CN103119715A - 反向导通功率半导体器件 - Google Patents
反向导通功率半导体器件 Download PDFInfo
- Publication number
- CN103119715A CN103119715A CN2011800472914A CN201180047291A CN103119715A CN 103119715 A CN103119715 A CN 103119715A CN 2011800472914 A CN2011800472914 A CN 2011800472914A CN 201180047291 A CN201180047291 A CN 201180047291A CN 103119715 A CN103119715 A CN 103119715A
- Authority
- CN
- China
- Prior art keywords
- layer
- igct
- diode
- master
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 19
- 230000000694 effects Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10181546.2 | 2010-09-29 | ||
EP10181546 | 2010-09-29 | ||
PCT/EP2011/066979 WO2012041958A2 (en) | 2010-09-29 | 2011-09-29 | Reverse-conducting power semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103119715A true CN103119715A (zh) | 2013-05-22 |
CN103119715B CN103119715B (zh) | 2016-08-03 |
Family
ID=43743553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180047291.4A Active CN103119715B (zh) | 2010-09-29 | 2011-09-29 | 反向导通功率半导体器件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8847277B2 (zh) |
EP (1) | EP2622639B1 (zh) |
JP (1) | JP5972881B2 (zh) |
KR (1) | KR101749671B1 (zh) |
CN (1) | CN103119715B (zh) |
WO (1) | WO2012041958A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104637997A (zh) * | 2015-01-28 | 2015-05-20 | 电子科技大学 | 一种双模逆导门极换流晶闸管及其制备方法 |
CN105226057A (zh) * | 2014-06-26 | 2016-01-06 | Abb技术有限公司 | 反向导通功率半导体器件 |
CN106129111A (zh) * | 2015-03-23 | 2016-11-16 | Abb技术有限公司 | 反向导通功率半导体器件 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015078657A1 (en) * | 2013-11-29 | 2015-06-04 | Abb Technology Ag | Reverse-conducting power semiconductor device |
EP2930753A1 (en) | 2014-04-09 | 2015-10-14 | ABB Technology AG | Turn-off power semiconductor device |
CN106537578B (zh) * | 2014-04-10 | 2019-02-15 | Abb 瑞士股份有限公司 | 具有栅环的改进定中心和固定的关断功率半导体装置及其制造方法 |
JP6602380B2 (ja) * | 2014-12-17 | 2019-11-06 | アーベーベー・シュバイツ・アーゲー | 双方向パワー半導体デバイス |
CN105590959B (zh) * | 2015-12-17 | 2018-05-29 | 清华大学 | 具有双p基区门阴极结构的门极换流晶闸管及其制备方法 |
CN115380388A (zh) | 2020-03-31 | 2022-11-22 | 日立能源瑞士股份公司 | 包括晶闸管和双极结型晶体管的功率半导体器件 |
US20230136897A1 (en) | 2020-03-31 | 2023-05-04 | Hitachi Energy Switzerland Ag | Turn-Off Power Semiconductor Device with Gate Runners |
WO2022043033A2 (en) | 2020-08-31 | 2022-03-03 | Hitachi Energy Switzerland Ag | Electronic device, package and semiconductor chip therefore |
EP4053915B1 (en) | 2021-03-02 | 2024-06-19 | Hitachi Energy Ltd | Gate-commuted thyristor cell with a base region having a varying thickness |
WO2023099298A1 (en) | 2021-12-03 | 2023-06-08 | Hitachi Energy Switzerland Ag | Semiconductor device and method for operating a semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040142573A1 (en) * | 2003-01-16 | 2004-07-22 | Jun Osanai | Method for manufacturing MOSFET semiconductor device |
US20070284672A1 (en) * | 2006-06-07 | 2007-12-13 | International Rectifier Corporation | Current limiting mosfet structure for solid state relays |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5342234B2 (zh) | 1973-02-12 | 1978-11-09 | ||
CH668505A5 (de) | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
DE4403429C2 (de) | 1994-02-04 | 1997-09-18 | Asea Brown Boveri | Abschaltbares Halbleiterbauelement |
