CN106873270B - 薄膜晶体管基板 - Google Patents

薄膜晶体管基板 Download PDF

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CN106873270B
CN106873270B CN201611059596.8A CN201611059596A CN106873270B CN 106873270 B CN106873270 B CN 106873270B CN 201611059596 A CN201611059596 A CN 201611059596A CN 106873270 B CN106873270 B CN 106873270B
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electrode
transparent
width
side end
thin film
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CN106873270A (zh
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金度延
闵丙森
金宗贤
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LG Display Co Ltd
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LG Display Co Ltd
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract

公开了一种薄膜晶体管基板，该薄膜晶体管基板可以通过降低电场的非均匀性来防止余像和闪烁缺陷。在该薄膜晶体管基板中，像素电极包括透明边缘电极和透明内部电极，该透明边缘电极与该透明内部电极彼此以第一狭缝间隔开，该第一狭缝具有第一宽度并被设置在它们之间，并且公共电极在数据线的宽度方向上从透明边缘电极的另一侧端部被暴露出第二宽度，该第二宽度小于第一宽度。因此，各个子像素中的内部区域和边缘区域具有均匀的电场分布。

Description

薄膜晶体管基板
技术领域
本发明涉及包括薄膜晶体管的基板，且更具体地，涉及一种薄膜晶体管基板，该薄膜晶体管基板可以通过降低电场的非均匀性来防止余像(afterimage)和闪烁缺陷。
背景技术
液晶显示器(LCD)是一种显示设备，该显示设备通过向液晶层施加电场以及经由对电场的强度的调整来调整通过基板透射的光量而获得期望的图像信号，该液晶层被引入在薄膜晶体管(TFT)基板与滤色器基板之间，并具有各向异性的介电常数。
液晶显示器的示例包括使用水平电场的面内切换(IPS)液晶显示器和使用边缘场的边缘场切换(FFS)液晶显示器。
在这些当中，FFS液晶显示器通过将公共电极与像素电极之间的距离减小为小于薄膜晶体管基板与滤色器基板之间的距离来创建边缘场。通过该边缘场，不仅操作公共电极与像素电极之间的液晶分子，而且还操作像素电极和公共电极两者上的液晶分子，这使得提高了孔径比和透光率。
在FFS液晶显示器中，如图1所示，像素电极22和公共电极24彼此间隔开有狭缝(slit)，该狭缝被设置于其之间。此时，位于各个子像素中的像素电极22之间的距离与位于子像素之间的数据线20的相对侧上的相应子像素中的像素电极22之间的距离不同。因此，位于内部区域A1中的配向层(alignment layer)26的长度与位于边缘区域A2中的配向层26的长度不同，该内部区域A1在位于各个子像素中的像素电极22之间，该边缘区域A2在位于子像素之间的数据线20的相对侧上的相应子像素中的像素电极22之间。这样，内部区域A1与边缘区域A2之间的配向层26的电阻出现差异，并且相应地，配向层26的电阻的差异导致内部区域A1与边缘区域A2之间的残余DC分量不同，从而导致了各自区域的非均匀电场。
