CN104335472A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN104335472A
CN104335472A CN201280073601.4A CN201280073601A CN104335472A CN 104335472 A CN104335472 A CN 104335472A CN 201280073601 A CN201280073601 A CN 201280073601A CN 104335472 A CN104335472 A CN 104335472A
Authority
CN
China
Prior art keywords
chunk
semiconductor
electrically connected
electrode
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280073601.4A
Other languages
English (en)
Inventor
宫本昇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN104335472A publication Critical patent/CN104335472A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

网格状的分隔部(1)构成多个收容部(2)。半导体组块(4)、端子台组块(5)等多个电路组块在分别被收容于收容部(2)的状态下，彼此电连接而构成功率半导体电路。半导体组块(4)是利用绝缘体(8)将IGBT(7)覆盖而形成组块的。IGBT(7)的集电极经由金属板(11)与电极(12)连接。电极(12)从绝缘体(8)内部引出至绝缘体(8)的侧面。端子台组块(5)具有：电力端子(15)，其与对IGBT(7)供给电力的外部的电力配线进行电连接；以及螺钉孔(16)，其供用于固定电力配线的螺钉***。

Description

半导体装置
技术领域
本发明涉及一种能够容易地构成复杂的功率半导体电路的半导体装置。
背景技术
功率IGBT的通常的驱动电路，是将2in1构造等IGBT和FWD搭载于上桥臂侧和下桥臂侧的桥构造。但是，不使用稀土类磁体等的SR电动机的驱动电路等无法适用通常的半桥电路的驱动电路也在日益实用化(例如，参照专利文献1)。另外，提出了下述技术，即，将附设有电气电路的组块部件配置于设置为网格状的划分部件之间，从而构成半导体电路(例如，参照专利文献2)。
专利文献1：日本特开平11-191995号公报
专利文献2：日本特开2005-260018号公报
发明内容
在组合多个半导体模块而构成如专利文献1所述的不普通的复杂的功率半导体电路的情况下，半导体模块间的连接变得复杂。另外，在专利文献2的技术中，以内置干电池等低压的电源为前提，由于没有考虑与外部的高电压电源的连接，因此无法应用于功率半导体电路。
本发明就是为了解决上述课题而提出的，其目的是得到一种能够容易地构成复杂的功率半导体电路的半导体装置。
本发明所涉及的半导体装置的特征在于，具备：网格状的分隔部，其构成多个收容部；以及多个电路组块，它们在被收容于所述多个收容部的状态下，彼此电连接而构成功率半导体电路，所述多个电路组块至少包含半导体组块以及端子台组块，其中，所述半导体组块具有：半导体元件；绝缘体，其覆盖所述半导体元件；以及电极，其与所述半导体元件连接，并从所述绝缘体引出，所述端子台组块具有：电力端子，其与对所述半导体元件供给电力的外部的电力配线进行电连接；以及螺钉孔，其供用于固定所述电力配线的螺钉***。
发明的效果
根据本发明，能够容易地构成复杂的功率半导体电路。
附图说明
图1是表示本发明的实施方式所涉及的功率半导体电路的电路图。
图2是表示本发明的实施方式1所涉及的半导体装置的剖面图。
图3是沿着图2的I-II线的剖面图。
图4是表示对图3的装置进行组装的情况的剖面图。
图5是表示本发明的实施方式2所涉及的半导体装置的剖面图。
图6是表示本发明的实施方式3所涉及的半导体装置的剖面图。
图7是表示本发明的实施方式4所涉及的半导体装置的剖面图。
图8是表示对图7的装置进行组装的情况的剖面图。
具体实施方式
参照附图，对本发明的实施方式所涉及的半导体装置进行说明。有时对相同或者相对应的结构要素，标注相同的标号，省略重复的说明。
实施方式1.
图1是表示本发明的实施方式所涉及的功率半导体电路的电路图。该电路是SR电动机用的驱动电路。驱动电路中，晶体管Tr1～Tr6分别与二极管D1～D6串联连接，它们与高电压的电源连接。
图2是表示本发明的实施方式1所涉及的半导体装置的剖面图。该装置构成了图1的由虚线包围的电路。图3是沿图2的I-II线的剖面图。图4是表示对图3的装置进行组装的情况的剖面图。
网格状的分隔部1构成多个收容部2。冷却器3配置于分隔部1的下方。半导体组块4、端子台组块5以及母线条组块6等电路组块，在分别被收容于收容部2的状态下彼此电连接而构成功率半导体电路。电路组块的外形形成为与收容部2的网格尺寸一致的正方形。