US5594261A (en) | 1994-04-05 | 1997-01-14 | Harris Corporation | Device for isolating parallel sub-elements with reverse conducting diode regions |
EP2172976A3 (en) * | 1998-09-10 | 2010-05-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor Device |
JP4471575B2 (ja) | 2003-02-25 | 2010-06-02 | 三菱電機株式会社 | 圧接型半導体装置 |
-
2011
- 2011-09-29 JP JP2013530733A patent/JP5972881B2/ja active Active
- 2011-09-29 EP EP11763673.8A patent/EP2622639B1/en active Active
- 2011-09-29 KR KR1020137007778A patent/KR101749671B1/ko active IP Right Grant
- 2011-09-29 CN CN201180047291.4A patent/CN103119715B/zh active Active
- 2011-09-29 WO PCT/EP2011/066979 patent/WO2012041958A2/en active Application Filing
-
2013
- 2013-03-28 US US13/852,366 patent/US8847277B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040142573A1 (en) * | 2003-01-16 | 2004-07-22 | Jun Osanai | Method for manufacturing MOSFET semiconductor device |
US20070284672A1 (en) * | 2006-06-07 | 2007-12-13 | International Rectifier Corporation | Current limiting mosfet structure for solid state relays |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105226057A (zh) * | 2014-06-26 | 2016-01-06 | Abb技术有限公司 | 反向导通功率半导体器件 |
CN105226057B (zh) * | 2014-06-26 | 2018-10-19 | Abb瑞士股份有限公司 | 反向导通功率半导体器件 |
CN104637997A (zh) * | 2015-01-28 | 2015-05-20 | 电子科技大学 | 一种双模逆导门极换流晶闸管及其制备方法 |
CN106129111A (zh) * | 2015-03-23 | 2016-11-16 | Abb技术有限公司 | 反向导通功率半导体器件 |
CN106129111B (zh) * | 2015-03-23 | 2019-02-15 | Abb瑞士股份有限公司 | 反向导通功率半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
KR20130100144A (ko) | 2013-09-09 |
US8847277B2 (en) | 2014-09-30 |
WO2012041958A3 (en) | 2012-08-02 |
EP2622639B1 (en) | 2015-01-21 |
US20130207157A1 (en) | 2013-08-15 |
KR101749671B1 (ko) | 2017-06-21 |
WO2012041958A2 (en) | 2012-04-05 |
JP2013543260A (ja) | 2013-11-28 |
JP5972881B2 (ja) | 2016-08-17 |
EP2622639A2 (en) | 2013-08-07 |
CN103119715B (zh) | 2016-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103119715B (zh) | 反向导通功率半导体器件 | |
US9257543B2 (en) | Reverse-conducting insulated gate bipolar transistor and diode with one structure semiconductor device | |
JP6261494B2 (ja) | 電力用半導体装置 | |
US7557386B2 (en) | Reverse conducting IGBT with vertical carrier lifetime adjustment | |
US8564097B2 (en) | Reverse conducting IGBT | |
CN107863380B (zh) | 半导体器件 | |
CN101877352A (zh) | 反向导通半导体器件 | |
CN105789269A (zh) | 沟槽绝缘栅双极型晶体管及其制备方法 | |
JP6088586B2 (ja) | 逆導通パワー半導体デバイス | |
US8164154B1 (en) | Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof | |
KR20160113994A (ko) | 역 도통 전력 반도체 디바이스 | |
CN107258018A (zh) | 双向功率半导体器件 | |
US10516065B2 (en) | Semiconductor devices and methods for forming semiconductor devices | |
CN109728085B (zh) | 一种逆导型绝缘栅双极性晶体管 | |
WO2015078657A1 (en) | Reverse-conducting power semiconductor device | |
KR101378094B1 (ko) | 고속 회복 다이오드 | |
US20230046742A1 (en) | Reverse Conducting Power Semiconductor Device and Method for Manufacturing the Same | |
CN116960169A (zh) | 一种逆导型igbt器件结构及其制备方法 | |
JPH04261064A (ja) | 半導体装置 | |
JPH08330569A (ja) | 絶縁ゲート型サイリスタおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180503 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20210618 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231226 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |
|
TR01 | Transfer of patent right |