CN1353863A - 具有降低接通电阻的超级自对准的沟-栅双扩散金属氧化物半导体器件 - Google Patents
具有降低接通电阻的超级自对准的沟-栅双扩散金属氧化物半导体器件 Download PDFInfo
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Abstract
Description
特征 | 特性 | 益处/优点 |
单元密度 | 高密度D=100Mcells/cm2=645Mcells/in2 | 较低的沟道电阻(许多平行单元/区域) |
单元间距 | 较小YSB=0.5微米,YG=0.5微米,间距=1微米 | 较低的沟道电阻均匀的漏极电流能够5XI-线条分级 |
对准 | 超自对准SSA沟/顶部氧化物/台面/接触区 | 最大的接触面积避免了栅源短接较小的A/W |
台阶覆盖 | 较低的台阶高度,顶部氧化物延伸到台面之下 | 良好的电迁移特性;较低的横向金属电阻 |
栅极周长A/W | 较小的A/W=0.5微米 | 较低的沟道电阻, |
较高的gm,漏极到本体电容量较小 | ||
阵列的几何形状 | YSB=YG的带 | 良好的本体区没有角落区损失与方形单元的A/W相同 |
沟的底部氧化物(可选) | 较厚(1千埃至3千埃) | 较低的栅-漏覆盖电容较低的栅极电荷最小的FPI雪崩 |
沟的侧壁栅氧化物 | 较薄(50埃至700埃) | 较高的跨导较低的沟道电阻较低的阈值没有发生穿通 |
ESD保护 | poly二极管 | 保护薄栅极ESD容差DC过电压箝位 |
特征 | 范围 | 目标值 | 要求 | P-沟道 |
N++衬底300 | 1至5mΩcm砷/磷 | 1至3mΩ-cm | 可能的最低的电阻率 | P++硼相同的规格 |
N-epi层267(厚度和掺杂浓度) | 1至10微米1015至4·1017cm-3磷 | 3微米 | 由BVDSS设定 | P-外延 |
应力减轻氧化物层275(厚度、退火温度和时间) | 30至700埃800至1100℃5至60分钟干燥的O2 | 90埃850℃15分钟 | 在后续过程中通过它注入砷;防止在多晶硅顶部氧化过程中氮化物升高 | 由于B+注入容易渗透所以层可以更厚;可取的是与用于N-沟道过程的相同 |
N埋入层265(注入剂量和能量) | 1012至5·1013cm-2500KeV至2.3MeVP+或P++ | 5·1012cm-2P++1.7MeV | 自表面的深度:XNBL(顶部)>3微米 | PBL注入1.3MeVB+或B++ |
特征 | 范围 | 目标值 | 要求 | P-沟道 |
氮化物层274淀积(CVD)(厚度) | 500至3000埃 | 2000埃 | B+本体注入必须渗透良好的氧化物腐蚀选择性 | P+本体注入必须渗透 |
氧化物层(未示出)淀积(厚度) | 200至5000埃 | 未示出(1000埃) | 在硅的蚀刻的过程中防止氮化物腐蚀 | 相同 |
沟掩模(掩模1)(间隙宽度) | 2至1.5微米线条&间隔 | 0.5微米 | 构图/蚀刻氧化物&氮化物 | 相同 |
沟蚀刻(深度) | 0.3至4微米深 | 2微米 | 圆整的角落 | 相同 |
陡峭的侧壁<100>对准 |
特征 | 范围 | 目标值 | 要求 | P-沟道 |
牺牲氧化物(厚度、退火温度和时间) | 70至200埃800至900℃15至40分钟干的O2 | 300埃850℃28分钟 | 消除随后的氧化物内腐蚀所带来的破坏 | 相同 |
较厚的底部氧化物层261(可选)(厚度) | 在沟的底部1000至3000埃 | 2000埃 | 各种方法方向性淀积/抗蚀剂内蚀刻侧壁氮化物/LOCOS | 相同 |
栅极氧化物层266(厚度、退火温度和时间) | 70至700埃800至950℃5至130分钟 | 175埃或300埃850℃16或60分钟 | 活性沟道栅极氧化物 | 相同 |
干燥的O2 | ||||
多晶硅层322(厚度) | 2000至12000埃在原位置掺杂的N+<75Ω/sq. | 7000埃18Ω/sq. | 栅极poly必须填充沟Xpoly1>1.4·yG/2 | 相同 |
多晶硅层322内蚀刻 | 在氮化物顶部之下源极底部之上 | 甚至带有氮化物 | 为进行本体注入,清除表面 | 相同 |
从氮化物的顶部清除氧化物 | 消除所有的氧化物(0至5000埃) | 3500埃 | 为随后的注入剥去氧化物 | 相同 |
特征 | 方位 | 目标值 | 要求 | P-沟道 |
本体掩模(掩模2)(光致抗蚀剂) | 除了末端以外没有小的掩模特征 | 在电路片边沿4微米 | 阻塞本体注入达MeV范围 | 相同但阻塞磷 |
本体注入(常规) | 1013至1014cm-260至150keV B+ | 6·1013cm-2,80keV | 在扩散之后;400至900Ω/sq | P+注入;120keV |
本体注入(高能量) | 8×1012至8×1013cm-2 800keV至3Mev硼 | 3×1013cm-2,1.6MkeV | 设定阈值V;避免穿通 | 磷注入,35%的更高的能量 |
深入扩散 | 1050至1150℃,6至15小时 | 1100℃12小时 | 1<XjB<2微米通常1.6微米 | 相同 |
特征 | 范围 | 目标值 | 要求 | P-沟道 |
多晶硅层278(厚度)和附面层的硼注入(剂量和能量) | 1000至8000埃未掺杂,则B+注入,20至80keV,1012至1013m-2 | 5000埃,则60keV3·1012m-2 | 当掺杂N-型并与poly1形成欧姆接触时,栅极poly必须填充沟 | 类似,但注入磷 |
多晶硅氧化物层328(厚度、退火温度和时间) | 70至700埃800至1000℃5至60分钟,干燥的O2 | 300埃850℃28分钟 | 在后续过程中通过它注入砷N+ | 更厚较好由于注入B+能够渗透 |
氮化物层330(厚度) | 500至3000埃 | 2000埃 | 良好的氧化物腐蚀选择性 | 类似 |
多晶硅掩模(掩模 | 0.5至3.5微米线条&间 | 1.5微米线条& | 构图/蚀刻氮化物/ | 相同 |
3) | 隔 | 间隔 | 氧化物&poly | |
多晶硅层278内蚀刻 | 在氮化物顶部之下在源极底部之上 | 甚至与氮化物底部一致 | 清除表面以便从本体注入 | 相同 |
特征 | 范围 | 目标值 | 要求 | P-沟道 |
多晶硅层278的氧化(厚度、退火温度和时间) | 800至3000埃800至1050℃5至80分钟 | 1500埃950℃50分钟 | 保护沟栅免于氧化物下降(dip)和金属短(自对准接触区) | 相同 |
剥去氮化物层274 | 清除所暴露的氮化物 | 清洁 | 对在下面poly良好的选择性 | 相同 |
源极掩模(光致抗蚀剂)掩模4 | 阻止砷注入 | 3微米的特征 | 限定poly二极管阴极和N+源极 | 阻止BF2注入 |
N+(砷)注入(能量和剂量) | 20至180keV1015至1016cm-2砷 | 100keV8·1015cm-2 | N+必须渗过最初的和poly氧化物 | BF2通常60keV |
特征 | 范围 | 目标值 | 要求 | P-沟道 |
氮化物层276(CVD)(厚度) | 500至4000埃 | 2000埃 | 保护末端、栅极总线&poly二极管 | 相同 |
接触区掩模(掩模5) | 腐蚀并清除在氮化物层276中的接触区开孔 | 清洁2微米接触区 | 在栅极总线上打开较小的特征部分 | 相同 |
P+(B)注入(能量和剂量) | 20至80keV BF2 +7·1014至3·1015cm-2 | Xj<0.8微米30keV2·1015cm-2 | Xj(P+)<xj(N+)以避免Vt变化 | 砷+60keV5·1015cm-2 |
氧化物浸渍(dip) | 清除开始的氧化物 | 清洁接触区 | 不清除在沟上的poly顶部氧化物 | 相同 |
阻挡层金属(组分和厚度) | Ti/TN300埃至2000埃RAT烧结 | 1000埃900℃20秒 | 与N+&P+硅欧姆接触,N+poly | 相同 |
特征 | 范围 | 目标值 | 要求 | P-沟道 |
P+掩模(光致抗蚀剂) | 阻止BF2注入 | 2微米的特征 | 限定本体接触区 | 阻止砷注入 |
P+注入(能量和剂量) | 20至80ekVBF2 +7·1014至8·1015cm-2 | 0.8微米 | 没有深度限制 | 砷+60keV5·1015cm-2 |
特征 | 范围 | 目标值 | 要求 | P-沟道 |
金属层269(厚度和成分) | 5至5微米AlCu,AlCuSi,AlSi | 3微米AlCu | 欧姆接触 | 相同 |
金属掩模(掩模6)(光致抗蚀剂/腐蚀) | 1至20微米线条1至3微米间隔 | 2微米线条和间隔 | 没有短接 | 相同 |
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US09/296,959 US6413822B2 (en) | 1999-04-22 | 1999-04-22 | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer |
US09/296,959 | 1999-04-22 |
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CNB2007101618092A Division CN100568470C (zh) | 1999-04-22 | 2000-04-21 | 超级自对准的沟-栅双扩散金属氧化物半导体器件 |
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Families Citing this family (267)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7084456B2 (en) * | 1999-05-25 | 2006-08-01 | Advanced Analogic Technologies, Inc. | Trench MOSFET with recessed clamping diode using graded doping |
US6291298B1 (en) * | 1999-05-25 | 2001-09-18 | Advanced Analogic Technologies, Inc. | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
US6555895B1 (en) * | 2000-07-17 | 2003-04-29 | General Semiconductor, Inc. | Devices and methods for addressing optical edge effects in connection with etched trenches |
US6921939B2 (en) * | 2000-07-20 | 2005-07-26 | Fairchild Semiconductor Corporation | Power MOSFET and method for forming same using a self-aligned body implant |
US7745289B2 (en) * | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
US6657256B2 (en) * | 2001-05-22 | 2003-12-02 | General Semiconductor, Inc. | Trench DMOS transistor having a zener diode for protection from electro-static discharge |
US7291884B2 (en) * | 2001-07-03 | 2007-11-06 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
