plate according to claim 16 , the supporting plate is formed of material comprising one of an alloy of Ni and Fe, ceramic and glass.
19. The supporting plate according to claim 16 , wherein a diameter of the supporting plate is larger than that of the substrate, and an outer peripheral portion of the supporting plate, which is outside from an area covered by the edge portion of the substrate, is a flat portion in which no penetrating hole is formed.
20. The supporting plate according to claim 16 , wherein the diameter of the penetrating holes is in a range of 0.3-0.5 mm, and a pitch of the penetrating holes is in a range of 0.5-1.0 mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/682,754 US20070151674A1 (en) | 2003-12-01 | 2007-03-06 | Substrate supporting plate |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
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JP2003-402206 | 2003-12-01 | ||
JP2003402206 | 2003-12-01 | ||
JP2004-293158 | 2004-10-06 | ||
JP2004293158 | 2004-10-06 | ||
JP2004343547A JP2006135272A (en) | 2003-12-01 | 2004-11-29 | Substrate support plate and peeling method of support plate |
JP2004-343547 | 2004-11-29 | ||
US11/001,574 US7211168B2 (en) | 2003-12-01 | 2004-12-01 | Substrate supporting plate and stripping method for supporting plate |
US11/682,754 US20070151674A1 (en) | 2003-12-01 | 2007-03-06 | Substrate supporting plate |
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US11/001,574 Division US7211168B2 (en) | 2003-12-01 | 2004-12-01 | Substrate supporting plate and stripping method for supporting plate |
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US20070151674A1 true US20070151674A1 (en) | 2007-07-05 |
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US11/682,754 Abandoned US20070151674A1 (en) | 2003-12-01 | 2007-03-06 | Substrate supporting plate |
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JP (1) | JP2006135272A (en) |
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US9111981B2 (en) * | 2008-01-24 | 2015-08-18 | Brewer Science Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
JP5074940B2 (en) * | 2008-01-30 | 2012-11-14 | 東京応化工業株式会社 | Substrate processing method |
JP2009295695A (en) * | 2008-06-03 | 2009-12-17 | Sumco Corp | Semiconductor thin film-attached substrate, and method for manufacturing thereof |
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US8092628B2 (en) | 2008-10-31 | 2012-01-10 | Brewer Science Inc. | Cyclic olefin compositions for temporary wafer bonding |
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US8852391B2 (en) | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
JP5714859B2 (en) * | 2010-09-30 | 2015-05-07 | 芝浦メカトロニクス株式会社 | Substrate laminate, bonding apparatus, peeling apparatus, and substrate manufacturing method |
CN102486992A (en) * | 2010-12-01 | 2012-06-06 | 比亚迪股份有限公司 | Manufacturing method of semiconductor device |
US9919509B2 (en) * | 2011-01-07 | 2018-03-20 | Tokyo Electron Limited | Peeling device, peeling system and peeling method |
SG191990A1 (en) * | 2011-01-17 | 2013-08-30 | Ev Group E Thallner Gmbh | Method for stripping a product substrate from a carrier substrate |
CN103857610B (en) * | 2011-02-09 | 2016-01-20 | 必能信超声公司 | For separating of the method and apparatus of lamination |
US20120247686A1 (en) * | 2011-03-28 | 2012-10-04 | Memc Electronic Materials, Inc. | Systems and Methods For Ultrasonically Cleaving A Bonded Wafer Pair |
WO2012132175A1 (en) * | 2011-03-29 | 2012-10-04 | パナソニック株式会社 | Solder transfer base, method for producing solder transfer base, and method for transferring solder |