半导体组块4是利用绝缘体8将IGBT 7(Insulated Gate BipolarTransistor)覆盖而形成组块的。IGBT 7经由绝缘片10以及金属板11而安装于冷却体9上。IGBT 7的集电极经由金属板11与电极12连接，IGBT 7的发射极与电极13连接。电极12、13从绝缘体8内部引出至绝缘体8的侧面。
端子台组块5构成为在绝缘组块14上设置有电力端子15。对IGBT 7供给电力的外部的电力配线与该电力端子15电连接。另外，在绝缘组块14设置有螺钉孔16，该螺钉孔16供用于固定电力配线的螺钉***。
母线条组块6利用绝缘体18将作为导体的母线条17覆盖而形成组块，使母线条17的两端引出至绝缘体18的侧面。这里虽然省略图示，但作为电路组块，也使用利用绝缘体将二极管覆盖而形成组块的结构、利用绝缘体将电容覆盖而形成组块的结构、利用绝缘体将电感元件覆盖而形成组块的结构。
壁面电极19分别设置于多个收容部2的壁面。在相邻的收容部2之间，壁面电极19经由贯穿分隔部1的贯穿电极20而彼此电连接。在半导体组块4被收容于收容部2的状态下，半导体组块4的电极12与壁面电极19接触而电连接。在端子台组块5被收容于收容部2的状态下，端子台组块5的电力端子15与壁面电极19接触而电连接。由此，端子台组块5的电力端子15与半导体组块4的IGBT 7的集电极进行电连接。
通过如上所述将各种电路组块组合并收容至收容部2而进行电连接，从而即使是复杂的电路，也能够容易地构成。另外，通过端子台组块5能够获得与外部的高电压电源的电连接，因此也能够适用于功率半导体电路。因此，利用本实施方式，能够容易地构成复杂的功率半导体电路。
此外，在半导体组块4的上表面设置连接器，利用通信线缆与控制IGBT 7的控制电路连接。由此，能够在任意状态下向多个半导体组块4连接所需要数量的控制电路。另外，也可以在半导体组块4设置受光部，利用光通信与控制电路连接。由此，能够容易地将低电压侧和高电压侧绝缘分离。
实施方式2.
图5是表示本发明的实施方式2所涉及的半导体装置的剖面图。冷却器3具有使水等冷却介质通过的冷却介质路径21。与半导体组块4的IGBT 7热连接的冷却体9(散热片)从绝缘体8的下表面凸出。在半导体组块4被收容于收容部2的状态下，半导体组块4的冷却体9与冷却介质路径21连接而构成冷却***。利用该结构，能够高效率地对半导体组块4的IGBT 7进行冷却。
实施方式3.
图6是表示本发明的实施方式3所涉及的半导体装置的剖面图。使半导体组块4的高度比其他电路组块的高度低，将控制IGBT 7的控制基板22配置于半导体组块4上。按压板23经由弹簧或橡胶等干涉材料24，将控制基板22按压至半导体组块4。按压板23通过螺钉25而固定于分隔部1。
在半导体组块4的绝缘体8的上表面，配置有与IGBT 7的栅极电连接的控制电极26。以与该控制电极26相对的方式，在控制基板22的反面设置有输出电极27。
受到按压板23按压的控制基板22的输出电极27，与控制基板22的控制电极26接触而电连接。另外，还能够确保半导体组块4和冷却器3的热连接。因此，能够一体地确保电连接和热连接，从而使组装变得容易。
实施方式4.
图7是表示本发明的实施方式4所涉及的半导体装置的剖面图。图8是表示对图7的装置进行组装的情况的剖面图。半导体组块28和半导体组块29通过母线条组块30而彼此电连接，构成功率半导体电路。
母线条组块30是利用绝缘体32将母线条31覆盖而形成组块的，2个引脚33、34与母线条31的两端分别电连接，从绝缘体32向下凸出。
半导体组块28是利用绝缘体35将IGBT 7覆盖而形成组块的。***电极36、37与IGBT 7的发射极以及集电极分别电连接，其中，该***电极36、37在绝缘体35的上表面具有***口。
半导体组块29是利用绝缘体39将二极管38覆盖而形成组块的。***电极40、41与二极管38的负极以及正极分别电连接，其中，该***电极40、41在绝缘体39的上表面具有***口。
母线条组块6的引脚33***至半导体组块28的***电极36而进行电连接，引脚34***至半导体组块29的***电极40而进行电连接。由此，半导体组块28的IGBT 7的发射极和半导体组块29的二极管38的负极电连接。
通过如上所述将各种半导体组块组合并利用母线条组块6使它们电连接，从而即使不存在如实施方式1所示的收容部，也能够容易地构成功率半导体电路。另外，通过将配线方向不同的母线条组块6组合，从而能够容易地变更连接位置。
标号的说明
1分隔部、2收容部、3冷却器、4半导体组块(电路组块)、5端子台组块(电路组块)、7IGBT(半导体元件)、8绝缘体、9冷却体、12电极、15电力端子、16螺钉孔、19壁面电极、21冷却介质路径、22控制基板、23按压板、26控制电极、27输出电极、28、29半导体组块、30母线条组块、31母线条、32绝缘体(第1绝缘体)、33、34引脚、35、39绝缘体(第2绝缘体)、36、37、40、41***电极、38二极管(半导体元件)