具体地，当液晶显示器被长时间驱动时，或者当向液晶层长时间施加单向(正或负)电场时，该电场基于公共电压而向上或向下偏离，并且液晶层中的掺杂剂被电离，从而变为被吸附在配向层26上。即，正离子被吸附在与负(-)电极对应的配向层26上，以及负离子被吸附在与正(+)电极对应的配向层26上。由于吸附在配向层26上的离子被扩散到液晶层中，因此产生了残余DC电压。即使未向液晶层施加DC电压，残余DC电压也会重新排列液晶层的液晶分子。因此，即使当向像素电极与公共电极之间的液晶层施加新的DC电压以便实现图像过渡时，也会出现余像缺陷，从而由残余DC电压形成的先前图像仍存在。具体地，如图2所例示，因为在边缘区域A2中产生了较高的残余DC电压(配向层26在边缘区域A2中的长度相对大于在内部区域A1中的长度)，所以内部区域A1和边缘区域A2的电场变得彼此不同，并且在边缘区域A2中余像缺陷明显。
另外，闪烁缺陷会造成约几秒钟的瞬间屏幕震动，出现闪烁缺陷直到残余DC电压耗尽为止。此时，如图3所例示，因为内部区域A1中的残余DC分量在时间T1之后几乎完全耗尽，所以在时间T1期间出现闪烁缺陷。另外，因为边缘区域A2中的残余DC分量在晚于内部区域A1的时间T1的时间T2之后耗尽，所以在时间T2期间出现闪烁缺陷，与在内部区域A1中相比，在边缘区域A2中配向层26的长度更长。
发明内容
因此，本发明涉及一种薄膜晶体管基板，该薄膜晶体管基板基本上消除了由于现有技术的限制和缺点而导致的一个或更多个问题。
本发明的目的是提供一种薄膜晶体管基板，该薄膜晶体管基板可以通过降低电场的非均匀性来防止余像和闪烁缺陷。
本发明的另外的优点、目的和特征将在以下的描述中被部分地阐述，并且对于本领域普通技术人员而言在审阅下文后将部分地变得显而易见或者可以从本发明的实践中习得。可以通过在所撰写的说明书及其权利要求书以及附图中具体指出的结构来实现并获得本发明的目的和其它优点。
为了实现这些目的和其它优点并且根据本发明的目的，如本文中所实施和广泛描述地，一种像素电极包括透明边缘电极和透明内部电极，该透明边缘电极与该透明内部电极彼此以第一狭缝间隔开，该第一狭缝具有第一宽度并被设置在该透明边缘电极与该透明内部电极之间，并且公共电极在数据线的宽度方向上从透明边缘电极的另一侧端部被暴露出第二宽度，该第二宽度小于第一宽度，由此，各个子像素中的内部区域和边缘区域具有均匀的电场分布。
另外，根据本发明的第一实施方式的薄膜晶体管基板还包括浮置导电层，该浮置导电层被设置在与所述像素电极相同的平面中，以与数据线交叠。
另外，在根据本发明的第二实施方式的薄膜晶体管基板中，公共电极包括位于与数据线交叠的区域中的第二狭缝，并且该公共电极的通过该第二狭缝暴露的另一侧端部与该透明边缘电极的另一侧端部间隔开第二宽度。
要理解的是，本发明的以上概括性描述和以下详细描述两者都是示例性和说明性的，并且旨在提供对所请求保护的本发明的进一步解释。
附图说明
附图被包括进来以提供对本发明的进一步理解，并且被并入本申请中且构成本申请的一部分，附图例示了本发明的实施方式，并且与本说明书一起用来解释本发明的原理。在附图中：
图1是例示传统的薄膜晶体管基板的截面图；
图2是例示取决于图1中所例示的像素电极之间的距离差异的残余DC量的视图；
图3是例示图1中所例示的薄膜晶体管基板中的残余DC分量的耗散的视图；
图4是例示根据本发明的第一实施方式的薄膜晶体管基板的截面图；
图5是例示基于每个位置的图4中所例示的像素电极与公共电极之间的边缘场的截面图；
图6是例示根据本发明的第二实施方式的薄膜晶体管基板的截面图；以及
图7是例示基于每个位置的图6中所例示的像素电极与公共电极之间的边缘场的截面图。
具体实施方式
以下，将参照附图来详细地描述本发明的实施方式。
图4是例示根据本发明的第一实施方式的薄膜晶体管基板的截面图。
图4中例示的薄膜晶体管基板包括：薄膜晶体管130、连接到薄膜晶体管130的像素电极122、用于与像素电极122协作在像素区域中创建边缘场的公共电极124、以及与数据线104交叠的浮置导电层132。