US20060038223A1 (en) * | 2001-07-03 | 2006-02-23 | Siliconix Incorporated | Trench MOSFET having drain-drift region comprising stack of implanted regions |
US7033876B2 (en) * | 2001-07-03 | 2006-04-25 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same |
US7009247B2 (en) * | 2001-07-03 | 2006-03-07 | Siliconix Incorporated | Trench MIS device with thick oxide layer in bottom of gate contact trench |
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US6566710B1 (en) * | 2001-08-29 | 2003-05-20 | National Semiconductor Corporation | Power MOSFET cell with a crossed bar shaped body contact area |
US7045859B2 (en) * | 2001-09-05 | 2006-05-16 | International Rectifier Corporation | Trench fet with self aligned source and contact |
GB0122122D0 (en) | 2001-09-13 | 2001-10-31 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices and their manufacture |
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JP3701227B2 (ja) * | 2001-10-30 | 2005-09-28 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US6838722B2 (en) * | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
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US7701001B2 (en) | 2002-05-03 | 2010-04-20 | International Rectifier Corporation | Short channel trench power MOSFET with low threshold voltage |
JP2004022700A (ja) * | 2002-06-14 | 2004-01-22 | Sanyo Electric Co Ltd | 半導体装置 |
KR100473476B1 (ko) * | 2002-07-04 | 2005-03-10 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
US8629019B2 (en) | 2002-09-24 | 2014-01-14 | Vishay-Siliconix | Method of forming self aligned contacts for a power MOSFET |
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US6855985B2 (en) | 2002-09-29 | 2005-02-15 | Advanced Analogic Technologies, Inc. | Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology |
US7557395B2 (en) * | 2002-09-30 | 2009-07-07 | International Rectifier Corporation | Trench MOSFET technology for DC-DC converter applications |
JP2006501666A (ja) * | 2002-10-04 | 2006-01-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | パワー半導体デバイス |
US7141455B2 (en) * | 2002-11-25 | 2006-11-28 | Texas Instruments Incorporated | Method to manufacture LDMOS transistors with improved threshold voltage control |
FR2847593A1 (fr) * | 2002-11-26 | 2004-05-28 | St Microelectronics Sa | Procede et dispositif de realisation d'une couche de pentoxyde de tantale sur un materiau porteur, en particulier du niture de titane, et circuit integre incorporant une couche de pentoxyde de tantale |
US6861701B2 (en) | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
DE10316530A1 (de) * | 2003-04-10 | 2004-11-18 | Infineon Technologies Ag | Halbleiterbauelement und Verfahren |
TWI223448B (en) * | 2003-04-29 | 2004-11-01 | Mosel Vitelic Inc | DMOS device having a trenched bus structure |
GB0312512D0 (en) * | 2003-05-31 | 2003-07-09 | Koninkl Philips Electronics Nv | Termination structures for semiconductor devices and the manufacture thereof |
JP3906184B2 (ja) * | 2003-06-11 | 2007-04-18 | 株式会社東芝 | 半導体装置およびその製造方法 |
DE10350684B4 (de) * | 2003-10-30 | 2008-08-28 | Infineon Technologies Ag | Verfahren zur Herstellung einer Leistungstransistoranordnung und mit diesem Verfahren hergestellte Leistungstransistoranordnung |
US7368353B2 (en) * | 2003-11-04 | 2008-05-06 | International Rectifier Corporation | Trench power MOSFET with reduced gate resistance |
DE10353387B4 (de) * | 2003-11-14 | 2008-07-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer Leistungstransistoranordnung und Leistungstransistoranordnung |
US7279743B2 (en) * | 2003-12-02 | 2007-10-09 | Vishay-Siliconix | Closed cell trench metal-oxide-semiconductor field effect transistor |
US7259411B1 (en) * | 2003-12-04 | 2007-08-21 | National Semiconductor Corporation | Vertical MOS transistor |
JP4699692B2 (ja) * | 2003-12-26 | 2011-06-15 | ローム株式会社 | 半導体装置の製造方法および半導体装置 |
KR100529655B1 (ko) * | 2003-12-31 | 2005-11-17 | 동부아남반도체 주식회사 | 반도체 장치의 게이트 산화막 형성 방법 |
KR100574340B1 (ko) * | 2004-02-02 | 2006-04-26 | 삼성전자주식회사 | 반도체 장치 및 이의 형성 방법 |
US7405452B2 (en) * | 2004-02-02 | 2008-07-29 | Hamza Yilmaz | Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
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US7217976B2 (en) * | 2004-02-09 | 2007-05-15 | International Rectifier Corporation | Low temperature process and structures for polycide power MOSFET with ultra-shallow source |
JP4801323B2 (ja) * | 2004-02-13 | 2011-10-26 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
GB0405325D0 (en) * | 2004-03-10 | 2004-04-21 | Koninkl Philips Electronics Nv | Trench-gate transistors and their manufacture |
US7045857B2 (en) * | 2004-03-26 | 2006-05-16 | Siliconix Incorporated | Termination for trench MIS device having implanted drain-drift region |
US6927451B1 (en) * | 2004-03-26 | 2005-08-09 | Siliconix Incorporated | Termination for trench MIS device having implanted drain-drift region |
US8183629B2 (en) * | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
US7268395B2 (en) | 2004-06-04 | 2007-09-11 | International Rectifier Corporation | Deep trench super switch device |
US7402863B2 (en) * | 2004-06-21 | 2008-07-22 | International Rectifier Corporation | Trench FET with reduced mesa width and source contact inside active trench |
WO2006011882A1 (en) | 2004-06-30 | 2006-02-02 | Advanced Analogic Technologies, Inc. | Trench mosfet with recessed clamping diode |