JP5149977B2 (en) * | 2011-04-15 | 2013-02-20 | リンテック株式会社 | Semiconductor wafer processing method |
JP2013033925A (en) * | 2011-07-01 | 2013-02-14 | Tokyo Electron Ltd | Cleaning method, program, computer storage medium, cleaning device, and peeling system |
DE102011113642B4 (en) | 2011-09-16 | 2013-06-06 | Austriamicrosystems Ag | Method of manufacturing a semiconductor device using a subcarrier |
JP5913877B2 (en) * | 2011-09-20 | 2016-04-27 | 東京応化工業株式会社 | Substrate processing method |
CN104025277A (en) | 2011-10-31 | 2014-09-03 | Memc电子材料有限公司 | Clamping apparatus for cleaving a bonded wafer structure and methods for cleaving |
JP2013107168A (en) * | 2011-11-21 | 2013-06-06 | Toyo Quality One Corp | Glass polishing method and laminated sheet used therefor |
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JP6389181B2 (en) * | 2012-09-19 | 2018-09-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | How to bond substrates |
JP5460809B1 (en) * | 2012-10-17 | 2014-04-02 | 古河電気工業株式会社 | Adhesive tape for semiconductor processing |
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WO2014117853A1 (en) * | 2013-01-31 | 2014-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Carrier substrate and method for fixing a substrate structure |
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US9269603B2 (en) * | 2013-05-09 | 2016-02-23 | Globalfoundries Inc. | Temporary liquid thermal interface material for surface tension adhesion and thermal control |
WO2015019916A1 (en) * | 2013-08-07 | 2015-02-12 | 旭硝子株式会社 | Method for processing plate-shaped body, method for manufacturing electronic device, and laminated article |
TW201519725A (en) * | 2013-11-14 | 2015-05-16 | Wintek Corp | Semifinished electric device, electric device and menufacturing method thereof |
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JP2016146449A (en) * | 2015-02-09 | 2016-08-12 | トヨタ自動車株式会社 | Semiconductor device manufacturing method |
WO2016142238A1 (en) | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
WO2016142240A1 (en) | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
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CN110676219B (en) * | 2019-10-31 | 2021-05-25 | 合肥新汇成微电子股份有限公司 | Wafer cutting processing method for coping with vacuum abnormity |
US11791212B2 (en) * | 2019-12-13 | 2023-10-17 | Micron Technology, Inc. | Thin die release for semiconductor device assembly |
JP2024022853A (en) | 2022-08-08 | 2024-02-21 | 日東電工株式会社 | Method for processing workpiece and workpiece processing device |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3762038A (en) * | 1970-09-09 | 1973-10-02 | Texas Instruments Inc | Thermal displays using air isolated integrated circuits and methods of making same |
US3988196A (en) * | 1967-10-09 | 1976-10-26 | Western Electric Company, Inc. | Apparatus for transferring an oriented array of articles |
US4247590A (en) * | 1976-12-08 | 1981-01-27 | Sharp Kabushiki Kaisha | Ceramic plate for supporting a semiconductor wafer |
US4466852A (en) * | 1983-10-27 | 1984-08-21 | At&T Technologies, Inc. | Method and apparatus for demounting wafers |
US4530776A (en) * | 1983-02-28 | 1985-07-23 | Kaikin Kogyo Co., Ltd. | Cleaning composition for wax removal |
US4866501A (en) * | 1985-12-16 | 1989-09-12 | American Telephone And Telegraph Company At&T Bell Laboratories | Wafer scale integration |
US5266824A (en) * | 1991-03-15 | 1993-11-30 | Shin-Etsu Handotai Co., Ltd. | SOI semiconductor substrate |
