CN105226057B - 反向导通功率半导体器件 - Google Patents
反向导通功率半导体器件 Download PDFInfo
- Publication number
- CN105226057B CN105226057B CN201510360418.8A CN201510360418A CN105226057B CN 105226057 B CN105226057 B CN 105226057B CN 201510360418 A CN201510360418 A CN 201510360418A CN 105226057 B CN105226057 B CN 105226057B
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- China
- Prior art keywords
- diode
- layer
- thyristor
- gct
- anode layer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 235000012431 wafers Nutrition 0.000 description 20
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- 239000002019 doping agent Substances 0.000 description 6
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- 230000000903 blocking effect Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14174099.3 | 2014-06-26 | ||
EP14174099.3A EP2960941B1 (en) | 2014-06-26 | 2014-06-26 | Reverse-conducting power semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105226057A CN105226057A (zh) | 2016-01-06 |
CN105226057B true CN105226057B (zh) | 2018-10-19 |
Family
ID=50981016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510360418.8A Active CN105226057B (zh) | 2014-06-26 | 2015-06-26 | 反向导通功率半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9385223B2 (zh) |
EP (1) | EP2960941B1 (zh) |
JP (1) | JP6088586B2 (zh) |
KR (1) | KR101851828B1 (zh) |
CN (1) | CN105226057B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3073530B1 (en) * | 2015-03-23 | 2017-05-03 | ABB Schweiz AG | Reverse conducting power semiconductor device |
CN107863384A (zh) * | 2017-10-20 | 2018-03-30 | 西安理工大学 | 注入增强缓冲层结构和含该结构的SiC光触发晶闸管 |
CN109411548A (zh) * | 2018-10-30 | 2019-03-01 | 深圳市金鑫城纸品有限公司 | 功率二极管及其制备方法 |
CN109686783B (zh) * | 2018-12-27 | 2024-06-07 | 清华大学 | 一种具有反向通流功能的器件 |
CN115039233A (zh) | 2020-02-03 | 2022-09-09 | 日立能源瑞士股份公司 | 反向导通功率半导体器件及其制造方法 |
EP4107783B1 (en) * | 2020-03-31 | 2023-12-20 | Hitachi Energy Ltd | Turn-off power semiconductor device with radial gate runners |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0200863A1 (de) * | 1985-03-20 | 1986-12-17 | BBC Brown Boveri AG | Halbleiterbauelement mit Thyristor- und Diodenstrukturen |
CN101853878A (zh) * | 2010-06-03 | 2010-10-06 | 西安理工大学 | 一种pnp-沟槽复合隔离RC-GCT器件及制备方法 |
CN102969245A (zh) * | 2012-12-07 | 2013-03-13 | 株洲南车时代电气股份有限公司 | 一种逆导型集成门极换流晶闸管制作方法 |
CN103119715A (zh) * | 2010-09-29 | 2013-05-22 | Abb技术有限公司 | 反向导通功率半导体器件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61232671A (ja) * | 1985-04-08 | 1986-10-16 | Fuji Electric Co Ltd | 逆導通gtoサイリスタ |
JPH07111325A (ja) * | 1993-10-14 | 1995-04-25 | Toshiba Corp | 逆導通ゲートターンオフサイリスタ |
JPH0786567A (ja) * | 1993-09-14 | 1995-03-31 | Toshiba Corp | 半導体装置 |
JPH07130984A (ja) * | 1993-11-04 | 1995-05-19 | Toyota Autom Loom Works Ltd | Mosゲート半導体装置 |
JPH07176720A (ja) * | 1993-12-17 | 1995-07-14 | Toyo Electric Mfg Co Ltd | 電界緩和分離構造を有する逆導通型サイリスタ |
JPH07273354A (ja) * | 1994-03-31 | 1995-10-20 | Shindengen Electric Mfg Co Ltd | ダイオ−ド |
JP3968912B2 (ja) * | 1999-05-10 | 2007-08-29 | 富士電機デバイステクノロジー株式会社 | ダイオード |
JP2005191388A (ja) * | 2003-12-26 | 2005-07-14 | Mitsumi Electric Co Ltd | ラテラルpnpトランジスタ |
-
2014
- 2014-06-26 EP EP14174099.3A patent/EP2960941B1/en active Active
-
2015
- 2015-06-24 KR KR1020150089622A patent/KR101851828B1/ko active IP Right Grant
- 2015-06-24 US US14/748,774 patent/US9385223B2/en active Active
- 2015-06-25 JP JP2015127590A patent/JP6088586B2/ja active Active
- 2015-06-26 CN CN201510360418.8A patent/CN105226057B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0200863A1 (de) * | 1985-03-20 | 1986-12-17 | BBC Brown Boveri AG | Halbleiterbauelement mit Thyristor- und Diodenstrukturen |
CN101853878A (zh) * | 2010-06-03 | 2010-10-06 | 西安理工大学 | 一种pnp-沟槽复合隔离RC-GCT器件及制备方法 |
CN103119715A (zh) * | 2010-09-29 | 2013-05-22 | Abb技术有限公司 | 反向导通功率半导体器件 |
CN102969245A (zh) * | 2012-12-07 | 2013-03-13 | 株洲南车时代电气股份有限公司 | 一种逆导型集成门极换流晶闸管制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105226057A (zh) | 2016-01-06 |
KR101851828B1 (ko) | 2018-04-24 |
EP2960941A1 (en) | 2015-12-30 |
US20160013302A1 (en) | 2016-01-14 |
KR20160001667A (ko) | 2016-01-06 |
JP6088586B2 (ja) | 2017-03-01 |
JP2016009871A (ja) | 2016-01-18 |
EP2960941B1 (en) | 2017-01-04 |
US9385223B2 (en) | 2016-07-05 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20180528 Address after: Baden, Switzerland Applicant after: ABB Switzerland Co.,Ltd. Address before: Zurich Applicant before: ABB TECHNOLOGY Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210623 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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TR01 | Transfer of patent right |
Effective date of registration: 20240124 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Country or region after: Switzerland Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG Country or region before: Switzerland |