US7102201B2 (en) * | 2004-07-15 | 2006-09-05 | International Business Machines Corporation | Strained semiconductor device structures |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
JP4913336B2 (ja) * | 2004-09-28 | 2012-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5135663B2 (ja) * | 2004-10-21 | 2013-02-06 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE102004063991B4 (de) * | 2004-10-29 | 2009-06-18 | Infineon Technologies Ag | Verfahren zur Herstellung von dotierten Halbleitergebieten in einem Halbleiterkörper eines lateralen Trenchtransistors |
US7371641B2 (en) * | 2004-10-29 | 2008-05-13 | International Rectifier Corporation | Method of making a trench MOSFET with deposited oxide |
US7501651B2 (en) * | 2004-11-30 | 2009-03-10 | Samsung Electronics Co., Ltd. | Test structure of semiconductor device |
FR2879024A1 (fr) * | 2004-12-08 | 2006-06-09 | St Microelectronics Sa | Peripherie de composant unipolaire vertical |
US9685524B2 (en) | 2005-03-11 | 2017-06-20 | Vishay-Siliconix | Narrow semiconductor trench structure |
JP4944383B2 (ja) * | 2005-03-25 | 2012-05-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8022468B1 (en) * | 2005-03-29 | 2011-09-20 | Spansion Llc | Ultraviolet radiation blocking interlayer dielectric |
DE102005014743B4 (de) * | 2005-03-31 | 2013-12-05 | Infineon Technologies Austria Ag | MOS-Feldplattentrench-Transistoreinrichtung |
AT504998A2 (de) | 2005-04-06 | 2008-09-15 | Fairchild Semiconductor | Trenched-gate-feldeffekttransistoren und verfahren zum bilden derselben |
JP4955222B2 (ja) * | 2005-05-20 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7179717B2 (en) * | 2005-05-25 | 2007-02-20 | Micron Technology, Inc. | Methods of forming integrated circuit devices |
US20060273380A1 (en) * | 2005-06-06 | 2006-12-07 | M-Mos Sdn.Bhd. | Source contact and metal scheme for high density trench MOSFET |
US20060273384A1 (en) * | 2005-06-06 | 2006-12-07 | M-Mos Sdn. Bhd. | Structure for avalanche improvement of ultra high density trench MOSFET |
US20060273390A1 (en) * | 2005-06-06 | 2006-12-07 | M-Mos Sdn. Bhd. | Gate contact and runners for high density trench MOSFET |
US7767493B2 (en) * | 2005-06-14 | 2010-08-03 | John Trezza | Post & penetration interconnection |
US7946331B2 (en) * | 2005-06-14 | 2011-05-24 | Cufer Asset Ltd. L.L.C. | Pin-type chip tooling |
US7786592B2 (en) | 2005-06-14 | 2010-08-31 | John Trezza | Chip capacitive coupling |
US8456015B2 (en) * | 2005-06-14 | 2013-06-04 | Cufer Asset Ltd. L.L.C. | Triaxial through-chip connection |
US7851348B2 (en) * | 2005-06-14 | 2010-12-14 | Abhay Misra | Routingless chip architecture |
US7687400B2 (en) * | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
US20060278996A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Active packaging |
US20060281303A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Tack & fuse chip bonding |
US7838997B2 (en) * | 2005-06-14 | 2010-11-23 | John Trezza | Remote chip attachment |
JP2007005657A (ja) * | 2005-06-24 | 2007-01-11 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP2007043123A (ja) * | 2005-07-01 | 2007-02-15 | Toshiba Corp | 半導体装置 |
US8264717B2 (en) * | 2005-07-11 | 2012-09-11 | Ricoh Company, Ltd. | Image forming apparatus, information processing apparatus, information processing method, information processing program and storage medium |
JP4939012B2 (ja) * | 2005-08-26 | 2012-05-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20070075360A1 (en) * | 2005-09-30 | 2007-04-05 | Alpha &Omega Semiconductor, Ltd. | Cobalt silicon contact barrier metal process for high density semiconductor power devices |
JP2007142087A (ja) * | 2005-11-17 | 2007-06-07 | Nec Electronics Corp | 半導体装置 |
TWI489557B (zh) | 2005-12-22 | 2015-06-21 | Vishay Siliconix | 高移動率p-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體 |
US7544545B2 (en) | 2005-12-28 | 2009-06-09 | Vishay-Siliconix | Trench polysilicon diode |
CN101361193B (zh) * | 2006-01-18 | 2013-07-10 | 维西埃-硅化物公司 | 具有高静电放电性能的浮动栅极结构 |
US7667265B2 (en) * | 2006-01-30 | 2010-02-23 | Fairchild Semiconductor Corporation | Varying mesa dimensions in high cell density trench MOSFET |
US8409954B2 (en) * | 2006-03-21 | 2013-04-02 | Vishay-Silconix | Ultra-low drain-source resistance power MOSFET |
US20070228463A1 (en) * | 2006-04-03 | 2007-10-04 | Jun Cai | Self-aligned complementary ldmos |
US8471390B2 (en) * | 2006-05-12 | 2013-06-25 | Vishay-Siliconix | Power MOSFET contact metallization |
US20070281460A1 (en) * | 2006-06-06 | 2007-12-06 | Cubic Wafer, Inc. | Front-end processed wafer having through-chip connections |
US20080042208A1 (en) * | 2006-08-16 | 2008-02-21 | Force Mos Technology Co., Ltd. | Trench mosfet with esd trench capacitor |
US20080042222A1 (en) * | 2006-08-16 | 2008-02-21 | Force Mos Technology Co., Ltd. | Trench mosfet with copper metal connections |
US7629646B2 (en) * | 2006-08-16 | 2009-12-08 | Force Mos Technology Co., Ltd. | Trench MOSFET with terraced gate and manufacturing method thereof |
US8476709B2 (en) | 2006-08-24 | 2013-07-02 | Infineon Technologies Ag | ESD protection device and method |
JP5511124B2 (ja) * | 2006-09-28 | 2014-06-04 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
JP2008085188A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
