CN102842572A - Small double-row bridge rectifier - Google Patents
Small double-row bridge rectifier Download PDFInfo
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- CN102842572A CN102842572A CN201110173913XA CN201110173913A CN102842572A CN 102842572 A CN102842572 A CN 102842572A CN 201110173913X A CN201110173913X A CN 201110173913XA CN 201110173913 A CN201110173913 A CN 201110173913A CN 102842572 A CN102842572 A CN 102842572A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention discloses a small double-row bridge rectifier which comprises a packaging body, four rectifier diodes and four pins, wherein the four rectifier diodes are formed by two bicrystal PN junction chips arranged inside the packaging body in parallel; the bottom surface of the first bicrystal PN junction chip forms a P type region, and the two ends of the top surface of the first bicrystal PN junction chip forms N type regions; the bottom surface of the second bicrystal PN junction chip forms a N type region, and the two ends of the top surface of the second bicrystal PN junction chip forms P type regions; the first pin and the second pin are respectively and fixedly connected with the bottom surfaces of the first and second bicrystal PN junction chips so as to form positive and negative poles for direct current output; the third pin is connected with one N type region on the top surface of the first bicrystal PN junction chip and one P type region on the top surface of the second bicrystal PN junction; the fourth pin is connected with the other N type region on the top surface of the first bicrystal PN junction chip and the other P type region on the top surface of the second bicrystal PN junction chip; and an alternating current output terminal is formed by the third pin and the fourth pin. Only two varieties of bicrystal PN junction chips are needed, the locating places of the bicrystal PN junction chips are not required, and thus the entire packaging efficiency is improved.
Description
Technical field
The present invention relates to rectistack, relate in particular to a kind of small outline dual formula bridge heap of AC-DC.
Background technology
The bridge architecture that bridge rectifier is made up of four rectifier diodes; It utilizes the unilateal conduction characteristic of diode that alternating current is carried out rectification; Because bridge rectifier must utilize efficient to double than halfwave rectifier to input sine wave; Be a kind of remarkable improvement, convert in the galvanic circuit so be widely used in alternating current to the diode halfwave rectifier.
Along with electronic product develops to miniaturization, what require that the profile of semi-conductor electronic device does is again little and thin.Present minimize bridge heap mainly is divided into two types, and one type is direct insertion bridge heap, and another kind is SMD bridge heap.
For SMD bridge heap; More typical structure has following several kinds at present: 1, the disclosed a kind of miniature semiconductor rectifier bridge of Chinese invention patent publication number CN1197989; It comprises two diode crystal grain that have the N type altogether and the two diode crystal grain that have the P type altogether; Wherein altogether a p type island region of N type crystal grain together a corresponding N type fauna of P type crystal grain be connected to a terminal electrode of first group of lead frame, altogether another p type island region of N type crystal grain then together another N type district of P type crystal grain be connected to the another terminal electrode of first group of lead frame, and altogether N type crystal grain N type district together the p type island region of P type crystal grain then be connected to the two-terminal electrode of second group of lead frame respectively; Thereby constitute a bridge rectifier; Although this miniature rectifier structurally helps microminiaturization, make the double diode chip that upward needs to adopt two kinds, promptly have N type double diode chip altogether and have P type double diode chip altogether; Cause following problem easily: 1) acp chip is wide in variety, and complex process shape increases; 2) the chip qualification rate is relatively low; 3) owing to there are two chip kinds, uniformity is relatively poor; 4) chip of P type substrate relatively difficulty do.2, the disclosed plate mini-type bridge heap of Chinese utility model patent Granted publication CN2545706Y; It forms bridge rectifier by four rectifier diodes in a packaging body, four rectifier diodes are made up of identical PN junction chip; Spatially two and be listed in of four PN junction chips; Two and be listed in down in addition, the p type island region of each PN junction chip and N type district arrange that up and down wherein the p type island region of diagonal position PN junction chip is identical with orientation, N type district; Adopt a connecting piece to connect between two PN junction chips repeatedly putting up and down respectively; And be listed in and be listed under two PN junction chips adopt another brace to be connected respectively, two braces on the intermediate layer are as one group of electrode terminal, two braces on the upper and lower are organized electrode terminal as another; And in packaging body, draw respectively, constitute miniature five layers of rectifier bridge pile structure with this.Because this patent adopts five-layer structure; Its thickness of product is generally about 2.5～2.7mm; The inner many accommodation spaces of electronic product have not only been taken; And, proposed higher requirement for simultaneously each layer parts installing and locating because the processing step that is arranged so that the production and processing of bridge heap of sandwich construction increases.
Summary of the invention
Technical problem to be solved by this invention is to pile existing problem and a kind of easy to assembly, good heat dissipation effect, small outline dual formula bridge heap that volume is little are provided to above-mentioned rectifier bridge.
