CN1483668A - 一种碳纳米管阵列生长方法 - Google Patents
一种碳纳米管阵列生长方法 Download PDFInfo
- Publication number
- CN1483668A CN1483668A CNA02134776XA CN02134776A CN1483668A CN 1483668 A CN1483668 A CN 1483668A CN A02134776X A CNA02134776X A CN A02134776XA CN 02134776 A CN02134776 A CN 02134776A CN 1483668 A CN1483668 A CN 1483668A
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- Prior art keywords
- pipe array
- carbon nano
- nano pipe
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- growth method
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB02134776XA CN1248959C (zh) | 2002-09-17 | 2002-09-17 | 一种碳纳米管阵列生长方法 |
US10/334,547 US7754182B2 (en) | 2002-09-17 | 2002-12-31 | Carbon nanotube array and method for forming same |
JP2003076542A JP3850380B2 (ja) | 2002-09-17 | 2003-03-19 | 炭素ナノチューブのマトリックスの成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB02134776XA CN1248959C (zh) | 2002-09-17 | 2002-09-17 | 一种碳纳米管阵列生长方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1483668A true CN1483668A (zh) | 2004-03-24 |
CN1248959C CN1248959C (zh) | 2006-04-05 |
Family
ID=31983682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB02134776XA Expired - Lifetime CN1248959C (zh) | 2002-09-17 | 2002-09-17 | 一种碳纳米管阵列生长方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7754182B2 (zh) |
JP (1) | JP3850380B2 (zh) |
CN (1) | CN1248959C (zh) |
Cited By (19)
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---|---|---|---|---|
CN100337981C (zh) * | 2005-03-24 | 2007-09-19 | 清华大学 | 热界面材料及其制造方法 |
CN100337910C (zh) * | 2005-03-31 | 2007-09-19 | 清华大学 | 一种碳纳米管阵列的生长方法 |
US7301232B2 (en) | 2004-08-13 | 2007-11-27 | Hon Hai Precision Industry Co., Ltd. | Integrated circuit package with carbon nanotube array heat conductor |
CN100376478C (zh) * | 2005-04-22 | 2008-03-26 | 清华大学 | 碳纳米管阵列结构的制备装置 |
CN100395887C (zh) * | 2004-08-14 | 2008-06-18 | 鸿富锦精密工业(深圳)有限公司 | 集成电路封装结构及其制造方法 |
CN100462301C (zh) * | 2005-12-09 | 2009-02-18 | 清华大学 | 一种碳纳米管阵列的制备方法 |
CN1948142B (zh) * | 2005-10-12 | 2010-09-08 | 王洋 | 碳纳米管阵列其制备方法及在制备天线阵列中的应用 |
CN101205059B (zh) * | 2006-12-20 | 2010-09-29 | 清华大学 | 碳纳米管阵列的制备方法 |
CN101857460A (zh) * | 2010-05-20 | 2010-10-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | 纺丝用碳纳米管阵列的制备方法 |
CN1964918B (zh) * | 2004-06-08 | 2010-12-29 | 住友电气工业株式会社 | 制备碳纳米结构体的方法 |
CN101205060B (zh) * | 2006-12-20 | 2011-05-04 | 清华大学 | 碳纳米管阵列的制备方法 |
CN101365650B (zh) * | 2006-01-06 | 2012-07-18 | 独立行政法人产业技术综合研究所 | 定向碳纳米管整体集合体 |
CN1891780B (zh) * | 2005-07-01 | 2013-04-24 | 清华大学 | 热界面材料及其制备方法 |
CN101365830B (zh) * | 2005-06-28 | 2013-06-12 | 俄克拉荷马州大学评议会 | 生长和收获碳纳米管的方法 |
CN101636436B (zh) * | 2007-02-22 | 2014-04-16 | 道康宁公司 | 制备导电薄膜的方法和由该方法制得的制品 |
CN105568248A (zh) * | 2015-12-23 | 2016-05-11 | 北京控制工程研究所 | 一种在钛合金基底上控制碳纳米管生长定向性的方法 |
CN107597118A (zh) * | 2017-09-01 | 2018-01-19 | 哈尔滨万鑫石墨谷科技有限公司 | 一种制备束丛状碳纳米管用催化剂、其制备方法及束丛状碳纳米管 |
CN109650832A (zh) * | 2019-01-12 | 2019-04-19 | 张永华 | 一种耐压烧结砖 |
TWI694127B (zh) * | 2017-12-28 | 2020-05-21 | 鴻海精密工業股份有限公司 | 一種黏結方法 |
Families Citing this family (60)
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CN1282216C (zh) * | 2002-09-16 | 2006-10-25 | 清华大学 | 一种灯丝及其制备方法 |
US7656027B2 (en) * | 2003-01-24 | 2010-02-02 | Nanoconduction, Inc. | In-chip structures and methods for removing heat from integrated circuits |
US7273095B2 (en) | 2003-03-11 | 2007-09-25 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Nanoengineered thermal materials based on carbon nanotube array composites |
US7109581B2 (en) * | 2003-08-25 | 2006-09-19 | Nanoconduction, Inc. | System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler |
US7477527B2 (en) * | 2005-03-21 | 2009-01-13 | Nanoconduction, Inc. | Apparatus for attaching a cooling structure to an integrated circuit |
US7538422B2 (en) | 2003-08-25 | 2009-05-26 | Nanoconduction Inc. | Integrated circuit micro-cooler having multi-layers of tubes of a CNT array |