TWI496272B (zh) * | 2006-09-29 | 2015-08-11 | Fairchild Semiconductor | 用於功率金氧半導體場效電晶體之雙電壓多晶矽二極體靜電放電電路 |
US7374980B2 (en) * | 2006-10-13 | 2008-05-20 | International Business Machines Corporation | Field effect transistor with thin gate electrode and method of fabricating same |
US9748346B2 (en) * | 2014-11-25 | 2017-08-29 | Alpha And Omega Semiconductor Incorporated | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter |
JP2008130983A (ja) * | 2006-11-24 | 2008-06-05 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US9437729B2 (en) | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
US7670874B2 (en) * | 2007-02-16 | 2010-03-02 | John Trezza | Plated pillar package formation |
US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
US8368126B2 (en) | 2007-04-19 | 2013-02-05 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
US7511357B2 (en) * | 2007-04-20 | 2009-03-31 | Force-Mos Technology Corporation | Trenched MOSFETs with improved gate-drain (GD) clamp diodes |
JP5138274B2 (ja) * | 2007-05-25 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
JP4427561B2 (ja) * | 2007-05-29 | 2010-03-10 | 株式会社東芝 | 半導体装置 |
US7732848B2 (en) * | 2007-05-31 | 2010-06-08 | Infineon Technologies Ag | Power semiconductor device with improved heat dissipation |
US7646058B2 (en) * | 2007-06-05 | 2010-01-12 | Force-Mos Technology Corporation | Device configuration and method to manufacture trench MOSFET with solderable front metal |
US8217419B2 (en) * | 2007-06-15 | 2012-07-10 | Rohm Co., Ltd. | Semiconductor device |
TWI340435B (en) * | 2007-07-11 | 2011-04-11 | Nanya Technology Corp | Dynamic random access memory with electrostatic discharge structure and method for manufacturing the same |
US20090026533A1 (en) * | 2007-07-24 | 2009-01-29 | Force-Mos Technology Corporation | Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements |
KR100848781B1 (ko) * | 2007-08-14 | 2008-07-28 | 주식회사 동부하이텍 | 밀집한 패턴의 노광방법 |
JP2009076540A (ja) * | 2007-09-19 | 2009-04-09 | Nec Electronics Corp | 半導体装置 |
JP2009088198A (ja) * | 2007-09-28 | 2009-04-23 | Rohm Co Ltd | 半導体装置 |
JP5298488B2 (ja) | 2007-09-28 | 2013-09-25 | 富士電機株式会社 | 半導体装置 |
US7687352B2 (en) * | 2007-10-02 | 2010-03-30 | Inpower Semiconductor Co., Ltd. | Trench MOSFET and method of manufacture utilizing four masks |
US7799642B2 (en) | 2007-10-02 | 2010-09-21 | Inpower Semiconductor Co., Ltd. | Trench MOSFET and method of manufacture utilizing two masks |
US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
US7772668B2 (en) * | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
US10600902B2 (en) | 2008-02-13 | 2020-03-24 | Vishay SIliconix, LLC | Self-repairing field effect transisitor |
US8674434B2 (en) * | 2008-03-24 | 2014-03-18 | Micron Technology, Inc. | Impact ionization devices |
US20090242973A1 (en) | 2008-03-31 | 2009-10-01 | Alpha & Omega Semiconductor, Ltd. | Source and body contact structure for trench-dmos devices using polysilicon |
US7683369B2 (en) * | 2008-04-10 | 2010-03-23 | Alpha & Omega Semiconductor, Inc. | Structure for measuring body pinch resistance of high density trench MOSFET array |
JP5337470B2 (ja) * | 2008-04-21 | 2013-11-06 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
US7910439B2 (en) * | 2008-06-11 | 2011-03-22 | Maxpower Semiconductor Inc. | Super self-aligned trench MOSFET devices, methods, and systems |
US7936009B2 (en) * | 2008-07-09 | 2011-05-03 | Fairchild Semiconductor Corporation | Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein |
US8193579B2 (en) * | 2008-07-29 | 2012-06-05 | Rohm Co., Ltd. | Trench type semiconductor device and fabrication method for the same |
US7867852B2 (en) * | 2008-08-08 | 2011-01-11 | Alpha And Omega Semiconductor Incorporated | Super-self-aligned trench-dmos structure and method |
US7897462B2 (en) * | 2008-11-14 | 2011-03-01 | Semiconductor Components Industries, L.L.C. | Method of manufacturing semiconductor component with gate and shield electrodes in trenches |
JP5331497B2 (ja) * | 2008-11-27 | 2013-10-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
CN101764061B (zh) * | 2008-12-26 | 2012-05-30 | 马克斯半导体股份有限公司 | 功率金属氧化物半导体场效晶体管结构及其制程方法 |
US7911260B2 (en) * | 2009-02-02 | 2011-03-22 | Infineon Technologies Ag | Current control circuits |
US8164162B2 (en) * | 2009-06-11 | 2012-04-24 | Force Mos Technology Co., Ltd. | Power semiconductor devices integrated with clamp diodes sharing same gate metal pad |
US9443974B2 (en) * | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
US9425306B2 (en) | 2009-08-27 | 2016-08-23 | Vishay-Siliconix | Super junction trench power MOSFET devices |
US9230810B2 (en) | 2009-09-03 | 2016-01-05 | Vishay-Siliconix | System and method for substrate wafer back side and edge cross section seals |
JP2011071161A (ja) * | 2009-09-24 | 2011-04-07 | Toshiba Corp | 半導体素子及びその製造方法 |
US9431530B2 (en) | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
US9306056B2 (en) * | 2009-10-30 | 2016-04-05 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
US8604525B2 (en) | 2009-11-02 | 2013-12-10 | Vishay-Siliconix | Transistor structure with feed-through source-to-substrate contact |
US8575702B2 (en) * | 2009-11-27 | 2013-11-05 | Magnachip Semiconductor, Ltd. | Semiconductor device and method for fabricating semiconductor device |