Claims (5)

1.一种半导体装置，其特征在于，具备：
网格状的分隔部，其构成多个收容部；以及
多个电路组块，它们在被收容于所述多个收容部的状态下，彼此电连接而构成功率半导体电路，
所述多个电路组块至少包含半导体组块以及端子台组块，其中，
所述半导体组块具有：半导体元件；绝缘体，其覆盖所述半导体元件；以及电极，其与所述半导体元件连接，并从所述绝缘体引出，
所述端子台组块具有：电力端子，其与对所述半导体元件供给电力的外部的电力配线进行电连接；以及螺钉孔，其供用于固定所述电力配线的螺钉***。
2.根据权利要求1所述的半导体装置，其特征在于，
还具备壁面电极，该壁面电极分别设置于所述多个收容部的壁面，在相邻的所述收容部之间彼此电连接，
在所述半导体组块被收容于所述收容部的状态下，所述半导体组块的所述电极与所述壁面电极接触而电连接，
在所述端子台组块被收容于所述收容部的状态下，所述端子台组块的所述电力端子与所述壁面电极接触而电连接。
3.根据权利要求1或2所述的半导体装置，其特征在于，
还具备冷却器，该冷却器配置于所述分隔部的下方，具有使冷却介质通过的冷却介质路径，
所述半导体组块还具有冷却体，该冷却体与所述半导体元件热连接，从所述绝缘体的下表面凸出，
在所述半导体组块被收容于所述收容部的状态下，所述半导体组块的所述冷却体与所述冷却介质路径连接而构成冷却***。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，还具备：
控制基板，其配置于所述半导体组块上，控制所述半导体元件；以及
按压板，其将所述控制基板按压至所述半导体组块，
所述半导体组块还具有控制电极，该控制电极配置于所述绝缘体的上表面，与所述半导体元件的控制端子电连接，
受到所述按压板按压的所述控制基板的输出电极，与所述控制基板的所述控制电极接触而电连接。
5.一种半导体装置，其特征在于，
具备多个母线条组块和多个半导体组块，其中，
所述多个母线条组块具有：母线条；第1绝缘体，其覆盖所述母线条；以及2个引脚，它们分别与所述母线条的两端电连接，从所述第1绝缘体向下凸出，
所述多个半导体组块通过所述多个母线条组块而彼此电连接，构成功率半导体电路，
各半导体组块具有：
半导体元件；
第2绝缘体，其覆盖所述半导体元件；以及
***电极，其在所述第2绝缘体的上表面具有***口，与所述半导体元件电连接，
所述母线条组块的所述引脚***至所述半导体组块的所述***电极而电连接。
CN201280073601.4A 2012-05-28 2012-05-28 半导体装置 Pending CN104335472A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/063655 WO2013179374A1 (ja) 2012-05-28 2012-05-28 半導体装置

Publications (1)

Publication Number Publication Date
CN104335472A true CN104335472A (zh) 2015-02-04

Family

ID=49672628

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280073601.4A Pending CN104335472A (zh) 2012-05-28 2012-05-28 半导体装置

Country Status (5)