US8048688B2 (en) * | 2006-10-24 | 2011-11-01 | Samsung Electronics Co., Ltd. | Method and apparatus for evaluation and improvement of mechanical and thermal properties of CNT/CNF arrays |
US7732918B2 (en) * | 2003-08-25 | 2010-06-08 | Nanoconduction, Inc. | Vapor chamber heat sink having a carbon nanotube fluid interface |
US8075863B2 (en) | 2004-05-26 | 2011-12-13 | Massachusetts Institute Of Technology | Methods and devices for growth and/or assembly of nanostructures |
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TWI388042B (zh) * | 2004-11-04 | 2013-03-01 | Taiwan Semiconductor Mfg | 基於奈米管基板之積體電路 |
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US8926933B2 (en) | 2004-11-09 | 2015-01-06 | The Board Of Regents Of The University Of Texas System | Fabrication of twisted and non-twisted nanofiber yarns |
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NO2749379T3 (zh) | 2012-04-16 | 2018-07-28 | ||
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US10115844B2 (en) | 2013-03-15 | 2018-10-30 | Seerstone Llc | Electrodes comprising nanostructured carbon |
EP3129133A4 (en) | 2013-03-15 | 2018-01-10 | Seerstone LLC | Systems for producing solid carbon by reducing carbon oxides |
WO2018022999A1 (en) | 2016-07-28 | 2018-02-01 | Seerstone Llc. | Solid carbon products comprising compressed carbon nanotubes in a container and methods of forming same |
CN114624798B (zh) * | 2020-12-14 | 2023-05-16 | 清华大学 | 光吸收体及其制备方法 |
CN115806287A (zh) * | 2021-09-15 | 2023-03-17 | 江苏天奈科技股份有限公司 | 阵列碳纳米管及制备阵列碳纳米管和片层状催化剂的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6445006B1 (en) * | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
US6232706B1 (en) * | 1998-11-12 | 2001-05-15 | The Board Of Trustees Of The Leland Stanford Junior University | Self-oriented bundles of carbon nanotubes and method of making same |
US6361861B2 (en) * | 1999-06-14 | 2002-03-26 | Battelle Memorial Institute | Carbon nanotubes on a substrate |
US6582673B1 (en) * | 2000-03-17 | 2003-06-24 | University Of Central Florida | Carbon nanotube with a graphitic outer layer: process and application |
KR100382879B1 (ko) * | 2000-09-22 | 2003-05-09 | 일진나노텍 주식회사 | 탄소 나노튜브 합성 방법 및 이에 이용되는 탄소 나노튜브합성장치. |
US6858197B1 (en) * | 2002-03-13 | 2005-02-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Controlled patterning and growth of single wall and multi-wall carbon nanotubes |
-
2002
- 2002-09-17 CN CNB02134776XA patent/CN1248959C/zh not_active Expired - Lifetime
- 2002-12-31 US US10/334,547 patent/US7754182B2/en active Active
-
2003
- 2003-03-19 JP JP2003076542A patent/JP3850380B2/ja not_active Expired - Lifetime
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101365830B (zh) * | 2005-06-28 | 2013-06-12 | 俄克拉荷马州大学评议会 | 生长和收获碳纳米管的方法 |
CN1891780B (zh) * | 2005-07-01 | 2013-04-24 | 清华大学 | 热界面材料及其制备方法 |
CN1948142B (zh) * | 2005-10-12 | 2010-09-08 | 王洋 | 碳纳米管阵列其制备方法及在制备天线阵列中的应用 |
CN100462301C (zh) * | 2005-12-09 | 2009-02-18 | 清华大学 | 一种碳纳米管阵列的制备方法 |
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CN101205060B (zh) * | 2006-12-20 | 2011-05-04 | 清华大学 | 碳纳米管阵列的制备方法 |
CN101205059B (zh) * | 2006-12-20 | 2010-09-29 | 清华大学 | 碳纳米管阵列的制备方法 |
CN101636436B (zh) * | 2007-02-22 | 2014-04-16 | 道康宁公司 | 制备导电薄膜的方法和由该方法制得的制品 |
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CN105568248A (zh) * | 2015-12-23 | 2016-05-11 | 北京控制工程研究所 | 一种在钛合金基底上控制碳纳米管生长定向性的方法 |
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CN107597118B (zh) * | 2017-09-01 | 2020-07-17 | 哈尔滨万鑫石墨谷科技有限公司 | 一种制备束丛状碳纳米管用催化剂、其制备方法及束丛状碳纳米管 |
TWI694127B (zh) * | 2017-12-28 | 2020-05-21 | 鴻海精密工業股份有限公司 | 一種黏結方法 |
CN109650832A (zh) * | 2019-01-12 | 2019-04-19 | 张永华 | 一种耐压烧结砖 |
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US20040053053A1 (en) | 2004-03-18 |
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