US5273615A (en) * | 1992-04-06 | 1993-12-28 | Motorola, Inc. | Apparatus and method for handling fragile semiconductor wafers |
US5493175A (en) * | 1992-02-06 | 1996-02-20 | Noritake Co., Ltd. | Plasma display panel |
US5800665A (en) * | 1995-02-10 | 1998-09-01 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for fabricating semiconductor device |
US6076585A (en) * | 1998-03-02 | 2000-06-20 | Motorola, Inc. | Method of manufacturing a semiconductor device and apparatus therefor |
US6270002B1 (en) * | 1997-09-10 | 2001-08-07 | Nippon Micrometal Co., Ltd. | Ball arrangement method and ball arrangement apparatus |
US6491083B2 (en) * | 2001-02-06 | 2002-12-10 | Anadigics, Inc. | Wafer demount receptacle for separation of thinned wafer from mounting carrier |
US6492195B2 (en) * | 1999-12-24 | 2002-12-10 | Hitachi, Ltd. | Method of thinning a semiconductor substrate using a perforated support substrate |
US20040235269A1 (en) * | 2002-10-18 | 2004-11-25 | Masahiko Kitamura | Semiconductor wafer protective device and semiconductor wafer treatment method |
US7052934B2 (en) * | 2003-03-27 | 2006-05-30 | Sharp Kabushiki Kaisha | Fabrication method of semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3440333B2 (en) | 1993-04-14 | 2003-08-25 | 大日本印刷株式会社 | Shadow mask |
JP2001077304A (en) | 1999-06-28 | 2001-03-23 | Mitsubishi Gas Chem Co Inc | Method for manufacturing electronic parts |
JP2002203821A (en) | 2000-12-28 | 2002-07-19 | Mitsubishi Gas Chem Co Inc | Adhering and peeling method |
JP4497737B2 (en) | 2001-03-12 | 2010-07-07 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
-
2004
- 2004-11-29 JP JP2004343547A patent/JP2006135272A/en active Pending
- 2004-12-01 US US11/001,574 patent/US7211168B2/en not_active Expired - Fee Related
- 2004-12-01 TW TW093137045A patent/TWI377642B/en active
- 2004-12-01 CN CNB200410082083XA patent/CN100375262C/en active Active
- 2004-12-01 KR KR1020040099726A patent/KR20050053019A/en not_active Application Discontinuation
-
2007
- 2007-03-06 US US11/682,754 patent/US20070151674A1/en not_active Abandoned
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3988196A (en) * | 1967-10-09 | 1976-10-26 | Western Electric Company, Inc. | Apparatus for transferring an oriented array of articles |
US3762038A (en) * | 1970-09-09 | 1973-10-02 | Texas Instruments Inc | Thermal displays using air isolated integrated circuits and methods of making same |
US4247590A (en) * | 1976-12-08 | 1981-01-27 | Sharp Kabushiki Kaisha | Ceramic plate for supporting a semiconductor wafer |
US4530776A (en) * | 1983-02-28 | 1985-07-23 | Kaikin Kogyo Co., Ltd. | Cleaning composition for wax removal |
US4466852A (en) * | 1983-10-27 | 1984-08-21 | At&T Technologies, Inc. | Method and apparatus for demounting wafers |
US4866501A (en) * | 1985-12-16 | 1989-09-12 | American Telephone And Telegraph Company At&T Bell Laboratories | Wafer scale integration |
US5266824A (en) * | 1991-03-15 | 1993-11-30 | Shin-Etsu Handotai Co., Ltd. | SOI semiconductor substrate |
US5493175A (en) * | 1992-02-06 | 1996-02-20 | Noritake Co., Ltd. | Plasma display panel |
US5273615A (en) * | 1992-04-06 | 1993-12-28 | Motorola, Inc. | Apparatus and method for handling fragile semiconductor wafers |
US5800665A (en) * | 1995-02-10 | 1998-09-01 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for fabricating semiconductor device |
US6270002B1 (en) * | 1997-09-10 | 2001-08-07 | Nippon Micrometal Co., Ltd. | Ball arrangement method and ball arrangement apparatus |
US6076585A (en) * | 1998-03-02 | 2000-06-20 | Motorola, Inc. | Method of manufacturing a semiconductor device and apparatus therefor |
