CN101877352A - 反向导通半导体器件 - Google Patents
反向导通半导体器件 Download PDFInfo
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- CN101877352A CN101877352A CN2010101751673A CN201010175167A CN101877352A CN 101877352 A CN101877352 A CN 101877352A CN 2010101751673 A CN2010101751673 A CN 2010101751673A CN 201010175167 A CN201010175167 A CN 201010175167A CN 101877352 A CN101877352 A CN 101877352A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 230000008859 change Effects 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 20
- 235000012431 wafers Nutrition 0.000 description 31
- 238000009413 insulation Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000011084 recovery Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09159009 | 2009-04-29 | ||
EP09159009.1 | 2009-04-29 | ||
EP10154064.9A EP2249392B1 (en) | 2009-04-29 | 2010-02-19 | Reverse-conducting semiconductor device |
EP10154064.9 | 2010-02-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101877352A true CN101877352A (zh) | 2010-11-03 |
CN101877352B CN101877352B (zh) | 2015-09-09 |
Family
ID=40972804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010175167.3A Active CN101877352B (zh) | 2009-04-29 | 2010-04-29 | 反向导通半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8212283B2 (zh) |
EP (1) | EP2249392B1 (zh) |
JP (1) | JP5697891B2 (zh) |
CN (1) | CN101877352B (zh) |
DK (1) | DK2249392T3 (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468837A (zh) * | 2010-11-10 | 2012-05-23 | 英飞凌科技股份有限公司 | Rc-igbt的导通状态检测 |
CN103367412A (zh) * | 2012-04-06 | 2013-10-23 | 英飞凌科技股份有限公司 | 反向导通绝缘栅双极型晶体管 |
CN103459682A (zh) * | 2011-03-28 | 2013-12-18 | Lg矽得荣株式会社 | 制造单晶锭的方法、单晶锭和由该单晶锭制造的晶片 |
WO2014086016A1 (zh) * | 2012-12-06 | 2014-06-12 | 中国科学院微电子研究所 | Rc-igbt及其制作方法 |
CN105448972A (zh) * | 2014-12-25 | 2016-03-30 | 深圳深爱半导体股份有限公司 | 新结构反向导通绝缘栅双极型晶体管 |
CN108417549A (zh) * | 2017-02-09 | 2018-08-17 | 株式会社东芝 | 半导体装置及电气设备 |
CN109728085A (zh) * | 2018-12-29 | 2019-05-07 | 中山汉臣电子科技有限公司 | 一种逆导型绝缘栅双极性晶体管 |
CN109830531A (zh) * | 2019-01-15 | 2019-05-31 | 上海华虹宏力半导体制造有限公司 | Rc-igbt器件及其制造方法 |
CN112201688A (zh) * | 2020-08-25 | 2021-01-08 | 株洲中车时代半导体有限公司 | 逆导型igbt芯片 |
CN112768447A (zh) * | 2021-01-11 | 2021-05-07 | 杭州士兰集昕微电子有限公司 | 逆导型绝缘栅双极型晶体管及其制造方法 |
CN114335157A (zh) * | 2021-12-17 | 2022-04-12 | 贵州振华风光半导体股份有限公司 | 一种纵向双极结型晶体管版图结构 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2339613B1 (en) | 2009-12-22 | 2015-08-19 | ABB Technology AG | Power semiconductor device and method for producing same |
JP6037495B2 (ja) * | 2011-10-17 | 2016-12-07 | ローム株式会社 | 半導体装置およびその製造方法 |
JP5742711B2 (ja) * | 2011-12-28 | 2015-07-01 | 株式会社デンソー | 半導体装置 |
JP6234696B2 (ja) * | 2013-04-16 | 2017-11-22 | ローム株式会社 | 半導体装置 |
GB2520617B (en) | 2013-10-22 | 2020-12-30 | Abb Schweiz Ag | RC-IGBT with freewheeling SiC diode |
JP6118471B2 (ja) * | 2013-12-23 | 2017-04-19 | アーベーベー・テクノロジー・アーゲー | 逆導通半導体素子 |
WO2015121015A1 (en) | 2014-02-14 | 2015-08-20 | Abb Technology Ag | Semiconductor module with two auxiliary emitter conductor paths |
US9159819B2 (en) | 2014-02-20 | 2015-10-13 | Infineon Technologies Ag | Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode |
CN104979379A (zh) * | 2014-04-03 | 2015-10-14 | 中国科学院微电子研究所 | 半导体器件的集电极结构及ti-igbt |
WO2016001182A2 (en) | 2014-06-30 | 2016-01-07 | Abb Technology Ag | Semiconductor device |