JP5452195B2 (ja) | 2009-12-03 | 2014-03-26 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
US8217469B2 (en) * | 2009-12-11 | 2012-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact implement structure for high density design |
US8698232B2 (en) * | 2010-01-04 | 2014-04-15 | International Rectifier Corporation | Semiconductor device including a voltage controlled termination structure and method for fabricating same |
WO2011109559A2 (en) | 2010-03-02 | 2011-09-09 | Kyle Terrill | Structures and methods of fabricating dual gate devices |
US8431457B2 (en) | 2010-03-11 | 2013-04-30 | Alpha And Omega Semiconductor Incorporated | Method for fabricating a shielded gate trench MOS with improved source pickup layout |
US8143126B2 (en) | 2010-05-10 | 2012-03-27 | Freescale Semiconductor, Inc. | Method for forming a vertical MOS transistor |
US8373239B2 (en) | 2010-06-08 | 2013-02-12 | International Business Machines Corporation | Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric |
JP5691259B2 (ja) * | 2010-06-22 | 2015-04-01 | 株式会社デンソー | 半導体装置 |
US9224496B2 (en) | 2010-08-11 | 2015-12-29 | Shine C. Chung | Circuit and system of aggregated area anti-fuse in CMOS processes |
US10229746B2 (en) | 2010-08-20 | 2019-03-12 | Attopsemi Technology Co., Ltd | OTP memory with high data security |
US9251893B2 (en) | 2010-08-20 | 2016-02-02 | Shine C. Chung | Multiple-bit programmable resistive memory using diode as program selector |
US9431127B2 (en) | 2010-08-20 | 2016-08-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices |
US9236141B2 (en) | 2010-08-20 | 2016-01-12 | Shine C. Chung | Circuit and system of using junction diode of MOS as program selector for programmable resistive devices |
US9496033B2 (en) | 2010-08-20 | 2016-11-15 | Attopsemi Technology Co., Ltd | Method and system of programmable resistive devices with read capability using a low supply voltage |
US9070437B2 (en) | 2010-08-20 | 2015-06-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink |
US9818478B2 (en) | 2012-12-07 | 2017-11-14 | Attopsemi Technology Co., Ltd | Programmable resistive device and memory using diode as selector |
US10923204B2 (en) | 2010-08-20 | 2021-02-16 | Attopsemi Technology Co., Ltd | Fully testible OTP memory |
US8644049B2 (en) | 2010-08-20 | 2014-02-04 | Shine C. Chung | Circuit and system of using polysilicon diode as program selector for one-time programmable devices |
US9711237B2 (en) | 2010-08-20 | 2017-07-18 | Attopsemi Technology Co., Ltd. | Method and structure for reliable electrical fuse programming |
US9025357B2 (en) | 2010-08-20 | 2015-05-05 | Shine C. Chung | Programmable resistive memory unit with data and reference cells |
US10916317B2 (en) | 2010-08-20 | 2021-02-09 | Attopsemi Technology Co., Ltd | Programmable resistance memory on thin film transistor technology |
US9042153B2 (en) | 2010-08-20 | 2015-05-26 | Shine C. Chung | Programmable resistive memory unit with multiple cells to improve yield and reliability |
US9019742B2 (en) | 2010-08-20 | 2015-04-28 | Shine C. Chung | Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory |
US9460807B2 (en) | 2010-08-20 | 2016-10-04 | Shine C. Chung | One-time programmable memory devices using FinFET technology |
US10249379B2 (en) | 2010-08-20 | 2019-04-02 | Attopsemi Technology Co., Ltd | One-time programmable devices having program selector for electrical fuses with extended area |
US9824768B2 (en) | 2015-03-22 | 2017-11-21 | Attopsemi Technology Co., Ltd | Integrated OTP memory for providing MTP memory |
JP5616720B2 (ja) * | 2010-08-30 | 2014-10-29 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
US8896064B2 (en) | 2010-10-18 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge protection circuit |
US8923085B2 (en) | 2010-11-03 | 2014-12-30 | Shine C. Chung | Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access |
US9019791B2 (en) | 2010-11-03 | 2015-04-28 | Shine C. Chung | Low-pin-count non-volatile memory interface for 3D IC |
US8988965B2 (en) | 2010-11-03 | 2015-03-24 | Shine C. Chung | Low-pin-count non-volatile memory interface |
CN102544011A (zh) | 2010-12-08 | 2012-07-04 | 庄建祥 | 反熔丝存储器及电子*** |
US9685523B2 (en) * | 2014-12-17 | 2017-06-20 | Alpha And Omega Semiconductor Incorporated | Diode structures with controlled injection efficiency for fast switching |
US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
US8848423B2 (en) | 2011-02-14 | 2014-09-30 | Shine C. Chung | Circuit and system of using FinFET for building programmable resistive devices |
US10192615B2 (en) | 2011-02-14 | 2019-01-29 | Attopsemi Technology Co., Ltd | One-time programmable devices having a semiconductor fin structure with a divided active region |
JP5738653B2 (ja) * | 2011-03-31 | 2015-06-24 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
DE112012002136T5 (de) | 2011-05-18 | 2014-03-13 | Vishay-Siliconix | Halbleitervorrichtung |
US8829603B2 (en) | 2011-08-18 | 2014-09-09 | Alpha And Omega Semiconductor Incorporated | Shielded gate trench MOSFET package |
US9136261B2 (en) * | 2011-11-15 | 2015-09-15 | Shine C. Chung | Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection |
US9324849B2 (en) | 2011-11-15 | 2016-04-26 | Shine C. Chung | Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC |
US9412883B2 (en) | 2011-11-22 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for MOS capacitors in replacement gate process |
JP5798024B2 (ja) * | 2011-12-13 | 2015-10-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9007804B2 (en) | 2012-02-06 | 2015-04-14 | Shine C. Chung | Circuit and system of protective mechanisms for programmable resistive memories |
JP2013197122A (ja) * | 2012-03-15 | 2013-09-30 | Toshiba Corp | 半導体装置 |
TWM435722U (en) * | 2012-03-22 | 2012-08-11 | Excelliance Mos Corp | Power MOSFET |
DE102012102533B3 (de) * | 2012-03-23 | 2013-08-22 | Infineon Technologies Austria Ag | Integrierte Leistungstransistorschaltung mit Strommesszelle und Verfahren zu deren Herstellung sowie eine Anordnung diese enthaltend |
CN103426738B (zh) | 2012-05-17 | 2018-05-18 | 恩智浦美国有限公司 | 具有边缘端部结构的沟槽半导体器件及其制造方法 |
CN102789988A (zh) * | 2012-05-23 | 2012-11-21 | 上海宏力半导体制造有限公司 | 沟槽型功率器件的形成方法 |
US20150123165A1 (en) * | 2012-05-30 | 2015-05-07 | Kyushu Institute Of Technology | High-voltage insulated gate type power semiconductor device and method of manufacturing the same |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
US10411111B2 (en) | 2012-05-30 | 2019-09-10 | Kyushu Institute Of Technology | Method for fabricating high-voltage insulated gate type bipolar semiconductor device |
US9076526B2 (en) | 2012-09-10 | 2015-07-07 | Shine C. Chung | OTP memories functioning as an MTP memory |
US9722041B2 (en) * | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
US9183897B2 (en) | 2012-09-30 | 2015-11-10 | Shine C. Chung | Circuits and methods of a self-timed high speed SRAM |
US9324447B2 (en) | 2012-11-20 | 2016-04-26 | Shine C. Chung | Circuit and system for concurrently programming multiple bits of OTP memory devices |
JP5838176B2 (ja) | 2013-02-12 | 2016-01-06 | サンケン電気株式会社 | 半導体装置 |
US20140232451A1 (en) * | 2013-02-19 | 2014-08-21 | Qualcomm Incorporated | Three terminal semiconductor device with variable capacitance |
US10068834B2 (en) * | 2013-03-04 | 2018-09-04 | Cree, Inc. | Floating bond pad for power semiconductor devices |
US9929698B2 (en) * | 2013-03-15 | 2018-03-27 | Qualcomm Incorporated | Radio frequency integrated circuit (RFIC) charged-device model (CDM) protection |
TWI511293B (zh) * | 2013-06-24 | 2015-12-01 | Chip Integration Tech Co Ltd | 雙溝渠式mos電晶體結構及其製造方法 |
US9006063B2 (en) * | 2013-06-28 | 2015-04-14 | Stmicroelectronics S.R.L. | Trench MOSFET |
TWI566328B (zh) * | 2013-07-29 | 2017-01-11 | 高效電源轉換公司 | 具有用於產生附加構件之多晶矽層的氮化鎵電晶體 |
DE102013108518B4 (de) * | 2013-08-07 | 2016-11-24 | Infineon Technologies Ag | Halbleitervorrichtung und verfahren zum herstellen derselben |
CN104347422B (zh) * | 2013-08-09 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | 带静电释放保护电路的沟槽式mos晶体管的制造方法 |
US9941271B2 (en) * | 2013-10-04 | 2018-04-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Fin-shaped field effect transistor and capacitor structures |
KR102089514B1 (ko) * | 2013-12-23 | 2020-03-16 | 삼성전자 주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
US9324830B2 (en) | 2014-03-27 | 2016-04-26 | International Business Machines Corporation | Self-aligned contact process enabled by low temperature |
US9496149B2 (en) * | 2014-04-14 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods for manufacturing the same |
US9412473B2 (en) | 2014-06-16 | 2016-08-09 | Shine C. Chung | System and method of a novel redundancy scheme for OTP |
US9349795B2 (en) * | 2014-06-20 | 2016-05-24 | Infineon Technologies Austria Ag | Semiconductor switching device with different local threshold voltage |
US9231049B1 (en) | 2014-06-20 | 2016-01-05 | Infineon Technologies Austria Ag | Semiconductor switching device with different local cell geometry |
US9293533B2 (en) | 2014-06-20 | 2016-03-22 | Infineon Technologies Austria Ag | Semiconductor switching devices with different local transconductance |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
EP3183754A4 (en) | 2014-08-19 | 2018-05-02 | Vishay-Siliconix | Super-junction metal oxide semiconductor field effect transistor |
KR102026543B1 (ko) | 2014-08-19 | 2019-09-27 | 비쉐이-실리코닉스 | 전자 회로 |
US9425304B2 (en) | 2014-08-21 | 2016-08-23 | Vishay-Siliconix | Transistor structure with improved unclamped inductive switching immunity |
US9553184B2 (en) * | 2014-08-29 | 2017-01-24 | Nxp Usa, Inc. | Edge termination for trench gate FET |
US9397213B2 (en) | 2014-08-29 | 2016-07-19 | Freescale Semiconductor, Inc. | Trench gate FET with self-aligned source contact |
DE102014115464B4 (de) | 2014-10-23 | 2019-10-24 | Infineon Technologies Austria Ag | Leistungs-halbleitervorrichtung mit temperaturschutz |
JP6261494B2 (ja) * | 2014-12-03 | 2018-01-17 | 三菱電機株式会社 | 電力用半導体装置 |
US9680003B2 (en) | 2015-03-27 | 2017-06-13 | Nxp Usa, Inc. | Trench MOSFET shield poly contact |
JP6563689B2 (ja) * | 2015-05-27 | 2019-08-21 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子の製造方法 |
JP6560059B2 (ja) * | 2015-08-20 | 2019-08-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6561723B2 (ja) * | 2015-09-24 | 2019-08-21 | 豊田合成株式会社 | 半導体装置および電力変換装置 |
US9941266B2 (en) * | 2015-12-16 | 2018-04-10 | Rohm Co., Ltd. | Semiconductor device |
DE102016103384B4 (de) * | 2016-02-25 | 2024-02-08 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit nadelförmigen Feldplattenstrukturen in einem Transistorzellengebiet und in einem inneren Abschlussgebiet |