薄膜晶体管130被形成在选通线与数据线104的交叉处。薄膜晶体管130响应于选通线的扫描信号，用数据线104的视频信号对像素电极122进行充电。为此，薄膜晶体管130包括栅极106、源极108、漏极110、有源层114以及欧姆接触层116。
栅极106与有源层114的沟道交叠，且其之间设置有栅绝缘层112。栅极106可以是使用从钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)或它们的合金中选择的任一种在基板101上形成的单层或多层，但不限于此。选通信号通过选通线被提供给栅极106。
有源层114被形成在栅绝缘层112上以与栅极106交叠，从而在源极108与漏极110之间形成沟道。欧姆接触层116被形成在有源层114的除了沟道以外的区域上，以便在源极108和漏极110中的每一个与有源层114之间实现欧姆接触。有源层114和欧姆接触层116被形成为不仅与源极108和漏极110交叠，而且还与数据线104交叠。
源极108可以是使用从钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)或它们的合金中选择的任一种在欧姆接触层116上形成的单层或多层，但不限于此。视频信号通过数据线104被提供给源极108。
漏极110面向源极108并且由与源极108相同的材料形成，漏极110与源极108之间设置有沟道。漏极110通过像素接触孔120被暴露出，从而被电连接到像素电极122，该像素接触孔120穿透第一保护层118、平整层(planarization layer)128以及第二保护层138。
浮置导电层132被设置在公共电极124之上，以与数据线104交叠。更具体地，浮置导电层132使用与像素电极122相同的透明导电材料在与像素电极122相同的平面中被形成在第二保护层138上。因此，浮置导电层132和像素电极122可以经由相同的掩模工艺被同时形成，这可以防止附加的掩模工艺的实施和成本的增加。未向浮置导电层132施加来自外部源的电信号。
公共电极124被形成在各个子像素区域中，并且通过公共线接收公共电压。因此，提供有公共电压的公共电极124与像素电极122协作创建边缘场，视频信号通过薄膜晶体管130被提供给像素电极122。
像素电极122被连接到通过像素接触孔120暴露出的漏极110。各子像素的像素电极122包括位于靠近数据线104的透明边缘电极122b和位于透明边缘电极122b之间的透明内部电极122a。透明内部电极122a中的每一个与相邻的透明内部电极122a或相邻的透明边缘电极122b间隔开有第一狭缝122s，该第一狭缝122s具有第一宽度w1并被设置在它们之间。如图5所例示，第一边缘场FF1被产生在透明内部电极122a的一侧端部与公共电极124之间的第一内部区域IA1中，并且第二边缘场FF2被产生在透明内部电极122a的另一侧端部与公共电极124之间的第二内部区域IA2中，该第二边缘场FF2具有与第一内部区域IA1的电势相似的电势。这时，各个第一狭缝122s均具有第一宽度w1，以允许在第一内部区域IA1中产生的第一边缘场FF1的最外侧端点与在第二内部区域IA2中产生的第二边缘场FF2的最外侧端点彼此一致或交叠。
另外，因为透明边缘电极122b与浮置导电层132被第二宽度w2间隔开，该第二宽度w2小于第一宽度w1，所以公共电极124在数据线104的宽度方向上通过第二宽度w2从透明边缘电极122b的另一侧端部被暴露出。这里，第二宽度w2与第一宽度w1的比值在从0.1到0.5的范围内。因此，因为第一内部区域IA1和第二内部区域IA2中的每一个与边缘区域EA具有相似的表面积，所以边缘区域EA中的配向层136的长度与第一内部区域IA1和第二内部区域IA2中的每一个的长度相似。