CN107004578B (zh) | 2014-09-15 | 2020-01-24 | Abb瑞士股份有限公司 | 用于制造包括薄半导体晶圆的半导体器件的方法 |
EP3238260B1 (en) | 2014-12-23 | 2020-03-25 | ABB Power Grids Switzerland AG | Reverse-conducting semiconductor device |
CN107924843B (zh) | 2015-06-09 | 2021-01-26 | Abb电网瑞士股份公司 | 制造碳化硅功率半导体器件的边缘终端的方法和碳化硅功率半导体器件 |
EP3154091A1 (en) | 2015-10-07 | 2017-04-12 | ABB Technology AG | Reverse-conducting semiconductor device |
EP3176812A1 (en) | 2015-12-02 | 2017-06-07 | ABB Schweiz AG | Semiconductor device and method for manufacturing such a semiconductor device |
JP6454447B2 (ja) | 2015-12-02 | 2019-01-16 | アーベーベー・シュバイツ・アーゲー | 半導体装置の製造方法 |
JP6817777B2 (ja) * | 2015-12-16 | 2021-01-20 | ローム株式会社 | 半導体装置 |
EP3223316A1 (en) | 2016-03-24 | 2017-09-27 | ABB Technology AG | Wide bandgap power semiconductor device and method for manufacturing such a device |
DE102016110035B4 (de) * | 2016-05-31 | 2020-09-10 | Infineon Technologies Ag | Elektrische Baugruppe, die eine bipolare Schaltvorrichtung und einen selbstleitenden Transistor mit breiter Bandlücke umfasst, und eine elektrische Baugruppe, die eine bipolare Schaltvorrichtung und einen selbstleitenden Junction-Feldeffekttransistor umfasst, der einen Halbleiterbereich aus Siliziumcarbid umfasst |
EP3255676A1 (en) | 2016-06-09 | 2017-12-13 | ABB Schweiz AG | Vertical power semiconductor device and method for operating such a device |
JP6854598B2 (ja) | 2016-07-06 | 2021-04-07 | ローム株式会社 | 半導体装置 |
EP3306672A1 (en) | 2016-10-07 | 2018-04-11 | ABB Schweiz AG | Semiconductor device |
JP7078619B2 (ja) | 2016-11-14 | 2022-05-31 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 並列逆導通igbtおよびワイドバンドギャップスイッチのスイッチング |
JP6854654B2 (ja) * | 2017-01-26 | 2021-04-07 | ローム株式会社 | 半導体装置 |
US10439038B2 (en) | 2017-02-09 | 2019-10-08 | Kabushiki Kaisha Toshiba | Semiconductor device and electrical apparatus |
US10446539B2 (en) * | 2017-02-24 | 2019-10-15 | Nxp B.V. | Electrostatic discharge (ESD) protection device and method for operating an ESD protection device |
DE112018008221T5 (de) * | 2018-12-19 | 2021-09-02 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
GB2584698B (en) | 2019-06-12 | 2022-09-14 | Mqsemi Ag | Non-punch-through reverse-conducting power semiconductor device and method for producing same |
JP7404702B2 (ja) | 2019-08-09 | 2023-12-26 | 富士電機株式会社 | 半導体装置 |
JP2023101242A (ja) * | 2022-01-07 | 2023-07-20 | 株式会社東芝 | 半導体装置 |
Citations (4)
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CN1577884A (zh) * | 2003-07-24 | 2005-02-09 | 三菱电机株式会社 | 绝缘栅型双极晶体管及其制造方法以及变流电路 |
US7112868B2 (en) * | 2002-10-30 | 2006-09-26 | Infineon Technologies Ag | IGBT with monolithic integrated antiparallel diode |
DE102005019178A1 (de) * | 2005-04-25 | 2006-11-02 | Infineon Technologies Ag | Halbleiterbauelement, insbesondere rückwärts leitender IGBT |
US20080135871A1 (en) * | 2006-10-25 | 2008-06-12 | Infineon Technologies Austria Ag | Semiconductor component |
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JPH0828506B2 (ja) | 1988-11-07 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
ATE167245T1 (de) | 1994-12-02 | 1998-06-15 | Walter Steiner | Wäschetrockner |
JP4415767B2 (ja) * | 2004-06-14 | 2010-02-17 | サンケン電気株式会社 | 絶縁ゲート型半導体素子、及びその製造方法 |