KR102541563B1 (ko) * | 2016-04-27 | 2023-06-08 | 삼성전자주식회사 | 반도체 장치, 반도체 칩 및 반도체 장치의 제조 방법 |
US10522674B2 (en) | 2016-05-18 | 2019-12-31 | Rohm Co., Ltd. | Semiconductor with unified transistor structure and voltage regulator diode |
US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
US10535413B2 (en) | 2017-04-14 | 2020-01-14 | Attopsemi Technology Co., Ltd | Low power read operation for programmable resistive memories |
US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
US10726914B2 (en) | 2017-04-14 | 2020-07-28 | Attopsemi Technology Co. Ltd | Programmable resistive memories with low power read operation and novel sensing scheme |
US10861950B2 (en) | 2017-11-16 | 2020-12-08 | Samsung Electronics Co., Ltd. | Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch |
US10910313B2 (en) | 2017-11-16 | 2021-02-02 | Samsung Electronics Co., Ltd. | Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch |
DE102018102685A1 (de) * | 2017-11-30 | 2019-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Kontaktbildungsverfahren und zugehörige Struktur |
US10770160B2 (en) | 2017-11-30 | 2020-09-08 | Attopsemi Technology Co., Ltd | Programmable resistive memory formed by bit slices from a standard cell library |
JP2019114643A (ja) * | 2017-12-22 | 2019-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6998788B2 (ja) * | 2018-02-09 | 2022-01-18 | エイブリック株式会社 | 半導体装置 |
GB2572442A (en) * | 2018-03-29 | 2019-10-02 | Cambridge Entpr Ltd | Power semiconductor device with a double gate structure |
TWI729538B (zh) | 2018-11-21 | 2021-06-01 | 大陸商上海瀚薪科技有限公司 | 一種整合箝制電壓箝位電路的碳化矽半導體元件 |
CN111370463A (zh) * | 2018-12-26 | 2020-07-03 | 深圳尚阳通科技有限公司 | 沟槽栅功率器件及其制造方法 |
DE102019008556A1 (de) | 2019-03-14 | 2020-09-17 | Semiconductor Components Industries, Llc | Feldeffekttransistorstruktur mit isoliertem Gate mit abgeschirmter Quelle und Verfahren |
US10784373B1 (en) | 2019-03-14 | 2020-09-22 | Semiconductor Components Industries, Llc | Insulated gated field effect transistor structure having shielded source and method |
US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
IT201900006709A1 (it) | 2019-05-10 | 2020-11-10 | St Microelectronics Srl | Dispositivo mosfet di potenza a super giunzione con affidabilita' migliorata, e metodo di fabbricazione |
US10930510B2 (en) | 2019-05-21 | 2021-02-23 | International Business Machines Corporation | Semiconductor device with improved contact resistance and via connectivity |
US10892188B2 (en) * | 2019-06-13 | 2021-01-12 | Semiconductor Components Industries, Llc | Self-aligned trench MOSFET contacts having widths less than minimum lithography limits |
JP7379882B2 (ja) | 2019-06-26 | 2023-11-15 | 富士電機株式会社 | 窒化物半導体装置 |
US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
CN110739303B (zh) * | 2019-10-30 | 2020-11-06 | 珠海迈巨微电子有限责任公司 | 集成ESD防护的Trench VDMOS器件及制造方法 |
CN110797263A (zh) * | 2019-11-14 | 2020-02-14 | 龙腾半导体有限公司 | 功率mosfet器件及其制造方法 |
US11552190B2 (en) | 2019-12-12 | 2023-01-10 | Analog Devices International Unlimited Company | High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region |
US10910478B1 (en) | 2020-03-04 | 2021-02-02 | Shuming Xu | Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency performance |
TWI804736B (zh) * | 2020-03-25 | 2023-06-11 | 立錡科技股份有限公司 | 具有橫向絕緣閘極雙極性電晶體之功率元件及其製造方法 |
CN112382613B (zh) * | 2020-11-12 | 2023-10-03 | 重庆万国半导体科技有限公司 | 一种沟槽功率器件与源极电容集成及其制造方法 |
CN112701163A (zh) * | 2021-02-05 | 2021-04-23 | 上海华虹宏力半导体制造有限公司 | 沟槽栅半导体器件及其制造方法 |
US11302776B1 (en) | 2021-05-31 | 2022-04-12 | Genesic Semiconductor Inc. | Method and manufacture of robust, high-performance devices |
EP4163981A1 (en) * | 2021-10-11 | 2023-04-12 | Nexperia B.V. | Semiconductor device with a clamping diode |
CN114725206B (zh) * | 2022-03-08 | 2023-07-25 | 西南交通大学 | 一种基于低介电常数介质的SiCVDMOSFET器件 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4238278A (en) * | 1979-06-14 | 1980-12-09 | International Business Machines Corporation | Polycrystalline silicon oxidation method for making shallow and deep isolation trenches |
JPS5961045A (ja) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | 半導体装置の製造方法 |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US4967245A (en) * | 1988-03-14 | 1990-10-30 | Siliconix Incorporated | Trench power MOSFET device |
US5283201A (en) * | 1988-05-17 | 1994-02-01 | Advanced Power Technology, Inc. | High density power device fabrication process |
US4876214A (en) * | 1988-06-02 | 1989-10-24 | Tektronix, Inc. | Method for fabricating an isolation region in a semiconductor substrate |
US4992390A (en) * | 1989-07-06 | 1991-02-12 | General Electric Company | Trench gate structure with thick bottom oxide |
US5168331A (en) * | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
US5527561A (en) * | 1991-05-28 | 1996-06-18 | Electrotech Limited | Method for filing substrate recesses using elevated temperature and pressure |
JP2837014B2 (ja) | 1992-02-17 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US5554862A (en) * | 1992-03-31 | 1996-09-10 | Kabushiki Kaisha Toshiba | Power semiconductor device |
JPH05335582A (ja) | 1992-05-27 | 1993-12-17 | Omron Corp | 縦型mosfet装置およびその製造方法 |
US5539238A (en) | 1992-09-02 | 1996-07-23 | Texas Instruments Incorporated | Area efficient high voltage Mosfets with vertical resurf drift regions |