Technical problem to be solved by this invention can realize through following technical scheme:
A kind of small outline dual formula bridge heap; Comprise a packaging body and four diode rectification diodes and four pins of being arranged in the packaging body, it is characterized in that said four rectifier diodes are made up of two PN junction chips; Article two, twin crystal PN junction chip is arranged in parallel within the said packaging body; Wherein the bottom surface of article one twin crystal PN junction chip is a p type island region, and the end face two ends of article one twin crystal PN junction chip are N type district, and the centre in two N type districts cuts off but do not break off in the middle of the whole first twin crystal PN junction chip; The bottom surface of second twin crystal PN junction chip is N type district, and the end face two ends of second twin crystal PN junction chip are p type island region, and the centre of two p type island regions cuts off but do not break off in the middle of the whole second twin crystal PN junction chip; First and second pin in said four pins is fixedly connected with the bottom surface of said first and second twin crystal PN junction chip respectively; Constitute direct current output both positive and negative polarity; N type district on the 3rd pin and the first twin crystal PN junction chip end face is fixedly connected with a p type island region on the second twin crystal PN junction chip end face; Another N type district on the 4th pin and the first twin crystal PN junction chip end face is fixedly connected with another p type island region on the second twin crystal PN junction chip end face, and third and fourth pin constitutes ac input end.
In the present invention, the passivation layer on the said twin crystal PN junction chip can adopt glass or silicon dioxide passivation layer, also can adopt the silicon rubber passivation layer.
In a preferred embodiment of the invention, said four pins part of extending said packaging body is in the same plane.
Core of the present invention is: adopt two twin crystal PN junction chips repeatedly to put into miniature three layers bridge pile structure in the space with four pins.
Owing to adopted technical scheme as above, the present invention compared with prior art has advantage:
1, the present invention adopts two twin crystal PN junction chips and four pins to connect into three layers of bridge heap of small outline dual formula; Its aspect ratio is original to reduce by 30%; Having overcome conventional art prejudice in the past---said in the CN1197989A application for a patent for invention: bridge rectifier manufacturing approach that only should routine must connect four silicon diodes with motor row encapsulation again, and it is tiny that its volume can't be shortened into, can't meet the demand of electronic product; And its processing procedure is complicated, yields is difficult to be promoted ".
2, the kind of twin crystal PN junction chip of the present invention only needs two kinds, and putting position is had no requirement, and has improved whole encapsulation work efficiency.
3, twin crystal PN junction chip qualification rate of the present invention is very high, once quality qualification rate >=99.9% after the encapsulation.
On weld mold, put when 4, the present invention assembles and take less space, make that the bridge heap quantity of same weld mold welding is more, improved production efficiency, reduced cost.
5, the present invention can realize automated production because two twin crystal PN junction chips and four pins adopt the layering tiling, has reduced the thickness of bridge heap simultaneously, has saved sizing material, makes that the volume of bridge heap is littler, and weight is lighter.
6, the present invention directly is welded on twin crystal PN junction chip on the pin, need not wire jumper, good heat dissipation effect simultaneously.
7, pin can adopt tower structure, has saved the waste of material, and the waste rate that makes copper material drops to 5% by original 25%.
Description of drawings
Fig. 1 is the internal structure sketch map of small outline dual formula bridge heap of the present invention.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect and be easy to understand and understand, below in conjunction with concrete accompanying drawing and embodiment, further set forth the present invention.
Referring to Fig. 1; Small outline dual formula bridge heap shown in the figure; Comprise a packaging body 100 and four rectifier diodes and four pins 310,320,330,340; Four rectifier diodes are made up of two twin crystal PN junction chips 210,220, and two twin crystal PN junction chips 210,220 are arranged in the packaging body 100 with being arranged in parallel.
The bottom surface of twin crystal PN junction chip 210 is a p type island region 211, and the two ends of end face are the middle partition in 212,213, two N type districts 212,213, N type district but do not break off in the middle of the whole twin crystal PN junction chip 210.The bottom surface of twin crystal PN junction chip 220 is N type district 221, and the two ends of end face are the middle partition of 222,223, two p type island regions 212,213 of p type island region but do not break off in the middle of the whole twin crystal PN junction chip 220.
Pin 310,320 can adopt tower structure, can save material like this, and pin 310,320 is fixedly connected with the p type island region 211 of the bottom surface of PN junction chip 210 and the N type district 221 of the bottom surface of PN junction chip 220 respectively, constitutes direct current output both positive and negative polarity.
Pin 330,340 can adopt tower structure, can save material like this.N type district 212 on pin 330 and twin crystal PN junction chip 210 end faces is fixedly connected with a p type island region 222 on twin crystal PN junction chip 220 end faces; N type district 213 on pin 340 and twin crystal PN junction chip 210 end faces is fixedly connected with the p type island region 223 on PN junction chip 220 end faces, and pin 330,340 constitutes ac input ends.
In the present invention, the passivation layer on the twin crystal PN junction chip 210,220 can adopt glass or silicon dioxide passivation layer, also can adopt the silicon rubber passivation layer.The part that four pins 310,320,330,340 extend packaging body 100 is in the same plane.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; The present invention is not restricted to the described embodiments; That describes in the foregoing description and the specification just explains principle of the present invention; Under the prerequisite that does not break away from spirit and scope of the invention, the present invention also has various changes and modifications, and these variations and improvement all fall in the scope of the invention that requires protection.The present invention requires protection range to be defined by appending claims and equivalent thereof.