从而，因为配向层136的电阻在第一内部区域IA1和第二内部区域IA2与边缘区域EA之间没有出现差异，所以在边缘区域EA中产生的第三边缘场FF3具有与第一内部区域IA1和第二内部区域IA2中的每一个的电势相似的电势。这样，第一内部区域IA1和第二内部区域IA2与边缘区域EA具有相似的残余DC分量，且因此，占用同样的时间量来耗尽残余DC分量。即，与现有技术相比，边缘区域EA中的残余DC分量被降低成与第一内部区域IA1和第二内部区域IA2中的每一个的残余DC分量相似，这确保了残余DC分量比在现有技术中更加迅速的耗尽。因此，本发明可以防止由电场的非均匀性引起的余像和闪烁缺陷。
图6是例示根据本发明的第二实施方式的薄膜晶体管基板的截面图。
除了用具有第二狭缝134的公共电极124来代替浮置导电层之外，图6中例示的薄膜晶体管基板包括与图4中例示的薄膜晶体管基板相同的组成元件。因此，将省略与相同的组成元件相关的详细描述。
公共电极124包括位于与数据线104交叠的区域中的第二狭缝134。由于第二狭缝134，各个子像素区域中的公共电极124比像素电极122更加朝向数据线104伸出。因为公共电极124在数据线104的宽度方向上从透明边缘电极122b的另一侧端部被暴露出第二宽度w2，所以通过第二狭缝134暴露出的公共电极124的另一侧端部与透明边缘电极122b的另一侧端部被第二宽度w2间隔开。因此，如图7所例示，第一边缘场FF1被产生在透明边缘电极122b的一侧端部或透明内部电极122a的该一侧端部与公共电极124之间的第一内部区域IA1中。第二边缘场FF2被产生在透明内部电极122a的另一侧端部与公共电极124之间的第二内部区域IA2中。并且，第三边缘场FF3被产生在透明边缘电极122b的另一侧端部与公共电极124之间的边缘区域EA中，该第三边缘场FF3具有与第一内部区域IA1和第二内部区域IA2中的每一个的电势相似的电势。
此时，第一狭缝122s的第一宽度w1与公共电极124的第二宽度w2的比值被设置成使得内部区域IA的残余DC分量与边缘区域EA的残余DC分量彼此相似。例如，伸出超过透明边缘电极122b的公共电极124的第二宽度w2小于第一狭缝122s的第一宽度w1，并且公共电极124的第二宽度w2与第一狭缝122s的第一宽度w1的比值在从0.1到0.74的范围内。只要满足该比值，内部区域IA1和IA2的残余DC量与边缘区域EA的残余DC量便彼此相似。即，当公共电极124的第二宽度w2与第一狭缝122s的第一宽度w1的比值在从0.1到0.74的范围内时，如表1所示，可以看出，内部区域IA1和IA2与边缘区域EA具有相似的残余DC分量，从而在内部区域IA1和IA2以及边缘区域EA中产生均匀分布的电场。另一方面，当该比值超过0.74时，如表1所示，可以看出，与内部区域IA1和IA2的残余DC分量相比，边缘区域EA的残余DC分量变得更大，从而在内部区域IA1和IA2以及边缘区域EA中导致电场的非均匀分布。
[表1]
Figure BDA0001161897790000061
如上所述，因为在本发明的第二实施方式中，第一内部区域IA1和第二内部区域IA2与边缘区域EA具有相似的电场分布，所以第一内部区域IA1和第二内部区域IA2与边缘区域EA具有相同的残余DC分量，且因此占用同样的时间量来耗尽残余DC分量。即，与现有技术相比，边缘区域EA的残余DC分量被降低成与第一内部区域IA1和第二内部区域IA2中的每一个的残余DC分量相似，这确保了残余DC分量比在现有技术中更加迅速的耗尽。因此，本发明可以防止由电场的非均匀性引起的余像和闪烁缺陷。
同时，虽然本发明通过示例的方式描述了像素电极122(即，透明上部电极)被设置在公共电极124(即，透明下部电极)之上的配置，但另选地，公共电极124(即，透明上部电极)可以被设置在像素电极122(即，透明下部电极)之上。另外，虽然本发明通过示例的方式描述了第一狭缝122s被布置成与数据线104平行的配置，但另选地，第一狭缝122s可以被布置成与选通线平行。在这种情况下，透明边缘电极122b位于靠近选通线。
如从以上描述显而易见，根据本发明，位于各个子像素中的第一内部区域和第二内部区域以及边缘区域具有相似的电场分布。因此，根据本发明，第一内部区域和第二内部区域与边缘区域具有相同的残余DC分量，并且占用同样的时间量来耗尽该残余DC分量，这可以防止由电场的非均匀性引起的余像和闪烁缺陷。