US5430315A (en) | 1993-07-22 | 1995-07-04 | Rumennik; Vladimir | Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current |
US5514604A (en) * | 1993-12-08 | 1996-05-07 | General Electric Company | Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making |
JP3338178B2 (ja) * | 1994-05-30 | 2002-10-28 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5455190A (en) * | 1994-12-07 | 1995-10-03 | United Microelectronics Corporation | Method of making a vertical channel device using buried source techniques |
US5672889A (en) * | 1995-03-15 | 1997-09-30 | General Electric Company | Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making |
US5567634A (en) * | 1995-05-01 | 1996-10-22 | National Semiconductor Corporation | Method of fabricating self-aligned contact trench DMOS transistors |
US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
US5648670A (en) * | 1995-06-07 | 1997-07-15 | Sgs-Thomson Microelectronics, Inc. | Trench MOS-gated device with a minimum number of masks |
JP3272242B2 (ja) * | 1995-06-09 | 2002-04-08 | 三洋電機株式会社 | 半導体装置 |
JP3384198B2 (ja) * | 1995-07-21 | 2003-03-10 | 三菱電機株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
JPH09162399A (ja) | 1995-12-12 | 1997-06-20 | Toshiba Corp | 半導体装置 |
US6090700A (en) * | 1996-03-15 | 2000-07-18 | Vanguard International Semiconductor Corporation | Metallization method for forming interconnects in an integrated circuit |
US5770878A (en) * | 1996-04-10 | 1998-06-23 | Harris Corporation | Trench MOS gate device |
JP3528420B2 (ja) * | 1996-04-26 | 2004-05-17 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP4077529B2 (ja) * | 1996-05-22 | 2008-04-16 | フェアチャイルドコリア半導体株式会社 | トレンチ拡散mosトランジスタの製造方法 |
US6429481B1 (en) * | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
US6054365A (en) * | 1998-07-13 | 2000-04-25 | International Rectifier Corp. | Process for filling deep trenches with polysilicon and oxide |
US6080669A (en) * | 1999-01-05 | 2000-06-27 | Advanced Micro Devices, Inc. | Semiconductor interconnect interface processing by high pressure deposition |
US6316806B1 (en) * | 1999-03-31 | 2001-11-13 | Fairfield Semiconductor Corporation | Trench transistor with a self-aligned source |
US6188105B1 (en) * | 1999-04-01 | 2001-02-13 | Intersil Corporation | High density MOS-gated power device and process for forming same |
US6461918B1 (en) * | 1999-12-20 | 2002-10-08 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
-
1999
- 1999-04-22 US US09/296,959 patent/US6413822B2/en not_active Expired - Lifetime
-
2000
- 2000-04-21 KR KR1020017013334A patent/KR100679538B1/ko not_active IP Right Cessation
- 2000-04-21 AU AU48001/00A patent/AU4800100A/en not_active Abandoned
- 2000-04-21 JP JP2000614495A patent/JP4180800B2/ja not_active Expired - Fee Related
- 2000-04-21 WO PCT/US2000/010770 patent/WO2000065646A1/en active IP Right Grant
- 2000-04-21 CN CNB2007101618092A patent/CN100568470C/zh not_active Expired - Fee Related
- 2000-04-21 CN CNB2004100946560A patent/CN100367478C/zh not_active Expired - Fee Related
- 2000-04-21 TW TW089107593A patent/TW494529B/zh not_active IP Right Cessation
- 2000-04-21 EP EP00930123A patent/EP1186023A4/en not_active Withdrawn
- 2000-04-21 CN CNB008083932A patent/CN1192425C/zh not_active Expired - Fee Related
-
2002
- 2002-05-14 US US10/146,668 patent/US6750507B2/en not_active Expired - Lifetime
- 2002-05-14 US US10/146,568 patent/US6756274B2/en not_active Expired - Lifetime
-
2004
- 2004-01-28 US US10/767,028 patent/US6924198B2/en not_active Expired - Lifetime
- 2004-01-28 US US10/767,030 patent/US7052963B2/en not_active Expired - Lifetime
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US7666744B2 (en) | 2003-12-26 | 2010-02-23 | Nec Electronics Corporation | Method of manufacturing a semiconductor device having a trench surrounding plural unit cells |
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CN102034708B (zh) * | 2009-09-27 | 2012-07-04 | 无锡华润上华半导体有限公司 | 沟槽型dmos晶体管的制作方法 |
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CN106206741A (zh) * | 2016-08-30 | 2016-12-07 | 西安芯派电子科技有限公司 | 一种降低低压超结器件的栅极电阻的元胞结构及其制备方法 |
CN106206741B (zh) * | 2016-08-30 | 2023-07-04 | 西安芯派电子科技有限公司 | 一种降低低压超结器件的栅极电阻的元胞结构及其制备方法 |
CN108039372A (zh) * | 2017-12-21 | 2018-05-15 | 深圳迈辽技术转移中心有限公司 | 沟槽型垂直双扩散金属氧化物晶体管及其制作方法 |
CN108039372B (zh) * | 2017-12-21 | 2021-12-07 | 上海领矽半导体有限公司 | 沟槽型垂直双扩散金属氧化物晶体管及其制作方法 |
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JP4180800B2 (ja) | 2008-11-12 |
US20020195657A1 (en) | 2002-12-26 |
US20020168821A1 (en) | 2002-11-14 |
CN1192425C (zh) | 2005-03-09 |
AU4800100A (en) | 2000-11-10 |
US20040185622A1 (en) | 2004-09-23 |
US7052963B2 (en) | 2006-05-30 |
CN1655331A (zh) | 2005-08-17 |
US6756274B2 (en) | 2004-06-29 |
US6924198B2 (en) | 2005-08-02 |
JP2002543587A (ja) | 2002-12-17 |
US6750507B2 (en) | 2004-06-15 |
US20020019099A1 (en) | 2002-02-14 |
TW494529B (en) | 2002-07-11 |
WO2000065646A1 (en) | 2000-11-02 |
US6413822B2 (en) | 2002-07-02 |
EP1186023A1 (en) | 2002-03-13 |
CN100367478C (zh) | 2008-02-06 |
KR100679538B1 (ko) | 2007-02-07 |
EP1186023A4 (en) | 2007-02-21 |
US20040191994A1 (en) | 2004-09-30 |
KR20010112439A (ko) | 2001-12-20 |
CN100568470C (zh) | 2009-12-09 |
CN101179030A (zh) | 2008-05-14 |
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