Claims (2)
1. a small outline dual formula bridge is piled; Comprise a packaging body and four diode rectification diodes and four pins of being arranged in the packaging body; It is characterized in that; Said four rectifier diodes are made up of two twin crystal PN junction chips, and two twin crystal PN junction chips are arranged in parallel within the said packaging body, and wherein the bottom surface of article one twin crystal PN junction chip is a p type island region; Article one, the end face two ends of twin crystal PN junction chip are N type district, and the centre in two N type districts cuts off but do not break off in the middle of the whole first twin crystal PN junction chip; The bottom surface of second twin crystal PN junction chip is N type district, and the end face two ends of second twin crystal PN junction chip are p type island region, and the centre of two p type island regions cuts off but do not break off in the middle of the whole second twin crystal PN junction chip; First and second pin in said four pins is fixedly connected with the bottom surface of said first and second twin crystal PN junction chip respectively; Constitute direct current output both positive and negative polarity; N type district on the 3rd pin and the first twin crystal PN junction chip end face is fixedly connected with a p type island region on the second twin crystal PN junction chip end face; Another N type district on the 4th pin and the first twin crystal PN junction chip end face is fixedly connected with another p type island region on the second twin crystal PN junction chip end face, and third and fourth pin constitutes ac input end.
2. small outline dual formula bridge heap as claimed in claim 1 is characterized in that the part that said four pins extend said packaging body is in the same plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110173913XA CN102842572A (en) | 2011-06-24 | 2011-06-24 | Small double-row bridge rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110173913XA CN102842572A (en) | 2011-06-24 | 2011-06-24 | Small double-row bridge rectifier |
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| Publication Number | Publication Date |
|---|---|
| CN102842572A true CN102842572A (en) | 2012-12-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110173913XA Pending CN102842572A (en) | 2011-06-24 | 2011-06-24 | Small double-row bridge rectifier |
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| CN (1) | CN102842572A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124236A (en) * | 2013-04-24 | 2014-10-29 | 敦南科技股份有限公司 | Bridge rectifier and manufacturing method thereof |
| CN109727938A (en) * | 2017-10-31 | 2019-05-07 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
| WO2019085442A1 (en) * | 2017-10-31 | 2019-05-09 | 苏州固锝电子股份有限公司 | High-strength rectifier bridge device |
| CN111180437A (en) * | 2019-12-13 | 2020-05-19 | 上海晶丰明源半导体股份有限公司 | Chip packaging structure adopting multi-base-island lead frame |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1197989A (en) * | 1997-04-25 | 1998-11-04 | 强茂股份有限公司 | Miniature semiconductor rectifier bridge and its making method |
| US5859468A (en) * | 1997-04-03 | 1999-01-12 | Pan Jit International Inc. | Micro semiconductor bridge rectifier and method of manufacturing the same |
| CN2545706Y (en) * | 2002-03-29 | 2003-04-16 | 苏州固锝电子有限公司 | Sheet type miniature bridge stack |
| CN1599054A (en) * | 2003-09-17 | 2005-03-23 | 台湾半导体股份有限公司 | No-lead ultrathin semiconductor bridge rectifier and its manufacturing method |
| CN202103044U (en) * | 2011-06-24 | 2012-01-04 | 上海金克半导体设备有限公司 | Small double-row bridge rectifier |
-
2011
- 2011-06-24 CN CN201110173913XA patent/CN102842572A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5859468A (en) * | 1997-04-03 | 1999-01-12 | Pan Jit International Inc. | Micro semiconductor bridge rectifier and method of manufacturing the same |
| CN1197989A (en) * | 1997-04-25 | 1998-11-04 | 强茂股份有限公司 | Miniature semiconductor rectifier bridge and its making method |
| CN2545706Y (en) * | 2002-03-29 | 2003-04-16 | 苏州固锝电子有限公司 | Sheet type miniature bridge stack |
| CN1599054A (en) * | 2003-09-17 | 2005-03-23 | 台湾半导体股份有限公司 | No-lead ultrathin semiconductor bridge rectifier and its manufacturing method |
| CN202103044U (en) * | 2011-06-24 | 2012-01-04 | 上海金克半导体设备有限公司 | Small double-row bridge rectifier |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124236A (en) * | 2013-04-24 | 2014-10-29 | 敦南科技股份有限公司 | Bridge rectifier and manufacturing method thereof |
| CN104124236B (en) * | 2013-04-24 | 2017-05-17 | 敦南科技股份有限公司 | Bridge rectifier and manufacturing method thereof |
| CN109727938A (en) * | 2017-10-31 | 2019-05-07 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
| WO2019085442A1 (en) * | 2017-10-31 | 2019-05-09 | 苏州固锝电子股份有限公司 | High-strength rectifier bridge device |
| CN111180437A (en) * | 2019-12-13 | 2020-05-19 | 上海晶丰明源半导体股份有限公司 | Chip packaging structure adopting multi-base-island lead frame |
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Application publication date: 20121226 |