对于本领域技术人员而言显而易见的将是，上述本发明不限于上述实施方式和附图，并且在本发明的精神和范围内，各种替换、修改和变更可以被设计。
相关申请的交叉引用
本申请要求于2015年12月14日提交的韩国专利申请No.10-2015-0177884的权益，将其通过引用结合于此，如同在此充分阐述一般。

Claims (8)

1.一种薄膜晶体管基板，该薄膜晶体管基板包括：
数据线；
像素电极，所述像素电极具有透明边缘电极和透明内部电极，所述透明边缘电极被设置为靠近所述数据线，所述透明内部电极与所述透明边缘电极的一侧端部以第一狭缝间隔开，所述第一狭缝具有第一宽度并且介于所述透明边缘电极的所述一侧端部与所述透明内部电极之间；
公共电极；以及
浮置导电层，所述浮置导电层被设置在所述公共电极之上，以与所述数据线交叠，
其中，所述公共电极在所述数据线的宽度方向上在所述透明边缘电极与所述浮置导电层之间被暴露出第二宽度，并且
其中，所述第二宽度与所述第一宽度的比值在从0.1到0.74的范围内。
2.根据权利要求1所述的薄膜晶体管基板，其中，所述第二宽度与所述第一宽度的比值在从0.1到0.5的范围内。
3.根据权利要求2所述的薄膜晶体管基板，其中，所述浮置导电层由与所述像素电极相同的材料构成，并且被设置在与所述像素电极相同的平面中。
4.一种薄膜晶体管基板，该薄膜晶体管基板包括：
数据线；
像素电极，所述像素电极具有透明边缘电极和透明内部电极，所述透明边缘电极被设置为靠近所述数据线，所述透明内部电极与所述透明边缘电极的一侧端部以第一狭缝间隔开，所述第一狭缝具有第一宽度并且介于所述透明边缘电极的所述一侧端部与所述透明内部电极之间；以及
公共电极，所述公共电极在所述数据线的宽度方向上从所述透明边缘电极的剩余侧端部暴露出第二宽度，
其中，所述第二宽度与所述第一宽度的比值在从0.1到0.74的范围内，
其中，所述公共电极包括第二狭缝，所述第二狭缝位于与所述数据线交叠的区域中，并且
其中，所述公共电极的通过所述第二狭缝暴露的剩余侧端部与所述透明边缘电极的剩余侧端部间隔开所述第二宽度。
5.一种薄膜晶体管基板，该薄膜晶体管基板包括：
信号线；
透明上部电极，所述透明上部电极具有透明边缘电极和透明内部电极，所述透明边缘电极被设置为靠近所述信号线，所述透明内部电极与所述透明边缘电极的一侧端部以第一狭缝间隔开，所述第一狭缝具有第一宽度并且介于所述透明边缘电极的所述一侧端部与所述透明内部电极之间；以及
透明下部电极；以及
浮置导电层，所述浮置导电层被设置在所述透明下部电极之上，以与所述信号线交叠，
其中，所述透明下部电极在所述信号线的宽度方向上在所述透明边缘电极与所述浮置导电层之间被暴露出第二宽度，并且
其中，所述第二宽度与所述第一宽度的比值在从0.1到0.74的范围内。
6.根据权利要求5所述的薄膜晶体管基板，其中，所述第二宽度与所述第一宽度的比值在从0.1到0.5的范围内。
7.根据权利要求6所述的薄膜晶体管基板，其中，所述浮置导电层由与所述透明上部电极相同的材料形成，并且被设置在与所述透明上部电极相同的平面中。
8.一种薄膜晶体管基板，该薄膜晶体管基板包括：
信号线；
透明上部电极，所述透明上部电极具有透明边缘电极和透明内部电极，所述透明边缘电极被设置为靠近所述信号线，所述透明内部电极与所述透明边缘电极的一侧端部以第一狭缝间隔开，所述第一狭缝具有第一宽度并且介于所述透明边缘电极的所述一侧端部与所述透明内部电极之间；以及
透明下部电极，所述透明下部电极在所述信号线的宽度方向上从所述透明边缘电极的剩余侧端部暴露出第二宽度，
其中，所述第二宽度与所述第一宽度的比值在从0.1到0.74的范围内，
其中，所述透明下部电极包括第二狭缝，所述第二狭缝位于与所述信号线交叠的区域中，并且
其中，所述透明下部电极的通过所述第二狭缝暴露的剩余侧端部与所述透明边缘电极的剩余侧端部间隔开所述第二宽度。
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