Country Link
US (2) US9263356B2 (zh)
JP (1) JPWO2013179374A1 (zh)
CN (1) CN104335472A (zh)
DE (1) DE112012006429T5 (zh)
WO (1) WO2013179374A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6432378B2 (ja) * 2015-02-10 2018-12-05 株式会社Ihi 電力変換装置
JP6076439B1 (ja) * 2015-10-27 2017-02-08 三菱電機株式会社 車載電気機器
JP7208124B2 (ja) * 2019-09-20 2023-01-18 日立Astemo株式会社 電力変換装置およびモータ一体型電力変換装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141423B2 (zh) * 1971-12-17 1976-11-10
JPS57210699A (en) * 1981-06-19 1982-12-24 Denshi Burotsuku Kiki Seizou K Electronic device with block element for electronic circuit
JP3424532B2 (ja) * 1997-11-25 2003-07-07 株式会社日立製作所 電力変換装置
JPH11191995A (ja) 1997-12-25 1999-07-13 Nippon Electric Ind Co Ltd Ｓｒモータの駆動回路
JPH11238962A (ja) 1998-02-20 1999-08-31 Toshiba Corp 半導体装置の製造方法及び半導体装置
JP3877428B2 (ja) 1998-05-06 2007-02-07 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタモジュールおよび駆動回路付絶縁ゲート型バイポーラトランジスタモジュール
DE69937739T2 (de) * 1999-05-11 2008-11-27 Mitsubishi Denki K.K. Halbleitervorrichtung
JP3813098B2 (ja) * 2002-02-14 2006-08-23 三菱電機株式会社 電力用半導体モジュール
JP2005136278A (ja) * 2003-10-31 2005-05-26 Mitsubishi Electric Corp パワー半導体モジュール及びその製造方法
JP4113142B2 (ja) 2004-03-12 2008-07-09 電子ブロック機器製造株式会社 電子装置
JP2006303006A (ja) * 2005-04-18 2006-11-02 Yaskawa Electric Corp パワーモジュール
JP3119039U (ja) 2005-10-05 2006-02-16 興夫 荒井 ３次元ジグソーパズル式電子回路学習教材用装置
DE102007046969B3 (de) 2007-09-28 2009-04-02 Siemens Ag Elektronische Schaltung aus Teilschaltungen und Verfahren zu deren Herstellung und demgemäßer Umrichter oder Schalter
JP5479703B2 (ja) * 2008-10-07 2014-04-23 株式会社東芝 半導体装置及びその製造方法
DE102009028360B3 (de) * 2009-08-07 2010-12-09 Infineon Technologies Ag Verfahren zur Herstellung einer Schaltungsträgeranordnung und eines Leistungselektronikmoduls mit einer Verankerungsstruktur zur Herstellung einer temperaturwechselstabilen Lötverbindung
JP5629485B2 (ja) 2010-04-09 2014-11-19 トヨタ自動車株式会社 電力変換装置

Also Published As

Publication number Publication date
US9263356B2 (en) 2016-02-16
JPWO2013179374A1 (ja) 2016-01-14
WO2013179374A1 (ja) 2013-12-05
DE112012006429T5 (de) 2015-02-26
US20150076678A1 (en) 2015-03-19
US20160118329A1 (en) 2016-04-28

Similar Documents

Publication Publication Date Title
CN102142783B (zh) 电力转换装置
US9930782B2 (en) Switching board
KR102664547B1 (ko) 회로 레이아웃, 재분배 보드, 모듈 및 하프-브리지 회로를 제조하는 방법
CN104752368B (zh) 电子控制装置
KR101642754B1 (ko) 반도체장치
US10306814B2 (en) Heat dissipation in power electronic assemblies
CN102790043A (zh) 功率半导体
CN105643153B (zh) 晶体管引线的熔焊和钎焊
CN107112654B (zh) 模块-端子台连接结构及连接方法
US11464141B2 (en) Power converter device for a vehicle, and vehicle
CN104335472A (zh) 半导体装置
CN105900296A (zh) 用于导通一定数目个电气信号的导通电桥
CN115176380A (zh) 模块层及由其构建的电池***
KR102415020B1 (ko) 전력반도체 탑재 구조물
JP2002354839A (ja) 電力変換装置
CN101335138B (zh) 具有两个受控相位的开关设备
US10103096B2 (en) Semiconductor device
JP7014871B1 (ja) 電力変換装置
CN219371020U (zh) 功率模块和设备
CN216721272U (zh) 简易型光伏接线盒及光伏组件
CN110993874B (zh) 电池***和用于电池***的电池模块的电连接的方法
CN221127134U (zh) 半桥功率单元、全桥功率单元、电子设备及车辆
KR102021811B1 (ko) 전기 접속부들을 연결하기 위한 시스템
US11908773B2 (en) Element module
US20220399256A1 (en) Semiconductor device, printed circuit board (pcb), and method of interfacing control pin (gate pin) of a power semiconductor device (mosfet) to a printed circuit board (pcb) in a battery management system (bms)

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150204

WD01 Invention patent application deemed withdrawn after publication