US6492195B2 (en) * | 1999-12-24 | 2002-12-10 | Hitachi, Ltd. | Method of thinning a semiconductor substrate using a perforated support substrate |
US6491083B2 (en) * | 2001-02-06 | 2002-12-10 | Anadigics, Inc. | Wafer demount receptacle for separation of thinned wafer from mounting carrier |
US20040235269A1 (en) * | 2002-10-18 | 2004-11-25 | Masahiko Kitamura | Semiconductor wafer protective device and semiconductor wafer treatment method |
US7052934B2 (en) * | 2003-03-27 | 2006-05-30 | Sharp Kabushiki Kaisha | Fabrication method of semiconductor device |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7504316B2 (en) * | 2004-03-24 | 2009-03-17 | Nitto Denko Corporation | Method and device for separating a reinforcing-plate fixed to a reinforced semiconductor wafer |
US20050215030A1 (en) * | 2004-03-24 | 2005-09-29 | Masayuki Yamamoto | Method and device for separating a reinforcing-plate fixed to a reinforced semiconductor wafer |
US20090139662A1 (en) * | 2007-12-03 | 2009-06-04 | Tokyo Ohka Kogyo Co., Ltd | Separating device |
US8186410B2 (en) | 2007-12-03 | 2012-05-29 | Tokyo Ohka Kogyo Co., Ltd. | Separating device |
US20090197070A1 (en) * | 2008-02-04 | 2009-08-06 | Tokyo Ohka Kogyo Co., Ltd. | Support plate |
US8181660B2 (en) * | 2008-02-29 | 2012-05-22 | Tokyo Ohka Kogyo Co., Ltd. | Treatment liquid permeation unit and treating apparatus |
US20090218050A1 (en) * | 2008-02-29 | 2009-09-03 | Tokyo Ohka Kogyo Co., Ltd. | Treatment liquid permeation unit and treating apparatus |
TWI407524B (en) * | 2008-02-29 | 2013-09-01 | Tokyo Ohka Kogyo Co Ltd | Treatment liquid permeation unit and treating apparatus |
US20090218460A1 (en) * | 2008-03-03 | 2009-09-03 | Tokyo Ohka Kogyo Co., Ltd. | Sucking and holding device |
US8297568B2 (en) | 2008-03-03 | 2012-10-30 | Tokyo Ohka Kogyo Co., Ltd. | Sucking and holding device |
US20090314438A1 (en) * | 2008-06-18 | 2009-12-24 | Tokyo Ohka Kogyo Co., Ltd. | Supporting plate peeling apparatus |
US20100159191A1 (en) * | 2008-12-19 | 2010-06-24 | Hirofumi Imai | Processed substrate and method for manufacturing same |
US9017932B2 (en) | 2008-12-19 | 2015-04-28 | Tokyo Ohka Kogyo Co., Ltd. | Processed substrate and method for manufacturing same |
US20100319209A1 (en) * | 2009-06-22 | 2010-12-23 | Akihiko Nakamura | Alignment apparatus and alignment method |
US8205349B2 (en) | 2009-06-22 | 2012-06-26 | Tokyo Ohka Kogyo Co., Ltd. | Alignment apparatus and alignment method |
US8882930B2 (en) | 2010-06-04 | 2014-11-11 | Tokyo Ohka Kogyo Co., Ltd. | Method for processing process-target object |
US8696864B2 (en) | 2012-01-26 | 2014-04-15 | Promerus, Llc | Room temperature debonding composition, method and stack |
US9117861B2 (en) | 2012-01-26 | 2015-08-25 | Promerus, Llc | Room temperature debonding composition, method and stack |
US20130252356A1 (en) * | 2012-03-22 | 2013-09-26 | Kabushiki Kaisha Toshiba | Supporting substrate, method for fabricating semiconductor device, and method for inspecting semiconductor device |
CN104943320A (en) * | 2015-05-18 | 2015-09-30 | 京东方科技集团股份有限公司 | Base plate laminating method |
Also Published As
Publication number | Publication date |
---|---|
JP2006135272A (en) | 2006-05-25 |
US20050173064A1 (en) | 2005-08-11 |
US7211168B2 (en) | 2007-05-01 |
KR20050053019A (en) | 2005-06-07 |
TWI377642B (en) | 2012-11-21 |
TW200527579A (en) | 2005-08-16 |
CN100375262C (en) | 2008-03-12 |
CN1645591A (en) | 2005-07-27 |
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