JP5157201B2 (ja) * | 2006-03-22 | 2013-03-06 | 株式会社デンソー | 半導体装置 |
EP2086012A1 (en) | 2007-12-19 | 2009-08-05 | ABB Technology AG | Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor |
EP2073271A1 (en) | 2007-12-19 | 2009-06-24 | ABB Technology AG | Reverse-conducting insulated gate bipolar transistor and method for manufacturing such a reverse-conducting insulated gate bipolar transistor |
EP2184781A1 (en) * | 2008-11-05 | 2010-05-12 | ABB Technology AG | Reverse-conducting semiconductor device |
-
2010
- 2010-02-19 EP EP10154064.9A patent/EP2249392B1/en active Active
- 2010-02-19 DK DK10154064.9T patent/DK2249392T3/da active
- 2010-04-29 US US12/770,451 patent/US8212283B2/en active Active
- 2010-04-29 CN CN201010175167.3A patent/CN101877352B/zh active Active
- 2010-04-30 JP JP2010104715A patent/JP5697891B2/ja active Active
Patent Citations (4)
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US7112868B2 (en) * | 2002-10-30 | 2006-09-26 | Infineon Technologies Ag | IGBT with monolithic integrated antiparallel diode |
CN1577884A (zh) * | 2003-07-24 | 2005-02-09 | 三菱电机株式会社 | 绝缘栅型双极晶体管及其制造方法以及变流电路 |
DE102005019178A1 (de) * | 2005-04-25 | 2006-11-02 | Infineon Technologies Ag | Halbleiterbauelement, insbesondere rückwärts leitender IGBT |
US20080135871A1 (en) * | 2006-10-25 | 2008-06-12 | Infineon Technologies Austria Ag | Semiconductor component |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468837B (zh) * | 2010-11-10 | 2015-10-28 | 英飞凌科技股份有限公司 | Rc-igbt的导通状态检测 |
CN102468837A (zh) * | 2010-11-10 | 2012-05-23 | 英飞凌科技股份有限公司 | Rc-igbt的导通状态检测 |
CN103459682A (zh) * | 2011-03-28 | 2013-12-18 | Lg矽得荣株式会社 | 制造单晶锭的方法、单晶锭和由该单晶锭制造的晶片 |
CN103367412B (zh) * | 2012-04-06 | 2016-08-24 | 英飞凌科技股份有限公司 | 反向导通绝缘栅双极型晶体管 |
CN103367412A (zh) * | 2012-04-06 | 2013-10-23 | 英飞凌科技股份有限公司 | 反向导通绝缘栅双极型晶体管 |
WO2014086016A1 (zh) * | 2012-12-06 | 2014-06-12 | 中国科学院微电子研究所 | Rc-igbt及其制作方法 |
CN105448972B (zh) * | 2014-12-25 | 2019-04-19 | 深圳深爱半导体股份有限公司 | 反向导通绝缘栅双极型晶体管 |
CN105448972A (zh) * | 2014-12-25 | 2016-03-30 | 深圳深爱半导体股份有限公司 | 新结构反向导通绝缘栅双极型晶体管 |
CN108417549A (zh) * | 2017-02-09 | 2018-08-17 | 株式会社东芝 | 半导体装置及电气设备 |
CN108417549B (zh) * | 2017-02-09 | 2021-09-24 | 株式会社东芝 | 半导体装置及电气设备 |
CN109728085A (zh) * | 2018-12-29 | 2019-05-07 | 中山汉臣电子科技有限公司 | 一种逆导型绝缘栅双极性晶体管 |
CN109728085B (zh) * | 2018-12-29 | 2021-10-22 | 安建科技(深圳)有限公司 | 一种逆导型绝缘栅双极性晶体管 |
CN109830531A (zh) * | 2019-01-15 | 2019-05-31 | 上海华虹宏力半导体制造有限公司 | Rc-igbt器件及其制造方法 |
CN112201688A (zh) * | 2020-08-25 | 2021-01-08 | 株洲中车时代半导体有限公司 | 逆导型igbt芯片 |
CN112201688B (zh) * | 2020-08-25 | 2023-04-07 | 株洲中车时代半导体有限公司 | 逆导型igbt芯片 |
CN112768447A (zh) * | 2021-01-11 | 2021-05-07 | 杭州士兰集昕微电子有限公司 | 逆导型绝缘栅双极型晶体管及其制造方法 |
CN114335157A (zh) * | 2021-12-17 | 2022-04-12 | 贵州振华风光半导体股份有限公司 | 一种纵向双极结型晶体管版图结构 |
CN114335157B (zh) * | 2021-12-17 | 2024-01-19 | 贵州振华风光半导体股份有限公司 | 一种纵向双极结型晶体管版图结构 |
Also Published As
Publication number | Publication date |
---|---|
US8212283B2 (en) | 2012-07-03 |
EP2249392A3 (en) | 2011-08-03 |
US20100276727A1 (en) | 2010-11-04 |
JP5697891B2 (ja) | 2015-04-08 |
CN101877352B (zh) | 2015-09-09 |
JP2010263215A (ja) | 2010-11-18 |
EP2249392A2 (en) | 2010-11-10 |
DK2249392T3 (da) | 2020-08-17 |
EP2249392B1 (en) | 2020-05-20 |
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